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Patent # Description
2018/0269079 SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT DEVICE
A substrate processing method including a vapor atmosphere filling step in which a vapor atmosphere which contains vapor of a low surface tension liquid whose...
2018/0269078 SUBSTRATE TREATMENT DEVICE AND SUBSTRATE TREATMENT METHOD
A substrate treatment device according to an embodiment of the present invention may include a process chamber, a substrate supporting part installed in the...
2018/0269077 METHOD FOR DEBONDING TEMPORARILY ADHESIVE-BONDED CARRIER-WORKPIECE PAIR BY USING HIGH PRESSURE SOLVENT
A method of debonding a temporarily adhesive-bonded carrier-workpiece pair employs a stream of a solvent at a high pressure. The carrier and the workpiece are...
2018/0269076 SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS AND RECORDING MEDIUM
A plasma processing method includes etching a removing target film by supplying onto a peripheral portion of a substrate being rotated a first processing...
2018/0269075 SEMICONDUCTOR DEVICE PACKAGE AND METHOD OF FABRICATING THE SAME
A semiconductor device package includes a substrate having a first surface and a second surface facing away from the first surface, a conductive column...
2018/0269074 BONDING JUNCTION STRUCTURE
Provided is a bonding joining structure in which a heat generating body and a support including a metal are joined to each other via a joint portion composed...
2018/0269073 Lead Frame and the Method to Fabricate Thereof
A method to form an electrical component, the method comprising: providing a first lead and a second lead; forming a first conductive pillar and a second...
2018/0269072 SUBSTRATE PROCESSING METHOD AND COMPUTER STORAGE MEDIUM
A substrate processing method of processing a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, the substrate...
2018/0269071 ATOMIC LAYER ETCHING OF SILICON NITRIDE
A method for selectively etching SiN with respect to SiO or SiGe or Si of a structure is provided comprising providing a plurality of cycles of atomic layer...
2018/0269070 ULTRAHIGH SELECTIVE NITRIDE ETCH TO FORM FINFET DEVICES
A substrate processing system for selectively etching a layer on a substrate includes an upper chamber region, an inductive coil arranged around the upper...
2018/0269069 Method of Manufacturing Semiconductor Device and Vacuum Processing Apparatus
A method for manufacturing a semiconductor device by processing a substrate, the method includes forming a first film of a polymer having urea bonds by...
2018/0269068 METHOD OF PROCESSING WAFER
A method of processing a wafer includes a plasma etching step of supplying an etching gas in a plasma state to the wafer to remove processing strains, debris,...
2018/0269067 Techniques and systems for continuous-flow plasma enhanced atomic layer deposition (PEALD)
Techniques are disclosed for methods and apparatuses for performing continuous-flow plasma enhanced atomic layer deposition (PEALD). Plasma gas, containing one...
2018/0269066 Techniques and systems for continuous-flow plasma enhanced atomic layer deposition (PEALD)
Techniques are disclosed for methods and apparatuses for performing continuous-flow plasma enhanced atomic layer deposition (PEALD). Plasma gas, containing one...
2018/0269065 Aluminum Content Control of TiAIN Films
Described are methods of depositing a titanium aluminum nitride film on a substrate surface with a controlled amount of carbon. The methods include exposing a...
2018/0269064 METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
In a vertical MOSFET of a trench gate structure, a high-concentration implantation region is provided in a p-type base region formed from a p-type silicon...
2018/0269063 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A method of manufacturing a semiconductor device, including providing a semiconductor wafer, forming a photoresist film on a main surface of the semiconductor...
2018/0269062 REVERSE CONDUCTING IGBT DEVICE AND MANUFACTURING METHOD THEREFOR
A reverse conducting IGBT device and a method for manufacturing the reverse conducting IGBT device are provided. The method includes: forming, based on a...
2018/0269061 CAPPED ALD FILMS FOR DOPING FIN-SHAPED CHANNEL REGIONS OF 3-D IC TRANSISTORS
Disclosed herein are methods of doping a fin-shaped channel region of a partially fabricated 3-D transistor on a semiconductor substrate. The methods may...
2018/0269060 ALTERNATING HARDMASKS FOR TIGHT-PITCH LINE FORMATION
Methods of forming fins include forming mask fins on a protection layer over a seed layer. Seed layer fins are etched out of the seed layer. Self-assembled...
2018/0269059 METHOD OF FORMING A SEMICONDUCTOR DEVICE USING LAYERED ETCHING AND REPAIRING OF DAMAGED PORTIONS
A method of fabricating a semiconductor device includes plasma etching a portion of a plurality of metal dichalcogenide films comprising a compound of a metal...
2018/0269058 SELECTIVE GROWTH OF SILICON NITRIDE
Methods and apparatuses for selectively depositing silicon nitride on silicon surfaces relative to silicon oxide surfaces and selectively depositing silicon...
2018/0269057 Formulation for Deposition of Silicon Doped Hafnium Oxide as Ferroelectric Materials
In one aspect, the invention is formulations comprising both organoaminohafnium and organoaminosilane precursors that allows anchoring both silicon-containing...
2018/0269056 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE
A substrate processing method including a center portion discharging step of discharging a low-surface-tension liquid from a first low-surface-tension liquid...
2018/0269055 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM
There is provided a technique that includes: forming a film containing a main element, carbon and nitrogen on a pattern formed on a surface of a substrate by...
2018/0269054 ANALYSER ARRANGEMENT FOR PARTICLE SPECTROMETER
The present invention relates to a method for determining at least one parameter related to charged particles emitted from a particle emitting sample, e.g. a...
2018/0269053 CONTROL OF MAGNETIC SECTOR MASS SPECTROMETER MAGNET
A control system for controlling a magnet of a magnetic sector mass spectrometer comprises a magnetic field sensor for sensing the magnetic field of the magnet...
2018/0269052 DETECTION OF ANALYTES USING POROUS MASS SPECTROMETRY SURFACE
The disclosure herein includes compositions and methods for ionizing targets and methods for making the compositions. In some embodiments, the compositions can...
2018/0269051 LOW CROSS-TALK FAST SAMPLE DELIVERY SYSTEM BASED UPON ACOUSTIC DROPLET EJECTION
An ion source for a mass spectrometer is disclosed comprising an ultrasonic transducer which focuses ultrasonic energy onto a surface of a sample fluid without...
2018/0269050 SEPARATION OF LIQUID IN DROPLETS AND SEDIMENTED MATERIAL ENCLOSED THEREIN
The invention relates to methods for drawing-off liquid from individual droplets which are in a predefined arrangement on a flat substrate and have sedimented...
2018/0269049 Mass Spectrometry Device
With regard to an object of the invention, in a tandem type mass spectrometry system including three stages of a QMS, sensitivity of a daughter ion decreases...
2018/0269048 Method to Improve MS/MS Spectral Quality from MRM Triggered IDA
Systems and methods are provided for enabling or disabling a DMS device during an IDA method. Each cycle of the method includes a survey scan step, producing a...
2018/0269047 PSEUDO INTERNAL STANDARD METHOD, DEVICE AND APPLICATION FOR MASS SPECTROMETRY QUANTITATIVE ANALYSIS
A pseudo internal standard method, device and application for mass spectrometry quantitative analysis is disclosed.
2018/0269046 SECONDARY ION MASS SPECTROMETER AND SECONDARY ION MASS SPECTROMETRIC METHOD
A secondary ion mass spectrometer comprises: (a) a first primary ion source for generating a first pulsed primary ion beam with short pulse durations; (b) a...
2018/0269045 PVD TOOL TO DEPOSIT HIGHLY REACTIVE MATERIALS
A deposition tool includes a vacuum chamber and a physical vapor deposition module including a target source in the vacuum chamber. The target source includes...
2018/0269044 PVD TOOL TO DEPOSIT HIGHLY REACTIVE MATERIALS
A deposition tool includes a vacuum chamber and a physical vapor deposition module including a target source in the vacuum chamber. The target source includes...
2018/0269043 MAGNETRON SPUTTERING APPARATUS AND FILM FORMATION METHOD USING MAGNETRON SPUTTERING APPARATUS
According to one embodiment, a film formation method using a magnetron sputtering apparatus including first and second magnets provided on first and second...
2018/0269042 PLASMA PROCESSING APPARATUS AND OPERATION METHOD THEREOF
A plasma apparatus of processing a wafer disposed in a processing chamber using plasma includes one window, another window, a light receiving unit, a light...
2018/0269041 SELF-SUSTAINED NON-AMBIPOLAR DIRECT CURRENT (DC) PLASMA AT LOW POWER
A processing system is disclosed, having an electron beam source chamber that excites plasma to generate an electron beam, and an ion beam source chamber that...
2018/0269040 LIQUID PROCESSING APPARATUS INCLUDING CONTAINER, FIRST AND SECOND ELECTRODES, INSULATOR SURROUNDING AT LEAST...
A liquid processing apparatus includes a container for holding liquid, a first electrode, a second electrode, a first insulator that has a cylindrical shape...
2018/0269039 CHEMISTRY COMPATIBLE COATING MATERIAL FOR ADVANCED DEVICE ON-WAFER PARTICLE PERFORMANCE
A chamber component comprises a body and a plasma sprayed ceramic coating on the body. The plasma sprayed ceramic coating is applied using a method that...
2018/0269038 Multi-Zone Gas Injection Assembly with Azimuthal and Radial Distribution Control
A gas injection system includes (a) a side gas plenum, (b) a plurality of N gas inlets coupled to said side gas plenum, (c) plural side gas outlets extending...
2018/0269037 MICROWAVE APPLICATOR WITH SOLID-STATE GENERATOR POWER SOURCE
A microwave system has a solid-state generator which generates microwave energy and includes at least one control input for receiving a control signal to vary...
2018/0269036 DETACHABLE GAS INJECTOR USED FOR SEMICONDUCTOR EQUIPMENT
A detachable gas injector adaptable to semiconductor equipment includes a top cover, a hollow sleeve, a top housing and a gas output unit. The hollow sleeve...
2018/0269035 A DEVICE INTRINSICALLY DESIGNED TO RESONATE, SUITABLE FOR RF POWER TRANSFER AS WELL AS GROUP INCLUDING SUCH...
The present invention regards a device intrinsically designed to resonate, suitable for RF power transfer, particularly usable for the production of plasma and...
2018/0269034 CHARGED PARTICLE BEAM WRITING METHOD AND CHARGED PARTICLE BEAM WRITING APPARATUS
In one embodiment, a charged particle beam writing apparatus includes a current limiting aperture, a blanking deflector switching between beam ON and beam OFF...
2018/0269033 APPARATUS AND TECHNIQUES FOR DECELERATED ION BEAM WITH NO ENERGY CONTAMINATION
An ion implantation system may include an ion source to generate an ion beam, a substrate stage disposed downstream of the ion source; and a deceleration stage...
2018/0269032 SCANNING ELECTRON MICROSCOPE AND SAMPLE OBSERVATION METHOD
A scanning electron microscope of the present invention performs scanning by changing a scanning line density in accordance with a sample when an image of a...
2018/0269031 Scanning Transmission Electron Microscope
A scanning transmission electron microscope is adapted to acquire high quality precession electron diffraction (PED) patterns by means of separated scanning...
2018/0269030 Scanning Transmission Electron Microscope With An Objective Electromagnetic Lens And A Method Of Use Thereof
The object of the present invention provides a scanning transmission electron microscope with the ability to formed at least one diffraction pattern. The...
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