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Patent # Description
2018/0166571 METHOD FOR FORMING RECESS WITHIN EPITAXIAL LAYER
A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first recess adjacent to two sides of...
2018/0166570 METHOD OF FORMING CONFORMAL EPITAXIAL SEMICONDUCTOR CLADDING MATERIAL OVER A FIN FIELD EFFECT TRANSISTOR...
The present disclosure generally relates to devices having conformal semiconductor cladding materials, and methods of forming the same. The cladding material...
2018/0166569 SEMICONDUCTOR STRUCTURE AND FABRICATING METHOD THEREOF
In accordance with some embodiments of the present disclosure, a semiconductor structure and a fabricating method thereof are provided. The method for forming...
2018/0166568 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor device includes first, second, and third metallization layers, on top of one another, that are disposed above a substrate, wherein each of the...
2018/0166567 LDMOS TRANSISTORS FOR CMOS TECHNOLOGIES AND AN ASSOCIATED PRODUCTION METHOD
In a semiconductor component or device, a lateral power effect transistor is produced as an LDMOS transistor in such a way that, in combination with a trench...
2018/0166566 POLY GATE EXTENSION SOURCE TO BODY CONTACT
The present disclosure relates to semiconductor structures and, more particularly, to poly gate extension source to body contact structures and methods of...
2018/0166565 HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) DEVICE STRUCTURE
A high electron mobility transistor (HEMT) device structure is provided. The HEMT device structure includes a channel layer formed over a substrate and an...
2018/0166564 STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH BIPOLAR JUNCTION TRANSISTOR
A semiconductor device structure is provided. The semiconductor device structure includes a collector element formed in or over a semiconductor substrate. The...
2018/0166562 Thin Film Transistor, Manufacturing Method for Array Substrate, Array Substrate and Display Device
A thin film transistor, a manufacturing method for an array substrate, the array substrate, and a display device are provided. The manufacturing method for a...
2018/0166561 CONTACT STRUCTURE AND EXTENSION FORMATION FOR III-V NFET
FinFET devices including III-V fin structures and silicon-based source/drain regions are formed on a semiconductor substrate. Silicon is diffused into the...
2018/0166560 SEMICONDUCTOR STRUCTURE WITH PROTECTION LAYER
The method for forming a semiconductor structure includes forming a protection layer having a first portion and a second portion over a substrate and forming a...
2018/0166559 METHODS AND APPARATUS FOR THREE-DIMENSIONAL NONVOLATILE MEMORY
A method is provided that includes forming a word line above a substrate, the word line disposed in a first direction, the word line including a first portion...
2018/0166558 Internal Spacer Formation for Nanowire Semiconductor Devices
The present disclosure relates to a method of forming an internal spacer between nanowires in a semiconductor device. The method includes providing a...
2018/0166557 CASCODE CONFIGURED SEMICONDUCTOR COMPONENT
In accordance with an embodiment, a cascode connected semiconductor component and a method for manufacturing the cascode connected semiconductor component are...
2018/0166556 HIGH POWER GALLIUM NITRIDE ELECTRONICS USING MISCUT SUBSTRATES
A method of fabricating an electronic device includes providing a III-V substrate having a hexagonal crystal structure and a normal to a growth surface...
2018/0166555 Silicon Carbide Vertical MOSFET with Polycrystalline Silicon Channel Layer
A semiconductor device may include a semiconductor body of silicon carbide (SiC) and a field effect transistor. The field effect transistor has the...
2018/0166554 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
A semiconductor device includes: a first conductivity type semiconductor substrate made of silicon carbide; a second conductivity type body region in a device...
2018/0166553 Semiconductor Device with Air-Spacer
A method includes forming a gate structure on a substrate, forming a seal spacer covering a sidewall of the gate structure, forming a sacrificial spacer...
2018/0166552 METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECTRICAL JUNCTION AND DEVICES INCORPORATING...
An electrical device in which an interface layer is disposed in between and in contact with a conductor and a semiconductor.
2018/0166551 Multi-Gate Device and Method of Fabrication Thereof
A semiconductor device includes a source/drain feature disposed over a substrate. The source/drain feature includes a first nanowire, a second nanowire...
2018/0166550 FIELD EFFECT TRANSISTOR WITH DECOUPLED CHANNEL AND METHODS OF MANUFACTURING THE SAME
A field effect transistor (FET) for an nFET and/or a pFET device including a substrate and a fin including at least one channel region decoupled from the...
2018/0166549 SEMICONDUCTOR DEVICE
A semiconductor device including a semiconductor element, an upper-surface electrode provided on an upper surface of the semiconductor element, a plated layer...
2018/0166548 STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WITH GATE STRUCTURE
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a substrate, a dielectric layer...
2018/0166547 JUNCTION GATE FIELD-EFFECT TRANSISTOR (JFET) HAVING SOURCE/DRAIN AND GATE ISOLATION REGIONS
A junction gate field-effect transistor (JFET) includes a substrate, a source region formed in the substrate, a drain region formed in the substrate, a channel...
2018/0166546 SEMICONDUCTOR DEVICE WITH SURFACE INSULATING FILM
A semiconductor device of the present invention includes a semiconductor layer of a first conductivity type having a cell portion and an outer peripheral...
2018/0166545 SEMICONDUCTOR DEVICE WITH CAPPING STRUCTURE AND METHOD OF FORMING THE SAME
A semiconductor device is provided, which includes a substrate, a shallow trench isolation (STI), a gate dielectric structure, a capping structure and a gate...
2018/0166544 OXIDE SEMICONDUCTOR THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF
The present invention relates to an oxide semiconductor thin film transistor and a manufacturing method thereof, and the manufacturing method of the oxide...
2018/0166543 Semiconductor Device and a Method for Manufacturing a Semiconductor Device
A semiconductor device comprises a semiconductor substrate structure comprising a cell region and an edge termination region surrounding the cell region....
2018/0166542 SEMICONDUCTOR DEVICE
A semiconductor device including a plurality of lower electrodes on a substrate, the plurality of lower electrodes in a first direction and a second direction...
2018/0166541 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device is provided. The semiconductor device includes a n- type layer disposed at a first surface of a n+ type silicon carbide substrate and a...
2018/0166540 SEMICONDUCTOR DEVICE AND METHOD MANUFACTURING THE SAME
A semiconductor device may include an n- type layer disposed at a first surface of an n+ type silicon carbide substrate; a trench disposed at the n- type...
2018/0166539 SEMICONDUCTOR DEVICE AND METHOD MANUFACTURING THE SAME
A semiconductor device may include an n- type layer disposed at a first surface of an n+ type silicon carbide substrate; a p- type region, a p type region, an...
2018/0166538 SEMICONDUCTOR DEVICE AND METHOD MANUFACTURING THE SAME
A semiconductor device may include an n- type layer sequentially disposed at a first surface of an n+ type silicon carbide substrate; a p type region disposed...
2018/0166537 SEMICONDUCTOR DEVICE
An electron device having a channel layer made of graphene is disclosed. The electron device includes a graphene layer on a substrate, electrodes of source,...
2018/0166536 ACTIVE AND PASSIVE COMPONENTS WITH DEEP TRENCH ISOLATION STRUCTURES
The present disclosure relates to semiconductor structures and, more particularly, to active and passive radio frequency (RF) components with deep trench...
2018/0166535 Horizontal Nanowire Semiconductor Devices
The present disclosure relates to a method of forming a semiconductor device comprising horizontal nanowires. The method comprises depositing a multilayer...
2018/0166534 Method of Forming Internal Spacer for Nanowires
A method of forming a semiconductor device comprising horizontal nanowires is described. An example method involves providing a semiconductor structure...
2018/0166533 PROCESS TO ETCH SEMICONDUCTOR MATERIALS
The present disclosure describes a method which can selectively etch silicon from silicon/silicon-germanium stacks or silicon-germanium from ...
2018/0166532 METHOD FOR FABRICATING CAP LAYER ON AN EPITAXIAL LAYER
A method for fabricating semiconductor device is disclosed. First, a substrate is provided, and a gate structure is formed on the substrate. Next, a recess is...
2018/0166531 SYSTEM AND METHOD FOR EDGE TERMINATION OF SUPER-JUNCTION (SJ) DEVICES
The subject matter disclosed herein relates to super-junction (SJ) power devices and, more specifically, to edge termination techniques for SJ power devices. A...
2018/0166530 POWER SEMICONDUCTOR DEVICES HAVING GATE TRENCHES AND BURIED EDGE TERMINATIONS AND RELATED METHODS
Semiconductor devices include a semiconductor layer structure comprising a drift region that includes a wide band-gap semiconductor material. A shielding...
2018/0166529 SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME
A semiconductor memory devices and methods of fabricating the same are disclosed. For example, the semiconductor memory device including a semiconductor...
2018/0166528 MONOLAYER THIN FILM CAPACITOR AND METHOD FOR MANUFACTURING THE SAME
A monolayer thin film capacitor includes: a bottom electrode; a top electrode; a dielectric layer disposed between the bottom electrode and the top electrode;...
2018/0166527 METHOD FOR FABRICATING MAGNETIC CORE
A method for fabricating a magnetic core includes depositing a magnetic layer on a dielectric layer, forming a first photoresist layer on the magnetic layer...
2018/0166526 DISPLAY DEVICE
A display device includes: a substrate; a pad portion in a non-display area of the substrate and including a plurality of pads; a driver arranged at the pad...
2018/0166525 DISPLAY DEVICE
A display is provided. The display device includes a display area and a non-display area located around the display area; a base layer; an organic...
2018/0166524 DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME
A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is...
2018/0166523 LIGHT EMITTING DISPLAY APPARATUS
There is provided a light emitting display apparatus including at least a light emitting element and a thin film transistor (TFT) for driving the light...
2018/0166522 LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
Disclosed are a light emitting display device and a method of manufacturing the same, which prevent a lifetime of a light emitting layer from being shortened...
2018/0166521 DISPLAY DEVICE
A display device includes a thin film transistor, a gate insulting layer, an interlayer insulating layer, a data line, a spacer, and a pixel. The thin film...
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