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Patent # Description
2018/0166469 TRANSISTOR WITH SELF-ALIGNED SOURCE AND DRAIN CONTACTS AND METHOD OF MAKING SAME
A transistor includes an active region supported by a substrate and having a source region, a channel region and a drain region. A gate stack extends over the...
2018/0166468 Methods for Fabricating Thin Film Transistor and Array Substrate, Array Substrate and Display Device
Methods for fabricating a thin film transistor and an array substrate, an array substrate and a display device are provided, and the fabrication method of a...
2018/0166467 ARRAY SUBSTRATE, DISPLAY PANEL AND DISPLAY DEVICE
An array substrate, a display panel and a display device, including at least two gate lines in a display area, a gate driving circuit and at least two gate...
2018/0166466 PIXEL STRUCTURE AND FABRICATION METHOD THEREOF
A pixel structure and a fabrication method thereof are provided, and the fabrication method includes steps as follows. A gate and a scan line connected to the...
2018/0166465 ARRAY SUBSTRATE, DISPLAY PANEL AND DISPLAY DEVICE
There are provided an array substrate, a display panel and a display device. The array substrate includes a display area and a non-display area. The...
2018/0166464 Integrated Structures and Methods of Forming Vertically-Stacked Memory Cells
Some embodiments include an integrated structure having a stack of alternating dielectric levels and conductive levels, vertically-stacked memory cells within...
2018/0166463 CHARGE STORAGE REGION IN NON-VOLATILE MEMORY
Disclosed herein is a non-volatile storage system with memory cells having a charge storage region that may be configured to store a higher density of charges...
2018/0166462 Semiconductor Memory Devices Including Protrusion Pads
Disclosed is a semiconductor memory device may include a substrate including a cell array region and a contact region and a stacking structure including a...
2018/0166461 SEMICONDUCTOR DEVICE
A semiconductor device includes a plurality of cell gate electrodes on a semiconductor substrate. End portions of the cell gate electrodes include stepped-pad...
2018/0166460 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
A semiconductor device includes a stacked body, a columnar portion and a barrier film. The stacked body includes a plurality of insulating layers and a...
2018/0166459 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A method of manufacturing a semiconductor device, includes forming a fin structure on a main surface of semiconductor substrate, the fin structure including a...
2018/0166458 Split-Gate Flash Cell formed on Recessed Substrate
A semiconductor device and method of making the same are disclosed. The semiconductor device includes a metal-gate logic transistor formed in a first region of...
2018/0166457 Non-Volatile Memory Device Having Nanocrystal Floating Gate and Method of Fabricating Same
Non-volatile memory devices and methods of fabricating thereof are disclosed herein. An exemplary non-volatile memory device includes a heterostructure...
2018/0166456 INTEGRATION OF FLOATING GATE MEMORY AND LOGIC DEVICE IN REPLACEMENT GATE FLOW
After forming a first sacrificial gate stack over a portion of a first semiconductor fin located in a logic device region of a substrate, and a second...
2018/0166455 INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING THEREOF
A method for manufacturing an integrated circuit includes following steps. A substrate including a memory region and a core region is provided. At least two...
2018/0166454 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
A semiconductor device includes a substrate, a peripheral structure, a lower insulating layer, and a stack. The substrate includes a peripheral circuit region...
2018/0166453 Integrated Circuit Including a Ferroelectric Memory Cell and Manufacturing Method Thereof
An integrated circuit comprises a ferroelectric memory cell comprising a ferroelectric film comprising a binary oxide ferroelectric with the formula XO.sub.2...
2018/0166452 INTEGRATION OF A MEMORY TRANSISTOR INTO HIGH-K, METAL GATE CMOS PROCESS FLOW
A memory device that includes a non-volatile memory (NVM) transistor disposed in a first region of a substrate. The NVM transistor includes a first gate...
2018/0166451 METHOD FOR MANUFACTURING EMBEDDED NON-VOLATILE MEMORY
In a method for manufacturing a semiconductor device, a cell well, a logic well and a high voltage well are formed in a first, a second and a third regions of...
2018/0166450 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
A method of fabricating a semiconductor device. A cell area and a core area is defined in a substrate. A bit line structure disposed in the cell area is...
2018/0166449 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
A semiconductor device is provided. The semiconductor device includes a substrate which includes a cell region including first and second regions, and a peri...
2018/0166448 Strained-gate Engineered Dynamic Random Access Memory Including Ferroelectric Negative Capacitance Dielectrics...
A dynamic random access memory (DRAM) and a manufacturing method thereof are disclosed. A storage cell of the DRAM includes a FINFET and a capacitor. A gate of...
2018/0166447 SEMICONDUCTOR DEVICE
A semiconductor device includes a substrate, first, second and third structures disposed on the substrate and spaced apart from one another in a first...
2018/0166446 Compact Semiconductor Memory Device Having Reduced Number of Contacts, Methods of Operating and Methods of Making
An integrated circuit including a link or string of semiconductor memory cells, wherein each memory cell includes a floating body region for storing data. The...
2018/0166445 MEMORY CIRCUIT WITH THYRISTOR
A memory circuit with thyristor includes a plurality of memory cells. Each memory cell of the plurality of memory cells includes an access transistor and a...
2018/0166444 METHOD OF FORMING FIN SHAPE STRUCTURE
A fin shaped structure and a method of forming the same. The method includes providing a substrate having a first fin structure and a second fin structure....
2018/0166443 INTEGRATED CIRCUIT DEVICES
An integrated circuit device includes a fin-type active area extending on a substrate in a first direction, a first gate line and a second gate line extending...
2018/0166442 FINFET DEVICE WITH EPITAXIAL STRUCTURES THAT WRAP AROUND THE FINS AND THE METHOD OF FABRICATING THE SAME
A FinFET device is provided. The FinFET device includes a plurality of fin structures that protrude upwardly out of a dielectric isolation structure. The...
2018/0166441 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
A method for fabricating semiconductor device is disclosed. A substrate having a first transistor on a first region, a second transistor on a second region, a...
2018/0166440 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
A semiconductor device may include a substrate, a first doped region and a second doped region on the substrate, a base region on the first doped region, a...
2018/0166439 ESD PROTECTION CIRCUIT CELL
A protection cell for a cell library. The protection cell defines a protection circuit for an IC having a driving device with a first supply voltage Vdd1 and...
2018/0166438 INTEGRATED CIRCUITS WITH HIGH CURRENT CAPACITY AND METHODS FOR PRODUCING THE SAME
Integrated circuits and methods of producing integrated circuits are provided. In an exemplary embodiment, an integrated circuit includes a source and a drain...
2018/0166437 FinFET-Based ESD Devices and Methods for Forming the Same
A semiconductor device includes semiconductor fins on semiconductor strips on a substrate. The semiconductor fins are parallel to each other. A gate stack is...
2018/0166436 INSULATED GATE SEMICONDUCTOR DEVICE
An insulated gate semiconductor device includes a main insulated gate transistor having a gate electrode controlling a main current, a current-detecting...
2018/0166435 DISPLAY DEVICE
A display device includes: a first substrate including display and non-display areas; gate and data lines on the first substrate and crossing each other; an...
2018/0166434 METHOD FOR FILLING PATTERNS
A method for filling patterns includes the steps of: providing a substrate having a cell region defined thereon; forming main patterns on the substrate and...
2018/0166433 METHOD OF PROVIDING LAYOUT DESIGN OF SRAM CELL
A method of providing a layout design of an SRAM cell includes: providing a substrate layout comprising a first oxide diffusion area, a second oxide diffusion...
2018/0166432 INTEGRATED CIRCUIT FOR REDUCING OHMIC DROP IN POWER RAILS
An integrated circuit includes a plurality of power rail pairs and a circuit chain. Each of the plurality of power rail pairs includes one of a plurality of...
2018/0166431 SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF THE SAME
A semiconductor device includes at least one first gate strip, at least one second gate strip, at least one first conductive line and at least one first...
2018/0166430 SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS
A semiconductor device, including a first semiconductor chip including a first substrate having a semiconductor larger in bandgap than silicon, the first...
2018/0166429 Mass Transfer Of Micro Structures Using Adhesives
Mass transfer of micro structures are effected from one substrate to another using adhesives. In the context of an integrated micro LED display, a micro LED...
2018/0166428 LIGHT SOURCE COMPRISING A NUMBER OF SEMI-CONDUCTOR COMPONENTS
A light source includes a plurality of semiconductor components, wherein a semiconductor component includes a plurality of light-emitting diodes, the diodes...
2018/0166427 PACKAGE STRUCTURE WITH DUMMY DIE
A package structure and method for forming the same are provided. The package structure includes a package component, and a device die formed over the package...
2018/0166426 SEMICONDUCTOR STRUCTURE AND A MANUFACTURING METHOD THEREOF
A semiconductor structure includes a first package including a substrate and a die disposed over the substrate and electrically connected to the substrate by a...
2018/0166425 LIGHT-EMITTING DIODE (LED) DEVICE
A light-emitting diode (LED) device configured to provide a multi-color display includes a plurality of light-emitting cells at least partially defined by a...
2018/0166424 LIGHT-EMITTING DIODE (LED) DEVICE FOR REALIZING MULTI-COLORS
A light-emitting diode (LED) device includes a plurality of light-emitting structures spaced apart from each other; a plurality of electrode layers on first...
2018/0166423 COMMON-SOURCE PACKAGING STRUCTURE
A common-source type package structure is provided in the present invention. In the package structure, an integrated component body is configured a...
2018/0166422 COMMON-SOURCE PACKAGING STRUCTURE
A common-source type package structure is provided in the present invention. In the package structure, an integrated component body is configured a...
2018/0166421 Package-on-Package Structure with Epoxy Flux Residue
A structure includes a first package and a second package. The second package is coupled to the first package by one or more connectors. Epoxy flux residue is...
2018/0166420 SEMICONDUCTOR PACKAGE AND FABRICATION METHOD THEREOF
A semiconductor package includes a semiconductor chip in which a side step or a side slope formed toward an inactive surface from an active surface is included...
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