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Patent # Description
2017/0365373 INSULATED WIRE AND CABLE
An insulated wire includes a conductor, a flame-retardant inner layer that is provided around the conductor and includes a metal hydroxide, and a water ingress...
2017/0365372 CONDUCTIVE POLYMER MATERIAL AND MOLDED ARTICLE USING SAME
By using CNF excellent in dispersibility, conductivity, and crystallinity, a conductive polymer material having high conductivity even with a low CNF content...
2017/0365371 EUV MULTILAYER MIRROR, OPTICAL SYSTEM INCLUDING A MULTILAYER MIRROR AND METHOD OF MANUFACTURING A MULTILAYER MIRROR
A multilayer mirror (M) reflecting extreme ultraviolet (EUV) radiation from a first wavelength range in an EUV spectral region includes a substrate (SUB) and a...
2017/0365370 IRRADIATION TARGET FOR RADIOISOTOPE PRODUCTION, METHOD FOR PREPARING AND USE OF THE IRRADIATION TARGET
The invention provides a sintered rare earth metal oxide target for producing a radioisotope in an instrumentation tube of a nuclear power reactor, wherein the...
2017/0365369 METHOD FOR PROCESSING LIQUID RADIOACTIVE WASTE AND FOR THE RECOVERY THEREOF
The invention relates to a technique for handling liquid radioactive waste from a nuclear fuel-energy cycle, and may be used in a process for processing liquid...
2017/0365368 METHOD OF PROVIDING SELECTIVE COMMUNICATION BETWEEN TWO ENCLOSURES
A method is described for providing selective communication between two enclosures. The first enclosure includes a first flange and a first door. The second...
2017/0365367 STORAGE CONTAINER FOR SPENT NUCLEAR FUEL
The present invention provides a dry interim storage container for spent nuclear fuel, precisely a dry interim storage container that can be filled with spent...
2017/0365366 REMOTE CONTROL PROTECTOR FOR ANTI-LIGHT INTERFERENCE
A remote control protector for anti-light interference includes a body and a shelter. The body includes a housing space, a first surface, and a second surface....
2017/0365365 Additively Manufactured Concrete-Bearing Radiation Attenuation Structure
A radiation-shielding attenuation structure and method of forming the attenuation structure, wherein the attenuation structure is made by additively...
2017/0365364 METHOD OF MANUFACTURING A SiC COMPOSITE FUEL CLADDING WITH INNER Zr ALLOY LINER
A method for making a fuel rod cladding tube and a cladding tube are described. The method includes wrapping ceramic fibers, for example, SiC fibers in a SiC...
2017/0365363 RUPTURE CONTROL DEVICE AND SEMICONDUCTOR DEVICE TO IMPROVE YIELD
A rupture control device may include an address control circuit configured to generate a rupture address in response to a first rupture command signal, a...
2017/0365362 DELAYED EQUIVALENCE IDENTIFICATION
A method includes configuring an integrated circuit comprising one or more registers to provide a free running clock in the integrated circuit, simulating N...
2017/0365361 SEMICONDUCTOR MEMORY DEVICES, MEMORY SYSTEMS INCLUDING THE SAME AND METHOD OF CORRECTING ERRORS IN THE SAME
A semiconductor memory device includes a memory cell array in which a plurality of memory cells are arranged. The semiconductor memory device includes an error...
2017/0365360 PLATE DEFECT MITIGATION TECHNIQUES
Methods, systems, techniques, and devices for operating a ferroelectric memory cell or cells are described. Groups of cells may be operated in different ways...
2017/0365359 METHODS FOR OPERATING A DATA STORAGE DEVICE AND DATA STORAGE DEVICE UTILIZING THE SAME
A data storage device includes a flash memory and a controller. The controller is coupled to the flash memory and includes a ROM which stores a boot code. In...
2017/0365358 METHODS OF OPERATING A MEMORY DEVICE
Methods of operating a memory device include comparing an input address to one or more addresses stored in the memory device and indicative of problematic...
2017/0365357 MAGNETIC MEMORY DEVICE AND CONTROLLING METHOD THEREOF
A magnetic memory device includes a memory cell array comprising memory cells including magnetic tunnel junction elements. Each memory cell is electrically...
2017/0365356 SHARED ERROR DETECTION AND CORRECTION MEMORY
Apparatuses and methods of sharing error correction memory on an interface chip are described. An example apparatus includes: at least one memory chip having a...
2017/0365355 MEMORY CONTROLLER FOR SELECTING READ CLOCK SIGNAL
A memory controller includes a clock delay generator, a set of flip-flops, and a control circuit, and is connected to a processor and a memory. The clock delay...
2017/0365354 SYSTEM INCLUDING HIERARCHICAL MEMORY MODULES HAVING DIFFERENT TYPES OF INTEGRATED CIRCUIT MEMORY DEVICES
Volatile memory devices may be on a first memory module that is coupled to a memory controller by a first signal path. A nonvolatile memory device may be on a...
2017/0365353 APPARATUSES AND/OR METHODS FOR OPERATING A MEMORY CELL AS AN ANTI-FUSE
Embodiments disclosed herein relate to operating a memory cell as an anti-fuse, such as for use in phase change memory, for example.
2017/0365352 MANAGING REFRESH FOR FLASH MEMORY
Systems and method for a host-driven data refresh of a Flash memory include registers provided in the Flash memory for storing various settings related to...
2017/0365351 SEMICONDUCTOR DEVICE
A voltage generating circuit 100 of the present invention includes a control logic 110, a voltage generating element 120 and a connecting element 130. The...
2017/0365350 MEMORY SYSTEM
According to one embodiment, a memory system includes a nonvolatile semiconductor memory device, a voltage generation unit and a control unit. The nonvolatile...
2017/0365349 Dynamic Tuning Of First Read Countermeasures
Techniques are provided for improving the accuracy of read operations of memory cells, where the threshold voltage (Vth) of a memory cell can shift depending...
2017/0365348 SEMICONDUCTOR MEMORY DEVICE
A semiconductor memory device includes a memory cell, a bit line connected to the memory cell, and a sense amplifier connected to the memory cell through the...
2017/0365347 SEMICONDUCTOR DEVICE
A semiconductor device includes a first circuit configured to generate a first voltage based on a first current, a second circuit that includes a first...
2017/0365346 HIGH VOLTAGE ARCHITECTURE FOR NON-VOLATILE MEMORY
A method of erasing, during an erase operation, a non-volatile memory (NVM) cell of a memory device is disclosed. The erasing includes applying a first HV...
2017/0365345 FAST PROGRAMMING MEMORY DEVICE
In an embodiment of a memory device including a matrix of memory cells wherein the memory cells are arranged in a plurality of memory cells strings each one...
2017/0365344 METHODS OF OPERATING A MEMORY DURING A PROGRAMMING OPERATION
Methods of operating a memory include increasing a voltage applied to a first access line from a first voltage to a second voltage higher than the first...
2017/0365343 BOOSTING CHANNELS OF MEMORY CELLS
A method for programming a non-volatile memory device includes concurrently boosting channels of memory cells in a selected memory string and an unselected...
2017/0365342 MEMORY AS A PROGRAMMABLE LOGIC DEVICE
Methods for operating a memory, and memory configured to perform similar methods, include programming a first series string of memory cells of a first group of...
2017/0365341 ALGORITHMIC N SEARCH/M WRITE TERNARY CONTENT ADDRESSABLE MEMORY (TCAM)
The present disclosure relates to a content addressable memory (CAM), and more particularly, to an algorithmic ternary content addressable memory (TCAM) that...
2017/0365340 Semiconductor Memory Having Both Volatile and Non-Volatile Functionality and Method of Operating
Semiconductor memory having both volatile and non-volatile modes and methods of operation. A semiconductor storage device includes a plurality of memory cells...
2017/0365339 Memory Programming Methods and Memory Systems
Memory programming methods and memory systems are described. One example memory programming method includes first applying a first signal to a memory cell to...
2017/0365338 DATA-WRITE DEVICE FOR RESISTANCE-CHANGE MEMORY ELEMENT
A data-write device includes a write driver that causes a current to flow through a current path including an MTJ element or the other current path including...
2017/0365337 MEMORY DEVICE WITH REDUCED NEIGHBOR MEMORY CELL DISTURBANCE
In one embodiment, an apparatus, such as a memory device, is disclosed. The apparatus includes a memory cell, digit line driver, access line driver, clamping...
2017/0365336 DATA SENSING APPARATUS
A data sensing apparatus adapted for sensing read-out data of a memory apparatus includes a sensing reference voltage generator, a sensing reference current...
2017/0365335 SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM
A semiconductor memory device includes a first memory cell array including a first memory cell that is capable of holding two or more bits of data including at...
2017/0365334 DATA WRITING METHOD, MEMORY CONTROL CIRCUIT UNIT AND MEMORY STORAGE APPARATUS
A data writing method for a rewritable non-volatile memory module is provided. The method includes grouping physical erasing units of a rewritable non-volatile...
2017/0365333 MEMORY WITH OUTPUT CONTROL
An apparatus, system, and method for controlling data transfer to an output port of a serial data link interface in a semiconductor memory is disclosed. In one...
2017/0365332 RING OSCILLATOR BUILT FROM SRAM CELLS INTERCONNECTED VIA STANDARD CELL-INTERFACE
An Integrated Circuit (IC) includes a memory, circuit interconnections and control logic. The memory includes multiple standard-library Static Random Access...
2017/0365331 Boost Circuit for Memory
Various implementations described herein are directed to a device having a memory cell coupled to complementary bitlines. The memory cell may store at least...
2017/0365330 SEMICONDUCTOR DEVICE
A semiconductor device includes a substrate, a circuit having a transistor formed on the substrate, an oscillation circuit generating a frequency signal, a...
2017/0365329 APPARATUS, METHOD AND SYSTEM FOR PERFORMING SUCCESSIVE WRITES TO A BANK OF A DYNAMIC RANDOM ACCESS MEMORY
Techniques and mechanisms to provide write access to a memory device. In an embodiment, a memory controller sends commands to a memory device which comprises...
2017/0365328 MEMORY CONTROL CIRCUIT UNIT, MEMORY STORAGE DEVICE AND SIGNAL RECEIVING METHOD
A memory control circuit unit, a memory storage device and a signal receiving method. In one exemplary embodiment, a memory interface circuit of the memory...
2017/0365327 Memory Devices Including Buffer Memory and Memory Modules Including the Same
Memory devices may include a memory cell connected to a word line and a bit line, a first bit line sense amplifier connected to the memory cell through the bit...
2017/0365326 MEMORY DEVICE WITH IMPROVED LATENCY AND OPERATING METHOD THEREOF
Disclosed is a memory device which includes a first memory cell connected to a word line and a first bit line, a second memory cell connected to the word line...
2017/0365325 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND DRIVING METHOD FOR WORD LINE THEREOF
A non-volatile semiconductor memory device and a driving method for word lines thereof are provided. A flash memory of the invention includes a memory cell...
2017/0365324 ROW HAMMER MONITORING BASED ON STORED ROW HAMMER THRESHOLD VALUE
Detection logic of a memory subsystem obtains a threshold for a memory device that indicates a number of accesses within a time window that causes risk of data...
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