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Patent # Description
2018/0130891 GATE STRUCTURES
The present disclosure generally relates to semiconductor structures and, more particularly, to gate structures with minimized gate thickness loss and methods...
2018/0130890 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
A semiconductor device including a first fin protruding on a substrate and extending in a first direction; a first gate electrode on the first fin, the first...
2018/0130889 SELF-ALIGNED CONTACT PROTECTION USING REINFORCED GATE CAP AND SPACER PORTIONS
A method includes providing a starting structure, the starting structure including a semiconductor substrate, sources and drains, a hard mask liner layer over...
2018/0130888 FIELD EFFECT TRANSISTOR HAVING STAGGERED FIELD EFFECT TRANSISTOR CELLS
A Field Effect Transistor (FET) having a substrate; a plurality of active regions disposed on the substrate; and a laterally extending finger-like control...
2018/0130887 Electrode Structure of a Transistor, and Pixel Structure and Display Apparatus Comprising the Same
An electrode structure of a transistor, and a pixel structure and a display apparatus comprising the electrode structure of the transistor are disclosed. The...
2018/0130886 SEMICONDUCTOR DEVICE
A semiconductor device includes: a substrate having an active region; a gate structure disposed in the active region; source/drain regions respectively formed...
2018/0130885 DEVICE ISOLATION USING PREFERENTIAL OXIDATION OF THE BULK SUBSTRATE
A method includes providing a structure including a substrate, a buffer layer formed on the substrate and a semiconductor layer formed on the buffer layer,...
2018/0130884 DEVICE ISOLATION USING PREFERENTIAL OXIDATION OF THE BULK SUBSTRATE
A structure includes a semiconductor substrate, a semiconductor buffer layer disposed on the semiconductor substrate, an oxide layer disposed on the buffer...
2018/0130883 Scandium-Containing III-N Etch-Stop Layers for Selective Etching of III-Nitrides and Related Materials
A semiconductor device structure including a scandium (Sc)- or yttrium (Y)-containing material layer situated between a substrate and one or more overlying...
2018/0130882 GRAPHENE FET WITH GRAPHITIC INTERFACE LAYER AT CONTACTS
A method for forming a graphene FET includes providing a graphene layer having a surface. A first metal layer having a work function <4.3 eV is deposited on...
2018/0130881 INTEGRATED CIRCUIT COMPRISING COMPONENTS, FOR EXAMPLE NMOS TRANSISTORS, HAVING ACTIVE REGIONS WITH RELAXED...
An integrated circuit includes a substrate and at least one component unfavorably sensitive to compressive stress which is arranged at least partially within...
2018/0130880 NANOTUBE TERMINATION STRUCTURE FOR POWER SEMICONDUCTOR DEVICES
Semiconductor devices are formed using a thin epitaxial layer (nanotube) formed on sidewalls of dielectric-filled trenches. In one embodiment, a termination...
2018/0130879 Integrated Cylindrical Power Cell Module and Manufacturing Method Thereof
The present invention relates to an integrated cylindrical power cell module and a manufacturing method thereof, and belongs to the field of power cells. The...
2018/0130878 NANOSTRUCTURE FIELD-EFFECT TRANSISTORS WITH ENHANCED MOBILITY SOURCE/DRAIN REGIONS
Structures and fabrication methods for vertical-transport field-effect transistors. A nanostructure, a gate structure coupled with the nanostructure, and a...
2018/0130877 LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREFOR
Provided are a laterally diffused metal oxide semiconductor field-effect transistor and a manufacturing method therefor. The method comprises: providing a...
2018/0130876 INTEGRATED RF FRONT END SYSTEM
Systems and methods are disclosed for integrating functional components of front-end modules for wireless radios. Front-end modules disclosed may be dual-band...
2018/0130875 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
A semiconductor device includes a drift layer formed of a first conductive type semiconductor material, a MOSFET part including a p-type base layer provided on...
2018/0130874 SEMICONDUCTOR DEVICE
A semiconductor device includes a semiconductor layer of a first conductivity type, an impurity region of a second conductivity type formed in a surface layer...
2018/0130873 SEMICONDUCTOR DEVICE
In a semiconductor device, an AlGaN layer includes a first AlGaN layer and a second AlGaN layer. The second AlGaN layer is positioned between a gate structure...
2018/0130872 SIC SINGLE CRYSTAL SEED, SIC INGOT, SIC SINGLE CRYSTAL SEED PRODUCTION METHOD, AND SIC SINGLE CRYSTAL INGOT...
A SiC single crystal seed of the present invention has a main surface with an offset angle of at least 2.degree. but not more than 20.degree. relative to the...
2018/0130871 CAPACITOR STRUCTURE AND MANUFACTURING METHOD THEREOF
The present invention provides a capacitor structure, including a bottom plate and a top plate, wherein the top plate has a first sidewall, and wherein an area...
2018/0130870 INTEGRATED CAPACITOR WITH SIDEWALL HAVING REDUCED ROUGHNESS
A method of forming an integrated capacitor on a semiconductor surface on a substrate includes etching a capacitor dielectric layer including at least one...
2018/0130869 INTEGRATED TRENCH CAPACITOR WITH TOP PLATE HAVING REDUCED VOIDS
A method for forming trench capacitors includes forming a silicon nitride layer over a first region of a semiconductor surface doped a first type and over a...
2018/0130868 HIGH BREAKDOWN VOLTAGE PASSIVE ELEMENT AND HIGH BREAKDOWN VOLTAGE PASSIVE ELEMENT MANUFACTURING METHOD
Warping of a semiconductor wafer occurring due to a difference in the thermal expansion rates of an insulating film and the semiconductor wafer is restricted....
2018/0130867 MAGNETIC ISOLATORS FOR INCREASED VOLTAGE OPERATIONS AND RELATED METHODS
A magnetic isolator is described. The magnetic isolator may comprise a top conductive coil, a bottom conductive coil, and a dielectric layer separating the top...
2018/0130866 ORGANIC LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD THEREOF
An organic light emitting diode (OLED) display includes: a substrate; a scan line on the substrate, extending in a first direction, and configured to transmit...
2018/0130865 ORGANIC LIGHT EMITTING DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME
An organic light emitting display panel includes a first base substrate, a thin film transistor disposed on the first base substrate, a first electrode...
2018/0130864 MULTIPLE SUBTHRESHOLD SWING CIRCUIT AND APPLICATION TO DISPLAYS AND SENSORS
An apparatus includes a junction field-effect transistor (JFET) and a set of one or more serially-connected diodes. The JFET includes a first layer including...
2018/0130863 LIGHT-EMITTING DEVICE AND DISPLAY DEVICE
Although an organic resin substrate is highly effective at reducing the weight and improving the shock resistance of a display device, it is required to...
2018/0130862 FLEXIBLE ORGANIC ELECTROLUMINESCENT DEVICE AND METHOD FOR FABRICATING THE SAME
Provided is a flexible organic electroluminescent device and a method for fabricating the same. In the flexible electroluminescent device, line hole patterns...
2018/0130861 Semiconductor Device, Input/Output Device, and Electronic Appliance
A flexible input/output device and an input/output device having high resistance to repeated bending are provided. The input/output device includes a first...
2018/0130860 METHOD FOR FABRICATING COA ARRAY SUBSTRATE, ARRAY SUBSTRATE AND DISPLAY DEVICE
A method for fabricating a COA array substrate, an array substrate and a display device are provided. The COA array substrate includes a photoresist layer...
2018/0130859 DISPLAY DEVICE
The purpose of the present invention is to realize a reliable bendable organic EL display device with high reliability. The structure of the invention is as...
2018/0130858 DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME
An organic light emitting display panel including a first electrode, a second electrode on the first electrode, an organic layer between the first electrode...
2018/0130857 FINGERPRINT SENSOR, DISPLAY DEVICE, AND METHOD OF MANUFACTURING DISPLAY DEVICE
A display device includes a display pixel and a sensor pixel. The display pixel includes a light-emitting element including a first pixel electrode. The...
2018/0130856 DISPLAY DEVICE
A display device includes a substrate including a display area and a non-display area, a pixel unit provided in the display area, and including a first pixel...
2018/0130855 Light-Emitting Device, Electronic Device, and Lighting Device
A light-emitting device, an electronic device, or a lighting device with low power consumption and high reliability is provided. The light-emitting device...
2018/0130854 DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
A display substrate includes a first switching element electrically connected to a gate line extending in a first direction and a data line extending in a...
2018/0130853 DISPLAY COMPONENT AND MANUFACTURING METHOD THEREFOR
A display device and a preparation method thereof are disclosed, The display device comprises red, green and blue sub-pixels, wherein each sub-pixel is an...
2018/0130852 ARRAY SUBSTRATE, DISPLAY DEVICE HAVING THE SAME, AND MANUFACTURING METHOD THEREOF
The present application discloses an array substrate. The array substrate includes a sub-pixel having a first light emitting area and a second light emitting...
2018/0130851 METHOD FOR MANUFACTURING TOUCHSCREEN DISPLAY
A method for manufacturing a touchscreen display includes: forming an OLED display layer on a display substrate; forming a touch layer on an encapsulation...
2018/0130850 MULTI-LAYERED CONDUCTIVE METAL OXIDE STRUCTURES AND METHODS FOR FACILITATING ENHANCED PERFORMANCE...
A memory cell including a two-terminal re-writeable non-volatile memory element having at least two layers of conductive metal oxide (CMO), which, in turn, can...
2018/0130849 INTEGRATED CIRCUIT WITH HALL EFFECT AND ANISOTROPIC MAGNETORESISTIVE (AMR) SENSORS
Disclosed examples provide wafer-level integration of magnetoresistive sensors and Hall-effect sensors in a single integrated circuit, in which one or more...
2018/0130848 IMAGING DEVICE AND ELECTRONIC APPARATUS
There is provided an imaging device that includes photovoltaic type pixels that have photoelectric conversion regions generating photovoltaic power for each...
2018/0130847 SOLID-STATE IMAGING DEVICE AND IMAGING SYSTEM
A solid-state imaging device includes: a first semiconductor substrate including a photoelectric conversion element; and a second semiconductor substrate...
2018/0130846 SEMICONDUCTOR DEVICE
Provided is a semiconductor device including: a first substrate having a first primary surface, a second primary surface, and a side surface; a semiconductor...
2018/0130844 PHOTO SENSOR AND DISPLAY DEVICE HAVING THE SAME
Disclosed herein is a photo sensor comprising a first thin film transistor (TFT) configured to convert light energy to electric energy; a storage capacitor...
2018/0130843 IMAGE SENSOR FOR HIGH PHOTOELECTRIC CONVERSION EFFICIENCY AND LOW DARK CURRENT
Example embodiments relate to an image sensor configured to achieve a high photoelectric conversion efficiency and a low dark current. The image sensor...
2018/0130842 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR-DEVICE MANUFACTURING METHOD
It is possible to reduce resistance variations of a member connecting a through-silicon via to a line and improve wiring reliability. A hole through which the...
2018/0130841 IMAGING COMPONENT AND IMAGING MODULE PROVIDED WITH SAME
An imaging component includes a laminated substrate formed of a resin material; a plurality of electrode pads disposed on an upper face of the laminated...
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