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Patent # Description
2018/0138412 DISPLAY DEVICE AND METHOD OF INSPECTING THE SAME
A display device includes a sensing line and a data driver. The sensing line is in a display panel. The data driver includes a plurality of integrated...
2018/0138411 PIXEL DEFINE LAYER AND MANUFACTURING METHOD THEREOF AND RELATED LIGHT EMITTING DISPLAY
A pixel define layer and manufacturing method thereof and the related light emitting display are disclosed. The pixel define layer is arranged on a conductive...
2018/0138410 METAL MASK BASE, METAL MASK AND METHOD FOR PRODUCING METAL MASK
A metal mask substrate includes a metal obverse surface configured such that a resist is placed on the obverse surface. The obverse surface has a ...
2018/0138409 MASK FRAME ASSEMBLY FOR THIN LAYER DEPOSITION
A mask frame assembly manufactured via an extension-welding process on a stage, the mask frame assembly includes: a mask frame disposed on a stage, the mask...
2018/0138408 A SHADOW MASK FOR ORGANIC LIGHT EMITTING DIODE MANUFACTURE
A shadow mask (200) includes a frame (210) made of a metallic material, and one or more mask patterns (205) coupled to the frame (210), the one or more mask...
2018/0138407 FOUR-COORDINATE BORON COMPOUNDS
A compound having a four-coordinate boron atom to which is connected a first C.sub.3-C.sub.25 substituent, a second C.sub.3-C.sub.25 substituent and a bridging...
2018/0138406 DUAL RESISTIVE-MATERIAL REGIONS FOR PHASE CHANGE MEMORY DEVICES
In various examples, dual resistive-material regions for a phase change material region are fabricated by initially forming a resistive material. Prior to...
2018/0138405 METHOD FOR REDUCING THE WET ETCH RATE OF A SIN FILM WITHOUT DAMAGING THE UNDERLYING SUBSTRATE
Methods and apparatuses for forming conformal, low wet etch rate silicon nitride films having low hydrogen content using atomic layer deposition are described...
2018/0138404 METHODS OF OPERATING MEMORY DEVICES AND ELECTRONIC SYSTEMS
Memory devices having memory cells comprising variable resistance material include an electrode comprising a single nanowire. Various methods may be used to...
2018/0138403 Logic Compatible RRAM Structure and Process
A memory cell and method including a first electrode formed through a first opening in a first dielectric layer, a resistive layer formed on the first...
2018/0138402 HIGH YIELD RRAM CELL WITH OPTIMIZED FILM SCHEME
The present disclosure, in some embodiments, relates to a resistive random access memory (RRAM) cell. The RRAM cell has a bottom electrode disposed over a...
2018/0138401 MULTIVALENT OXIDE CAP FOR ANALOG SWITCHING RESISTIVE MEMORY
A memory includes a base oxide provided between a first electrode and a second electrode, and a multivalent oxide provided between the first electrode and the...
2018/0138400 CONDUCTIVE HARD MASK FOR MEMORY DEVICE FORMATION
Methods, systems, and devices for memory arrays that use a conductive hard mask during formation and, in some cases, operation are described. A hard mask may...
2018/0138399 PHASE CHANGE MEMORY CELL WITH CONSTRICTION STRUCTURE
Some embodiments include methods of forming memory cells. Such methods can include forming a first electrode, a second electrode, and a memory element directly...
2018/0138398 PHASE CHANGE MEMORY CELL WITH CONSTRICTION STRUCTURE
Some embodiments include methods of forming memory cells. Such methods can include forming a first electrode, a second electrode, and a memory element directly...
2018/0138397 FREE LAYER, MEGNETORESISTIVE CELL, AND MEGNETORESISTIVE RANDOM ACESS MEMORY DEVICE HAVING LOW BORON...
A method of forming a magnetoresistive memory device includes forming a ferromagnetic layer, forming a tunneling barrier layer on the ferromagnetic layer,...
2018/0138396 METHOD AND APPARATUS FOR MAGNETIC DEVICE ALIGNMENT ON AN INTEGRATED CIRCUIT
Techniques are presented for ensuring alignment marks are available for use and patterning magnetoresistive devices following the deposition of layers used to...
2018/0138395 METHOD FOR PRODUCING COMPOSITE WAFER HAVING OXIDE SINGLE-CRYSTAL FILM
Provided is a composite wafer (c-wafer) having an oxide single-crystal film transferred onto a support wafer (s-wafer), the film being a lithium tantalate or...
2018/0138394 PIEZOELECTRIC ELEMENT, PIEZOELECTRIC ELEMENT APPLICATION DEVICE, AND METHOD OF MANUFACTURING PIEZOELECTRIC ELEMENT
A piezoelectric element includes a first electrode, a piezoelectric layer formed on the first electrode by a solution method and formed of a perovskite-type...
2018/0138393 PIEZOELECTRIC ELEMENT AND DEVICE INCLUDING THE SAME
A piezoelectric element includes a first and a second electrode, a piezoelectric layer between the first electrode and the second electrode, and an orientation...
2018/0138392 PIEZOELECTRIC ELEMENT AND PIEZOELECTRIC ELEMENT APPLICATION DEVICE
A piezoelectric element includes a first electrode; a second electrode; and a piezoelectric layer arranged between the first electrode and the second...
2018/0138391 PIEZOELECTRIC MEMS MICROPHONE
A piezoelectric MEMS microphone comprising a multi-layer sensor that includes at least one piezoelectric layer between two electrode layers, with the sensor...
2018/0138390 PIEZOELECTRIC ELEMENT
A piezoelectric element includes a plate-shaped piezoelectric body having one principal face and the other principal face which are opposite to each other; and...
2018/0138389 METHOD OF MAKING A SUPERCONDUCTOR DEVICE
A method of forming a superconductor device structure is disclosed. The method comprises forming a base electrode in a first dielectric layer, forming a...
2018/0138388 THERMOELECTRIC MATERIAL STRUCTURE
A thermoelectric material structure includes a substrate, at least one spacing layer, and at least one two-dimensional (2D) material layer. The substrate has a...
2018/0138387 TECHNIQUES FOR TRANSFERRING THERMAL ENERGY STORED IN PHASE CHANGE MATERIAL
Various embodiments are generally directed to an apparatus, method and other techniques to receive thermal energy from a source, convert phase change material...
2018/0138386 METHOD FOR MANUFACTURING THERMOELECTRIC MATERIAL HAVING HIGH EFFICIENCY AND METHOD FOR MANUFACTURING...
A method for manufacturing a thermoelectric material is provided. According to the method, a first shaped body is formed from a thermoelectric powder, of which...
2018/0138385 METHOD FOR MANUFACTURING BI-TE-BASED THERMOELECTRIC MATERIAL USING RESISTANCE-HEATING ELEMENT
The present invention relates to a method for manufacturing a Bi--Te-based thermoelectric material. More particularly, the present invention provides a novel...
2018/0138384 THERMOELECTRIC DEVICE AND THERMOELECTRIC CONVERSION UNIT
Thermoelectric device includes thermoelectric converter, first heat conductor, second heat conductor, first gap filler, and first sheet material....
2018/0138383 Systems, Methods and/or Apparatus for Thermoelectric Energy
Systems methods and/or apparatus for the conversion of various types of energy into thermal energy that may be stored and/or then converted into electrical...
2018/0138382 METHOD FOR MANUFACTURING LIGHT EMITTING DIODE PACKAGE
A method for manufacturing a light emitting diode package comprises: arranging a first solder and a second solder between a substrate and a light emitting...
2018/0138381 LIGHT-EMITTING DIODE DEVICE
A LED device includes a substrate; a plurality of LED units on the substrate, wherein each LED unit includes: a first semiconductor layer; a second...
2018/0138380 LIGHT EMITTING DEVICE
A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer...
2018/0138379 METHOD OF PRODUCING A CONNECTION SUPPORT, CONNECTION SUPPORT AND OPTOELECTRONIC SEMICONDUCTOR COMPONENT...
A method of producing at least one connection carrier includes: A) providing a carrier plate with a planar top face; B) applying at least one electrically...
2018/0138378 LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
A light-emitting device includes a substrate, a light-emitting component, a translucent layer, an adhesive layer, a reflective layer and translucent...
2018/0138377 LIGHT-EMITTING DEVICE
A light-emitting device includes a light-emitting element disposed on a mount substrate, a reflective member disposed around the light-emitting element to...
2018/0138376 ELECTRO-OPTICAL DEVICE, METHOD FOR MANUFACTURING ELECTRO-OPTICAL DEVICE, AND ELECTRONIC APPARATUS
There is provided an electro-optical device including a light-emitting layer that has a first light-emitting element and a second light-emitting element which...
2018/0138375 LIGHT-EMITTING DEVICE PACKAGE
A light-emitting device (LED) package including a package body including a mounting region at an upper portion thereof; a lead frame below the package body; a...
2018/0138374 PHOSPHOR AND METHOD OF MANUFACTURING SAME, AND LED LAMP
A phosphor has a composition represented by Chemical formula 1: 1.5Y.sub.2O.sub.3.2.5aAl.sub.2O.sub.3:Ce where a is a number satisfying 1.02<a<1.1.
2018/0138373 LIGHT EMITTING DIODE
A light emitting diode is presented, including: a first electrode; a second electrode overlapping the first electrode; an emission layer interposed between the...
2018/0138372 SEMICONDUCTOR LIGHT-EMITTING DEVICE INCLUDING A REFLECTOR LAYER HAVING A MULTI-LAYERED STRUCTURE
A semiconductor light-emitting device includes a light-emitting structure including a first semiconductor layer, an active layer, and a second semiconductor...
2018/0138371 Invisible-light Light Emitting Diode and Fabrication Method Thereof
An invisible-light light-emitting diode includes an N-type ohmic contact semiconductor layer, an N-type current spreading layer, an N--GaAs visible-light...
2018/0138370 LIGHT EMITTING ELEMENT INCLUDING ZnO TRANSPARENT ELECTRODE
An exemplary light emitting diode is provided to comprise: a first semiconductor layer; a mesa disposed on the first semiconductor layer and including an...
2018/0138369 LIGHT EMITTING DIODE STRUCTURE
A light emitting diode structure including a substrate, a semiconductor epitaxial structure, a first insulating layer, a first reflective layer, a second...
2018/0138368 LIGHT EMITTING DIODE HAVING SIDE REFLECTION LAYER
A light emitting diode including a side reflection layer. The light emitting diode includes: a semiconductor stack and a light exit surface having a roughened...
2018/0138367 Nitride Light Emitting Diode and Growth Method
A nitride light emitting diode includes a substrate and a nitride buffer layer, an n-type layer, a quantum well light emitting layer, and a p-type layer over...
2018/0138366 LIGHT-EMITTING ELEMENT
An embodiment relates to a light-emitting element capable of reducing the driving voltage and improving the optical output, comprising: a support substrate; a...
2018/0138365 P-type Contact to Semiconductor Heterostructure
A contact to a semiconductor heterostructure is described. In one embodiment, there is an n-type semiconductor contact layer. A light generating structure...
2018/0138364 Light Emitting Diode and Fabrication Method Thereof
A light-emitting diode includes a conductive mask layer planted over a substrate surface. An epitaxial laminated layer is formed over the conductive mask layer...
2018/0138363 ULTRAVIOLET LIGHT EMITTING DEVICE
A light emitting device, according to one embodiment, may comprise: a substrate; a first conductive semiconductor layer disposed on the substrate; an active...
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