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Patent # Description
2018/0190850 GROUP-IV SOLAR CELL STRUCTURE USING GROUP-IV or III-V HETEROSTRUCTURES
Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single-junction or multijunction solar cells, with at least a...
2018/0190849 SOLAR CELL HAVING A PLURALITY OF SUB-CELLS COUPLED BY CELL LEVEL INTERCONNECTION
Methods of fabricating solar cells having a plurality of sub-cells coupled by cell level interconnection, and the resulting solar cells, are described herein....
2018/0190848 WAVELENGTH CONVERSION FILTER, MANUFACTURING METHOD THEREOF, AND SOLAR CELL MODULE
A wavelength conversion filter, includes: a wavelength conversion layer in which a wavelength conversion material is dispersed in a transparent resin base...
2018/0190847 NON-ORTHOGONALLY PATTERNED MONOLITHICALLY INTEGRATED THIN FILM PV
A monolithically integrated flexible thin film photovoltaic device consisting of a plurality of sides having at least one side that is not orthogonal to the...
2018/0190846 Protective Glass for Solar Cell Module and Manufacturing Method for the Same
The present disclosure provides a protective glass for a solar cell module having improved power generation efficiency of a solar cell obtained by minimizing...
2018/0190845 COMPOUND-BASED SOLAR CELL AND MANUFACTURING METHOD OF LIGHT ABSORPTION LAYER
A compound-based solar cell including a first electrode, a second electrode, a first type doped semiconductor layer and a second type doped semiconductor layer...
2018/0190844 Solar Cell With Selectively Doped Conductive Oxide Layer and Method of Making the Same
A method of making a coated substrate having a transparent conductive oxide layer with a dopant selectively distributed in the layer includes selectively...
2018/0190843 SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME
A solar cell includes a first conductive type substrate; an emitter layer of a second conductive type opposite the first conductive type, the emitter layer and...
2018/0190842 RADIATION DETECTOR HAVING PIXELATED ANODE STRIP-ELECTRODES
A radiation detection system is provided. The radiation detection system includes a radiation detector. The radiation detector includes a semiconductor layer...
2018/0190841 METHODS TO INTRODUCE SUB-MICROMETER, SYMMETRY-BREAKING SURFACE CORRUGATION TO SILICON SUBSTRATES TO INCREASE...
Provided is a method for fabricating a nano-patterned surface. The method includes forming a mask on a substrate, patterning the substrate to include a...
2018/0190840 PHOTOVOLTAIC DEVICE
In a photovoltaic device (1), first amorphous semiconductor portions (102n) and second amorphous semiconductor portions (102p) are provided alternately on one...
2018/0190839 PHOTOELECTRIC CONVERSION ELEMENT
A photoelectric conversion element includes a composite passivation film disposed on a second surface of a semiconductor substrate that is opposite to a first...
2018/0190838 METHOD FOR MAKING A COVER FOR AN ELECTRONIC PACKAGE AND ELECTRONIC PACKAGE COMPRISING A COVER
A cover for an electronic package is manufactured by placing an optical insert, having opposite faces and configured to allow light radiation to pass...
2018/0190837 METALLIZATION STRUCTURES FOR SOLAR CELLS
Methods of fabricating a solar cell including metallization techniques and resulting solar cells, are described. In an example, forming a first semiconductor...
2018/0190836 HIGH VOLTAGE PIN DIODE
A PIN diode is formed on an insulating structure on a substrate of semiconductor. The insulating structure is disposed on a high voltage doped region in the...
2018/0190835 STATIC RANDOM ACCESS MEMORY (SRAM) DEVICE FOR IMPROVING ELECTRICAL CHARACTERISTICS AND LOGIC DEVICE INCLUDING...
A static random access memory (SRAM) device includes a circuit element that includes a first inverter having a first load transistor and a first drive...
2018/0190834 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE
An object is to provide favorable interface characteristics of a thin film transistor including an oxide semiconductor layer without mixing of an impurity such...
2018/0190833 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device including a field effect transistor (FET) device includes a substrate and a channel structure formed of a two-dimensional (2D) material....
2018/0190832 DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME
A display apparatus includes a thin film transistor on a first base substrate, the thin film transistor including a gate electrode disposed on the first base...
2018/0190831 THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME, ARRAY SUBSTRATE AND DISPLAY DEVICE
The present disclosure provides a Thin Film Transistor and a method for manufacturing the same, an array substrate and a display device, so as to increase...
2018/0190830 THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF
The present disclosure provides a TFT, a manufacturing method thereof, an array substrate and a manufacturing method thereof. The TFT includes a substrate, a...
2018/0190829 SEMICONDUCTOR DEVICE HAVING CHANNEL REGIONS
A semiconductor device includes a substrate; protruding portions extending in parallel to each other on the substrate; nanowires provided on the protruding...
2018/0190828 SEMICONDUCTOR DEVICE
Provided is a highly integrated semiconductor device, a semiconductor device with large storage capacity with respect to an area occupied by a capacitor, a...
2018/0190827 Semiconductor Device, Manufacturing Method of the Same, and Electronic Device
A semiconductor device in which parasitic capacitance is reduced is provided. A first insulating layer is deposited over a substrate. A first oxide insulating...
2018/0190826 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
A miniaturized transistor with less variation and highly stable electrical characteristics is provided. Further, high performance and high reliability of a...
2018/0190825 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
The semiconductor device includes a first insulating layer, a second insulating layer, an oxide semiconductor layer, and first to third conductive layers. The...
2018/0190824 THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND ORGANIC LIGHT EMITTING DISPLAY DEVICE INCLUDING THE...
Disclosed are a thin film transistor, a method of manufacturing the same, and an organic light emitting display device including the same, in which a driving...
2018/0190823 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
A manufacturing method of a semiconductor device includes forming an amorphous silicon film on an insulation surface, forming a silicon oxide film using an...
2018/0190822 Thin Film Transistor Substrate and Display Device
Disclosed is a thin film transistor substrate that may include a base substrate, a first protection film disposed on the base substrate, an oxide semiconductor...
2018/0190821 SEMICONDUCTOR DEVICE
A semiconductor device is provided which includes a first fin-type pattern including a first side surface and a second side surface opposite to each other, a...
2018/0190820 SEMICONDUCTOR DEVICE HAVING CURVED GATE ELECTRODE ALIGNED WITH CURVED SIDE-WALL INSULATING FILM AND...
A semiconductor device including a channel region formed in a semiconductor substrate; a source region formed on one side of the channel region; a drain region...
2018/0190819 METAL OXIDE SEMICONDUCTOR DEVICE HAVING RECESS AND MANUFACTURING METHOD THEREOF
The present invention provides a MOS (Metal-Oxide-Silicon) device and a manufacturing method thereof. The MOS device includes: a semiconductor substrate, a...
2018/0190818 Semiconductor Devices With Gate-Controlled Energy Filtering
The present disclosure relates to semiconductor devices with gate-controlled energy filtering. One example embodiment includes a semiconductor device. The...
2018/0190817 METHOD AND STRUCTURE TO PROVIDE INTEGRATED LONG CHANNEL VERTICAL FINFET DEVICE
A vertical fin field effect transistor includes a semiconductor fin disposed over a well region and a gate conductor layer disposed over a sidewall of the fin,...
2018/0190816 HIGH-VOLTAGE SEMICONDUCTOR DEVICE
A high-voltage semiconductor device is disclosed. The high-voltage semiconductor device includes a gate structure on a substrate structure. A drain doped...
2018/0190815 HIGH VOLTAGE P-TYPE LATERAL DOUBLE-DIFFUSED METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR
A high voltage P-type lateral double-diffused metal oxide semiconductor field effect transistor (10) comprises: a substrate (100); an N-type lateral...
2018/0190814 Laterally Diffused Metal Oxide Semiconductor with Gate Poly Contact within Source Window
An integrated circuit includes a power transistor having at least one transistor finger that lies within a semiconductor material substrate. Each transistor...
2018/0190813 SEMICONDUCTOR DEVICE WITH EXTENDED ELECTRICALLY-SAFE OPERATING AREA
In at least some embodiments, a semiconductor device comprises a source region is formed within a well. The source region comprises a first dopant type, and...
2018/0190812 ARRAY SUBSTRATE, METHOD FOR MANUFACTURING ARRAY SUBSTRATE, AND DISPLAY DEVICE
Disclosed is an array substrate, a method for manufacturing the array substrate, and a display device. The array substrate includes: a plurality of pixel units...
2018/0190811 3D SEMICONDUCTOR DEVICE AND STRUCTURE
A 3D semiconductor device, the device including: a first layer including first transistors each including a silicon channel; a second layer including second...
2018/0190810 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes a gate structure formed over a channel region of the semiconductor device, a source/drain region adjacent the channel region,...
2018/0190809 SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME
A semiconductor device includes a substrate provided with an electronic device, an interlayer dielectric (ILD) layer formed over the electronic device, a...
2018/0190808 High-Voltage Metal-Oxide-Semiconductor Transistor Capable of Preventing Occurrence of Exceedingly-Large Reverse...
An embodiment of the invention shows a high-voltage MOS field-effect transistor connected in series with a Schottky diode. When the Schottky diode is forwardly...
2018/0190807 SEMICONDUCTOR DEVICES WITH RAISED DOPED CRYSTALLINE STRUCTURES
Semiconductor devices including an elevated or raised doped crystalline structure extending from a device layer are described. In embodiments, III-N...
2018/0190806 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
To achieve a semiconductor device equipped with a low ON voltage and high load short circuit withstand trench gate IGBT. A collector region on a back surface...
2018/0190805 INSULATED GATE BIPOLAR TRANSISTOR AND PREPARATION METHOD THEREFOR
Provided are an insulated gate bipolar transistor and a preparation method therefor. An auxiliary groove gate, namely a structure of an auxiliary groove, an...
2018/0190804 GATE-INDUCED SOURCE TUNNELING FIELD-EFFECT TRANSISTOR
A tunneling field-effect transistor includes: 1) a source region; 2) a drain region; 3) a channel region extending between the source region and the drain...
2018/0190803 METHOD OF MANUFACTURING SOI LATERAL Si-EMITTER SiGe BASE HBT
A SOI lateral heterojunction Si-emitter SiGe-base bipolar transistor is provided that contains an intrinsic base region that includes a small band gap region...
2018/0190802 TUNNEL FIELD-EFFECT TRANSISTOR AND TUNNEL FIELD-EFFECT TRANSISTOR PRODUCTION METHOD
A tunnel field-effect transistor (TFET) is provided. In the TFET, a channel region (202) connects a source region (201) and a drain region (203); a pocket...
2018/0190801 SEMICONDUCTOR DEVICE WITH MULTIPLE HBTS HAVING DIFFERENT EMITTER BALLAST RESISTANCES
The present disclosure relates to a semiconductor device with multiple heterojunction bipolar transistors (HBTs) that have different emitter ballast...
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