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Patent # Description
2018/0061891 VARIABLE RESISTIVE MEMORY DEVICE
A variable resistive memory device may include a semiconductor substrate, a device layer, an upper metal interconnect, a plurality of memory cells, and an...
2018/0061890 SWITCHING ELEMENT, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
In the cases of performing programming by forming a two-terminal-type variable resistance element on a semiconductor device, it has been difficult to control...
2018/0061889 SWITCHING DEVICE, AND RESISTIVE RANDOM ACCESS MEMORY INCLUDING THE SAME AS A SELECTION DEVICE
A switching device includes a first electrode, a switching layer having a non-memory characteristic, and a second electrode that are disposed over a substrate....
2018/0061888 NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
The nonvolatile memory device includes a semiconductor substrate, a first and a second diffusion regions formed under a surface of the semiconductor substrate,...
2018/0061887 MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) WITH AN INTERCONNECT THAT GENERATES A SPIN CURRENT AND A MAGNETIC...
An MRAM cell having an MTJ stack with a free layer and an interconnect configured to generate a spin current and a magnetic field effect that is used to affect...
2018/0061886 METHODS OF FORMING MAGNETIC MEMORY CELLS, AND METHODS OF FORMING ARRAYS OF MAGNETIC MEMORY CELLS
Methods of forming a magnetic memory cell are disclosed. The method comprises forming a magnetic cell core material over a substrate, wherein forming the...
2018/0061885 ACTUATOR DEVICE
An actuator device (AV) including a main body (10) with a base body (10a) and a buildup body (10b) a plurality of actuators which are formed of actuator bodies...
2018/0061884 X-RAY DETECTION PANEL OF X-RAY DETECTOR AND METHOD OF MANUFACTURING THE SAME
An X-ray detection panel for X-ray detectors and a method of manufacturing the same are disclosed. The X-ray detection panel includes a substrate, a photodiode...
2018/0061883 WIDE SPECTRUM OPTICAL SENSOR
An optical sensor including a semiconductor substrate; a first light absorption region formed in the semiconductor substrate, the first light absorption region...
2018/0061882 IMAGE SENSOR
An image sensor includes a first semiconductor layer having a first semiconductor region and a first insulating region, and a second semiconductor layer under...
2018/0061881 SUCCESSIVE APPROXIMATION REGISTER ANALOG-TO-DIGITAL CONVERTER, CMOS IMAGE SENSOR INCLUDING THE SAME AND...
A complementary metal oxide semiconductor (CMOS) image sensor includes a pixel array suitable for outputting a pixel signal corresponding to incident light; a...
2018/0061880 Structure and Method for 3D Image Sensor
An image sensor structure that includes a first semiconductor substrate having a plurality of imaging sensors; a first interconnect structure formed on the...
2018/0061879 PHOTOELECTRIC CONVERSION APPARATUS AND CAMERA
A photoelectric conversion apparatus includes a photoelectric conversion substrate having photoelectric conversion units and a microlens array arranged above...
2018/0061878 SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS
A solid-state imaging device includes a plurality of pixels each of which includes a photoelectric conversion unit that generates charges by photoelectrically...
2018/0061877 PHOTODIODE GATE DIELECTRIC PROTECTION LAYER
In some embodiments, the present disclosure relates to a method of forming an integrated chip. The method is performed by forming a gate dielectric layer over...
2018/0061876 PHOTOSENSOR SUBSTRATE
A photosensor substrate achieves TFT property stabilization and further improvement in sensor performance. The photosensor substrate includes a substrate 7, a...
2018/0061875 VERTICAL TRANSFER GATE TRANSISTOR AND ACTIVE CMOS IMAGE SENSOR PIXEL INCLUDING A VERTICAL TRANSFER GATE TRANSISTOR
A transfer gate transistor includes a semiconductor substrate including a charge collection source region, a portion forming a channel region and a top region...
2018/0061874 DISPLAY DEVICE WITH SEPARATION MEMBER INCLUDING STEPS
A display device includes: a substrate; a plurality of light-emission elements arranged, on the substrate, in a first direction and a second direction...
2018/0061873 SEMICONDUCTOR DEVICES
Semiconductor devices are provided. The semiconductor devices may include a substrate, a device isolation pattern in the substrate to electrically isolate a...
2018/0061872 PHOTOELECTRIC CONVERSION DEVICE AND IMAGING SYSTEM
A photoelectric conversion device includes a photoelectric conversion portion in a silicon layer having a light-receiving surface. The silicon layer includes a...
2018/0061871 LIGHT-RECEIVING DEVICE HAVING AVALANCHE PHOTODIODES OF DIFFERENT TYPES
A light-receiving device includes a silicon semiconductor substrate, a plurality of first serial connections each of which includes a first avalanche...
2018/0061870 THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME, ARRAY SUBSTRATE AND DISPLAY APPARATUS
A method of fabricating a TFT includes a step of forming a gate electrode, a gate insulation layer, an active layer, a source electrode, a drain electrode, a...
2018/0061869 ELECTRONIC DEVICE AND DISPLAY DEVICE
According to one embodiment, an electronic device includes a first substrate including a first conductive layer, and a second substrate including a second...
2018/0061868 ORGANIC LIGHT-EMITTING DISPLAY DEVICE COMPRISING MULTIPLE TYPES OF THIN-FILM TRANSISTORS AND METHOD OF...
An OLED device includes a low-temperature poly-silicon (LTPS) thin-film transistor having a first channel layer, a first gate electrode, a first source...
2018/0061867 METHODS OF PROTECTING SEMICONDUCTOR OXIDE CHANNEL IN HYBRID TFT PROCESS FLOW
Hybrid silicon TFT and oxide TFT structures and methods of formation are described. In an embodiment, a protection layer is formed over a semiconductor oxide...
2018/0061866 SHIFT REGISTER AND DISPLAY DEVICE AND DRIVING METHOD THEREOF
The power consumption of a shift register or a display device including the shift register is reduced. A clock signal is supplied to a shift register by a...
2018/0061865 THIN FILM TRANSISTOR ARRAY PANEL
A thin film transistor array panel includes a substrate, a gate insulating layer, an interface layer, and a semiconductor layer. The gate insulating layer is...
2018/0061863 DISPLAY DEVICE
Even when a light shielding film is provided between a transistor and a substrate, a threshold voltage of the transistor can be prevented or suppressed from...
2018/0061862 DISPLAY PANEL AND DISPLAY DEVICE
A display panel and a display device are provided. The display panel includes a first substrate, and a second substrate. The first substrate includes active...
2018/0061861 MANUFACTURING METHOD OF DISPLAY DEVICE
A manufacturing method of a display device comprises steps: a lining layer is formed on an array substrate; a conduction layer is formed on the array...
2018/0061860 THIN FILM TRANSISTOR AND ORGANIC LIGHT EMITTING DIODE DISPLAY INCLUDING THE SAME
A thin film transistor includes a substrate, a semiconductor layer on the substrate, a first insulating layer covering the substrate and the semiconductor...
2018/0061859 DISPLAY PANEL, METHOD FOR DRIVING THE SAME, AND DISPLAY DEVICE
The disclosure discloses a display panel, a method for driving the same, and a display device, where a control electrode is arranged on the side of an active...
2018/0061858 DISPLAY PANEL AND DISPLAY DEVICE INCLUDING THE SAME
Disclosed are a display panel and a display device including the same, in which each of non-display area lines, provided in an outer side among a plurality of...
2018/0061857 DISPLAY DEVICE
According to one embodiment, a display device includes an insulating substrate, a first transistor including a first semiconductor layer of silicon and a first...
2018/0061856 HOLE STRUCTURE AND ARRAY SUBSTRATE AND FABRICATION METHOD THEREOF, DETECTION DEVICE AND DISPLAY DEVICE
A hole structure and a fabrication method thereof, an array substrate and a fabrication method thereof, a detection device and a display device are provided....
2018/0061855 DISPLAY DEVICE
A display device can include a substrate including a display area, on which an input image is displayed, and a pad part including a convex portion and a...
2018/0061854 HIGH SNR PIXEL DESIGN
Display panels including mirror pixel layouts and power rail bridges are described. In an embodiment, a display panel includes a plurality of power rail...
2018/0061853 STACKED SOI LATERAL BIPOLAR TRANSISTOR RF POWER AMPLIFIER AND DRIVER
An amplifier circuit including a substrate layer and a plurality of lateral bipolar junction transistors positioned entirely above the substrate. The lateral...
2018/0061852 SEMICONDUCTOR MEMORY DEVICE
According to one embodiment, a semiconductor memory device includes a substrate, a stacked body, a plurality of pillar portions, and an interconnection...
2018/0061851 3D STACKED MULTILAYER SEMICONDUCTOR MEMORY USING DOPED SELECT TRANSISTOR CHANNEL
In 3D stacked multilayer semiconductor memories including NAND and NOR flash memories, a lightly boron-doped layer is formed on top of a heavily boron-doped...
2018/0061850 THREE-DIMENSIONAL MEMORY DEVICE WITH ANGLED WORD LINES AND METHOD OF MAKING THEREOF
A mesa structure is formed over peripheral devices on a substrate. An alternating stack of insulating layers and spacer material layers is formed over the...
2018/0061849 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Performance and reliability of a semiconductor device are improved. An insulating film is formed such that a control gate electrode, a memory gate electrode,...
2018/0061848 METHOD FOR FABRICATING MEMORY DEVICE
A method for fabricating a memory device is provided. In the method, a first gate dielectric layer is formed on a substrate in a first region. A second gate...
2018/0061847 SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
A memory device includes a substrate. An insulation layer is disposed in a recess in the substrate. A first gate structure is disposed over the substrate and...
2018/0061846 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
Semiconductor devices and fabrication methods thereof are provided. An exemplary semiconductor device includes at least one FinFET device. The FinFET device...
2018/0061845 VERTICAL FIELD EFFECT TRANSISTOR INCLUDING INTEGRATED ANTIFUSE
A vertical field effect transistor (FET) includes a vertical semiconductor channel having a first end that contacts an upper surface of a substrate and an...
2018/0061844 VERTICAL FIELD EFFECT TRANSISTOR INCLUDING INTEGRATED ANTIFUSE
A vertical field effect transistor (FET) includes a vertical semiconductor channel having a first end that contacts an upper surface of a substrate and an...
2018/0061843 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A method of forming a nonvolatile memory device includes forming first, second, and third gate structures, with the second and third gate structures including...
2018/0061842 DEVICES WITH CONTACT-TO-GATE SHORTING THROUGH CONDUCTIVE PATHS BETWEEN FINS AND FABRICATION METHODS
Semiconductor devices and methods of fabricating the semiconductor devices for forming conductive paths between fins for contact-to-gate shorting. One method...
2018/0061841 MEMORY METAL SCHEME
A method of fabricating a memory array includes designing first layout sections in a row direction, each first layout section including first and second...
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