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Patent # Description
2018/0122956 THICK FDSOI SOURCE-DRAIN IMPROVEMENT
A method of forming a semiconductor device is disclosed including providing a semiconductor-on-insulator substrate comprising a semiconductor bulk substrate, a...
2018/0122955 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
A semiconductor device includes at least one thin film transistor (100, 200), the at least one thin film transistor including a semiconductor layer (3A, 3B)...
2018/0122954 THIN FILM TRANSISTOR AND DISPLAY SUBSTRATE HAVING THE SAME
A display substrate including a base substrate, a first thin film transistor disposed on the base substrate and including a first gate electrode and a first...
2018/0122953 LAMINATE STRUCTURE OF THIN FILM TRANSISTOR
A laminate structure of a thin film transistor includes a thin film transistor array and a passivation layer. The thin film transistor array includes a gate, a...
2018/0122952 FINFET TRANSISTOR GATE AND EPITAXY FORMATION
Embodiments are directed to a method of forming a semiconductor device and resulting structures that reduce shallow trench isolation (STI) undercutting,...
2018/0122951 SEMICONDUCTOR DEVICE
An object is to stabilize electric characteristics of a semiconductor device including an oxide semiconductor to increase reliability. The semiconductor device...
2018/0122949 BOTTOM-GATE TRANSISTOR FORMED IN SURFACE RECESS
A bottom-gate transistor has a channel in a recess of a substrate surface. A gate electrode is disposed in and in contact with the recess. A dielectric...
2018/0122948 METHOD TO IMPROVE FINFET DEVICE PERFORMANCE
A method for manufacturing a semiconductor device includes providing a substrate structure having PMOS and NMOS regions. The PMOS region includes a first...
2018/0122946 Semiconductor Devices and FinFETS
Semiconductor devices and fin field effect transistors (FinFETs) are disclosed. In some embodiments, a representative semiconductor device includes a group III...
2018/0122945 METHOD OF FABRICATING AIR-GAP SPACER FOR N7/N5 FINFET AND BEYOND
Embodiments disclosed herein relate to an improved transistor with reduced parasitic capacitance. In one embodiment, the transistor device includes a...
2018/0122944 DIELECTRIC ISOLATED FIN WITH IMPROVED FIN PROFILE
A method of forming a fin structure that includes forming a plurality of fin structures from a bulk semiconductor substrate and forming a dielectric spacer on...
2018/0122943 Memory Device Comprising an Electrically Floating Body Transistor and Methods of Using
A semiconductor memory cell comprising an electrically floating body having two stable states is disclosed. A method of operating the memory cell is disclosed.
2018/0122942 FDSOI LDMOS Semiconductor Device
Semiconductor devices are provided that use both silicon on insulator region and bulk region of a fully depleted silicon on insulator (FDSOI) device. For...
2018/0122939 SEMICONDUCTOR DEVICE
A semiconductor device in chip size package includes first and second metal oxide semiconductor transistors both vertical transistors formed in first and...
2018/0122938 FABRICATION OF A PAIR OF VERTICAL FIN FIELD EFFECT TRANSISTORS HAVING A MERGED TOP SOURCE/DRAIN
A method of fabricating a vertical fin field effect transistor with a merged top source/drain, including, forming a source/drain layer at the surface of a...
2018/0122935 Methods of Manufacturing a Semiconductor Device with a Buried Doped Region and a Contact Structure
A method of manufacturing a semiconductor device includes: forming a doped region in a semiconductor substrate at a first distance to a main surface plane of...
2018/0122932 THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE
The present disclosure provides a TFT, a manufacturing method thereof, an array substrate and a display device. The TFT includes an N-type metal oxide TFT and...
2018/0122931 Semiconductor Device and Transistor Cell Having a Diode Region
According to an embodiment of a semiconductor device, the device includes a semiconductor body with a drift region and neighboring device cells integrated in...
2018/0122930 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
There is improved performance of a semiconductor device including a fin-type low-withstand-voltage transistor and a fin-type high-withstand-voltage transistor....
2018/0122925 SUPERLATTICE LATERAL BIPOLAR JUNCTION TRANSISTOR
A bipolar junction transistor includes an intrinsic base formed on a substrate. The intrinsic base includes a superlattice stack including a plurality of...
2018/0122916 NANOLAMINATE STRUCTURE, SEMICONDUCTOR DEVICE AND METHOD OF FORMING NANOLAMINATE STRUCTURE
The present disclosure provides a method of forming a nanolaminate structure. First, a pre-treatment is performed on a semiconductor substrate, in which the...
2018/0122915 METHOD AND STRUCTURE FOR FORMING MOSFET WITH REDUCED PARASITIC CAPACITANCE
A method (and structure) of fabricating an MOSFET (metal-oxide-semiconductor field-effect transistor), includes, on a gate structure coated with a high-k...
2018/0122914 THIN-FILM TRANSISTOR (TFT) ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE
A method of manufacturing a thin-film transistor (TFT) array substrate, including: forming a gate layer, a gate insulating layer, an oxide semiconductor layer,...
2018/0122910 HIGH QUALITY VANADIUM DIOXIDE FILMS
Layers of high quality VO.sub.2 and methods of fabricating the layers of VO.sub.2 are provided. The layers are composed of a plurality of connected crystalline...
2018/0122908 SILICON GERMANIUM ALLOY FIN WITH MULTIPLE THRESHOLD VOLTAGES
A semiconductor structure is provided that includes a strained silicon germanium alloy fin structure and a relaxed silicon germanium alloy fin structure...
2018/0122902 Techniques for Forming FINFET Transistors with Same Fin Pitch and Different Source/Drain Epitaxy Configurations
In one aspect, a method of forming a finFET device includes: partially forming fins in first/second regions of a substrate; selectively forming spacers on...
2018/0122900 INNER SPACER FOR NANOSHEET TRANSISTORS
Embodiments are directed to a method of fabricating inner spacers of a nanosheet FET. The method includes forming sacrificial and channel nanosheets over a...
2018/0122899 PREVENTING THRESHOLD VOLTAGE VARIABILITY IN STACKED NANOSHEETS
Embodiments are directed to a method of forming a stacked nanosheet and resulting structures having equal thickness work function metal layers. A nanosheet...
2018/0122895 Method of Manufacturing Semiconductor Devices and Semiconductor Device Containing Hydrogen-Related Donors
Crystal lattice defects are generated in a horizontal surface portion of a semiconductor substrate and hydrogen-related donors are formed in the surface...
2018/0122892 BEOL Capacitor Through Airgap Metallization
A backend-of-the-line (BEOL) semiconductor capacitor made by method, apparatus, or computer program product, through an airgap metallization process,...
2018/0122891 SEMICONDUCTOR DEVICE RESISTOR STRUCTURE
A resistor body is separated from a doped well in a substrate by a resistor dielectric material layer. The doped well is defined by at least one doped region...
2018/0122889 DISPLAY DEVICE INCLUDING A DISPLAY MODULE
A display device includes a base substrate having a display area and a non-display area. The non-display area has an opening. A circuit is disposed on the base...
2018/0122886 Organic Light Emitting Display Device and Method of Manufacturing the Same
Disclosed are an organic light emitting display device which may implement high resolution and a method of manufacturing the same. A storage capacitor disposed...
2018/0122884 SEMICONDUCTOR DEVICE
Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a...
2018/0122882 ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
Disclosed are an organic light-emitting display device and a method of manufacturing the same. In the organic light-emitting display device, a first protrusion...
2018/0122880 DISPLAY SUBSTRATE AND DISPLAY APPARATUS INCLUDING THE SAME
A display substrate includes a data line extending in a first direction, a first transistor including a first channel area overlapping the data line and a...
2018/0122875 ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
An organic light-emitting display device and a method of manufacturing the same are provided. An organic light-emitting display device includes: first...
2018/0122874 ORGANIC LIGHT-EMITTING DISPLAY DEVICE
Disclosed is an organic light-emitting display device having a micro lens array (MLA) structure applied to a display panel in order to improve light extraction...
2018/0122873 LIGHT EMITTING DEVICE INCLUDING TANDEM STRUCTURE
A light emitting device comprising: a pair of electrodes; two or more light emitting elements disposed between the electrodes in a stacked arrangement, wherein...
2018/0122872 TEMPERATURE SENSOR, METHOD FOR MANUFACTURING TEMPERATURE SENSOR, AND DISPLAY DEVICE TO WHICH TEMPERATURE SENSOR...
There are disclosed a temperature sensor and a method for manufacturing the same. The temperature sensor comprises; a sensor unit including an organic light...
2018/0122870 ORGANIC LIGHT-EMITTING DEVICE AND ORGANIC LIGHT-EMITTING DISPLAY DEVICE USING THE SAME
An organic light-emitting device, including: a substrate including a blue sub-pixel, a green sub-pixel, and a red sub-pixel, each blue sub-pixel, green...
2018/0122869 Display Panel
A display panel is disclosed. The display panel comprises an excitation light emitting unit, a wavelength conversion unit which contains quantum dots, and a...
2018/0122868 ORGANIC LIGHT EMITTING DISPLAY DEVICE
An organic light emitting display device includes a substrate; first and second organic light emitting diodes laterally shifted with respect to each other on...
2018/0122867 In-Cell Touch Organic Light-Emitting Display Device
Disclosed is an organic light-emitting display device that has improved color viewing angle characteristics while including a mesh pattern. The organic...
2018/0122864 ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
An organic light-emitting display device and a method of manufacturing the same are provided. An organic light-emitting display device includes: a substrate; a...
2018/0122861 Display Device Having Eitting Areas
A display device including emitting areas is provided. The emitting areas of the display device may realize a different color each other. The display device...
2018/0122859 Arrays Of Memory Cells And Methods Of Forming An Array Of Memory Cells
An array of memory cells includes buried access lines having conductively doped semiconductor material. Pillars extend elevationally outward of and are spaced...
2018/0122857 MEMORY ELEMENT WITH A REACTIVE METAL LAYER
A re-writeable non-volatile memory device including a re-writeable non-volatile two-terminal memory element (ME) having tantalum. The ME including a first...
2018/0122856 Nonvolatile Resistive Memory Device and Manufacturing Method Thereof
A nonvolatile resistive switching memory comprising an insulating substrate, a lower electrode, a lower graphene barrier layer, a resistive switching...
2018/0122854 ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME
This technology provides an electronic device. An electronic device in accordance with an implementation of this document may include a semiconductor memory...
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