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Patent # Description
2018/0114875 OPTICAL SENSOR MODULE AND A WEARABLE DEVICE INCLUDING THE SAME
An optical sensor module has a light receiver and a light-emitter which is surrounded by a light blocking wall, wherein the light receiver is disposed on a...
2018/0114874 PHOTOELECTRIC CONVERSION DEVICE
A photoelectric conversion device according to an embodiment of the present invention includes an electrode layer, a first semiconductor layer, a second...
2018/0114873 SOLAR CELL, METHOD FOR MANUFACTURING SAME, SOLAR CELL MODULE AND WIRING SHEET
The solar cell includes: a first metal seed layer and a first plating layer provided on a first surface of a photoelectric conversion section; a second metal...
2018/0114872 CONDUCTIVE PASTE, ELECTRODE AND SOLAR CELL
The present invention relates to conductive pastes, suitable for use in solar cells, a method for the manufacture of a light receiving surface electrode of a...
2018/0114871 SOLAR CELL
A solar cell is provided. The solar cell includes a Si substrate having a first surface and a second surface opposite to each other, an emitter, a first...
2018/0114870 OPTICAL PACKAGE STRUCTURE
A package structure includes a substrate, an interconnection unit, and an optical unit. The substrate has a surface. The interconnection unit is disposed on...
2018/0114869 MIS CAPACITOR FOR FINNED SEMICONDUCTOR STRUCTURE
MIS capacitors are formed using a finned semiconductor structure. A highly doped region including the fins is formed within the structure and forms one plate...
2018/0114868 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
This semiconductor device includes: a semiconductor layer that is formed of first conductivity-type SiC; a plurality of trenches that are formed in the...
2018/0114867 METHOD FOR PRODUCTION OF COMPONENTS COMPRISING A SCHOTTKY DIODE BY MEANS OF PRINTING TECHNOLOGY
The invention concerns a method for production of components comprising a Schottky diode by means of printing technology. The method involves a step of...
2018/0114866 DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
A display device includes: a flexible substrate; a semiconductor layer on the flexible substrate; a passivation layer on the semiconductor layer; an alignment...
2018/0114865 REDUCED PARASITIC CAPACITANCE AND CONTACT RESISTANCE IN ETSOI DEVICES
A method for forming a semiconductor device includes etching a semiconductor layer using a gate structure and spacers as a mask to protect portions of the...
2018/0114864 THIN-FILM TRANSISTOR, METHOD FOR FABRICATING THE SAME, ARRAY SUBSTRATE AND DISPLAY PANEL CONTAINING THE SAME
The present disclosure provides a thin-film transistor (TFT). The TFT includes a gate electrode on a substrate; a gate insulating layer covering the gate...
2018/0114863 FINFET TRANSISTOR GATE AND EPITAXY FORMATION
Embodiments are directed to a method of forming a semiconductor device and resulting structures that reduce shallow trench isolation (STI) undercutting,...
2018/0114862 METHOD FOR PRODUCING THIN FILM TRANSISTOR, AND THIN FILM TRANSISTOR
A method for producing a thin film transistor and a thin film transistor that can suppress deterioration and variation in performance are provided. A method...
2018/0114861 FORMING A CONTACT FOR A SEMICONDUCTOR DEVICE
A method for fabricating a semiconductor device includes forming a gate stack on a semiconductor substrate, forming a source/drain region on an exposed portion...
2018/0114860 BOTTOM SPACER FORMATION FOR VERTICAL TRANSISTOR
A bilayer of silicon dioxide and silicon nitride is formed on exposed surfaces of at least one semiconductor fin having a bottom source/drain region located at...
2018/0114859 SELF ALIGNED TOP EXTENSION FORMATION FOR VERTICAL TRANSISTORS
A method of forming a semiconductor device that includes providing a vertically orientated channel region; and converting a portion of an exposed source/drain...
2018/0114858 TRANSISTOR STRUCTURE
A transistor structure including a gate, a first dielectric layer, a first contact and a second contact is provided. The gate is disposed on a substrate. The...
2018/0114857 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
A semiconductor device according to the present invention includes a semiconductor layer, a gate trench defined in the semiconductor layer, a first insulating...
2018/0114856 SEMICONDUCTOR DEVICE
The semiconductor device of the present invention includes a semiconductor layer which includes an active portion and a gate finger portion, an MIS transistor...
2018/0114855 COMPOSITE OXIDE SEMICONDUCTOR AND TRANSISTOR
A novel material and a transistor including the novel material are provided. One embodiment of the present invention is a composite oxide including at least...
2018/0114854 METAL OXIDE THIN FILM TRANSISTOR AND METHOD OF PREPARING THE SAME
A metal oxide thin film transistor and a method of preparing the same, the method includes the following steps: providing a substrate; forming a buffer layer,...
2018/0114853 FINFET DEVICE WITH CONTROLLED CHANNEL STOP LAYER DEPTH
A fin-type semiconductor device includes a semiconductor structure having a plurality of fins formed in a substrate and a plurality of trenches each disposed...
2018/0114852 ADAPTIVE CHARGE BALANCED EDGE TERMINATION
In one embodiment, a semiconductor device can include a substrate including a first type dopant. The semiconductor device can also include an epitaxial layer...
2018/0114851 TAPERED VERTICAL FET HAVING III-V CHANNEL
A vertical field effect transistor includes a first source/drain region formed on or in a substrate. A tapered fin is formed a vertical device channel and has...
2018/0114850 METHODS OF SIMULTANEOUSLY FORMING BOTTOM AND TOP SPACERS ON A VERTICAL TRANSISTOR DEVICE
A vertical transistor device includes a vertically oriented channel semiconductor structure, a bottom source/drain (S/D) region, a top source/drain (S/D)...
2018/0114849 VERTICAL FIELD EFFECT TRANSISTORS WITH BOTTOM SOURCE/DRAIN EPITAXY
A vertical fin field-effect-transistor and a method for fabricating the same. The vertical fin field-effect-transistor includes a substrate, a first...
2018/0114848 SEMICONDUCTOR DEVICE HAVING A GAP DEFINED THEREIN
A method includes forming a first spacer structure on a dummy gate of a semiconductor device and forming a sacrificial spacer on the first spacer structure....
2018/0114847 FINFET WITH REDUCED PARASITIC CAPACITENCE
A method of fabricating a finFET semiconductor device, the method including forming a self-aligned silicide contact above and in direct contact with exposed...
2018/0114846 FINFET WITH REDUCED PARASITIC CAPACITANCE
A method of fabricating a finFET semiconductor device, the method including forming a self-aligned silicide contact above and in direct contact with exposed...
2018/0114845 SEMICONDUCTOR DEVICE
A semiconductor device includes: a drain region made of a first or second conductivity type semiconductors; a drift layer made of the first conductivity type...
2018/0114844 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A structure by which electric-field concentration which might occur between a source electrode and a drain electrode in a bottom-gate thin film transistor is...
2018/0114843 SILICON CARBIDE SEMICONDUCTOR DEVICE
A silicon carbide semiconductor device includes a gate insulating film and a gate electrode. A first main surface is provided with a trench defined by a side...
2018/0114842 HIGH VOLTAGE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A high voltage semiconductor device and a manufacturing method thereof are provided in the present invention. A recess is formed in a semiconductor substrate,...
2018/0114841 POWER SEMICONDUCTOR DEVICE TERMINATION STRUCTURE
A power semiconductor device is disclosed. In one example, the device comprises: a semiconductor body comprising a drift region, the drift region having...
2018/0114840 SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREOF
A semiconductor memory device and a method of fabrication of the same are provided. The semiconductor memory device comprises a two-terminal memory cell...
2018/0114839 FIELD EFFECT TRANSISTOR USING TRANSITION METAL DICHALCOGENIDE AND A METHOD FOR MANUFACTURING THE SAME
A field effect transistor (FET) includes a gate dielectric layer, a two-dimensional (2D) channel layer formed on the gate dielectric layer and a gate...
2018/0114838 SEMICONDUCTOR DEVICE
A high-performance and highly reliable semiconductor device is provided. The semiconductor device includes: a first oxide; a source electrode; a drain...
2018/0114837 TUNNEL BARRIER SCHOTTKY
A diode includes: a semiconductor substrate; a cathode metal layer contacting a bottom of the substrate; a semiconductor drift layer on the substrate; a graded...
2018/0114836 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A semiconductor device includes a silicon carbide semiconductor substrate, a first silicon carbide layer of a first conductivity type, a first semiconductor...
2018/0114835 Doped Diamond SemiConductor and Method of Manufacture
A doped diamond semiconductor and method of production using a laser is disclosed herein. As disclosed, a dopant and/or a diamond or sapphire seed material may...
2018/0114834 NANOSHEET TRANSISTORS WITH SHARP JUNCTIONS
A method of forming a semiconductor device and resulting structures having nanosheet transistors with sharp junctions by forming a nanosheet stack over a...
2018/0114833 MULTIPLE-THRESHOLD NANOSHEET TRANSISTORS
Semiconductor devices and methods of making the same include forming a stack of alternating layers of channel material and sacrificial material. The...
2018/0114832 SEMICONDUCTOR DEVICE
A first parallel pn layer having a first n-type region and a first p-type region junctioned alternately and repeatedly is disposed in an element active...
2018/0114831 LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREFOR
A laterally diffused metal oxide semiconductor field-effect transistor, comprising a substrate (110), a source electrode (150), a drain electrode (140), a body...
2018/0114830 High Voltage Termination Structure of a Power Semiconductor Device
A power semiconductor device includes a semiconductor body coupled to first and second load terminals and including a drift region with dopants of a first...
2018/0114829 Semiconductor Device
A semiconductor device includes a semiconductor substrate configured such that a trench is provided on a surface of the semiconductor substrate at a position...
2018/0114828 FinFET Resistor And Method To Fabricate Same
A method includes providing a semiconductor substrate having a plurality of linear semiconductor fin structures spaced apart from one another on a surface of...
2018/0114827 PRECISE/DESIGNABLE FINFET RESISTOR STRUCTURE
A resistive material is formed straddling over each semiconductor fin that extends upward from a surface of a substrate. The resistive material is then...
2018/0114826 FINFET RESISTOR AND METHOD TO FABRICATE SAME
A method includes providing a semiconductor substrate having a plurality of linear semiconductor fin structures spaced apart from one another on a surface of...
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