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Patent # Description
2018/0130942 PIEZOELECTRIC FILM AND METHOD FOR MANUFACTURING SAME
Provided is a piezoelectric film having a perovskite type crystal structure represented by the following Formula (P), in which a piezoelectric constant...
2018/0130941 VIBRATING DEVICE AND TACTILE SENSE PRESENTING DEVICE
A tactile sense presenting device that includes a control unit, a driving unit, and a vibrating device. The vibrating device includes a diaphragm, a...
2018/0130940 Driver for a High Voltage Capacitive Actuator
A driver for a circuit with a capacitive load, is disclosed, including an input stage, a bi-directional power converter, and a controller to control the...
2018/0130939 Vibration sensor with integrated temperature detection
A vibration sensor with a diaphragm that can be set into vibration, a piezo-electric drive for setting the diaphragm into vibration and for detecting...
2018/0130938 THERMOELECTRIC CONVERSION MODULE, METHOD FOR PRODUCING SAME, THERMOELECTRIC POWER GENERATION SYSTEM, AND METHOD...
In a known method in which a cooling pipe that is fixed and rigid is used, variation in a distance from the center of an exhaust heat pipe to the outer surface...
2018/0130937 ELECTRONIC MODULE AND METHOD FOR MANUFACTURING THE SAME, AND THERMOELECTRIC DEVICE INCLUDING THE SAME
An electronic module includes a first base layer and at least one via. The first base layer has a first surface and a second surface opposite the first...
2018/0130936 High-Performance Terbium-Based Thermoelectric Materials
A thermoelectric material, having a formula Tb.sub.xM1.sub.y-xM2.sub.zO.sub.w where M1 is one of Ca, Mg, Sr, Ba and Ra, M2 is at least one of Co, Fe, Ni, and...
2018/0130935 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A method of manufacturing a semiconductor device includes disposing a substrate metal film on an upper surface of a substrate made of a metal; disposing a...
2018/0130934 LIGHT EMITTING PACKAGE
A light emitting device may include a substrate; a body which is disposed on the substrate and has a first hole having a predetermined size and a light...
2018/0130933 LIGHT-EMITTING DEVICE
This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting diode, a pad electrically connected to the active layer,...
2018/0130932 SEMICONDUCTOR LIGHT EMITTING DEVICE
A semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a...
2018/0130931 LIGHT-EMITTING DEVICE AND METHOD OF PREPARING SAME, OPTICAL SEMICONDUCTOR ELEMENT MOUNTING PACKAGE, AND OPTICAL...
An optical semiconductor element mounting package that has good adhesion between the resin molding and the lead electrodes and has excellent reliability is...
2018/0130930 SEMICONDUCTOR LIGHT EMITTING DEVICE
To improve light emission efficiency and suppress color unevenness on a light emitting surface. Provided is a semiconductor light emitting device including a...
2018/0130929 DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME
Provided are display device and method for fabricating the same. According to an aspect of the present disclosure, there is provided a display device...
2018/0130928 ENHANCED COLOR-PREFERENCE LED LIGHT SOURCES USING YAG, NITRIDE, AND PFS PHOSPHORS
Aspects of the present disclosure are directed to a composite light source which includes at least one blue light source having peak wavelength in the range of...
2018/0130927 COMPONENT HAVING A TRANSPARENT CONDUCTIVE NITRIDE LAYER
The invention relates to a component having a transparent conductive nitride layer, characterized by a layer in the AlGaInN system and a doping with a flat...
2018/0130926 LIGHT EMITTING DIODE
An LED includes a first-type semiconductor layer, a light emitting layer, a second-type semiconductor layer, a first metal layer, a first current conducting...
2018/0130925 OPTOELECTRONIC SEMICONDUCTOR DEVICE, METHOD OF PRODUCING AN ELECTRICAL CONTACT AND METHOD OF PRODUCING A...
An optoelectronic semiconductor device includes a semiconductor body having a semiconductor region and an active region, wherein the semiconductor region has a...
2018/0130924 Light-emitting device and manufacturing method thereof
A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer and an active layer formed...
2018/0130922 MONOCRYSTAL AND POLYCRYSTAL TEXTURING METHOD
A monocrystal and polycrystal texturing method, includes: 1: placing a silicon wafer in an acid liquid, where the acid liquid reacts with the surface of the...
2018/0130921 SYSTEM AND METHODS FOR ACHIEVING A MICRO LOUVER EFFECT IN A PHOTOVOLTAIC CELL
Building integrated photovoltaic (BIPV) systems provide for solar panel arrays that can be aesthetically pleasing and appear seamless to an observer. Micro...
2018/0130920 SOLAR CELL HAVING A PLURALITY OF SUB-CELLS COUPLED BY A METALLIZATION STRUCTURE
Solar cells having a plurality of sub-cells coupled by metallization structures, and singulation approaches to forming solar cells having a plurality of...
2018/0130919 SOLAR CELL PANEL AND BACK SHEET FOR THE SAME
Disclosed is a solar cell panel including a bi-facial solar cell; a front portion positioned on a front surface of the bi-facial solar cell; and a rear portion...
2018/0130918 METHOD AND DEVICE FOR IMPROVING POWER GENERATION EFFICIENCY OF SOLAR CELL ON UNIT ERECTED AREA
The present invention provides a method for improving power generation efficiency of solar cell on unit erected area, comprising: providing a base solar cell...
2018/0130917 Configurations for Solar Cells, Solar Panels, and Solar Panel Systems
Embodiments of the disclosure are generally related to solar panel configurations. In some embodiments, the active surface area of the solar panel is increased...
2018/0130916 ELECTRIC POWER TRANSFER SYSTEM USING OPTICAL POWER TRANSFER
An apparatus and method for optical-power-transfer (OPT). A light source converts electrical energy into light, and the light is transmitted from the active...
2018/0130915 AIRSHIP WITH A RADIO FREQUENCY TRANSPARENT PHOTOVOLTAIC CELL
A radio frequency transparent photovoltaic cell includes a back contact layer formed of an electrically conductive material, at least one aperture formed in...
2018/0130914 GRADED-INDEX STRUCTURE FOR OPTICAL SYSTEMS
An optical system and photo sensor pixel are provided. The photo sensor pixel includes a substrate including an active region and a peripheral region that is...
2018/0130913 Semiconductor Film and Semiconductor Element
The present invention relates to an application liquid for forming a semiconductor film, the application liquid comprising: an inorganic semiconductor...
2018/0130912 FIELD EFFECT TRANSISTOR INCLUDING GRAPHENE LAYER
A field effect transistor (FET) including a graphene layer as a carrier transporting channel is disclosed. The FET provides, on a substrate, a graphene layer,...
2018/0130911 DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME
It is an object of the present invention to provide a method for manufacturing a display device in which unevenness generated under a light-emitting element...
2018/0130910 THIN-FILM TRANSISTOR SUBSTRATE
A thin-film transistor (TFT) substrate is provided which includes: a substrate; a TFT disposed above the substrate; and a capacitor disposed above the...
2018/0130909 FERROELECTRIC DEVICE AND METHOD FOR MANUFACTURING SAME
A ferroelectric device and a manufacturing method are provided. While holding a nonvolatile memory retention capability and a multiple rewriting endurance as...
2018/0130908 THIN FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY APPARATUS HAVING THE SAME
A thin film transistor substrate includes a thin film transistor including a gate electrode, a semiconductor layer, a source electrode and a drain electrode....
2018/0130907 SEMICONDUCTOR SUBSTRATE STRUCTURES, SEMICONDUCTOR DEVICES AND METHODS FOR FORMING THE SAME
A semiconductor substrate structure includes a substrate having a first conductivity type, an oxide layer disposed on the substrate, and a semiconductor layer...
2018/0130906 FIELD EFFECT TRANSISTOR DEVICE WITH SEPARATE SOURCE AND BODY CONTACTS AND METHOD OF PRODUCING THE DEVICE
The field effect transistor device comprises a substrate (1) of semiconductor material, a body well of a first type of electric conductivity in the substrate,...
2018/0130905 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes first and second gate stack structures formed in...
2018/0130904 POWER MOSFETS AND METHODS FOR MANUFACTURING THE SAME
A semiconductor device and the method of manufacturing the same are provided. The semiconductor device comprises a substrate, a source region, a drain region,...
2018/0130903 SEMICONDUCTOR DEVICE ISOLATION WITH RESURF LAYER ARRANGEMENT
A device includes a semiconductor substrate, a doped isolation barrier disposed in the semiconductor substrate, a body region disposed in the semiconductor...
2018/0130902 VERTICAL TRANSISTOR USING A THROUGH SILICON VIA GATE
A vertical transistor is described that uses a through silicon via as a gate. In one example, the structure includes a substrate, a via in the substrate, the...
2018/0130901 ANALOG FLOATING-GATE ATMOMETER
An atmometer system based on an analog floating-gate structure and circuit. The floating-gate circuit includes a floating-gate electrode that serves as a gate...
2018/0130900 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
To provide a semiconductor device having a substrate contact in a deep trench thereof and having an improved characteristic. A PVD-metal film (metal film...
2018/0130899 METHOD TO FORM AIR-GAP SPACERS AND AIR-GAP SPACER-CONTAINING STRUCTURES
A device includes an air-gap (i.e., air-gap spacer) formed in situ during the selective, non-conformal deposition of a conductive material. The air-gap is...
2018/0130898 Ruggedized Symmetrically Bidirectional Bipolar Power Transistor
The present application teaches, among other innovations, power semiconductor devices in which breakdown initiation regions, on BOTH sides of a die, are...
2018/0130897 PROCESS FOR FORMING HOMOEPITAXIAL TUNNEL BARRIERS WITH HYDROGENATED GRAPHENE-ON-GRAPHENE FOR ROOM TEMPERATURE...
A homoepitaxial, ultrathin tunnel barrier-based electronic device in which the tunnel barrier and transport channel are made of the same material--graphene.
2018/0130896 Semiconductor Strips with Undercuts and Methods for Forming the Same
An integrated circuit device includes a semiconductor substrate, and a semiconductor strip extending into the semiconductor substrate. A first and a second...
2018/0130895 METHODS OF FORMING GATE ELECTRODES ON A VERTICAL TRANSISTOR DEVICE
One illustrative method of forming a vertical transistor device disclosed herein includes, among other things, forming bottom source/drain (S/D) regions. A...
2018/0130894 SEMICONDUCTOR STRUCTURES HAVING INCREASED CHANNEL STRAIN USING FIN RELEASE IN GATE REGIONS
A method of introducing strain in a channel region of a FinFET device includes forming a fin structure on a substrate, the fin structure having a lower portion...
2018/0130893 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
Semiconductor devices and fabrication methods thereof are provided. An exemplary semiconductor device includes a base substrate; a gate structure group, having...
2018/0130892 SPATIALLY DECOUPLED FLOATING GATE SEMICONDUCTOR DEVICE
A method includes forming a tunneling dielectric layer on a semiconductor substrate, a first portion of the tunneling dielectric layer is directly above a...
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