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Patent # Description
2018/0151764 PHOTO-ACTIVATED QUANTUM DOT CAPACITOR PHOTODETECTORS
A photon-activated quantum dot capacitor and method of fabrication. A photon-activated quantum dot capacitor photodetector having a read only integrated...
2018/0151763 SEMICONDUCTOR DEVICES INCLUDING TWO-DIMENSIONAL MATERIALS AND METHODS OF MANUFACTURING THE SEMICONDUCTOR DEVICES
Semiconductor devices including two-dimensional (2D) materials and methods of manufacturing the semiconductor devices are provided. A semiconductor device may...
2018/0151762 Infrared Light Emitting Diode
An infrared light-emitting diode includes, from up to bottom, a P-type ohmic electrode, a contact layer, a P-type cladding layer, an active layer, an N-type...
2018/0151761 DISPLAY DEVICE
According to one embodiment, a display device includes a metal line, a first reflection suppressing layer, a second reflection suppressing layer. The first...
2018/0151760 PHOTOELECTRIC CONVERSION DEVICE, DRIVE METHOD OF PHOTOELECTRIC CONVERSION DEVICE, AND IMAGING SYSTEM
A photoelectric conversion device includes: a first electrode; a second electrode; a photoelectric conversion layer arranged between the first electrode and...
2018/0151759 QE APPROACH BY DOUBLE-SIDE, MULTI ABSORPTION STRUCTURE
The present disclosure relates to an integrated chip that has a light sensing element arranged within a substrate. An absorption enhancement structure is...
2018/0151758 PHOTODETECTION DEVICE AND SYSTEM HAVING AVALANCHE AMPLIFICATION
A photodetection device includes a semiconductor substrate; and a pixel including a first semiconductor region having signal charges as majority carriers, and...
2018/0151757 SOLID-STATE IMAGING ELEMENT, METHOD FOR MANUFACTURING SOLID-STATE IMAGING ELEMENT, AND ELECTRONIC DEVICE
A solid-state imaging element including: a sensor substrate in which a photoelectric conversion section is arranged and formed; a circuit substrate in which a...
2018/0151756 SCHOTTKY BARRIER DIODE
A Schottky barrier diode includes a semiconductor layer having a major surface, a diode region of a first conductivity type formed in a surface layer portion...
2018/0151755 IMPACT IONIZATION SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device including a field effect transistor (FET) device includes a substrate and a channel structure formed of a two-dimensional (2D) material...
2018/0151754 MEMORY DEVICE AND OPERATION METHOD THEREOF
A memory device and an operation method thereof are provided. The memory device includes a semiconductor substrate and an oxide-nitride-oxide (ONO) gate...
2018/0151753 EMBEDDED NON-VOLATILE MEMORY AND METHOD FOR MANUFACTURING THE SAME
A semiconductor device includes a substrate, a trap storage structure, a control gate, a cap structure, a word line well, a source line, spacers, a gap oxide...
2018/0151752 Semiconductor Device with Transition Metal Dichalocogenide Hetero-Structure
A method includes depositing a first transition metal film having a first transition metal on a substrate and performing a first sulfurization process to the...
2018/0151751 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device including a field effect transistor (FET) device includes a substrate and a channel structure formed of a two-dimensional (2D) material....
2018/0151750 SEMICONDUCTOR DEVICE
A transistor having high field-effect mobility is provided. A transistor having stable electrical characteristics is provided. A transistor having small...
2018/0151749 Thin Film Transistor, Array Substrate and Methods for Manufacturing and Driving the same and Display Device
Disclosed is a thin film transistor, an array substrate and method for manufacturing and driving the same, and a display device. The thin film transistor...
2018/0151748 SEMICONDUCTOR DEVICE
It is an object to provide a transistor having a new multigate structure in which operating characteristics and reliability are improved. In a transistor...
2018/0151747 Array Substrate and Liquid Crystal Display Device Including the Same
An array substrate includes a first substrate, a thin film transistor disposed on the first substrate, a first electrode located on the first substrate, a...
2018/0151746 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes a memory circuit and a logic circuit. The memory circuit includes a word line, a bit line, a common line and a memory...
2018/0151745 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes a first channel region disposed over a substrate, and a first gate structure disposed over the first channel region. The first...
2018/0151744 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A highly reliable semiconductor device having stable electric characteristics is provided by suppressing, in a transistor including an oxide semiconductor...
2018/0151743 SEMICONDUCTOR DEVICE
To provide a transistor having a high on-state current. A semiconductor device includes a first insulator containing excess oxygen, a first oxide semiconductor...
2018/0151742 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A minute transistor is provided. Alternatively, a transistor with low parasitic capacitance is provided. Alternatively, a transistor having high frequency...
2018/0151741 THIN-FILM TRANSISTOR ARRAY PANEL
The present invention disclosure proposes a TFT array panel includes a back-channel etching structure TFT having a semiconductor layer made from a tin-silicon...
2018/0151740 Methods for Straining a Transistor Gate through Interlayer Dielectric (ILD) Doping Schemes
A method of making a semiconductor device includes doping a first portion of an interlayer dielectric (ILD) with an oxygen-containing material, wherein the ILD...
2018/0151739 SEMICONDUCTOR DEVICE AND METHOD OF FORMING SEMICONDUCTOR FIN THEREOF
A semiconductor device includes a substrate, an epitaxial channel structure and a gate structure. The epitaxial channel structure is located above the...
2018/0151738 Finfets and Methods of Forming Finfets
An embodiment is a method including recessing a gate electrode over a semiconductor fin on a substrate to form a first recess from a top surface of a...
2018/0151737 MECHANISMS FOR GROWING EPITAXY STRUCTURE OF FINFET DEVICE
A semiconductor structure includes a gate structure disposed over a substrate, and a plurality of source/drain features disposed on the substrate and...
2018/0151736 Methods of Fabricating Semiconductor Devices
Methods of forming a semiconductor device may include forming a fin-type active pattern that extends in a first direction on a substrate, the fin-type active...
2018/0151734 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A method of manufacturing a semiconductor device includes forming an alloy semiconductor material layer comprising a first element and a second element on a...
2018/0151733 CARBON-BASED INTERFACE FOR EPITAXIALLY GROWN SOURCE/DRAIN TRANSISTOR REGIONS
Techniques are disclosed for forming p-MOS transistors having one or more carbon-based interface layers between epitaxially grown S/D regions and the channel...
2018/0151732 RESISTANCE REDUCTION IN TRANSISTORS HAVING EPITAXIALLY GROWN SOURCE/DRAIN REGIONS
Techniques are disclosed for resistance reduction in p-MOS transistors having epitaxially grown boron-doped silicon germanium (SiGe:B) S/D regions. The...
2018/0151731 ELONGATED SOURCE/DRAIN REGION STRUCTURE IN FINFET DEVICE
A semiconductor device includes a semiconductor substrate, an n-type fin field effect transistor. The n-type fin field effect transistor includes a fin...
2018/0151730 Dopant Concentration Boost in Epitaxially Formed Material
A dopant boost in the source/drain regions of a semiconductor device, such as a transistor can be provided. A semiconductor device can include a doped epitaxy...
2018/0151729 STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a dielectric layer. The...
2018/0151728 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
A semiconductor device includes a substrate with an upper surface and a lower surface, and first to third active patterns extending from the upper surface of...
2018/0151727 SPACER FORMATION IN VERTICAL FIELD EFFECT TRANSISTORS
Embodiments of the present invention provide systems and methods for generating oxide spacers in a vertical field transistor. The fin of the channel...
2018/0151726 EXTENDED DRAIN METAL-OXIDE-SEMICONDUCTOR TRANSISTOR
Devices and methods for forming a device are disclosed. A substrate is provided. A first body well of a second polarity type is formed in the substrate. A...
2018/0151725 SOI POWER LDMOS DEVICE
An LDMOS device includes a handle portion having a buried dielectric layer and a semiconductor layer thereon doped a second dopant type. A drift region doped a...
2018/0151724 ULTRA HIGH VOLTAGE SEMICONDUCTOR DEVICE WITH ELECTROSTATIC DISCHARGE CAPABILITIES
A device having a drain region with a drain rectangular portion having a first end and a second end, a first drain end portion contiguous with the drain...
2018/0151723 LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTING DEVICES WITH LIGHTLY-DOPED ISOLATION LAYERS
An example laterally diffused metal oxide semiconducting (LDMOS) device includes a semiconductor substrate of a first conductivity type, active MOS regions,...
2018/0151722 LDMOS DEVICE WITH BODY DIFFUSION SELF-ALIGNED TO GATE
A laterally diffused metal oxide semiconductor (LDMOS) device includes a substrate having a p-epi layer thereon, a p-body region in the p-epi layer and an...
2018/0151721 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device according to the present invention includes a semiconductor layer provided with a gate trench, a first conductivity type source region...
2018/0151720 FOLDED CHANNEL TRENCH MOSFET
A trench MOSFET device includes a body, region and source region that undulate along a channel width direction of the MOSFET device such that the body region...
2018/0151719 SILICON CARBIDE SEMICONDUCTOR DEVICE
A silicon carbide semiconductor device includes a first conductivity type silicon carbide substrate having an active region and a termination region...
2018/0151718 FinFET Device and Method of Forming
A finFET device and a method of forming are provided. The device includes a transistor comprising a gate electrode and a first source/drain region next to the...
2018/0151717 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH MULTILAYERED CHANNEL STRUCTURE
A semiconductor device includes a fin field effect transistor (FinFET). The FinFET includes a channel disposed on a fin, a gate disposed over the channel and a...
2018/0151716 SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF
A semiconductor device includes a semiconductor substrate, a gate stack and at least one gate spacer. The gate stack is located on the semiconductor substrate....
2018/0151715 DIAMOND BASED CURRENT APERTURE VERTICAL TRANSISTOR AND METHODS OF MAKING AND USING THE SAME
A semiconductor structure, device, or vertical field effect transistor is comprised of a drain, a drift layer disposed in a first direction relative to the...
2018/0151714 NITRIDE SEMICONDUCTOR SUBSTRATE
Provided is a nitride semiconductor substrate which improves electron mobility and reduce a series resistance component of a transistor. In the nitride...
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