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Patent # Description
2018/0182648 Heating Device
A heating device includes: a baseplate; a faceplate provided above the baseplate, the faceplate including a film heater configured to heat a wafer mounted on...
2018/0182647 PLASMA PROCESSING APPARATUS
A plasma processing apparatus including an electrostatic chuck supporting a wafer; a focus ring disposed to surround an outer circumferential surface of the...
2018/0182646 SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING METHOD
A substrate processing of the present invention includes a supplying unit which supplies a process liquid containing a sublimable substance in a molten state...
2018/0182645 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
A substrate processing apparatus has a base part facing a surface of a rotation table, and the base part is equipped with a plate member which is rotated by a...
2018/0182644 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
A compact and high-reliability semiconductor device is implemented. The bonding wires situated in the vicinity of a gate, and the bonding wires situated in the...
2018/0182643 Semiconductor Module Cooling System
A cooling apparatus includes a discrete module and a plastic housing. The discrete module incudes a semiconductor die encapsulated by a mold compound, a...
2018/0182642 QFN PIN ROUTING THRU LEAD FRAME ETCHING
A multi-level leadframe including three bonding levels and one exposed level. Each of the three bonding levels and the one exposed level is positioned in a...
2018/0182641 METHOD OF TREATING SILICON WAFERS TO HAVE INTRINSIC GETTERING AND GATE OXIDE INTEGRITY YIELD
The disclosure is directed to a method to recover the gate oxide integrity yield of a silicon wafer after rapid thermal anneal in an ambient atmosphere...
2018/0182640 PROCESS FOR THE MANUFACTURE OF A SEMICONDUCTOR ELEMENT COMPRISING A LAYER FOR TRAPPING CHARGES
A process for the manufacture of a semiconductor element includes a stage of rapid heat treatment of a substrate comprising a charge-trapping layer, which is...
2018/0182639 Processing Stacked Substrates
Representative implementations provide techniques for processing integrated circuit (IC) dies and related devices, in preparation for stacking and bonding the...
2018/0182638 METHOD AND APPARATUS FOR SUBSTRATE PROCESSING
A substrate processing method according to exemplary embodiments includes bringing removal solution obtained by mixing a nitric acid, a strong acid stronger...
2018/0182637 TECHNIQUES FOR PROCESSING SUBSTRATES USING DIRECTIONAL REACTIVE ION ETCHING
A method of treating a substrate includes directing ions to the substrate along at least one non-zero angle with respect to a perpendicular to a substrate...
2018/0182636 Etch Rate Modulation Through Ion Implantation
As etching processes become more aggressive, increased etch resistivity of the hard mask is desirable. Methods of modulating the etch rate of the mask and...
2018/0182635 FOCUS RING AND SUBSTRATE PROCESSING APPARATUS
A focus ring that surrounds a periphery of a substrate placed on a stage in a processing chamber of a substrate processing apparatus includes a lower surface...
2018/0182634 ATOMIC LAYER ETCHING METHODS AND APPARATUS
A method for performing atomic layer etching of a surface of a substrate is provided, including: performing a surface conversion operation by exposing the...
2018/0182633 SYSTEMS AND METHODS FOR ANISOTROPIC MATERIAL BREAKTHROUGH
Processing methods may be performed to remove unwanted materials from a substrate, such as a native oxide material. The methods may include forming an inert...
2018/0182632 Method of Feature Exaction from Time-series of Spectra to Control Endpoint of Process
Methods and systems for using a time-series of spectra to identify endpoint of an etch process. One method includes accessing a virtual carpet that is formed...
2018/0182631 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
In a split-gate-type MONOS memory, increase in a defective rate due to variation in a gate length of a memory gate electrode is prevented, and reliability of a...
2018/0182630 Femtosecond Laser-Induced Formation Of Submicrometer Spikes On A Semiconductor Substrate
The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short...
2018/0182629 Forming Recombination Centers in a Semiconductor Device
Disclosed is a method. The method includes implanting recombination center particles into a semiconductor body via at least one contact hole in an insulation...
2018/0182628 SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING METHOD
Disclosed are a substrate treating apparatus and a substrate treating method. The substrate treating apparatus includes a chamber providing an interior space...
2018/0182627 METHOD AND APPARATUS FOR DEPOSITING A MONOLAYER ON A THREE DIMENSIONAL STRUCTURE
In one embodiment, a processing apparatus may include a plasma chamber configured to generate a plasma; a process chamber adjacent the plasma chamber and...
2018/0182626 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
A semiconductor device and a fabrication method are provided. The fabrication method includes providing a base substrate including a core region having a first...
2018/0182625 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A method of manufacturing a semiconductor device includes: forming a light absorbing layer on a front surface of a semiconductor substrate or in the...
2018/0182624 IMPURITY DIFFUSION AGENT COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE
A diffusion agent composition that can be evenly applied onto the whole area of an inner surface of the fine voids, whereby boron can be well and uniformly...
2018/0182623 METHOD OF FORMING FINE PATTERNS OF A SEMICONDUCTOR DEVICE
A method of forming fine patterns includes forming an upper mask layer on a substrate, forming preliminary mask patterns on the upper mask layer, and forming...
2018/0182622 METHOD MAKING IT POSSIBLE TO OBTAIN ON A CRYSTALLINE SUBSTRATE A SEMI-POLAR LAYER OF NITRIDE OBTAINED WITH AT...
A method making it possible to obtain, on an upper surface of a crystalline substrate, a semipolar layer of nitride material comprising any one from among...
2018/0182621 METHOD OF MANUFACTURING SWITCHING ELEMENT
A method of manufacturing a switching element includes forming a recessed portion in a surface of a GaN semiconductor substrate in which a first n-type...
2018/0182620 METHOD AND SYSTEM FOR VERTICAL POWER DEVICES
A method of forming a semiconductor device includes providing an engineered substrate. The engineered substrate includes a polycrystalline ceramic core, a...
2018/0182619 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A technique capable of forming a side wall of a gate electrode having high resistance-to-etching and low leakage current is provided. A method of manufacturing...
2018/0182618 METHOD OF FORMING A STRUCTURE ON A SUBSTRATE
The invention relates to a method of providing a structure by depositing a layer on a substrate in a reactor. The method comprising: introducing a silicon...
2018/0182617 METHOD FOR MANUFACTURING RESTORED SUBSTRATE AND METHOD FOR MANUFACTURING LIGHT EMITTING ELEMENT
A method for manufacturing a restored substrate includes: removing a nitride semiconductor layer from a stacked-layer in which the nitride semiconductor layer...
2018/0182616 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
A substrate processing method according to an embodiment includes an etching process, a temperature-difference forming process, and a rinsing process. The...
2018/0182615 PRODUCTION METHOD FOR SEMICONDUCTOR STRUCTURE AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE
There are provided a method for producing a semiconductor structure exhibiting excellent crystallinity by preventing the occurrence of a strain, and a method...
2018/0182614 METHOD OF DEPOSITING AND ETCHING SI-CONTAINING FILM
A method of filling recesses or grooves on a patterned surface with a layer of film, by combining depositing a film by PEALD/PPECVD on the patterned surface...
2018/0182613 METHOD OF FORMING A STRUCTURE ON A SUBSTRATE
The invention relates to depositing a layer on a substrate in a reactor, by: introducing a first precursor comprising a silicon halide in the reactor;...
2018/0182612 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
An abnormal processing can be appropriately detected in a processing of supplying a preset gas to a substrate as a processing target. A hydrophobizing unit U5...
2018/0182611 THERMAL TREATMENT APPARATUS, THERMAL TREATMENT METHOD, AND NON-TRANSITORY COMPUTER STORAGE MEDIUM
A thermal treatment apparatus including a hot plate which heats a substrate mounted thereon, in a treatment chamber including a lid body covering a surface to...
2018/0182610 SUBSTRATE CLEANING METHOD, SUBSTRATE CLEANING SYSTEM, AND MEMORY MEDIUM
A method for cleaning a substrate includes supplying to a substrate a film-forming processing liquid which includes a volatile component and forms a film on...
2018/0182609 ULTRAVIOLET LIGHT-GENERATING TARGET AND METHOD FOR MANUFACTURING THE SAME, AND ELECTRON BEAM-EXCITED...
An ultraviolet light-generating target comprising a substrate transmitting ultraviolet light; and a light-emitting layer provided on the substrate and emitting...
2018/0182608 TARGET FOR ULTRAVIOLET LIGHT GENERATION, AND METHOD FOR MANUFACTURING SAME
A target for ultraviolet light generation 20A includes a sapphire substrate 21 that transmits ultraviolet light UV, an interlayer 22 that is in contact with...
2018/0182607 HIGH POWER LOW PRESSURE UV BULB WITH PLASMA RESISTANT COATING
An envelope of an ultraviolet (UV) bulb comprises a tube of UV transmissive material configured to contain a UV emissive material and a plasma resistant...
2018/0182606 ION MOBILITY SPECTROMETER
The present disclosure provides an ion mobility spectrometer, which comprises: a power supply circuit, configured to provide a power supply voltage; a corona...
2018/0182605 ALIGNING ION OPTICS BY APERTURE SIGHTING
A mass spectrometry system includes an ion optics stack defining a central longitudinal axis. The ion optics stack includes a circular lens aperture of a first...
2018/0182604 IONIZATION CHAMBER HAVING A POTENTIAL-WELL FOR ION TRAPPING AND ION COMPRESSION
An ionization chamber. The ionization chamber includes a vessel, an ionization source, an ion gate, and a mid-ring electrode. The vessel defines an ionization...
2018/0182603 SYSTEMS AND METHODS FOR CALIBRATION, VERIFICATION, AND SENSITIVITY CHECKS FOR DETECTORS
The present disclosure is directed to methods and systems for calibration, calibration verification, and sensitivity checks for a detector. The methods and...
2018/0182602 A Phototube and Method of Making It
A phototube suitable for detecting a photon, comprising: an electron ejector configured for emitting electrons in response to an incident photon; a detector...
2018/0182601 SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY...
Described herein is a technique capable of uniformly processing substrates. According to the technique described herein, there is provided a substrate...
2018/0182600 PLASMA SYSTEM AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE USING THE SAME
A plasma system includes an electrode and an RF power supply unit supplying an RF power to the electrode to generate a plasma on the electrode. The RF power is...
2018/0182599 PLASMA REACTOR WITH NON-POWER-ABSORBING DIELECTRIC GAS SHOWER PLATE ASSEMBLY
A gas distribution plate for a plasma reactor has a dielectric front plate and a dielectric back plate bonded together, with gas injection orifices extending...
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