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Patent # Description
2018/0102405 SEMICONDUCTOR DEVICE
A semiconductor device includes an outside-of-well n-type region, a p-type well region surrounded by the outside-of-well n-type region, an inside-of-well...
2018/0102404 IMPEDANCE CIRCUIT WITH POLY-RESISTOR
An impedance circuit includes a poly-resistor and a controller. The poly-resistor has a first terminal and a second terminal. The controller generates a first...
2018/0102403 ELECTRO-OPTICAL DEVICE AND ELECTRONIC APPARATUS
Subpixels of R, G, and B corresponding to a scanning line extended in a row direction and a data transfer line extended in a column direction are provided. A...
2018/0102402 DISPLAY DEVICE
A display device includes a substrate including a display region and a non-display region including sub-non-display regions extending from sides of the display...
2018/0102401 DISPLAY APPARATUS
A display apparatus includes: a thin-film transistor including a source electrode, a drain electrode, and a gate electrode; a data line in a layer different...
2018/0102400 DISPLAY DEVICE HAVING AN EMISSION LAYER
A display device includes signal lines and pixels connected thereto. A first pixel includes a first transistor including a first gate electrode, a first...
2018/0102399 FLEXIBLE DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
A flexible display device includes a substrate, a light emitting layer, a first insulating layer, and a conductive layer. The substrate includes a bent region...
2018/0102398 DISPLAY DEVICE
A display device includes a substrate, a semiconductor layer on the substrate, a gate insulating layer on the semiconductor layer and having one or more first...
2018/0102397 AMOLED PIXEL DRIVING CIRCUIT AND PIXEL DRIVING METHOD
The present invention provides an AMOLED pixel driving circuit and a pixel driving method. By utilizing the dual gate thin film transistor to be the drive thin...
2018/0102396 REPAIR STRUCTURE OF LINE DEFECT OF AMOLED DISPLAY PANEL AND REPAIR METHOD
The present invention provides a repair structure of a line defect of an AMOLED display panel and a repair method. The conductive film (410) correspondingly...
2018/0102395 HIGH DENSITY RESISTIVE RANDOM ACCESS MEMORY (RRAM)
A memory cell includes a substrate layer, with a plurality of silicided semiconductor fins stacked on the substrate layer and spaced apart from one another. A...
2018/0102394 OPTOELECTRONIC MODULES THAT HAVE SHIELDING TO REDUCE LIGHT LEAKAGE OR STRAY LIGHT, AND FABRICATION METHODS FOR...
Various optoelectronic modules are described that include an optoelectronic device (e.g., a light emitting or light detecting element) and a transparent cover....
2018/0102393 PHOTO DETECTOR DEVICE
A photo detector device is provided. The photo detector device includes a substrate, a first metal layer, a first interlayer dielectric layer, an active layer,...
2018/0102392 IMAGE SENSOR
An image sensor includes: a pixel array including a plurality of unit pixels that are arrayed in two dimensions, wherein each of the plurality of the unit...
2018/0102391 BUMP STRUCTURES FOR INTERCONNECTING FOCAL PLANE ARRAYS
A method of forming bump structures for interconnecting components includes dry etching a layer of insulating material to create a pattern for bump structures....
2018/0102390 INTEGRATED IMAGING SENSOR WITH TUNABLE FABRY-PEROT INTERFEROMETER
An integrated device including a photodetector, a transparent substrate, and one or more spacers. The photodetector is formed in a portion of a wafer. The one...
2018/0102389 IMAGE SENSOR
An image sensor includes multiple unit pixels defined by a pixel isolation layer on a substrate, at least a pair of photoelectric converters in each of the...
2018/0102388 SOLID-STATE IMAGING APPARATUS
A solid-state imaging apparatus includes: a solid-state imaging device photoelectrically converting light taken by a lens; and a light shielding member...
2018/0102387 COLOR IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME
A color image sensor including an array of pixels is formed in a semiconductor layer having a back side that receives an illumination. Insulated conductive...
2018/0102386 SOLID-STATE IMAGING DEVICE, METHOD OF DRIVING SOLID-STATE IMAGING DEVICE, IMAGING SYSTEM, AND MOVABLE OBJECT
A solid-state imaging device includes pixels each of which includes a photoelectric converter configured to generate charges by photoelectric conversion, a...
2018/0102385 BACK-SIDE ILLUMINATED IMAGE SENSOR
A back-side illuminated image sensor includes memory regions formed in a semiconductor wafer. Each memory region is located between two opaque walls which...
2018/0102384 SOLID-STATE IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME
A method of manufacturing a solid-state image sensor, includes forming a first isolation region of a first conductivity type in a semiconductor layer having...
2018/0102383 THIN FILM TRANSISTOR ARRAY SUBSTRATE AND FABRICATING METHOD THEREOF
A thin film transistor array substrate includes: a base substrate; a first transistor including a first electrode on a surface of the base substrate, a spacer,...
2018/0102382 ARRAY SUBSTRATE AND FABRICATION METHOD THEREOF, AND DISPLAY PANEL
An array substrate and a fabrication method thereof, and a display panel are provided. The array substrate includes: a base substrate; an isolation layer on...
2018/0102381 DISPLAY DEVICE
The disclosed display device includes: a substrate; a gate electrode disposed on the substrate; a first insulating layer disposed on the gate electrode; a...
2018/0102380 THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF AND LIQUID CRYSTAL DISPLAY
The present invention discloses a thin film transistor, a liquid crystal display and the manufacturing method of a thin film transistor. The thin film...
2018/0102379 MANUFACTURE METHOD OF ARRAY SUBSTRATE AND ARRAY SUBSTRATE MANUFACTURED BY THE METHOD
The present invention provides a manufacture method of an array substrate and an array substrate manufactured by the method. By employing one mask to achieve...
2018/0102378 MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
There are provided a memory device and a manufacturing method thereof. A method of manufacturing a memory device may include forming, on a substrate, a...
2018/0102377 INTEGRATED CIRCUIT WITH DECOUPLING CAPACITOR IN A STRUCTURE OF THE TRIPLE WELL TYPE
A well of a first conductivity type is insulated from a substrate of the same first conductivity type by a structure of a triple well type. The structure...
2018/0102376 NON-VOLATILE MEMORY
A non-volatile memory including memory cells is provided. Each of the memory cells includes a substrate, a floating gate structure, a select gate structure,...
2018/0102375 SELECT TRANSISTORS WITH TIGHT THRESHOLD VOLTAGE IN 3D MEMORY
Disclosed herein is a 3D memory with a select transistor, and method for fabricating the same. The select transistor may have a conductive floating gate, a...
2018/0102374 Ferroelectric Capacitor, Ferroelectric Field Effect Transistor, And Method Used In Forming An Electronic...
A method used in forming an electronic component comprising conductive material and ferroelectric material comprises forming a non-ferroelectric metal...
2018/0102373 SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC CAPACITOR AND METHOD OF MANUFACTURING THE SAME
A semiconductor device includes: a semiconductor substrate; a ferroelectric capacitor above the semiconductor substrate; a first guard ring around the...
2018/0102372 FERROELECTRIC COMPOSITION ON SEMICONDUCTOR AND METHOD FOR PRODUCING SAME
Techniques for fabricating ferroelectric materials and semiconductor devices using the materials. Material compositions including strontium, zirconium,...
2018/0102371 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Semiconductors and methods of manufacturing semiconductors are provided. A semiconductor can include a plurality of insulating layers, and a plurality of...
2018/0102370 SEMICONDUCTOR STRUCTURE
A semiconductor structure and a method of manufacturing the same are provided. The semiconductor structure includes a stack including first conductive layers...
2018/0102369 SELECTIVE EPITAXY GROWTH FOR SEMICONDUCTOR DEVICES WITH FIN FIELD-EFFECT TRANSISTORS (FINFET)
A method for forming a Fin field-effect transistor (FinFET) semiconductor structure includes performing an angled ion implantation process at a predetermined...
2018/0102368 SEMICONDUCTOR ARRANGEMENT HAVING CAPACITOR SEPARATED FROM ACTIVE REGION
A semiconductor arrangement includes an active region including a semiconductor device. The semiconductor arrangement includes a capacitor having a first...
2018/0102367 MIRROR CONTACT CAPACITOR
A semiconductor structure and a method for fabricating the same. The semiconductor structure includes a substrate and a bonding layer in contact with a top...
2018/0102366 SEMICONDUCTOR MEMORY DEVICE HAVING COPLANAR DIGIT LINE CONTACTS AND STORAGE NODE CONTACTS IN MEMORY ARRAY AND...
A semiconductor memory device includes a semiconductor substrate having active areas and a trench isolation region between the active areas. The active areas...
2018/0102364 INTEGRATED CIRCUIT DEVICES AND METHOD OF MANUFACTURING THE SAME
An integrated circuit device includes a substrate including a fin active region extending in a first direction, a gate line intersecting the fin active region...
2018/0102363 SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
A semiconductor structure and a fabrication method are provided. A fabrication method includes providing a plurality of fins on a substrate including an NMOS...
2018/0102362 FINFETS WITH CONTROLLABLE AND ADJUSTABLE CHANNEL DOPING
A method of forming features of a finFET structure includes forming fins on a surface of a substrate. A first liner is formed around each fin and a shallow...
2018/0102361 SWITCHING DEVICE
A switching device may be provided with: a semiconductor substrate; a trench provided in an upper surface of the semiconductor substrate; a gate insulating...
2018/0102360 SEMICONDUCTOR DEVICE
A semiconductor chip includes a first circuit and a second circuit having different reference potentials. A first potential which is a reference potential of...
2018/0102359 HIGH DENSITY NANOSHEET DIODES
Embodiments are directed to a method for forming a semiconductor structure by depositing a stack of alternating layers of two materials over a substrate and...
2018/0102358 DEVICE FOR PROTECTION AGAINST ELECTROSTATIC DISCHARGES WITH A DISTRIBUTED TRIGGER CIRCUIT
An ESD protection device includes a MOS transistor connected between a first terminal and a second terminal and having a gate region, source/drain region and a...
2018/0102357 ELECTROSTATIC DISCHARGE GUARD RING WITH SNAPBACK PROTECTION
An electrostatic discharge (ESD) protection structure that provides snapback protections to one or more high voltage circuit components. The ESD protection...
2018/0102356 Transient Voltage Suppression Diodes with Reduced Harmonics, and Methods of Making and Using
A semiconductor device includes a semiconductor die. A transient voltage suppression (TVS) structure is formed in the semiconductor die. A capacitor is formed...
2018/0102355 ESD PROTECTION DEVICE AND METHOD FOR MANUFACTURING THE SAME
Disclosed is an ESD protection device, comprising: a semiconductor substrate; a semiconductor buried layer located in the semiconductor substrate; an epitaxial...
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