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Patent # Description
2018/0269231 THIN FILM TRANSISTOR ARRAY PANEL AND A METHOD FOR MANUFACTURING THE SAME
A thin film transistor array panel includes a substrate; a plurality of gate lines that are formed on the substrate; a plurality of data lines that intersect...
2018/0269230 Thin Polysilicon For Lower Off-Capacitance Of A Radio Frequency (RF) Silicon-On-Insulator (SOI) Switch Field...
A radio frequency (RF) switch includes a plurality of series-connected silicon-on-insulator (SOI) CMOS transistors fabricated in accordance with a...
2018/0269229 3D Semiconductor Device and Structure
A multilevel semiconductor device, the device including: a first level including a first array of first programmable cells and a first control line; a second...
2018/0269228 SEMICONDUCTOR MEMORY DEVICE
According to an embodiment, a semiconductor memory device comprises control gate electrodes and a semiconductor layer. The control gate electrodes are stacked...
2018/0269227 Memory Cells and Integrated Structures
A memory cell comprises, in the following order, channel material, a charge-passage structure, charge-storage material, a charge-blocking region, and a control...
2018/0269226 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME
A semiconductor memory device includes a substrate, a first stacked body provided in a first region on the substrate, a transistor formed in a second region of...
2018/0269225 INTEGRATED CIRCUIT DEVICE WITH LAYERED TRENCH CONDUCTORS
An integrated circuit includes a multilayer stack, and a plurality of layered conductors extending in the multilayer stack and into a conductor layer beneath...
2018/0269224 MEMORY DEVICE
According to one embodiment, a memory device includes a plurality of first electrode layers stacked over each other in a stacking direction, a pair of second...
2018/0269223 MANUFACTURING METHOD OF SEMICONDUCTOR MEMORY DEVICE
A manufacturing method of a semiconductor memory device includes disposing a first stacked body on a substrate, forming a first through via hole in the first...
2018/0269222 3D MEMORY DEVICE WITH LAYERED CONDUCTORS
An integrated circuit includes a multilayer stack, and a plurality of layered conductors extending in the multilayer stack and into a conductor layer beneath...
2018/0269221 SEMICONDUCTOR DEVICE
According to an embodiment, a semiconductor device includes a substrate, a stacked body, and a second insulating film. A first insulating film and an electrode...
2018/0269220 FINFET VERTICAL FLASH MEMORY
A plurality of fin structures containing, from bottom to top, a non-doped semiconductor portion and a second doped semiconductor portion of a first ...
2018/0269219 SEMICONDUCTOR MEMORY DEVICE
According to an embodiment, a semiconductor memory device includes a substrate, a circuit portion, a stacked body, at least one columnar member, a device...
2018/0269218 SEMICONDUCTOR MEMORY DEVICE
A semiconductor memory device includes a semiconductor member extending in a first direction, a first interconnect extending in a second direction crossing the...
2018/0269217 TRANSISTOR, MEMORY, AND MANUFACTURING METHOD OF TRANSISTOR
According to one embodiment, a transistor includes: a gate electrode; a gate insulating layer provided on the gate electrode; an oxide semiconductor layer...
2018/0269216 FERROELECTRIC MEMORY DEVICE AND CROSS-POINT ARRAY APPARATUS INCLUDING THE SAME
A ferroelectric memory device includes a first electrode layer disposed on a substrate, a first tunnel barrier layer disposed on the first electrode layer, a...
2018/0269215 THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF FORMING THE SAME
A method of forming a three-dimensional memory device is provided. Insulating layers and sacrificial layers are stacked alternatively on a substrate. At least...
2018/0269214 THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A three-dimensional (3D) semiconductor device is provided, comprising a substrate having an array area and a staircase area adjacent to the array area, wherein...
2018/0269213 METHOD FOR FABRICATING A LOCAL INTERCONNECT IN A SEMICONDUCTOR DEVICE
A semiconductor device comprises a first gate electrode disposed on a substrate, a first source/drain region, and a local interconnect connecting the first...
2018/0269212 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region and the substrate includes...
2018/0269211 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
A method for fabricating semiconductor device includes: forming a bottom electrode of a high aspect ratio; forming an interface layer by sequentially...
2018/0269210 SEMICONDUCTOR MEMORY
According to one embodiment, a memory includes: a bit line; a source line; a pillar extending in a first direction and including an oxide semiconductor layer;...
2018/0269209 MTP MEMORY FOR SOI PROCESS
Embodiments of a multi-time programmable (MTP) structure for non-volatile memory cells are presented. The memory cell includes an ultra-thin ...
2018/0269208 SEMICONDUCTOR INTEGRATED CIRCUIT
A semiconductor integrated circuit includes semiconductor substrate having a plurality of first potential side areas, including a first two adjacent first...
2018/0269207 Semiconductor Structure and Manufacturing Method Thereof
A method for manufacturing a semiconductor structure includes forming a plurality of dummy semiconductor fins on a substrate. The dummy semiconductor fins are...
2018/0269206 SEMICONDUCTOR DEVICE AND POWER AMPLIFIER CIRCUIT
A semiconductor device includes a semiconductor substrate and first and second bipolar transistors. The semiconductor substrate includes first and second main...
2018/0269205 DIODE CONNECTED VERTICAL TRANSISTOR
An electrical device including a vertical transistor device connected to a vertical diode. The vertical diode connected transistor device including a...
2018/0269204 DIODE CONNECTED VERTICAL TRANSISTOR
An electrical device including a vertical transistor device connected to a vertical diode. The vertical diode connected transistor device including a...
2018/0269203 STORAGE DEVICE AND CAPACITOR
A capacitor includes a plurality of first electrode layers stacked in a first direction, a first conductor extending in the first direction through the...
2018/0269202 SEMICONDUCTOR DEVICE
A semiconductor device including a semiconductor substrate and a plurality of trench structures formed on the semiconductor substrate. The semiconductor...
2018/0269201 INTRA-METAL CAPACITOR AND METHOD OF FORMING THE SAME
A method of forming a capacitor includes the following steps. First, a substrate is provided. A dielectric layer is formed over the substrate. A first...
2018/0269200 SEMICONDUCTOR DEVICE
A semiconductor device 100 has a power transistor N1 of vertical structure and a temperature detection element 10a configured to detect abnormal heat...
2018/0269199 ELECTRONIC DEVICE FOR ESD PROTECTION
A semiconductor device includes a thyristor disposed in a semiconductor body. The thyristor has an anode, a cathode, a first bipolar transistor located on an...
2018/0269198 ELECTROSTATIC DISCHARGE PROTECTION SEMICONDUCTOR DEVICE
An electrostatic discharge (ESD) protection device includes a substrate, a first gate group and a second gate group on the substrate, a drain region and a...
2018/0269197 TIGHT INTEGRATED VERTICAL TRANSISTOR DUAL DIODE STRUCTURE FOR ELECTROSTATIC DISCHARGE CIRCUIT PROTECTOR
An electric static discharge (ESD) diode pair is disclosed. The first diode of the device includes a first diode junction portion having vertically orientated...
2018/0269195 Semiconductor Device and Method of Forming SIP Module Over Film Layer
A semiconductor device has a semiconductor die or component, including an IPD, disposed over an attach area of a penetrable film layer with a portion of the...
2018/0269194 Highly Integrated RF Power and Power Conversion Based on Ga2O3 Technology
An integrated circuit is provided including a first substrate with a first thermal conductivity. An active layer is deposited on the first substrate. At least...
2018/0269193 OPTOELECTRONIC CHIP EMBEDDED ORGANIC SUBSTRATE
Optoelectronic devices and method of forming the same include an optoelectronic component in a substrate layer. An integrated circuit chip is positioned on the...
2018/0269192 LIGHT EMITTING DEVICE PACKAGE
A light emitting device package includes a cell array including a plurality of semiconductor light emitting units, and having a first surface and a second...
2018/0269191 MICRO-LED DISPLAY ASSEMBLY
The present disclosure relates to semiconductor structures and, more particularly, to a micro-light emitting diode (LED) display assembly and methods of...
2018/0269190 METHOD OF EMBEDDING WLCSP COMPONENTS IN E-WLB AND E-PLB
Embodiments of the invention include multi-die package and methods of making such multi-die packages. In an embodiment a mold layer has a first surface and a...
2018/0269189 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
A method of manufacturing a structure includes: providing a substrate; forming an adhesive layer over the substrate; forming an interconnect layer comprising a...
2018/0269188 SEMICONDUCTOR PACKAGES AND METHODS OF FORMING SAME
An embodiment is a package including a first package structure. The first package structure includes a first integrated circuit die having an active side and a...
2018/0269187 MULTI-PACKAGE INTEGRATED CIRCUIT ASSEMBLY WITH THROUGH-MOLD VIA
A multi-package integrated circuit assembly can include a first electronic package having a first package substrate including a first die side and a first...
2018/0269186 LOW PROFILE INTEGRATED PACKAGE
A package that includes a substrate comprising an interposer interconnect and a cavity, a redistribution portion coupled to the substrate, the redistribution...
2018/0269185 METHOD OF MANUFACTURING ILLUMINATION DEVICE, ILLUMINATION DEVICE, ILLUMINATION DEVICE MANUFACTURING SYSTEM, AND...
An illumination device manufacturing system includes memory, a first color tone bin, a first bin, a second bin, a third bin, a fourth bin, a fifth bin, a sixth...
2018/0269184 IMAGE DISPLAY MODULE AND METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE
The present disclosure provides an image display module and a method of manufacturing the same, and a display device. The image display module includes a...
2018/0269183 MULTI-PACKAGE INTEGRATED CIRCUIT ASSEMBLY WITH PACKAGE ON PACKAGE INTERCONNECTS
A multi-package integrated circuit assembly can include a first electronic package having a first package substrate including a first die side and a first...
2018/0269182 LIGHT-EMITTING DEVICE AND BACKLIGHT MODULE USING THE SAME
A light-emitting device is provided. The light-emitting device includes a substrate having a long edge and a short edge, at least one electrode pad assembly,...
2018/0269181 System -in-Package with Double-Sided Molding
A semiconductor device includes a substrate with an opening formed through the substrate. A first electronic component is disposed over the substrate outside a...
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