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Patent # Description
2018/0047891 ULTRASONIC DEVICE, METHOD FOR MANUFACTURING THE SAME, ELECTRONIC DEVICE AND ULTRASONIC IMAGING DEVICE
An ultrasonic device includes a substrate having a first opening, a second opening and a wall part partitioning the first opening and the second opening; a...
2018/0047890 ELEMENT MANUFACTURING METHOD
An element manufacturing method includes a first step of obtaining a thickness distribution in a planar direction of a workpiece, a second step of calculating...
2018/0047889 ELECTROACTIVE ACTUATOR, MECHANICAL DEVICE INCLUDING THE SAME, AND POLYMER ELECTROLYTE
An electroactive actuator includes a polymer electrolyte and an electrode configured to apply an electric field to the polymer electrolyte, the polymer...
2018/0047888 THERMOELECTRIC CONVERTER
A thermoelectric converter includes a battery box, an outer box and a connecting ring. The battery box has a bottom case, a battery disposed in the bottom...
2018/0047887 Multi-stage thermoelectric generator monolithically integrated on a light absorber
A solar-powered thermoelectric generator is provided that includes a solar collector, a light absorbing and heat generating element having an elongated shape,...
2018/0047886 Synthesis of N-Type Thermoelectric Materials, Including Mg-Sn-Ge Materials, and Methods for Fabrication Thereof
Discussed herein are systems and methods for fabrication of MgSnGe-based thermoelectric materials for applications from room temperature and near room...
2018/0047885 MULTI-MATERIAL LED HEAT SINKS
A number of variations may include a product that may include a first heat sink that may include a first face opposite a second face, a plurality of fins...
2018/0047884 LIGHT EMITTING DEVICE PACKAGE, BACKLIGHT UNIT, ILLUMINATION APPARATUS, AND METHOD OF MANUFACTURING LIGHT...
Disclosed herein are a light emitting device package, a backlight unit, an illumination apparatus, and a method of manufacturing a light emitting device...
2018/0047883 LIGHT EMITTING ELEMENT WITH LIGHT TRANSMISSIVE SUBSTRATE HAVING RECESS IN CROSS-SECTIONAL PLANE
A light-emitting element includes a light transmissive substrate, a semiconductor layered body, and first and second light reflecting members. The...
2018/0047882 LIGHT EMITTING ELEMENT, LIGHT EMITTING ELEMENT ARRAY, AND LIGHT TRANSMISSION DEVICE
A light emitting element includes: a semiconductor stack structure that includes a light emitting part, and a light receiving part that receives light...
2018/0047881 PACKAGE STRUCTURE FOR ULTRAVIOLET LIGHT-EMITTING DIODE
The present embodiment discloses a package structure for ultraviolet LED, which comprises a substrate, an ultraviolet light-emitting diode (LED), and an...
2018/0047880 METHOD OF FABRICATING LIGHT EMITTING DEVICE PACKAGE
A method of fabricating a light emitting device package includes forming a plurality of semiconductor light emitting parts, each having a first conductive...
2018/0047879 METHOD FOR PRODUCING A MULTIPLICITY OF CONVERSION ELEMENTS, CONVERSION ELEMENT, AND OPTOELECTRONIC DEVICE
The invention relates to a method for producing a plurality of conversion elements (6) comprising the following steps: providing a substrate (1); applying a...
2018/0047878 Cadmium-free Quantum Dot Nanoparticles
Quantum dot semiconductor nanoparticle compositions that incorporate ions such as zinc, aluminum, calcium, or magnesium into the quantum dot core have been...
2018/0047877 SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME
A transparent electrode is made of a first transparent electrode and a second transparent electrode containing a metal atom whose concentration is 10 wt % or...
2018/0047876 LIGHT ENGINE ARRAY
The invention discloses a light engine array having at least an anode and a cathode comprising: a first type semiconductor layer; an active layer; and a second...
2018/0047875 PROTECTIVE CAPPING LAYER FOR SPALLED GALLIUM NITRIDE
A method of producing a semiconductor device includes forming a stack including a semiconductor material having a Group III nitride semiconductor material...
2018/0047874 NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME
A nitride semiconductor element includes a sapphire substrate including: a main surface extending in a c-plane of the sapphire substrate, and a plurality of...
2018/0047873 Radiation Body and Method for Producing a Radiation Body
A radiation body and a method for producing a radiation body are disclosed. In an embodiment, the radiation body includes a basic body configured to generate...
2018/0047872 Semiconductor Device Including Oxide Current Aperture
A method for fabricating a semiconductor device includes generating a wafer by generating an N-type semiconductor layer and an active region on the N-type...
2018/0047871 LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREFOR
A light emitting device and a manufacturing method therefor are disclosed. The light emitting device comprises: a patterned sapphire substrate (PSS) including...
2018/0047870 Patterned Layer Design for Group III Nitride Layer Growth
A device having a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a...
2018/0047869 NITRIDE SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING THE SAME
A nitride semiconductor structure and a semiconductor light emitting device are revealed. The semiconductor light emitting device includes a substrate disposed...
2018/0047868 III-NITRIDE LED WITH TUNNEL JUNCTION
A method of forming a HI-Nitride based device comprising: (a) depositing first layers by MOCVD on a substrate, wherein the first layers comprise device layers...
2018/0047866 LIGHT-EMITTING DEVICE AND LIGHT UNIT COMPRISING SAME
The present embodiments disclose a light emitting device. The light emitting device disclosed includes a first conductive semiconductor layer; an active layer that...
2018/0047865 MICRO-LIGHT-EMITTING DIODE DEVICE
A micro-light-emitting diode device includes a first semiconductor layer, an active layer, and a second semiconductor layer. The first semiconductor layer has...
2018/0047864 SYSTEM AND METHOD FOR CRYSTALLINE SHEET GROWTH USING A COLD BLOCK AND GAS JET
A crystallizer for growing a crystalline sheet from a melt may include a cold block having a cold block surface that faces an exposed surface of the melt, the...
2018/0047863 PHOTOVOLTAIC MODULE
A photovoltaic module includes: a solar laminated assembly; a first glass adhered to one surface of the solar laminated assembly; a back sheet or a second...
2018/0047862 PHOTOCONVERSION DEVICE WITH ENHANCED PHOTON ABSORPTION
A photovoltaic device cell comprising a first light transmissive electrical contact, an active region, a second light transmissive electrical contact, and a...
2018/0047861 PHOTOVOLTAIC SYSTEM AND THE MANUFACTURING METHOD THEREOF
A photovoltaic system consists of a waveguide body, luminescent dyes and a photovoltaic cell. Luminescent dyes and their aggregated particulates with larger...
2018/0047860 COLOR CHANGING APPARATUSES WITH SOLAR CELLS
The present disclosure provides a color changing apparatus. The color changing apparatus includes a solar cell assembly to absorb solar energy and converse the...
2018/0047859 FRONT ELECTRODE FOR SOLAR CELL AND SOLAR CELL INCLUDING THE SAME
A front electrode for solar cells and a solar cell, the front electrode including a stepped structure at an outermost surface thereof, wherein the stepped...
2018/0047858 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
Provided is a method of manufacturing a semiconductor device having a photodiode that has a shallow p-n junction and thus achieves high sensitivity to an...
2018/0047857 Back-Illuminated Sensor With Boron Layer
An inspection system including an optical system (optics) to direct light from an illumination source to a sample, and to direct light reflected/scattered from...
2018/0047856 PLASMON-ENHANCED TERAHERTZ GRAPHENE-BASED PHOTODETECTOR AND METHOD OF FABRICATION
A plasmon-enhanced terahertz graphene-based photodetector exhibits an increased absorption efficiency attained by utilizing a tunable plasmonic resonance in...
2018/0047855 POWER SEMICONDUCTOR ELEMENT AND POWER SEMICONDUCTOR MODULE USING SAME
In a Schottky barrier diode comprising silicon carbide: an active region includes a first semiconductor region of a first conductivity type configuring a first...
2018/0047854 BIDIRECTIONAL ZENER DIODE
A bidirectional Zener diode of the present invention includes a semiconductor substrate of a first conductivity type, a first electrode and a second electrode...
2018/0047853 NANOSHEET AND NANOWIRE MOSFET WITH SHARP SOURCE/DRAIN JUNCTION
A semiconductor device that includes a gate structure present on at least two suspended channel structures, and a composite spacer present on sidewalls of the...
2018/0047852 SEMICONDUCTOR DEVICE
It is an object to provide a semiconductor device typified by a display device having a favorable display quality, in which parasitic resistance generated in a...
2018/0047851 VERTICAL THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THE SAME
The present invention discloses a vertical thin film transistor and a method for fabricating the same. A vertical current path is formed in a vertical...
2018/0047850 Method for Manufacturing Semiconductor Device and Manufacturing Apparatus of Semiconductor Device
A semiconductor device including an oxide semiconductor and an organic resin film is manufactured in the following manner. Heat treatment is performed on a...
2018/0047849 SEMI-FLOATING GATE FET
A semi-floating gate transistor is implemented as a vertical FET built on a silicon substrate, wherein the source, drain, and channel are vertically aligned,...
2018/0047848 METHOD OF FABRICATING SEMICONDUCTOR DEVICE
A semiconductor device and a method of fabricating the same, the semiconductor device includes a plurality of fin shaped structures, a trench, a spacing layer...
2018/0047847 TENSILE STRAINED HIGH PERCENTAGE SILICON GERMANIUM ALLOY FINFETS
A thermal mixing process is employed to convert a portion of a silicon germanium alloy fin having a first germanium content and an overlying non-doped...
2018/0047846 METHOD FOR FABRICATING TRANSISTOR WITH THINNED CHANNEL
A method of fabricating a MOS transistor having a thinned channel region is described. The channel region is etched following removal of a dummy gate. The...
2018/0047845 STRUCTURE AND METHOD FOR FORMING STRAINED FINFET BY CLADDING STRESSORS
Various methods and structures for fabricating a strained semiconductor fin of a FinFET device. A strained semiconductor fin structure includes a substrate, a...
2018/0047844 HIGH VOLTAGE MOSFET DEVICES AND METHODS OF MAKING THE DEVICES
A SiC MOSFET device having low specific on resistance is described. The device has N+, P-well and JFET regions extended in one direction (Y-direction) and P+...
2018/0047843 POWER MOSFET, AN IGBT, AND A POWER DIODE
Super-junction MOSFETs by trench fill system requires void-free filling epitaxial growth. This may require alignment of plane orientations of trenches in a...
2018/0047842 SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises a substrate, at least a first cell, and at...
2018/0047841 METHOD OF FORMING A SEMICONDUCTOR DEVICE WITH MULTIPLE ETCH STOP LAYERS AND INTER-LAYER DIELECTRICS
An embodiment is a semiconductor device comprising a first gate structure over a semiconductor substrate, a first etch stop layer (ESL) over the semiconductor...
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