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Patent # Description
2018/0108705 LIGHT-EMITTING DIODE DEVICE
A light-emitting diode device includes a substrate; a plurality of light-emitting units formed on the substrate, wherein the plurality of light-emitting units...
2018/0108704 WAFER LEVEL LIGHT-EMITTING DIODE ARRAY
A light emitting diode array is provide to include: a substrate; light emitting diodes positioned over the substrate, each including a first semiconductor...
2018/0108703 Vertically Integrated Image Sensor Chips and Methods for Forming the Same
A method includes bonding a Backside Illumination (BSI) image sensor chip to a device chip, forming a first via in the BSI image sensor chip to connect to a...
2018/0108702 Methods of Making Semiconductor X-Ray Detector
Disclosed herein is a method of making an apparatus suitable for detecting x-ray, the method comprising: attaching a chip comprising an X-ray absorption layer...
2018/0108701 INFRARED DETECTOR, INFRARED DETECTION SENSOR HAVING AN INFRARED DETECTOR AND METHOD OF MANUFACTURING THE SAME
An infrared detector includes a substrate, a light blocking layer on the substrate, a lower electrode on the light blocking layer, the lower electrode...
2018/0108700 Receiver Array Packaging
The present disclosure relates to optical receiver systems. An example system includes a plurality of substrates disposed in an edge-to-edge array along a...
2018/0108699 Design Method for an Image Sensor Device
A design method for an image sensor device includes providing an initial design for an image sensor device. The initial design includes a pixel array region...
2018/0108698 CMOS IMAGE SENSOR
A method for manufacturing a semiconductor device includes providing a substrate structure including a substrate having a front side and a back side and a...
2018/0108697 STACKED LENS STRUCTURE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS
A deformation of a stacked lens is suppressed. A stacked lens structure has a configuration in which substrates with lenses having a lens disposed on an inner...
2018/0108696 IMAGING DEVICE
An imaging device which does not include a color filter and does not need arithmetic processing using an external processing circuit is provided. A first...
2018/0108695 OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT
The invention relates to an optoelectronic semiconductor component (100) comprising the following --an optoelectronic semiconductor chip (2), the lateral...
2018/0108694 VARIABLE OPTICAL FILTER AND A WAVELENGTH-SELECTIVE SENSOR BASED THEREON
A variable optical filter is disclosed including a bandpass filter and a blocking filter. The bandpass filter includes a stack of alternating first and second...
2018/0108693 METHOD OF RECOVERY OF MOTFT BACKPLANE AFTER a-Si PHOTODIODE FABRICATION
A method of fabricating a structure including a high mobility backplane and a-Si photodiode imager includes forming a matrix of metal oxide thin film...
2018/0108692 OPTICAL SENSOR DEVICE AND METHOD FOR MANUFACTURING THE OPTICAL SENSOR DEVICE
An optical sensor device includes a semiconductor substrate comprising a conversion region to convert an electromagnetic signal into photo-generated charge...
2018/0108691 ORGANIC PHOTOELECTRIC CONVERSION ELEMENT, OPTICAL AREA SENSOR, IMAGING DEVICE, AND IMAGING APPARATUS
An organic photoelectric conversion element includes an anode, a cathode, and a photoelectric conversion portion between the anode and the cathode. The...
2018/0108690 SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS
A solid-state imaging device and method of making a solid-state imaging device are described herein. By way of example, the solid-state imaging device includes...
2018/0108689 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
The present inventive concept relates to a display device and a manufacturing method thereof. A display device according to an exemplary embodiment of the...
2018/0108688 THIN FILM TRANSISTOR, METHOD FOR FABRICATING THE SAME, AND DISPLAY DEVICE
The disclosure discloses a thin film transistor, a method for fabricating the same, and a display device so as to avoid a source and a drain from being...
2018/0108687 BROKEN LINE REPAIR METHOD OF TFT SUBSTRATE
Disclosed is a broken line repair method of a TFT substrate. The method first finds out a broken line in the TFT substrate and a position of a broken point on...
2018/0108686 DISPLAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, DISPLAY PANEL AND DISPLAY DEVICE
A display substrate and a manufacturing method thereof, a display panel and a display device are provided. The display substrate has a metal overlap region and...
2018/0108685 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
A display device according to an exemplary embodiment includes: a substrate including a pixel area and a transmission area adjacent to the pixel area; a...
2018/0108684 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
A method for manufacturing a display device includes forming a first gate metal wire on a substrate, forming a first insulation layer that covers the first...
2018/0108683 DISPLAY DEVICE
A display device includes: a first substrate; a second substrate facing the first substrate; a first electrode disposed on a first surface of the first...
2018/0108682 SUBSTRATE, CHIP ON FILM AND ELECTRONIC EQUIPMENT
The embodiments of the present invention provide a substrate, a chip on film and an electronic equipment. The substrate includes a plurality of first bonding...
2018/0108681 METHOD FOR BONDING PINS IN OUTER LEAD BONDING AREA
The present invention provides a method for bonding pins in OLB area, by forming via holes on the planarization layer of the OLB area corresponding to each...
2018/0108680 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
An object is to establish a processing technique in manufacture of a semiconductor device in which an oxide semiconductor is used. A gate electrode is formed...
2018/0108679 DISPLAY DEVICE
A display device includes a plurality of pixel repairing blocks and each pixel repairing block includes a first sub-pixel unit and a second sub-pixel unit. The...
2018/0108678 PIXEL STRUCTURE
A pixel structure includes a pixel electrode, a data selection line and an isolation line. The isolation line is disposed along the pixel electrode. The pixel...
2018/0108677 DISPLAY PANEL AND MANUFACTURING METHOD THEREOF
The display panel includes a first substrate, first signal lines, second signal lines, third signal lines, thin film transistors, pixel electrodes, and at...
2018/0108676 ARRAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE
An array substrate, a method of manufacturing the same, and a display device are provided. In the array substrate of the present disclosure, the gate cutout is...
2018/0108675 Integrated Circuit Including Buried Cavity and Manufacturing Method
In accordance with an embodiment of an integrated circuit, a cavity is buried in a semiconductor body below a first surface of the semiconductor body. An...
2018/0108674 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes bit lines extending along a first direction, the bit lines being arranged along a second direction intersecting the first...
2018/0108673 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes bit lines extending along a first direction, the bit lines being arranged along a second direction intersecting the first...
2018/0108672 SEMICONDUCTOR DEVICE INCLUDING DIELECTRIC LAYER
A semiconductor device includes a stack structure on a substrate, the stack structure including interlayer insulating layers and first gate electrodes...
2018/0108671 THREE-DIMENSIONAL MEMORY DEVICE WITH LEAKAGE REDUCING SUPPORT PILLAR STRUCTURES AND METHOD OF MAKING THEREOF
Memory openings and support openings can be formed through an alternating stack of insulating layers and sacrificial material layers. A set of dielectric...
2018/0108670 Methods Of Forming An Array Of Elevationally-Extending Strings Of Memory Cells, Methods Of Forming Polysilicon,...
A method of forming poly silicon comprises forming a first polysilicon-comprising material over a substrate, with the first polysilicon-comprising material...
2018/0108669 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATION
Some embodiments include a semiconductor device having a stack structure including a source comprising polysilicon, an etch stop of oxide on the source, a...
2018/0108668 FLASH MEMORY DEVICE
An integrated circuit product includes a silicon-on-insulator (SOI) substrate and a flash memory device positioned in a first area of the SOI substrate. The...
2018/0108667 FLASH MEMORY DEVICE AND MANUFACTURE THEREOF
A flash memory device and its manufacturing method, which is related to semiconductor techniques. The flash memory device comprises: a substrate; and a memory...
2018/0108666 Asymmetric Dense Floating Gate Nonvolatile Memory with Decoupled Capacitor
A nonvolatile memory ("NVM") bitcell with one or more active regions capacitively coupled to the floating gate but that are separated from both the source and...
2018/0108665 CONVEX SHAPED THIN-FILM TRANSISTOR DEVICE HAVING ELONGATED CHANNEL OVER INSULATING LAYER
The present invention provides a semiconductor device that has a shorter distance between the bit lines and easily achieves higher storage capacity and...
2018/0108664 Memory Devices Using Etching Stop Layers
A memory device may include a gate structure including a plurality of gate electrode layers and a plurality of insulating layers alternately stacked on a...
2018/0108663 SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING THE SAME
A semiconductor device includes a substrate including first and second active patterns thereon, a first gate electrode intersecting the first and second active...
2018/0108662 SEMICONDUCTOR DEVICE
A semiconductor device includes an active region on a substrate, a device isolation film on the substrate to define the active region, a gate trench including...
2018/0108661 MODULATING TRANSISTOR PERFORMANCE
A method of forming an improved field-effect transistor device is provided. The method includes forming a tensile stressor near a first semiconductor fin. The...
2018/0108660 SPACER FORMATION PREVENTING GATE BENDING
A method of forming a semiconductor structure includes depositing a spacer material over a top surface of a substrate and two or more spaced-apart gates formed...
2018/0108659 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE
A semiconductor device includes a first vertical field effect transistor (VFET) formed on a substrate, and including a first fin and a first gate formed on the...
2018/0108658 SOLID-STATE IMAGE SENSOR, IMAGE CAPTURING DEVICE, AND ELECTRONIC DEVICE
[Object] The present technology relates to a solid-state image sensor, image capturing device, and electronic device, capable of setting a reference voltage...
2018/0108657 Thin Film Transistor and Method of Manufacturing the Same, Array Substrate, and Display Device
A complementary thin film transistor includes an N-type metal oxide thin film transistor and a P-type metal oxide thin film transistor. A method of...
2018/0108656 ASYMMETRICAL FIN STRUCTURE AND METHOD OF FABRICATING THE SAME
An asymmetrical fin structure includes a substrate. The substrate includes a top surface. A fin element extends from the substrate and connects to the...
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