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Patent # Description
2018/0158989 SEMICONDUCTOR LIGHT-EMITTING APPARATUS HAVING WAVELENGTH-CONVERTING STRUCTURE WITH UNEVEN TOP SURFACE AND ITS...
A semiconductor light-emitting apparatus is constructed by a substrate; a semiconductor light-emitting element mounted on the substrate; a ...
2018/0158988 SEMICONDUCTOR LIGHT EMITTING DEVICE
A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions...
2018/0158987 DISPLAY DEVICE
A display device is provided. The display device includes a substrate, a first transistor, and a light emitting diode. The first transistor is disposed on the...
2018/0158986 VERTICAL STRUCTURE LEDS
A light emitting diode can include a metal support layer: a GaN-based semiconductor structure having a less than 5 microns thickness on the metal support...
2018/0158985 QUANTUM DOT FOR EMITTING LIGHT AND METHOD FOR SYNTHESIZING SAME
A quantum dot for emitting light under electrical stimulation has a center of a first composition and a surface of a second composition. The second composition...
2018/0158984 Quantum Dot LED with Spacer Particles
Embodiments of the present application relate to the use of quantum dots mixed with spacer particles. An illumination device includes a first conductive layer,...
2018/0158983 DISPLAY APPARATUS HAVING QUANTUM DOT UNIT OR QUANTUM DOT SHEET AND METHOD FOR MANUFACTURING QUANTUM DOT UNIT
There is provided a display apparatus and a method of manufacturing the same. The display apparatus includes: a quantum dot unit or a quantum dot sheet capable...
2018/0158982 Light Emitting Diode and Fabrication Method Thereof
A method of fabricating a light emitting diode includes providing a substrate, and forming successively an N-type layer, an active layer, an electronic...
2018/0158981 ULTRAVIOLET LIGHT EMITTING DIODE, LIGHT EMITTING DIODE PACKAGE, AND LIGHTING DEVICE
Embodiments relates to an ultraviolet light emitting diode, a method of manufacturing an ultraviolet light emitting diode, a light emitting diode package, and...
2018/0158980 LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME
A compound semiconductor device includes a substrate, including a top surface, a bottom surface, a side surface connecting the top surface and the bottom...
2018/0158979 DISPLAY WITH SURFACE MOUNT EMISSIVE ELEMENTS AND ACTIVE MATRIX DRIVE
A surface mount emissive element is provided with a top surface and a bottom surface. A first electrical contact is formed exclusively on the top surface, and...
2018/0158978 Semiconductor Heterostructure Polarization Doping
A semiconductor heterostructure including a polarization doped region is described. The region can correspond to an active region of a device, such as an...
2018/0158977 METHOD OF MANUFACTURNG SOLAR CELL
A method of manufacturing a solar cell is disclosed. The method includes an overlap operation of overlapping front surfaces of two semiconductor substrates...
2018/0158976 TANDEM SOLAR CELL AND METHOD OF MANUFACTURING THE SAME
The present disclosure relates to a tandem solar cell and a method of manufacturing the same, and more particularly, to a tandem solar cell having a perovskite...
2018/0158975 COMPOUND SEMICONDUCTOR SOLAR CELL
According to an aspect of the present invention, there is provided a compound semiconductor solar cell, comprising: a light absorbing layer comprising a...
2018/0158974 SOLAR CELL REAR SURFACE PROTECTIVE SHEET AND SOLAR CELL MODULE
Provided are: a solar cell rear surface protective sheet including a resin base material, a first colored layer which is disposed on one surface side of the...
2018/0158973 SILVER COPPER INDIUM GALLIUM SELENIDE REACTIVE SPUTTERING METHOD AND APPARATUS, AND PHOTOVOLTAIC CELL...
A method of making a semiconductor structure includes a step of sputtering silver, copper, indium, and gallium on a substrate in an ambient including at least...
2018/0158972 METHOD AND SUBSTRATES FOR MATERIAL APPLICATION
A method of and an apparatus for making a composite material is provided. The composite is able to be formed by mixing a binder and a physical property...
2018/0158971 TRANSPARENT PHOTOELECTRIC ELEMENT AND METHOD FOR FABRICATING THE SAME
A transparent photoelectric element and a method for fabricating the same are provided. The method includes providing a transparent substrate, forming a...
2018/0158970 SOLAR CELL AND SOLAR CELL PANEL INCLUDING THE SAME
Disclosed is a solar cell panel including: a semiconductor substrate having a long axis and a short axis that intersect; a first conductivity type region...
2018/0158969 METHOD OF MANUFACTURING A FINGER ELECTRODE FOR A SOLAR CELL
A method of manufacturing a finger electrode for a solar cell including printing a conductive paste on one surface of a substrate using a print mask having an...
2018/0158968 SOLAR CELL AND METHOD OF MANUFACTURING THE SAME
A solar cell and a method of manufacturing the same are discussed. The method of manufacturing the solar cell includes forming a dopant layer on one surface of...
2018/0158967 ELECTRICAL AND OPTICAL VIA CONNECTIONS ON A SAME CHIP
The present disclosure relates to semiconductor structures and, more particularly, to electrical and optical via connections on a same chip and methods of...
2018/0158966 THERMAL MANAGEMENT SYSTEM FOR CONTROLLING THE TEMPERATURE OF A REFLECTIVE SURFACE HAVING A SOLAR CONCENTRATOR ARRAY
A thermal management system ("TMS") for controlling the temperature of a selective reflective panel is disclosed. The TMS includes a solar concentrator array,...
2018/0158965 SCHOTTKY BARRIER RECTIFIER
The present disclosure provides a schottky barrier rectifier, comprising: a communication layer; a drift layer provided on a side of the communication layer...
2018/0158964 Methods for Manufacturing a Semiconductor Device Having a Non-Ohmic Contact Formed Between a Semiconductor...
An embodiment of a method of manufacturing a semiconductor device includes providing a semiconductor material that comprises SiC and forming an electrically...
2018/0158963 SEMICONDUCTOR DEVICE
The technique disclosed in the Description adjusts a modulation level to enable prevention of partial concentration of carriers in a recovery operation. A...
2018/0158962 PULSE GENERATION DEVICE
A pulse generation device includes a substrate, a spin injector provided on the substrate and made of a ferromagnetic body, a spin rotor provided on the...
2018/0158961 SEMICONDUCTOR DEVICE
A semiconductor device having a structure which can prevent a decrease in electrical characteristics due to miniaturization is provided. The semiconductor...
2018/0158960 THIN FILM TRANSISTOR AND METHOD FOR MAKING THE SAME
The disclosure relates to a thin film transistor and a method for making the same. The thin film transistor includes a substrate; a gate on the substrate; a...
2018/0158959 THIN FILM TRANSISTOR AND DISPLAY DEVICE USING THE SAME
The purpose of the invention is to eliminate an abnormal current at an edge of a semiconductor layer in a thin film transistor. The invention is: A thin film...
2018/0158958 APPARATUS AND METHODS TO CREATE A BUFFER WHICH EXTENDS INTO A GATED REGION OF A TRANSISTOR
Transistor devices may be formed having a buffer between an active channel and a substrate, wherein the active channel and a portion of the buffer form a gated...
2018/0158957 HIGH ELECTRON MOBILITY TRANSISTORS WITH LOCALIZED SUB-FIN ISOLATION
Crystalline heterostructures including an elevated fin structure extending from a sub-fin structure over a substrate. Devices, such as III-V transistors, may...
2018/0158956 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as...
2018/0158955 CONTROLLING STRUCTURAL PHASE TRANSITIONS AND PROPERTIES OF TWO-DIMENSIONAL MATERIALS BY INTEGRATING WITH...
The invention relates to heterostructures including a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing...
2018/0158954 THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR
A thin film transistor includes a gate electrode. The thin film transistor further includes an oxide semiconductor layer which includes at least indium and is...
2018/0158953 ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
Disclosed are an array substrate and a method for manufacturing the same, which belong to the technical field of display, and are able to solve the technical...
2018/0158952 METHOD AND STRUCTURE FOR INCORPORATING STRAIN IN NANOSHEET DEVICES
A semiconductor structure includes a plurality of stacked and suspended semiconductor nanosheets located above a semiconductor substrate. Each semiconductor...
2018/0158951 SIGE SOURCE/DRAIN STRUCTURE AND PREPARATION METHOD THEREOF
A structure of SiGe source/drain and a preparation method thereof are disclosed in the present invention. Firstly, providing a semiconductor single crystal...
2018/0158950 SEMICONDUCTOR STRUCTURE
A semiconductor structure includes a first source/drain region, a second source/drain region, a channel doping region, a gate structure, a first well and a...
2018/0158949 SPACER FORMATION IN VERTICAL FIELD EFFECT TRANSISTORS
Embodiments of the present invention provide systems and methods for generating oxide spacers in a vertical field transistor. The fin of the channel...
2018/0158948 SELF-ALIGNED REPLACEMENT METAL GATE SPACERLESS VERTICAL FIELD EFFECT TRANSISTOR
A method of making a vertical field effect transistor includes forming a semiconductor nanowire that extends from a substrate surface. A first sacrificial...
2018/0158947 VERTICAL TRANSISTORS WITH SIDEWALL GATE AIR GAPS AND METHODS THEREFOR
A method is provided that includes forming a first vertically-oriented transistor above a substrate, the first vertically-oriented transistor comprising a...
2018/0158946 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A semiconductor device includes a semiconductor substrate, a first epitaxial layer of a first conductivity type, a first semiconductor region of the first...
2018/0158945 SELF-ALIGNED SILICON GERMANIUM FINFET WITH RELAXED CHANNEL REGION
A self-aligned SiGe FinFET device features a relaxed channel region having a high germanium concentration. Instead of first introducing germanium into the...
2018/0158944 INDIUM-RICH NMOS TRANSISTOR CHANNELS
Techniques are disclosed for forming high mobility NMOS fin-based transistors having an indium-rich channel region electrically isolated from the sub-fin by an...
2018/0158943 FIELD-EFFECT TRANSISTOR
A semiconductor device includes a semiconductor substrate, a gate structure formed over the semiconductor substrate, and an epitaxial structure formed...
2018/0158942 HIGH-ELECTRON-MOBILITY TRANSISTOR WITH BURIED INTERCONNECT
A high-electron-mobility transistor (HEMT) includes a substrate layer of silicon, a first contact disposed on a first surface of the substrate layer, and a...
2018/0158941 Semiconductor Device
In an embodiment, a semiconductor device includes a substrate, a Group III nitride based transistor arranged on a front surface of the substrate, and a...
2018/0158940 HIGH-ELECTRON-MOBILITY TRANSISTOR DEVICES
A device includes a first high electronic mobility transistor (HEMT) and a second HEMT. The first HEMT includes a first gate, a source coupled to the first...
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