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Patent # Description
2018/0108756 THIN FILM TRANSISTOR AND FABRICATION METHOD THEREOF, ARRAY SUBSTRATE AND FABRICATION METHOD THEREOF, DISPLAY...
The disclosure provides a thin film transistor (TFT) and a fabrication method thereof, an array substrate and a fabrication method thereof, and a display...
2018/0108755 FINFET LDMOS DEVICES WITH IMPROVED RELIABILITY
A finFET LDMOS semiconductor device includes a first well disposed adjacent to a second well on a substrate and a third well disposed on the substrate, wherein...
2018/0108754 VERTICAL TRANSISTOR WITH VARIABLE GATE LENGTH
A method includes forming a plurality of fins on a substrate. The method further includes forming a plurality of deep trenches in the substrate and interposed...
2018/0108753 HEMTs with an AlxGa1-xN Barrier layer Grown by Plasma Enhanced Atomic Layer Deposition
In a method of manufacturing a high-electron mobility transistor (HEMT), a first Group III-V semiconductor layer is formed on a substrate. The first Group...
2018/0108752 STRESS RETENTION IN FINS OF FIN FIELD-EFFECT TRANSISTORS
Embodiments of the present invention provide a structure and method of minimizing stress relaxation during fin formation. Embodiments may involve forming a...
2018/0108751 Integrated strained stacked nanosheet FET
Transistors include stress liners, with one or more semiconductor structures between the stress liners. The stress liners provide a stress on the one or more...
2018/0108750 TECHNIQUES FOR FORMING TRANSISTORS ON THE SAME DIE WITH VARIED CHANNEL MATERIALS
Techniques are disclosed for forming transistors on the same substrate with varied channel materials. The techniques include forming a replacement material...
2018/0108749 TRENCH SILICIDE CONTACTS WITH HIGH SELECTIVITY PROCESS
A method for forming self-aligned contacts includes patterning a mask between fin regions of a semiconductor device, etching a cut region through a first...
2018/0108748 Gate Structure and Method of Forming the Same
A method of forming a gate structure includes forming an opening through an insulating layer and forming a first work function metal layer in the opening. The...
2018/0108747 III-V SEMICONDUCTOR LAYERS, III-V SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
In a method of forming a Group III-V semiconductor layer on a Si substrate, a first source gas containing a Group V element is supplied to a surface of the Si...
2018/0108746 THIN FILM TRANSISTORS (TFTS), MANUFACTURING METHODS OF TFTS, AND CMOS COMPONENTS
The present disclosure relates to a TFT, a manufacturing method of TFTs, and a CMOS component. The TFT includes a substrate, a LTPS layer arranged close to the...
2018/0108745 SEMICONDUCTOR STRUCTURES AND FABRICATION METHODS THEREOF
A method for fabricating a semiconductor structure includes providing a base structure including an NMOS region, forming an interlayer dielectric layer on the...
2018/0108744 METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE
A method of manufacturing a semiconductor memory device and a semiconductor memory cell thereof are provided. The semiconductor memory device formed from the...
2018/0108743 POWER ELECTRONIC AND OPTOELECTRONIC DEVICES WITH INTERDIGITATED ELECTRODES
This invention relates to interdigitated electrodes for power electronic and optoelectronic devices where field and current distribution determine the device...
2018/0108742 Semiconductor Device and Method of Forming the Same
A semiconductor device includes a substrate, at least one semiconductor fin, and at least one epitaxy structure. The semiconductor fin is present on the...
2018/0108741 Lattice-Mismatched Semiconductor Structures with Reduced Dislocation Defect Densities and Related Methods for...
A method of forming a semiconductor structure includes forming an opening in a dielectric layer, forming a recess in an exposed part of a substrate, and...
2018/0108740 METHOD FOR MAKING AN ELECTRICAL CONTACT ON A GRAPHITE LAYER, CONTACT OBTAINED BY USING SUCH A METHOD AND...
A method for manufacturing a graphite layer on an interstitial carbide layer, includes depositing a metal layer formed by one or more metals on a carbide...
2018/0108739 HANDLE FOR SEMICONDUCTOR-ON-DIAMOND WAFERS AND METHOD OF MANUFACTURE
Methods for mounting and dismounting thin and/or bowed semiconductor-on-diamond wafers to a carrier are disclosed that flatten said wafers and provide...
2018/0108738 SEMICONDUCTOR DEVICE
A semiconductor device is provided, including: a first conductivity-type drift region formed in the semiconductor substrate; a second conductivity-type base...
2018/0108737 SEMICONDUCTOR DEVICE
A semiconductor device is provided, including: a semiconductor substrate; a transistor section provided in the semiconductor substrate; and a diode section...
2018/0108736 COMPRESSIVE STRAIN SEMICONDUCTOR SUBSTRATES
A method for forming a compressively strained semiconductor substrate includes forming a lattice adjustment layer on a semiconductor substrate by forming...
2018/0108735 APPROACH TO MINIMIZATION OF STRAIN LOSS IN STRAINED FIN FIELD EFFECT TRANSISTORS
A method of fabricating a vertical fin field effect transistor with a strained channel, including, forming a strained vertical fin on a substrate, forming a...
2018/0108734 Semiconductors With Increased Carrier Concentration
Within examples, a semiconductor device includes a first structure that includes a first doped semiconductor material of a first doping type. The semiconductor...
2018/0108733 PROCESS FOR FABRICATING A FIELD EFFECT TRANSISTOR HAVING A COATING GATE
A process for fabricating a gate-wrap-around field-effect transistor is provided, including: providing a superposition of first to third nanowires, each made...
2018/0108732 NOTCHED FIN STRUCTURES AND METHODS OF MANUFACTURE
The present disclosure relates to semiconductor structures and, more particularly, to notched fin structures and methods of manufacture. The structure...
2018/0108731 METHOD FOR LOCAL ISOLATION BETWEEN TRANSISTORS PRODUCED ON AN SOI SUBSTRATE, IN PARTICULAR AN FDSOI SUBSTRATE,...
An integrated circuit may include an SOI substrate having a buried insulating layer, and a semiconductor film above the buried insulating layer. The...
2018/0108730 METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND SILICON CARBIDE SEMICONDUCTOR DEVICE
A method for manufacturing a silicon carbide semiconductor device includes the steps of preparing a silicon carbide substrate having a first main surface and a...
2018/0108729 STRUCTURES TO AVOID FLOATING RESURF LAYER IN HIGH VOLTAGE LATERAL DEVICES
A semiconductor device contains an LDNMOS transistor with a lateral n-type drain drift region and a p-type RESURF region over the drain drift region. The...
2018/0108728 METHOD OF FABRICATING SEMICONDUCTOR DEVICES
Provided is a method of fabricating a semiconductor device. The method includes forming an oxide film on a target layer, forming a first mask film on the oxide...
2018/0108727 PILLAR RESISTOR STRUCTURES FOR INTEGRATED CIRCUITRY
Integrated circuit structures including a pillar resistor disposed over a surface of a substrate, and fabrication techniques to form such a resistor in...
2018/0108726 ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND MANUFACTURING METHOD THEREOF
An organic light-emitting display apparatus and a manufacturing method thereof. The organic light-emitting display apparatus includes a substrate, a display...
2018/0108725 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
It is an object of the present invention to prevent an influence of voltage drop due to wiring resistance, trouble in writing of a signal into a pixel, and...
2018/0108724 ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME
A display device includes: a substrate including a first area, a second area, and a bending portion between the first area and the second area; a pixel at the...
2018/0108723 DISPLAY DEVICE AND METHOD OF MANUFACTURING A DISPLAY DEVICE
A display device according to an embodiment of the present invention includes: a base material including a display region, and a peripheral region which is...
2018/0108722 DISPLAY DEVICE
A display device includes a substrate having an edge portion, a display region located on the substrate and separated from the edge portion, a drive circuit...
2018/0108720 ORGANIC LIGHT-EMITTING DISPLAY DEVICE
An organic light-emitting diode (OLED) display device includes a substrate, a first gate electrode on the substrate, a second gate electrode on the first gate...
2018/0108719 OLED DISPLAY DEVICE AND MANUFACTURE METHOD THEREOF
A method for manufacturing an OLED display device that includes pixel areas is provided. A first and a second substrates are provided. TFTs are arranged on the...
2018/0108718 ORGANIC LIGHT-EMITTING DIODE PANEL AND MANUFACTURING METHOD USING THE SAME
An organic light-emitting diode panel and a manufacturing method using the same are provided in the present invention. The OLED panel includes at least a...
2018/0108717 DISPLAY DEVICE
A display device includes a substrate comprising a first plastic layer, a second plastic layer on the first plastic layer, and an inorganic layer between the...
2018/0108716 FLEXIBLE DISPLAY
Example implementations relate to flexible displays. For example, a flexible display system may comprise a plurality of display layers, an anti-reflective...
2018/0108715 ORGANIC EL DISPLAY DEVICE
An organic EL display device includes a bank having an inclined surface, a first electrode formed on the inclined surface, an organic film including a light...
2018/0108714 DISPLAY DEVICE AND MANUFACTURING METHOD OF A DISPLAY DEVICE
A manufacturing method of a display device according to an embodiment of the present invention includes: the display device including a protection plate having...
2018/0108713 Light-Emitting Device, Electronic Appliance, and Lighting Device
A light-emitting device and a lighting device each of which includes a plurality of light-emitting elements exhibiting light with different wavelengths are...
2018/0108712 DISPLAY DEVICE AND ELECTRICAL DEVICE USING THE SAME
A display device includes: a substrate comprising a first region and a second region bent relative to the first region; a plurality of first pixels at the...
2018/0108711 DISPLAY DEVICE AND ELECTRONIC APPARATUS
A display device includes a pixel portion including a plurality of pixels; a display switching function portion that displays an image based on light emitted...
2018/0108710 TOUCH DISPLAY PANEL
The disclosure relates to a touch display panel, including a first substrate, an organic light emitting diode (OLED) device layer, a spacer, a first touch...
2018/0108709 Organic Light Emitting Diode Device Integrated with Color Filter Electrode and Method of Manufacturing the Same
Provided are an organic light emitting diode (OLED) device integrated with a color filter electrode, which is formed by inserting an intermediate layer having...
2018/0108708 RESISTIVE MEMORY CELL STRUCTURES AND METHODS
Resistive memory cell structures and methods are described herein. One or more memory cell structures comprise a first resistive memory cell comprising a first...
2018/0108707 THRESHOLD SWITCHING DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC DEVICE INCLUDING THE SAME
A threshold switching device may include: a first electrode layer; a second electrode layer; a first insulating layer interposed between the first and second...
2018/0108706 SPIN-SELECTIVE ELECTRON RELAY
Structures including a spin torque transfer magnetic tunnel junction (MTJ) stack and methods for fabricating same. A first contact is coupled with a first...
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