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Patent # Description
2018/0158939 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
In mesa regions between adjacent trenches disposed in an n.sup.--type drift layer and in which a first gate electrode is disposed via a first gate insulating...
2018/0158938 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
According to one embodiment, a semiconductor device includes a first electrode, a semiconductor layer, and a first insulating portion. The first electrode...
2018/0158937 BIPOLAR TRANSISTOR WITH SUPERJUNCTION STRUCTURE
A superjunction bipolar transistor includes an active transistor cell area that includes active transistor cells electrically connected to a first load...
2018/0158936 GaN-BASED BIDIRECTIONAL SWITCH DEVICE
The present invention relates to the field of semiconductor switches, and relates more particularly to a GaN-based bidirectional switch device. The present...
2018/0158935 ASYMMETRIC GATED FIN FIELD EFFECT TRANSISTOR (FET) (FINFET) DIODES
Asymmetric gated fin field effect transistor (FET) (finFET) diodes are disclosed. In one aspect, an asymmetric gated finFET diode employs a substrate that...
2018/0158934 LATERAL HETEROJUNCTIONS IN TWO-DIMENSIONAL MATERIALS INTEGRATED WITH MULTIFERROIC LAYERS
The invention relates to heterostructures including a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing...
2018/0158933 OFFSTATE PARASITIC LEAKAGE REDUCTION FOR TUNNELING FIELD EFFECT TRANSISTORS
A method including forming a non-planar conducting channel of a device between junction regions on a substrate, the substrate including a blocking material...
2018/0158932 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Disclosed is a method to manufacture a thin film transistor having an oxide semiconductor as a channel formation region. The method includes; forming an oxide...
2018/0158931 SELF-ALIGNED FINFET FORMATION
A method for fabricating a semiconductor device comprises forming a first hardmask, a planarizing layer, and a second hardmask on a substrate. Removing...
2018/0158930 Confined Epitaxial Regions for Semiconductor Devices and Methods of Fabricating Semiconductor Devices Having...
Confined epitaxial regions for semiconductor devices and methods of fabricating semiconductor devices having confined epitaxial regions are described. For...
2018/0158929 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
A semiconductor device and a fabrication method are provided. The method includes providing a substrate; forming a gate structure film on the substrate;...
2018/0158928 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
The present disclosure relates to the technical field of semiconductors, and discloses a semiconductor device and a manufacturing method therefor. The...
2018/0158927 PSEUDOMORPHIC INGAAS ON GAAS FOR GATE-ALL-AROUND TRANSISTORS
A non-planar gate all-around device and method of fabrication thereby are described. In one embodiment, a multi-layer stack is formed by selectively depositing...
2018/0158926 PROCESS OF FORMING SEMICONDUCTOR DEVICE
A process of forming a nitride semiconductor is disclosed. The process includes steps of (a) growing an aluminum gallium nitride (GaN) as a channel layer, and...
2018/0158925 FABRICATION OF AN ISOLATED DUMMY FIN BETWEEN ACTIVE VERTICAL FINS WITH TIGHT FIN PITCH
A method of forming an arrangement of active and inactive fins on a substrate, including forming at least three vertical fins on the substrate, forming a...
2018/0158924 SLOPED FINFET WITH METHODS OF FORMING SAME
Embodiments of the present disclosure provide an integrated circuit (IC) structure, which can include: a semiconductor fin; a gate dielectric positioned above...
2018/0158923 CONTACT AREA TO TRENCH SILICIDE RESISTANCE REDUCTION BY HIGH-RESISTANCE INTERFACE REMOVAL
A method for manufacturing a semiconductor device comprises forming a silicide region on a semiconductor substrate, forming a gate structure on the...
2018/0158922 REAL-TIME WIRELESS SYNCHRONIZATION OF LIVE EVENT AUDIO STREAM WITH A VIDEO RECORDING
Systems and methods are presented herein that facilitate temporally synchronizing, in real time, a separately sourced high quality audio segment of a live...
2018/0158921 THIN FILM TRANSISTOR AND METHOD FOR MAKING THE SAME
The disclosure relates to a thin film transistor and a method for making the same. The thin film transistor includes a substrate; a semiconductor layer on the...
2018/0158920 Semiconductor Device with Diode Region and Trench Gate Structure
A semiconductor device includes a semiconductor body formed from a semiconductor material with a band-gap of at least 2.0 eV, the semiconductor body having a...
2018/0158919 MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WORK FUNCTION GATE ELECTRODE
Semiconductor devices including non-volatile memory devices and methods of fabricating the same are provided. Generally, the memory device includes a gate...
2018/0158917 LATERAL HIGH ELECTRON MOBILITY TRANSISTOR WITH INTEGRATED CLAMP DIODE
A method of forming a semiconductor device includes providing an engineered substrate, forming a gallium nitride layer coupled to the engineered substrate,...
2018/0158916 Semiconductor Component Having a Doped Substrate Layer and Corresponding Methods of Manufacturing
Representative implementations of devices and techniques provide an optimized layer for a semiconductor component. In an example, a doped portion of a wafer,...
2018/0158915 SEMICONDUCTOR DEVICE
A semiconductor device according to the present invention includes a semiconductor layer of SiC of a first conductivity type, a plurality of body regions of a...
2018/0158914 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
A semiconductor device includes a first semiconductor layer of a first conductivity type provided on a front surface of a silicon carbide semiconductor...
2018/0158913 HETEROSTRUCTURES AND ELECTRONIC DEVICES DERIVED THEREFROM
The advent of graphene and related 2D materials has recently led to a new technology: hetero-structures based on these atomically thin crystals. The paradigm...
2018/0158912 MOSFET and Memory Cell Having Improved Drain Current Through Back Bias Application
A semiconductor metal-oxide-semiconductor field effect transistor (MOSFET) transistor with increased on-state current obtained through intrinsic bipolar...
2018/0158911 METHOD OF FORMING A SEMICONDUCTOR DEVICE HAVING IMPURITY REGION
A semiconductor device having an impurity region is provided. The semiconductor device includes a fin active region having protruding regions and a recessed...
2018/0158910 Semiconductor Device and Manufacturing Method for the Semiconductor Device
In a semiconductor device including a super junction structure that p-type columns and n-type columns are periodically arranged, a depth of a p-type column...
2018/0158909 III-NITRIDE DEVICES INCLUDING A GRADED DEPLETING LAYER
A III-N device includes a III-N layer structure including a III-N channel layer, a III-N barrier layer over the III-N channel layer, and a graded III-N layer...
2018/0158908 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
A semiconductor device and a fabricating method thereof are provided. The semiconductor device includes a substrate, a first nanowire spaced apart from a first...
2018/0158907 NANOCRYSTALS WITH HIGH EXTINCTION COEFFICIENTS AND METHODS OF MAKING AND USING SUCH NANOCRYSTALS
A population of bright and stable nanocrystals is provided. The nanocrystals include a semiconductor core and a thick semiconductor shell and can exhibit high...
2018/0158906 DIELECTRIC AND ISOLATION LOWER FIN MATERIAL FOR FIN-BASED ELECTRONICS
A dielectric and isolation lower fin material is described that is useful for fin-based electronics. In some examples, a dielectric layer is on first and...
2018/0158905 THIN FILM TRANSISTOR AND METHOD FOR MAKING THE SAME
The disclosure relates to a thin film transistor and a method for making the same. The thin film transistor includes a substrate; a semiconductor layer on the...
2018/0158904 THIN FILM TRANSISTOR AND METHOD FOR MAKING THE SAME
The disclosure relates to a thin film transistor and a method for making the same. The thin film transistor includes a substrate; a gate located on the...
2018/0158903 METHOD OF FABRICATING STI TRENCH AND STI STRUCTURE
A method of fabricating an STI trench has a sidewall with two different slopes. The fabricating steps include providing a substrate with a patterned mask...
2018/0158902 SEMICONDUCTOR DEVICE
A semiconductor device comprises a fin shaped structure, a shallow trench isolation, a diffusion break structure and a gate electrode. The fin shaped structure...
2018/0158901 Superjunction Semiconductor Device Having a Superstructure
According to an embodiment of a semiconductor substrate, the semiconductor substrate includes a superjunction structure in a device region of a semiconductor...
2018/0158900 SUPER-JUNCTION STRUCTURE AND METHOD FOR MANUFACTURING THE SAME AND SEMICONDUCTOR DEVICE THEREOF
The present disclosure relates to a super-junction structure, a method for manufacturing the super-junction structure and a semiconductor device including the...
2018/0158899 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
A first parallel pn layer in which first n-type regions and first p-type regions are disposed in a plan view layout of stripes in an element active portion. A...
2018/0158898 SEMICONDUCTOR DEVICE
A semiconductor device includes a compound semiconductor substrate including a gate region and an active region, a trench provided in a range between the gate...
2018/0158897 CAPACITOR STRUCTURE
Devices and methods for forming a device are disclosed. A substrate is provided. The substrate has first and second major surfaces. A capacitor is disposed in...
2018/0158896 COIL COMPONENT
A coil component includes a first core including a support portion, a core portion protruding from the support portion, and a sidewall portion protruding from...
2018/0158895 DISPLAY DEVICE
A display device includes a substrate, a first insulating layer, a power lines, and connection lines. The substrate includes a peripheral area adjacent to at...
2018/0158894 DISPLAY DEVICE
A display device includes a substrate, a display area disposed on the substrate and including a plurality of pixels and data lines, a peripheral area disposed...
2018/0158893 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
Provided is a display device having a flexible substrate including an active region and a wiring region. The active region possesses a plurality of pixels each...
2018/0158892 Electro-Optical Element Integrating an Organic Electroluminescent Diode and an Organic Transistor for...
In this element, one of the current flow electrodes of the transistor and the lower electrode of the diode form a common layer. According to the invention, the...
2018/0158891 DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE
Provided is a display device, including: a substrate; signal lines including a gate line, a data line, and a driving voltage line that collectively define an...
2018/0158890 FLEXIBLE ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
Provided are a flexible organic light-emitting display device and a method of manufacturing the same. The flexible organic light-emitting display device...
2018/0158889 ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME
An organic light emitting diode display comprises a substrate comprising a major surface; first, second, third and fourth electrodes positioned over the...
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