Easy To Use Patents Search & Patent Lawyer Directory

At Patents you can conduct a Patent Search, File a Patent Application, find a Patent Attorney, or search available technology through our Patent Exchange. Patents are available using simple keyword or date criteria. If you are looking to hire a patent attorney, you've come to the right place. Protect your idea and hire a patent lawyer.

Searching:





Search by keyword, patent number, inventor, assignee, city or state:




Patent # Description
2018/0174848 HIGH PRESSURE LOW THERMAL BUDGE HIGH-K POST ANNEALING PROCESS
A method of fabricating high-k/metal gate semiconductor device by incorporating an enhanced annealing process is provided. The enhanced annealing process in...
2018/0174847 METHOD OF LATERAL OXIDATION OF NFET AND PFET HIGH-K GATE STACKS
A method for fabricating a semiconductor circuit includes obtaining a semiconductor structure having a gate stack of material layers including a high-k...
2018/0174846 SEMICONDUCTOR STRUCTURE HAVING LOW-K SPACER AND METHOD OF MANUFACTURING THE SAME
The present disclosure provides a semiconductor structure, including a semiconductor fin, a metal gate over the semiconductor fin, and a sidewall spacer...
2018/0174845 SEMICONDUCTOR DEVICE HAVING BURIED GATE STRUCTURE AND METHOD FOR FABRICATING THE SAME
A method for fabricating a semiconductor device includes: forming a gate trench in a semiconductor substrate; forming a gate dielectric layer over a bottom...
2018/0174844 Hybrid III-V Technology to Support Multiple Supply Voltages and Off State Currents on Same Chip
Techniques for forming dual III-V semiconductor channel materials to enable fabrication of different device types on the same chip/wafer are provided. In one...
2018/0174843 SPUTTER ETCH MATERIAL SELECTIVITY
A method of etching a workpiece comprising two or more materials is disclosed. The method involves using physical sputtering as the etching method where the...
2018/0174842 Quantum Doping Method and Use in Fabrication of Nanoscale Electronic Devices
A novel doping technology for semiconductor wafers has been developed, referred to as a "quantum doping" process that permits the deposition of only a fixed,...
2018/0174841 METHOD FOR MANUFACTURING A LAYER STACK FROM A P+-SUBSTRATE, A P- -LAYER, AN N- -LAYER AND A THIRD LAYER
A method for manufacturing a layer stack having a p.sup.+-substrate, a p.sup.--layer, an n.sup.--layer and a third layer. A first partial stack and a second...
2018/0174840 Forming a Metal Contact Layer on Silicon Carbide and Semiconductor Device with Metal Contact Structure
A semiconductor device includes a silicon carbide semiconductor body and a metal contact structure. Interface particles including a silicide kernel and a...
2018/0174839 Lithography Patterning with Sub-Resolution Assistant Patterns and Off-Axis Illumination
A photolithography system includes a substrate stage for holding a workpiece, and a mask having main patterns and sub-resolution assistant patterns. The system...
2018/0174838 Film Forming Method, Boron Film, and Film Forming Apparatus
There is provided a method of forming a boron film on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a...
2018/0174837 MATERIAL COMPOSITION AND PROCESS FOR SUBSTRATE MODIFICATION
Provided is a material composition and method for substrate modification. A substrate is patterned to include a plurality of features. The plurality of...
2018/0174836 LASER POLYCRYSTALLIZATION APPARATUS
A laser polycrystallization apparatus including: a light source for emitting a laser beam; a diffraction grating for receiving the laser beam from the light...
2018/0174835 METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND SILICON CARBIDE SEMICONDUCTOR DEVICE
A method of manufacturing a silicon carbide semiconductor device includes, in order: polishing a silicon carbide semiconductor base body from a second main...
2018/0174834 METHOD OF PREPARING DIAMOND SUBSTRATES FOR CVD NANOMETRIC DELTA DOPING
A method of preparing a diamond crystal substrate for epitaxial deposition thereupon of a delta doping layer includes preparing an atomically smooth, undamaged...
2018/0174833 Selective Oxidation of Transition Metal Nitride Layers Within Compound Semiconductor Device Structures
Methods for integrating transition metal oxide (TMO) layers into a compound semiconductor device structure via selective oxidation of transition metal nitride...
2018/0174832 METHOD AND DEVICE FOR COATING SUBSTRATES
A method and device for coating a substrate with a film layer. The device comprises application means for applying a thermoplastic film layer material and...
2018/0174831 HARDMASK COMPOSITION AND METHODS THEREOF
Provided is a material composition and method for that includes forming a silicon-based resin over a substrate. In various embodiments, the silicon-based resin...
2018/0174830 MATERIAL COMPOSITION AND METHODS THEREOF
Provided is a material composition and method that includes forming a patterned resist layer on a substrate, where the patterned resist layer has a first line...
2018/0174829 CMP Cleaning System and Method
A cleaning apparatus and a method of using the cleaning apparatus are provided. The method includes first moving a pencil pad into contact with a top surface...
2018/0174828 Patterning Process with Silicon Mask Layer
A lithography method is provided in accordance with some embodiments. The lithography method includes forming an under layer on a substrate; forming a...
2018/0174827 TEMPLATE FOR IMPRINT LITHOGRAPHY INCLUDING A RECESSION, AN APPARATUS OF USING THE TEMPLATE, AND A METHOD OF...
A template for imprint lithography can include a body. The body can include a base surface and have a recession extending from the base surface lying along a...
2018/0174826 SEQUENTIAL INFILTRATION SYNTHESIS APPARATUS
The disclosure relates to a sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to accommodate at least one...
2018/0174825 INTEGRATED SYSTEM AND METHOD FOR SOURCE/DRAIN ENGINEERING
Implementations described herein generally provide a method of processing a substrate. Specifically, the methods described are used for cleaning and etching...
2018/0174824 PROCESS OF FORMING EPITAXIAL SUBSTRATE AND SEMICONDUCTOR DEVICE PROVIDED ON THE SAME
A process of forming a nucleus forming layer in a nitride semiconductor epitaxial substrate is disclosed. The process includes steps of: growing a lower layer...
2018/0174823 MANUFACTURING METHOD OF GALLIUM NITRIDE SUBSTRATE
A method of manufacturing a gallium nitride substrate, the method including forming a first buffer layer on a silicon substrate such that the first buffer...
2018/0174822 METHOD OF FORMING NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE
A method of fabricating a nitride semiconductor substrate including forming a buffer layer on a surface of a growth substrate, growing a first nitride...
2018/0174821 NANOWIRE FIELD EFFECT TRANSISTOR DEVICE HAVING A REPLACEMENT GATE
A device includes a substrate, a buffer layer, a nanowire, a gate structure, and a remnant of a sacrificial layer. The buffer layer is above the substrate. The...
2018/0174820 Plasma Enhanced Atomic Layer Deposition
According to one example, a process includes performing a first plurality of layer deposition cycles of a deposition process on a substrate, and after...
2018/0174819 SEGMENTED LINEAR ION TRAP FOR ENHANCED ION ACTIVATION AND STORAGE
A linear ion trap includes at least two discrete trapping regions for processing ions and at least one gas pulse valve for applying pulses of gas to...
2018/0174818 QUADRUPOLE ROD ASSEMBLY
A quadrupole rod assembly includes a plurality of electrically conductive rods, electrically insulating rings coaxially surrounding the rods, and clamping...
2018/0174817 MASS FILTER HAVING EXTENDED OPERATIONAL LIFETIME
A mass filter is disclosed having at least one electrode (42-48) comprising an aperture (43) or recess. Voltages are applied to the electrodes (42-48) of the...
2018/0174816 Multi-Reflecting Mass Spectrometer with High Throughput
Method and embodiments are provided for tandem mass spectrometer designed for extremely large charge throughput up to 1E+10ion/sec. In one operation mode, the...
2018/0174815 MASS SPECTROMETER WITH LASER SYSTEM FOR PRODUCING PHOTONS OF DIFFERENT ENERGIES
The invention relates to mass spectrometers with optically pumped lasers, whose laser light can be used for ionization by laser desorption, for the ...
2018/0174814 Determination of Isobaric Interferences in a Mass Spectrometer
Methods of determining isobaric interference during mass analysis in a mass spectrometer are provided. The methods comprise comparing interference-free...
2018/0174813 MASS SPECTROMETER AND METHOD APPLIED THEREBY FOR REDUCING ION LOSS AND SUCCEEDING STAGE VACUUM LOAD
The disclosure relates to a mass spectrometer and a method applied thereby for reducing ion loss and succeeding stage vacuum load. The mass spectrometer...
2018/0174812 ION GUIDING DEVICE
The disclosure relates to an ion guiding device, including which comprises two sets of electrodes extending along a certain space axis, a first power supply...
2018/0174811 MASS SPECTROMETRY DEVICE
The mass spectrometry device includes: a sample container for containing a sample; a heater for heating the sample container; an ion source for ionizing the...
2018/0174810 CHARGED PARTICLE DETECTOR
A charged particle detector according to the embodiment is provided with an MCP and a PD arranged with a focus electrode interposed therebetween in order to...
2018/0174809 GAS FLOW CONTROL
The present invention relates to a gas inlet system for an analytical apparatus. The gas inlet system comprises switchable flow restrictions for regulating gas...
2018/0174808 SPUTTERING APPARATUS AND SPUTTERING METHOD
A sputtering apparatus has a vacuum chamber capable of arranging a target material and a substrate therein so as to face each other, a DC power supply capable...
2018/0174807 PLASMA GENERATION FOR ION IMPLANTER
An ion implanter comprises a dissociation chamber in the ion implanter. The dissociation chamber has an input port for receiving a gas and an output port for...
2018/0174806 PLASMA PROCESSING APPARATUS
Disclosed is a plasma processing apparatus including: a processing container; a placing table provided in the processing container and configured to place a...
2018/0174805 PLASMA PROCESSING APPARATUS
A plasma processing apparatus includes a pedestal to receive a substrate thereon; a temperature control mechanism provided in the pedestal; a heat transfer gas...
2018/0174804 COMPRESSION MEMBER FOR USE IN SHOWERHEAD ELECTRODE ASSEMBLY
A compression member for use in a showerhead electrode assembly of a capacitively coupled plasma chamber. The member applies a compression force to a portion...
2018/0174803 PLASMA POLYMERIZATION COATING APPARATUS
Introduced here is a plasma polymerization apparatus. Example embodiments include a reaction chamber in a shape substantially symmetrical to a central axis....
2018/0174802 DIELECTRIC WINDOW, PLASMA SYSTEM THEREWITH, METHOD OF FABRICATING DIELECTRIC WINDOW AND METHOD OF MANUFACTURING...
A dielectric window, a plasma system including the same, a method of fabricating the same, and a method of manufacturing a semiconductor device are provided....
2018/0174801 APPARATUSES AND METHODS FOR SURFACE TREATMENT
According to an exemplary embodiment, a surface treatment unit comprises a chamber, a process gas inlet configured to allow process gas to enter the chamber, a...
2018/0174800 PLASMA DEVICE
The plasma device includes a vessel with the first and second molds facing to each other. A work is sealed in the closed first and second molds. The work...
2018/0174799 INDUCTIVELY COUPLED PLASMA DEVICE
The present disclosure provides an inductively coupled plasma device, comprising a reaction chamber, a dielectric coupling plate, and a coil above the...
← Previous | 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 169 170 171 172 173 174 175 176 177 178 179 | Next →

File A Patent Application

  • Protect your idea -- Don't let someone else file first. Learn more.

  • 3 Easy Steps -- Complete Form, application Review, and File. See our process.

  • Attorney Review -- Have your application reviewed by a Patent Attorney. See what's included.