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Patent # Description
2018/0182799 OPTICAL DETECTOR AND IMAGING APPARATUS
An optical detector includes a sensor device chip including a substrate and a sensor device that is provided at a front face side of the substrate and detects...
2018/0182798 IMAGING SENSOR
An imaging sensor comprises: an array of light-detecting elements, wherein each light-detecting element in the array of light-detecting elements is arranged in...
2018/0182797 SYSTEM-IN-PACKAGE IMAGE SENSOR
A method of image sensor package fabrication includes forming a cavity in a ceramic substrate, and placing an image sensor in the cavity in the ceramic...
2018/0182796 Sensor System
The present invention relates to a sensor system. The sensor system comprises a component carrier and a sensor having a control unit and a sensor unit. At...
2018/0182795 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes a substrate, first and second recesses spaced...
2018/0182794 IMAGE SENSORS
An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a...
2018/0182793 MANUFACTURING METHOD OF IMAGING DEVICE AND IMAGING SYSTEM
A manufacturing method of an imaging device includes ion-implanting impurity ions of a second conductivity type into a first region and a second region using a...
2018/0182792 PROTECTION RING FOR IMAGE SENSORS
Some embodiments relate to a pixel sensor array including a plurality of photosensors arranged in a semiconductor substrate. A protection ring circumscribes an...
2018/0182791 CAPACITOR, IMAGE SENSOR CIRCUIT AND FABRICATION METHODS THEREOF
A capacitor, an image sensor circuit and fabricating methods are provided. The method includes providing a base substrate including a trench region and a body...
2018/0182790 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
The pixel characteristics are prevented from being degraded due to diffusion of electrons and Fe (iron) from the surface of an element isolation trench formed...
2018/0182789 SOLID-STATE IMAGE SENSING DEVICE, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING SOLID-STATE IMAGE SENSING DEVICE
The present technology relates to a solid-state image sensing device for preventing a reduction in light receiving sensitivity of an avalanche photodiode, an...
2018/0182788 PHOTOSENSITIVE PIXEL STRUCTURE WITH FRONT SIDE COATING
The present invention refers to a photosensitive pixel structure (10) comprising a substrate layer (1 5) and an interface layer (50), wherein the interface...
2018/0182787 TFT SUBSTRATE MANUFACTURING METHOD
The present invention relates to a TFT substrate manufacturing method. The TFT substrate manufacturing method includes: Step 10: applying a first mask-based...
2018/0182786 METHOD FOR MANUFACTURING TFT SUBSTRATE
A method for manufacturing a TFT substrate is disclosed. The TFT substrate includes a drive TFT region and a display TFT region. The drive TFT region and the...
2018/0182785 A METHOD FOR MANUFACTURING LTPS ARRAY SUBSTRATE
The present invention provides a manufacturing method of LTPS array substrate, wherein the LTPS array substrate contains at least a metal mask layer, a buffer...
2018/0182784 TRANSISTOR SUBSTRATE AND DISPLAY DEVICE
In a transistor substrate of a display device, a plurality of signal lines to which any one of drive signals of a gate signal and a video signal is supplied...
2018/0182783 THIN FILM TRANSISTORS, ARRAYS SUBSTRATES, AND MANUFACTURING METHODS
The present disclosure relates to a TFT includes an active layer formed on a substrate, wherein the active layer includes a first semiconductor layer and a...
2018/0182782 ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
The present application discloses an array substrate and a method of manufacturing the same. The array substrate includes a first insulating layer disposed on...
2018/0182781 ARRAY SUBSTRATE AND METHOD OF MOUNTING INTEGRATED CIRCUIT USING THE SAME
An electronic device, including an array substrate, a pad portion disposed on the array substrate, and an integrated circuit disposed on the pad portion and...
2018/0182780 DISPLAY DEVICE
By applying an AC pulse to a gate of a transistor which easily deteriorates, a shift in threshold voltage of the transistor is suppressed. However, in a case...
2018/0182779 TFT ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF
The present invention provides a TFT array substrate and a manufacturing method thereof. The TFT array substrate is structured such that a source electrode...
2018/0182778 STRUCTURE AND METHOD FOR FULLY DEPLETED SILICON ON INSULATOR STRUCTURE FOR THRESHOLD VOLTAGE MODIFICATION
A method for fabricating a fully depleted silicon on insulator (FDSOI) device is described. A charge trapping layer in a buried oxide layer is provided on a...
2018/0182777 3D NAND HIGH ASPECT RATIO STRUCTURE ETCH
Embodiments of the present disclosure provide methods for forming features in a film stack. The film stack may be utilized to form stair-like structures with...
2018/0182776 VERTICAL MEMORY DEVICES
A vertical memory device includes a mold structure and channels. The mold structure includes gate electrodes and insulation patterns arranged on a substrate in...
2018/0182775 VERTICAL SEMICONDUCTOR DEVICES
A vertical semiconductor device includes odd and even cell blocks, and odd and even block pad structures. Each of the odd cell blocks includes first conductive...
2018/0182774 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
Characteristics of a semiconductor device having a nonvolatile memory are improved. A high dielectric constant film is provided on an insulating film between a...
2018/0182773 SEMICONDUCTOR MEMORY DEVICE
According to one embodiment, a semiconductor memory device includes a first conductive layer, a first semiconductor body, a second semiconductor body, a first...
2018/0182772 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
In a method of manufacturing a semiconductor device, the semiconductor device includes a non-volatile memory formed in a memory cell area and a ring structure...
2018/0182771 THREE-DIMENSIONAL MEMORY DEVICES CONTAINING INTER-TIER DUMMY MEMORY CELLS AND METHODS OF MAKING THE SAME
A three-dimensional memory device includes a first alternating stack of first insulating layers and first electrically conductive layers, a first memory...
2018/0182770 DAMASCENE OXYGEN BARRIER AND HYDROGEN BARRIER FOR FERROELECTRIC RANDOM-ACCESS MEMORY
Disclosed herein is an apparatus that includes a ferrocapacitor disposed on a damascene barrier film. The damascene barrier film includes a hydrogen barrier...
2018/0182769 FLASH MEMORY STRUCTURE AND METHOD OF MANUFACTURING THE SAME
A flash memory structure and a method of making the same are provided. The flash memory structure comprises a substrate, a source, a drain, a tunnel isolation...
2018/0182768 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
After a dummy control gate electrode and a memory gate electrode are formed and an interlayer insulating film is formed so as to cover the gate electrodes, the...
2018/0182767 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor device in which the cell size is small and disturbance in reading operation is suppressed, and a method for manufacturing the semiconductor...
2018/0182766 STATIC RANDOM-ACCESS MEMORY DEVICE
The present invention proposes a static random-access memory device (SRAM). The static random-access memory device is composed of two P-channel gates of...
2018/0182765 Methods of Forming Memory Arrays
Some embodiments include a method of forming a memory array. A wordline is formed to extend along a first direction, and along a rail of semiconductor...
2018/0182764 Memory Arrays Comprising Ferroelectric Capacitors
Some embodiments include a memory array which has rows of fins. Each fin has a first pedestal, a second pedestal and a trough between the first and second...
2018/0182763 Memory Arrays
Some embodiments include a memory array having memory cells arranged in rows and columns. The rows extend along a first direction and the columns extend along...
2018/0182762 Memory Arrays
Some embodiments include a memory array having rows of fins. Each fin has at least one channel region. Each channel region extends from a first source/drain...
2018/0182761 MEMORY DEVICES, MEMORY ARRAYS, AND METHODS OF FORMING MEMORY ARRAYS
Some embodiments include a memory device. The device has a fin with a first source/drain region, a second source/drain region and a channel region. The first...
2018/0182760 DIELECTRIC STRUCTURE AND MANUFACTURING METHOD THEREOF AND MEMORY STRUCTURE
A dielectric structure and a manufacturing method thereof and a memory structure are provided. The dielectric structure includes a dielectric layer and a...
2018/0182759 Stacked Three-Dimensional Arrays of Two Terminal Nanotube Switching Devices
Under one aspect, a non-volatile nanotube diode device includes first and second terminals; a semiconductor element including a cathode and an anode, and...
2018/0182758 SEMICONDUCTOR DEVICE
A semiconductor device includes circuit active fin lines and circuit gate lines intersecting each other in a circuit active region, dummy active fin lines and...
2018/0182757 TALL SINGLE-FIN FIN-TYPE FIELD EFFECT TRANSISTOR STRUCTURES AND METHODS
Disclosed are methods of forming improved fin-type field effect transistor (FINFET) structures and, particularly, relatively tall single-fin FINFET structures...
2018/0182756 INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME
An integrated circuit (IC) device includes a first and a second fin-type active region protruding from a first region and a second region, respectively, of a...
2018/0182755 Conductivity Modulated Drain Extended MOSFET
An integrated circuit is fabricated on a semiconductor substrate. An insulated gate bipolar transistor (IGBT) is formed upon the semiconductor substrate in...
2018/0182754 SEMICONDUCTOR DEVICE
A semiconductor device that allows easy hole extraction is provided. The semiconductor device includes: a semiconductor substrate having drift and base...
2018/0182753 FIN-SHAPED FIELD EFFECT TRANSISTOR AND CAPACITOR STRUCTURES
A fin-shaped field-effect transistor device is provided. The fin-shaped field effect transistor device may include a semiconductor substrate having a top and a...
2018/0182752 SUPER CMOS DEVICES ON A MICROELECTRONICS SYSTEM
A low cost IC solution is disclosed to provide Super CMOS microelectronics macros. Hereinafter, the Super CMOS or Schottky CMOS all refer to SCMOS. The SCMOS...
2018/0182751 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A semiconductor device of the present invention includes, in a region 1C, a top electrode made by a semiconductor layer of an SOI substrate, a capacitive...
2018/0182750 Controlled Resistance Integrated Snubber for Power Switching Device
A semiconductor substrate has a main surface, a rear surface, an active device region, and an inactive region adjacent the active device region. Doped source,...
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