Easy To Use Patents Search & Patent Lawyer Directory

At Patents you can conduct a Patent Search, File a Patent Application, find a Patent Attorney, or search available technology through our Patent Exchange. Patents are available using simple keyword or date criteria. If you are looking to hire a patent attorney, you've come to the right place. Protect your idea and hire a patent lawyer.

Searching:





Search by keyword, patent number, inventor, assignee, city or state:




Patent # Description
2018/0138311 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
The present invention provides a semiconductor device that can reduce effects of noise without complicating processes or increasing chip area. The semiconductor...
2018/0138310 SEMICONDUCTOR DEVICE WITH A GATE INSULATING FILM FORMED ON AN INNER WALL OF A TRENCH, AND METHOD OF...
A semiconductor device includes a semiconductor substrate, which includes: a drift region that has a first conductivity type; a body region that has a second...
2018/0138309 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A semiconductor device includes an active region provided in an n.sup.+-type silicon carbide substrate and through which main current flows, a termination...
2018/0138308 METHOD FOR FABRICATING A FINFET METALLIZATION ARCHITECTURE USING A SELF-ALIGNED CONTACT ETCH
A method of fabricating a FinFET device includes a self-aligned contact etch where a source/drain contact module is performed prior to a replacement metal gate...
2018/0138307 TUNNEL FINFET WITH SELF-ALIGNED GATE
Structures and methods for a tunnel field-effect transistor (TFET). The TFET includes a gate electrode, a source region having a first conductivity type, a...
2018/0138306 HIGH-ELECTRON-MOBILITY TRANSISTOR (HEMT) SEMICONDUCTOR DEVICES WITH REDUCED DYNAMIC RESISTANCE
High-electron-mobility transistor (HEMT) devices are described in this patent application. In some implementations, the HEMT devices can include a back barrier...
2018/0138305 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device comprises: a substrate; a semiconductor layer on the substrate; and a gallium nitride cap layer on the semiconductor layer. The gallium...
2018/0138304 High Electron Mobility Transistor with Graded Back-Barrier Region
A semiconductor device includes a type III-V semiconductor body having a main surface and a rear surface opposite the main surface. A barrier region is...
2018/0138303 TRANSISTOR STRUCTURE INCLUDING A SCANDIUM GALLIUM NITRIDE BACK-BARRIER LAYER
A transistor structure including a scandium gallium nitride back-barrier layer. For instance, the transistor structure may include a buffer layer disposed on a...
2018/0138302 COMPOUND SEMICONDUCTOR DEVICE
A compound semiconductor device includes a first transistor formed on a GaN epitaxial layer. The first transistor includes a gate electrode, a source...
2018/0138301 Power Semiconductor Transistor Having Fully Depleted Channel Region
A power semiconductor transistor includes a trench extending into a semiconductor body along a vertical direction and having first and second trench sidewalls...
2018/0138300 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device includes: a semiconductor substrate including: a drift region that has a first conductivity type; a body region that has a second...
2018/0138299 SEMICONDUCTOR DEVICE
A semiconductor device includes: a semiconductor substrate having a first conductivity-type drift region; a transistor portion; and a diode portion, wherein...
2018/0138298 HIGH RESISTIVITY SILICON-ON-INSULATOR WAFER MANUFACTURING METHOD FOR REDUCING SUBSTRATE LOSS
A multilayer composite structure and a method of preparing a multilayer composite structure are provided. The multilayer composite structure comprises a...
2018/0138297 CYLINDRICAL GERMANIUM NANOWIRE DEVICE
A semiconductor device includes a substrate, a cavity in the substrate, and a germanium (Ge) nanowire suspending in the cavity.
2018/0138296 FORMING A FIN USING DOUBLE TRENCH EPITAXY
The present invention relates generally to semiconductor devices and more particularly, to a structure and method of forming a fin using double trench epitaxy....
2018/0138295 METHOD OF MANUFACTURING A THIN FILM TRANSISTOR
A method of manufacturing a thin film transistor is provided, and includes: providing a substrate; depositing a buffer layer and patterning the buffer layer;...
2018/0138294 METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
A method for producing a semiconductor device includes depositing a first insulating film and a second insulating film on a planar semiconductor layer formed...
2018/0138293 TRENCH TRANSISTORS AND METHODS WITH LOW-VOLTAGE-DROP SHUNT TO BODY DIODE
Methods and systems for power semiconductor devices integrating multiple trench transistors on a single chip. Multiple power transistors (or active regions)...
2018/0138292 METHODS AND APPARATUS FOR THREE-DIMENSIONAL NONVOLATILE MEMORY
A method is provided that includes forming a bit line above a substrate, forming a word line above the substrate, and forming a non-volatile memory cell...
2018/0138291 METHOD OF FORMING GATE SPACER FOR NANOWIRE FET DEVICE
A method of forming a gate-all-around semiconductor device, includes providing a substrate having a layered fin structure thereon. The layered fin structure...
2018/0138290 SEMICONDUCTOR DEVICE INCLUDING SENSE INSULATED-GATE BIPOLAR TRANSISTOR
A semiconductor device of the present invention includes a semiconductor layer including a main IGBT cell and a sense IGBT cell connected in parallel to each...
2018/0138289 GE NANO WIRE TRANSISTOR WITH GAAS AS THE SACRIFICIAL LAYER
An apparatus including a three-dimensional semiconductor body including a channel region and junction regions disposed on opposite sides of the channel region,...
2018/0138288 SILICON CARBIDE SEMICONDUCTOR ELEMENT AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR
A silicon carbide semiconductor element includes n-type silicon carbide epitaxial layers formed on an n.sup.+-type silicon carbide semiconductor substrate,...
2018/0138287 METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
In a method of manufacturing a silicon carbide semiconductor device, an n-type drift layer and a p-type epitaxial base layer are sequentially deposited onto an...
2018/0138286 SLOPED FINFET WITH METHODS OF FORMING SAME
Embodiments of the present disclosure provide an integrated circuit (IC) structure, which can include: a semiconductor fin; a gate dielectric positioned above...
2018/0138285 METHODS OF FORMING INTEGRATED CIRCUIT STRUCTURE WITH SILICIDE REIGON
Embodiments of the present disclosure relate to methods of forming an integrated circuit (IC) structure with a silicide region. Methods according to the...
2018/0138284 Integrated Epitaxial Metal Electrodes
Systems and methods are described herein to include an epitaxial metal layer between a rare earth oxide and a semiconductor layer. Systems and methods are...
2018/0138283 SEMICONDUCTOR DEVICE
It is an object to provide a semiconductor device with low wiring resistance, high transmittance, or a high aperture ratio. A gate electrode, a semiconductor...
2018/0138282 Vertical Gate All Around (VGAA) Devices and Methods of Manufacturing the Same
Vertical gate all around (VGAA) devices and methods of manufacture thereof are described. A method for manufacturing a VGAA device includes: exposing a top...
2018/0138281 THIN FILM TRANSISTOR, ARRAY SUBSTRATE, DISPLAY PANEL AND DISPLAY DEVICE
The present disclosure provides a thin film transistor (TFT), an array substrate, a display panel and a display device. The TFT includes a gate electrode, a...
2018/0138280 SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF
A semiconductor device includes a semiconductor substrate, at least one gate stack, a gate spacer and a dielectric cap. The gate stack is located on the...
2018/0138278 Semiconductor Device
A semiconductor device includes a semiconductor body having a main surface and an active region surrounded by a non-active region. A trench extends from the...
2018/0138277 FABRICATION OF VERTICAL FIELD EFFECT TRANSISTOR STRUCTURE WITH CONTROLLED GATE LENGTH
A method of forming a gate structure, including forming one or more vertical fins on a substrate; forming a bottom spacer on the substrate surface adjacent to...
2018/0138276 SEMICONDUCTOR DEVICE HAVING A MULTI-TERMINAL TRANSISTOR LAYOUT
A semiconductor device includes a gate region, a source/drain region and an insulating layer between the gate region and the source/drain region. The...
2018/0138275 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A silicon carbide semiconductor device includes a silicon carbide substrate, a gate insulating film, and a gate electrode. The gate insulating film is provided...
2018/0138274 SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SILICON CARBIDE SEMICONDUCTOR DEVICE
A silicon carbide semiconductor device includes plural p-type silicon carbide epitaxial layers provided on an n.sup.+-type silicon carbide substrate. In some...
2018/0138273 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
A silicon carbide semiconductor device includes an n-type drift layer and a p-type epitaxial base layer deposited on an n-type silicon carbide substrate, as...
2018/0138272 SEMICONDUCTOR DEVICE
Supposing x is defined as a position of an end of a depletion layer extending when a rated voltage V [V] is applied to a rear surface electrode, W.sub.1 is...
2018/0138271 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING OF SEMICONDUCTOR DEVICE
In forming an n.sup.+-type source region in a surface region of a p-type base layer by ion implantation, ion implantation of arsenic and ion implantation of...
2018/0138270 Nanowire Semiconductor Device Structure and Method of Manufacturing
A nanowire comprises a source region, a drain region and a channel region. The source region is modified to reduce the lifetime of minority carriers within the...
2018/0138269 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
There is provided a semiconductor device capable of enhancing short channel effect by forming a carbon-containing semiconductor pattern in a source/drain...
2018/0138268 METHOD OF PREVENTING BULK SILICON CHARGE TRANSFER FOR NANOWIRE AND NANOSLAB PROCESSING
A method of fabricating a semiconductor device includes providing a substrate having a layered fin structure thereon. The layered fin structure includes base...
2018/0138267 SEMICONDUCTOR FILM, SOLAR CELL, LIGHT-EMITTING DIODE, THIN FILM TRANSISTOR, AND ELECTRONIC DEVICE
A semiconductor film includes a cluster of semiconductor quantum dots each having a metal atom and ligands coordinating to respective semiconductor quantum...
2018/0138266 SiC-Based Superjunction Semiconductor Device
A method of producing a semiconductor device includes providing a semiconductor body including a semiconductor body material having a dopant diffusion...
2018/0138265 POWER SEMICONDUCTOR DEVICE AND METHOD THEREFOR
An RC-IGBT according to the invention includes a high electric field cell formed in a region surrounded by an IGBT cell or in a region surrounded by a diode...
2018/0138264 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A semiconductor device includes a wide-bandgap semiconductor substrate of a first conductivity type, a wide-bandgap semiconductor layer of the first...
2018/0138263 SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
A semiconductor structure includes a capacitor. The capacitor includes a bottom electrode, a first high-k dielectric layer, a second high-k dielectric layer...
2018/0138262 SEMICONDUCTOR DEVICE PACKAGES
A semiconductor device package includes a substrate, a first patterned conductive layer, a second patterned conductive layer, a dielectric layer, a third...
2018/0138261 DISPLAY DEVICE
A display device according to one or more embodiments includes: a display panel including a plurality of pixels; a connector attached to the display panel; a...
← Previous | 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 | Next →

File A Patent Application

  • Protect your idea -- Don't let someone else file first. Learn more.

  • 3 Easy Steps -- Complete Form, application Review, and File. See our process.

  • Attorney Review -- Have your application reviewed by a Patent Attorney. See what's included.