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Patent # Description
2018/0138210 THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE
A metal oxide thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device are...
2018/0138209 SEMICONDUCTOR SUBSTRATE WITH METALLIC DOPED BURIED OXIDE
An SOI substrate includes a metallic doped isolation (i.e., buried oxide) layer. Doping of the isolation layer increases its thermal conductivity, which...
2018/0138208 TRANSISTOR, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE
To provide a semiconductor device capable of retaining data for a long time. The semiconductor device includes a first transistor, an insulator covering the...
2018/0138207 DISPLAY DEVICE
A display device includes a substrate including a pixel area and a peripheral area located outside the pixel area; pixels located in the pixel area; power...
2018/0138206 THIN FILM TRANSISTOR, THIN FILM TRANSISTOR SUBSTRATE, LIQUID CRYSTAL DISPLAY DEVICE, AND METHOD OF...
It is an object to provide a technique capable of suppressing a damage on a semiconductor channel layer due to a process of forming a source electrode and a...
2018/0138205 ACTIVE-MATRIX SUBSTRATE
Provided is an active-matrix substrate in which the line resistance is decreased. The active-matrix substrate includes a substrate 31, a plurality of gate...
2018/0138203 SELF-ALIGNED BACK-PLANE AND WELL CONTACTS FOR FULLY DEPLETED SILICON ON INSULATOR DEVICE
The present disclosure generally relates to semiconductor structures and, more particularly, to self-aligned back-plane and well contacts for a fully depleted...
2018/0138202 SEMICONDUCTOR STRUCTURES AND METHOD FOR FABRICATING THE SAME
A semiconductor structure is provided, which includes a first substrate, an oxide layer formed on the first substrate, a second substrate formed on the oxide...
2018/0138201 LIGHT-EMITTING DEVICE AND INPUT/OUTPUT DEVICE
To provide a light-emitting device or an input/output device with little unevenness in display luminance or high reliability and to provide an input/output...
2018/0138200 LOGIC SEMICONDUCTOR DEVICE
A semiconductor device includes stacked transistors. Each of the transistors includes a semiconductor column including a first conductive region of first...
2018/0138199 SEMICONDUCTOR DEVICE
A semiconductor device includes a semiconductor column including a first conductive region of first conductivity type, a second conductive region of second...
2018/0138198 Trench structured vertical mosfet
A trench structured vertical MOSFET has been proposed. The newly suggested structure has many superior features in performance e.g. density, speed, noise,...
2018/0138197 SEMICONDUCTOR DEVICE HAVING A MEMORY CELL ARRAY PROVIDED INSIDE A STACKED BODY
According to one embodiment, a semiconductor device includes a stacked body, a memory cell array, and a columnar portion. The stacked body is provided on a...
2018/0138196 APPARATUSES AND METHODS FOR FORMING MULTIPLE DECKS OF MEMORY CELLS
Some embodiments include apparatuses and methods having multiple decks of memory cells and associated control gates. A method includes forming a first deck...
2018/0138195 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Provided here may be a semiconductor device and a method of manufacturing the same. The semiconductor device may include a first source seed layer, a second...
2018/0138194 THREE-DIMENSIONAL MEMORY DEVICE HAVING SELECT GATE ELECTRODE THAT IS THICKER THAN WORD LINES AND METHOD OF...
A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, the...
2018/0138193 THREE-DIMENSIONAL MEMORY DEVICE HAVING A MULTILEVEL DRAIN SELECT GATE ELECTRODE AND METHOD OF MAKING THEREOF
A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate and memory...
2018/0138192 SEMICONDUCTOR DEVICE
A semiconductor device includes a peripheral circuit region on a substrate, a polysilicon layer on the peripheral circuit region, a memory cell array region on...
2018/0138191 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE RELATING TO RESISTANCE CHARACTERISTICS
A semiconductor integrated circuit device may include a structure, a first capping layer, a channel layer and a second capping layer. The structure may have an...
2018/0138190 SEMICONDUCTOR MEMORY DEVICE
A semiconductor memory device includes a plurality of electrode layers stacked in a first direction; a semiconductor layer of a columnar shape extending...
2018/0138189 THREE-DIMENSIONAL MEMORY DEVICE WITH SELF-ALIGNED DRAIN SIDE SELECT GATE ELECTRODES AND METHOD OF MAKING THEREOF
A three-dimensional memory device including self-aligned drain select level electrodes is provided. Memory stack structures extend through an alternating stack...
2018/0138188 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A method of forming a nonvolatile memory device includes forming first, second, and third gate structures, with the second and third gate structures including...
2018/0138187 METHODS OF FORMING SEMICONDUCTOR DEVICES USING SEMI-BIDIRECTIONAL PATTERNING
Devices and methods of fabricating integrated circuit devices using semi-bidirectional patterning are provided. One method includes, for instance: obtaining an...
2018/0138186 SRAM Circuits with Aligned Gate Electrodes
A device includes a Static Random Access Memory (SRAM) array, and an SRAM cell edge region abutting the SRAM array. The SRAM array and the SRAM cell edge...
2018/0138185 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes a substrate, a first transistor, and a second transistor. The first transistor is disposed on the substrate. The second...
2018/0138184 DYNAMIC RANDOM ACCESS MEMORY AND FABRICATION METHOD THEREOF
Dynamic random access memory (DRAM) and fabrication methods thereof are provided. An exemplary fabrication method includes providing a base substrate; forming...
2018/0138183 DYNAMIC RANDOM ACCESS MEMORY AND FABRICATION METHOD THEREOF
Dynamic random access memory (DRAM) and fabrication methods thereof are provided. An exemplary fabrication method includes providing a base substrate; forming...
2018/0138182 CONDUCTIVE STRUCTURES, WORDLINES AND TRANSISTORS
Some embodiments include a conductive structure which has a first conductive material having a work function of at least 4.5 eV, and a second conductive...
2018/0138181 MEMORY CELL
A microelectronic component is capable of being used as a memory cell. The component includes a semiconductor layer resting on an insulating layer and...
2018/0138180 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
A semiconductor device includes a semiconductor substrate having a first region and a second region, a plurality of first semiconductor fins in the first...
2018/0138179 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device including, in cross section, a semiconductor substrate; a gate insulating film on the semiconductor substrate; a gate electrode on the...
2018/0138178 SEMICONDUCTOR DEVICE INCLUDING BARRIER LAYER AND MANUFACTURING METHOD THEREOF
A manufacturing method of a semiconductor device includes the following steps. A barrier layer is formed in a first region and a second region of a...
2018/0138177 FORMATION OF BAND-EDGE CONTACTS
Formation of band-edge contacts include, for example, providing an intermediate semiconductor structure comprising a substrate and a gate thereon and...
2018/0138176 SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME
In a method of manufacturing a semiconductor device, first and second gate structures are formed. The first (second) gate structure includes a first (second)...
2018/0138175 FORMING GATES WITH VARYING LENGTH USING SIDEWALL IMAGE TRANSFER
Methods of forming semiconductor devices include forming structures having an inner vertical layer and spacers on sidewalls of the inner vertical layer on a...
2018/0138174 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
A semiconductor device includes a substrate including first to third regions, wherein the third region is positioned in a first direction between the first and...
2018/0138173 Semiconductor Device and Method of Manufacture
In accordance with some embodiments, conductive material is removed from over a first plurality of fins and second plurality of fins, wherein the first...
2018/0138172 SEMICONDUCTOR COMPONENT AND FABRICATING METHOD THEREOF
A semiconductor component includes a substrate having a dense zone and a less-dense zone, at least one first FinFET device disposed on the dense zone, and at...
2018/0138171 Semiconductor Structures and Methods of Forming the Same
Semiconductor structures and methods for forming a semiconductor structure are provided. A first active semiconductor region is disposed in a first vertical...
2018/0138170 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A method of manufacturing a semiconductor device includes: implanting charged particles into a first range and a second range in a semiconductor substrate from...
2018/0138169 Semiconductor Devices and Methods for Operating Semiconductor Devices
A semiconductor device includes a plurality of forward conducting insulated-gate bipolar transistor cells configured to conduct a current in a forward...
2018/0138168 SEMICONDUCTOR FIELD EFFECT TRANSISTORS AND MANUFACTURING METHOD THEREOF
A semiconductor device includes a substrate, source/drain contacts, gate structures, conductive elements, and a first stop layer. The substrate has...
2018/0138167 ELECTROSTATIC DISCHARGE (ESD) PROTECTION DEVICE AND METHOD FABRICATING THE ESD PROTECTION DEVICE
An electrostatic discharge (ESD) device includes a gate structure, disposed on a substrate. A drain doped region of a first conductive type is in the...
2018/0138166 Semiconductor Device for Electrostatic Discharge Protection
A semiconductor device for ESD protection, includes a drain region, a first doped region, a second doped region and a source region. The drain region is...
2018/0138165 SEMICONDUCTOR DEVICE FOR PREVENTING FIELD INVERSION
A semiconductor device includes a semiconductor layer having an element formation region in which a semiconductor element is formed. An element isolation well...
2018/0138164 METHOD FOR FABRICATING SUBSTRATE STRUCTURE AND SUBSTRATE STRUCTURE FABRICATED BY USING THE METHOD
There is provided a method for fabricating a substrate structure capable of enhancing process reproducibility and process stability by trimming a bevel region...
2018/0138163 FINGERPRINT RECOGNITION MODULE HAVING LIGHT-EMITTING FUNCTION AND MANUFACTURING METHOD THEREFOR
This application provides a fingerprint recognition module having a light-emitting function and a manufacturing method therefor. The fingerprint recognition...
2018/0138162 DISPLAY APPARATUS AND MANUFACTURING METHOD THEREOF
A display apparatus and a micro-light emitting diode are disclosed. The display apparatus includes: a first substrate including a light emitting diode part...
2018/0138161 Device with Light Emitting Diodes
A multi-LED device comprises a transparent substrate, a plurality of light emitting diodes, LEDs, arranged for emitting light of a plurality of colours and...
2018/0138160 LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
A light-emitting device and a manufacturing method thereof are provided, which device yields light exhibiting an actual hue with a deviation reduced as much as...
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