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Patent # Description
2018/0108807 LIGHT-EMITTING DEVICES
A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second...
2018/0108806 Patterned Layer Design for Group III Nitride Layer Growth
A device having a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a...
2018/0108805 Semiconductor Material Doping
A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the...
2018/0108804 PHOTON SOURCE AND A METHOD OF FABRICATING A PHOTON SOURCE
A photon source, comprising: a semiconductor structure, said semiconductor structure comprising: a first light emitting diode region; and a second region...
2018/0108803 FIRING FURNACE FOR FIRING ELECTRODE OF SOLAR CELL ELEMENT, METHOD FOR MANUFACTURING SOLAR CELL ELEMENT, AND...
Disclosed is a firing furnace for firing an electrode of a solar cell element, which is provided with: a transfer member, which transfers a substrate having a...
2018/0108802 OPTICAL SENSOR
An optical sensor includes a substrate, light emitting units for emitting light with different wavelengths, and a photodetector. The substrate has at least one...
2018/0108801 PIN PHOTODIODE, X-RAY DETECTING PIXEL, X-RAY DETECTING APPARATUS AND DETECTING METHOD THEREOF
The present application provides a PIN photodiode, an X-ray detecting pixel, an X-ray detecting apparatus and a detecting method thereof. The PIN photodiode...
2018/0108800 PHOTO-DETECTION APPARATUS AND PHOTO-DETECTION SYSTEM
An apparatus wherein, in plane view, a first semiconductor region of a first conductivity type overlaps at least a portion of a third semiconductor region, a...
2018/0108798 DISTRIBUTED PHOTODIODE WITH BUILT-IN EQUALIZATION
A distributed photodiode with FIR filtering function enabled by a lumped transmission line is provided. The distributed photodiode includes inductors, a...
2018/0108797 COMPOUND LIGHT-CONCENTRATING STRUCTURE
The present invention discloses a compound light-concentrating structure, which comprises a concentrating lens and a reflective device. The reflective device...
2018/0108796 CASCADED PHOTOVOLTAIC STRUCTURES WITH INTERDIGITATED BACK CONTACTS
A solar module is provided. The solar module includes a number of photovoltaic structures. Each photovoltaic structure has an interdigitated back contact, and...
2018/0108795 THIN-FILM SOLAR CELL MODULE STRUCTURE AND METHOD OF MANUFACTURING THE SAME
Provided are a thin-film solar cell module structure and a method of manufacturing the same.
2018/0108794 SPACE-QUALIFIED SOLAR CELL MODULE WITH INTERCONNECTION OF NEIGHBORING SOLAR CELLS ON A COMMON BACK PLANE
A space-qualified solar cell assembly comprising a plurality of space-qualified solar cells mounted on a support, the support comprising a plurality of...
2018/0108793 LIFTOFF PROCESS FOR EXFOLIATION OF THIN FILM PHOTOVOLTAIC DEVICES AND BACK CONTACT FORMATION
A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber...
2018/0108792 SOLAR CELL
A solar cell comprising a semiconductor substrate, an intrinsic semiconductor layer, a second conductive type semiconductor layer, a transparent conductive...
2018/0108791 METAL-ASSISTED ETCH COMBINED WITH REGULARIZING ETCH
In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing...
2018/0108790 TRANSPARENT CONDUCTIVE ELECTRODE FOR THREE DIMENSIONAL PHOTOVOLTAIC DEVICE
A photovoltaic device includes a substrate layer having a plurality of three-dimensional structures formed therein providing a textured profile. A first...
2018/0108789 METHOD FOR MANUFACTURING AN EDGE TERMINATION FOR A SILICON CARBIDE POWER SEMICONDUCTOR DEVICE
A method for manufacturing an edge termination structure for a silicon carbide power semiconductor device having a central region and an edge region is...
2018/0108788 Schottky Diode and Method for Its Manufacturing
The invention disclosure describes a manufacturing method for realizing so-called JBS areas for a unipolar power diode on the basis of diamond. In this special...
2018/0108787 PERFECTLY SYMMETRIC GATE-ALL-AROUND FET ON SUSPENDED NANOWIRE
A semiconductor device including a plurality of suspended nanowires and a gate structure that is present on a channel region portion of the plurality of...
2018/0108786 ARRAY SUBSTRATE, LIQUID CRYSTAL DISPLAY PANEL AND LIQUID CRYSTAL DISPLAY DEVICE
An array substrate, a liquid crystal display panel and a liquid crystal display device are disclosed. The present invention designs that a width of the gate...
2018/0108785 SEMICONDUCTOR DEVICE
High field-effect mobility is provided for a transistor including an oxide semiconductor. Further, a highly reliable semiconductor device including the...
2018/0108784 LOW TEMPERATURE POLY-SILICON THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
A low temperature poly-silicon thin film transistor includes at least an interlayer dielectric layer formed of a material including silicon oxide and silicon...
2018/0108783 PREPARATION METHODS FOR SEMICONDUCTOR LAYER AND TFT, TFT, ARRAY SUBSTRATE
Embodiments of the present disclosure provide preparation methods for a semiconductor layer and a TFT, a TFT and an array substrate. The preparation method for...
2018/0108782 MANUFACTURING METHOD OF TFT SUBSTRATE AND TFT SUBSTRATE
The invention provides a manufacturing method of TFT substrate and a TFT substrate. The method provides a dual-gate structure symmetrically disposed on both...
2018/0108781 LIGHT EMITTING DIODE DISPLAY SUBSTRATE, A METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE
A light emitting diode display substrate, a method of manufacturing the same, and a display device are provided. The method includes: forming a planarization...
2018/0108780 THIN FILM TRANSISTOR AND MANUFACTURE METHOD THEREOF
The disclosure provides a thin film transistor (TFT) and a manufacture method thereof. The TFT includes: a substrate; a gate electrode, formed on the...
2018/0108779 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
A semiconductor device is disclosed. The device includes a substrate including an active region defined by a device isolation layer, a fin pattern protruding...
2018/0108778 FORMATION OF FINFET JUNCTION
A finFET structure, and method of forming such structure, in which a germanium enriched nanowire is located in the channel region of the FET, while...
2018/0108777 SEMICONDUCTOR DEVICE HAVING FIRST AND SECOND EPITAXIAL MATERIALS
A semiconductor device includes a first gate stack over a substrate. The semiconductor device further includes a first epitaxial (epi) material in the...
2018/0108776 VERTICAL TRANSISTORS STRESSED FROM VARIOUS DIRECTIONS
A vertical transistor includes a semiconductor substrate, and fin(s) over the semiconductor substrate (n-type fin(s) and/or p-type fin(s)), the fin(s) acting...
2018/0108775 STRUCTURE OF SEMICONDUCTOR DEVICE WITH SOURCE/DRAIN STRUCTURES
Structures of a semiconductor device are provided. The semiconductor device includes a substrate, a gate structure over the substrate, and a first recess and a...
2018/0108774 Semiconductor Device and Method for Manufacturing Same
A semiconductor device includes an n+ type silicon carbide substrate, an n- type layer, an n type layer, a plurality of trenches, a p type region, an n+ type...
2018/0108773 ARRAY SUBSTRATE AND DISPLAY DEVICE
An array substrate and a display device are provided. The array substrate includes a base substrate and a gate metal layer, an active layer and a source/drain...
2018/0108772 SPLIT FIN FIELD EFFECT TRANSISTOR ENABLING BACK BIAS ON FIN TYPE FIELD EFFECT TRANSISTORS
A method of forming the semiconductor device that may include forming a trench in a substrate, and forming a metal nitride in the trench. The method may...
2018/0108771 APPROACH TO MINIMIZATION OF STRAIN LOSS IN STRAINED FIN FIELD EFFECT TRANSISTORS
A method of fabricating a vertical fin field effect transistor with a strained channel, including, forming a strained vertical fin on a substrate, forming a...
2018/0108770 SELF-ALIGNED GATE CUT WITH POLYSILICON LINER OXIDATION
A method of forming a semiconductor device that includes forming a gate structure over a plurality of fin structures, wherein the gate structure provides a...
2018/0108769 FORMING STRAINED CHANNEL WITH GERMANIUM CONDENSATION
A method for forming a semiconductor device includes forming a strained fin on a substrate, a sacrificial gate on a channel region of the fin, a first spacer...
2018/0108768 COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING COMPOUND SEMICONDUCTOR DEVICE
A compound semiconductor device disclosed herein includes: a GaN carrier transit layer formed on a substrate; a barrier layer formed on the carrier transit...
2018/0108767 METHOD FOR MANUFACTURING A HEMT TRANSISTOR AND HEMT TRANSISTOR WITH IMPROVED ELECTRON MOBILITY
A method for manufacturing a HEMT transistor comprising the steps of: providing a wafer comprising a semiconductor body including a heterojunction structure...
2018/0108766 VERTICAL POWER COMPONENT
A vertical power component includes a doped silicon substrate of a first conductivity type. A local well of a second conductivity type extends from an upper...
2018/0108765 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
A method of producing a semiconductor device is disclosed in which, after proton implantation is performed, a hydrogen-induced donor is formed by a furnace...
2018/0108764 SEMICONDUCTOR DEVICE
In an active region, a MOS gate of an IGBT is provided on a front surface side of a semiconductor substrate. In an edge termination region, a Zener diode is...
2018/0108763 SEMICONDUCTOR-ON-INSULATOR LATERAL HETEROJUNCTION BIPOLAR TRANSISTOR HAVING EPITAXIALLY GROWN INTRINSIC BASE...
After forming a trench extending through an insulator layer and an underlying top semiconductor portion that is comprised of a first semiconductor material and...
2018/0108762 BIPOLAR TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
A bipolar transistor is supported by a single-crystal silicon substrate including a collector contact region. A first epitaxial region forms a collector region...
2018/0108761 TUNNEL FIELD-EFFECT TRANSISTOR (TFET) WITH LATERAL OXIDATION
A vertical-mode tunnel field-effect transistor (TFET) is provided with an oxide region that may be laterally positioned relative to a source region. The oxide...
2018/0108760 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A...
2018/0108759 THIN FILM TRANSISTOR, FABRICATION METHOD THEREOF, AND ARRAY SUBSTRATE
A thin film transistor, a fabrication method thereof, and an array substrate are provided. The fabrication method includes: forming a semiconductor layer and a...
2018/0108758 SELF-ALIGNED CHANNEL-ONLY SEMICONDUCTOR-ON-INSULATOR FIELD EFFECT TRANSISTOR
In one example, a field effect transistor includes a fin. The fin includes a conducting channel formed from semiconductor-on-insulator and source/drain regions...
2018/0108757 POLYSILICON THIN FILM AND MANUFACTURING METHOD THEREOF, TFT AND MANUFACTURING METHOD THEREOF, AND DISPLY PANEL
A manufacturing method for a polysilicon thin film is provided. The manufacturing method for a polysilicon thin film includes forming a polysilicon layer,...
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