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Patent # Description
2018/0277711 GRAPHENE LIGHT EMITTING TRANSISTOR AND METHOD FOR THE FABRICATION THEREOF, ACTIVE GRAPHENE LIGHT EMITTING...
The present application provides a graphene light emitting transistor, including: a gate electrode disposed on a substrate; a gate insulating layer disposed on...
2018/0277710 METHOD AND DEVICE FOR PASSIVATING DEFECTS IN SEMICONDUCTOR SUBSTRATES
The invention relates to methods and an apparatus for passivating defects of a semiconductor substrate, in particular a silicon based solar cell. According to...
2018/0277709 REDUCING DARK CURRENT IN GERMANIUM PHOTODIODES BY ELECTRICAL OVER-STRESS
Methods and systems for reducing dark current in a photodiode include heating a photodiode and applying an increasing reverse bias voltage to the heated...
2018/0277708 FABRICATION AND USE OF LARGE-GRAIN TEMPLATES FOR EPITAXIAL DEPOSITION OF SEMICONDUCTOR MATERIALS
Methods for growing and using large-grain templates are provided. According to an aspect of the invention, a method includes depositing a small-grain layer of...
2018/0277707 HIGH VOLTAGE PHOTOVOLTAICS INTEGRATED WITH LIGHT EMITTING DIODE
An electrical device that includes a material stack present on a supporting substrate. An LED is present in a first end of the material stack having a first...
2018/0277706 HIGH VOLTAGE PHOTOVOLTAICS INTEGRATED WITH LIGHT EMITTING DIODE
An electrical device that includes a material stack present on a supporting substrate. An LED is present in a first end of the material stack having a first...
2018/0277705 HIGH VOLTAGE PHOTOVOLTAICS INTEGRATED WITH LIGHT EMITTING DIODE CONTAINING ZINC OXIDE CONTAINING LAYER
An electrical device that includes a material stack present on a supporting substrate. An LED is present in a first end of the material stack having a first...
2018/0277704 HIGH VOLTAGE PHOTOVOLTAICS INTEGRATED WITH LIGHT EMITTING DIODE CONTAINING ZINC OXIDE CONTAINING LAYER
An electrical device that includes a material stack present on a supporting substrate. An LED is present in a first end of the material stack having a first...
2018/0277703 CONDUCTIVE ISOLATION BETWEEN PHOTOTRANSISTORS
Disclosed are phototransistors, and more specifically a detector that includes two or more phototransistors, conductively isolated from each other. Embodiments...
2018/0277702 GROUP-IV SOLAR CELL STRUCTURE USING GROUP-IV OR III-V HETEROSTRUCTURES
Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single-junction or multijunction solar cells, with at least a...
2018/0277701 Method of Manufacturing of a Solar Cell and Solar Cell Thus Obtained
The method of manufacturing of a solar cell comprises the steps of: providing a semiconductor substrate (100) comprising an electrically conductive region (11)...
2018/0277700 SOLAR CELL, METHOD FOR MANUFACTURING SAME, SOLAR CELL MODULE AND WIRING SHEET
A method for manufacturing a solar cell comprises forming a first conductivity-type silicon-based thin-film on a first surface of a substrate; forming a second...
2018/0277699 Thermophotovoltaic Energy Converter
A thermophotovoltaic (TPV) energy converter includes a thermal emitter to generate photons of energy in response to receiving heat and a thermal receiver...
2018/0277698 DOUBLE-SIDED LIGHT RECEIVING SOLAR CELL MODULE
A double-sided light receiving solar cell module is disclosed, and includes a plurality of solar cells connected to each other by a plurality of conductive...
2018/0277697 PHOTODETECTOR WITH REDUCED DARK CURRENT
The photodetector includes a photon absorbing region formed by a first semiconductor material having a first bandgap energy value. It also includes a blocking...
2018/0277696 ALLOYED HALIDE DOUBLE PEROVSKITES AS SOLAR-CELL ABSORBERS
An alloyed halide double perovskite material, an alloyed halide double perovskite solar-cell absorber and solar cells constructed with such absorbers, the...
2018/0277695 HYBRID PEROVSKITE BULK PHOTOVOLTAIC EFFECT DEVICES AND METHODS OF MAKING THE SAME
The present disclosure relates to a composition that includes a perovskite crystal having a ferroelectric domain aligned substantially parallel to a reference...
2018/0277694 SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME
A solar cell can include a silicon semiconductor substrate having a first conductive type; a oxide layer on a first surface of the silicon semiconductor...
2018/0277693 Method of Manufacturing a Solar Cell
The process for manufacturing a solar cell provides for so-called passivated contacts based on a layer of polysilicon layer onto a tunnel dielectric, such as a...
2018/0277692 SOLAR CELL, MULTI-JUNCTION SOLAR CELL, SOLAR CELL MODULE, AND SOLAR POWER GENERATION SYSTEM
A solar cell of an embodiment includes a high-resistance oxide layer; a first electrode comprising line-patterned conductive members or mesh-patterned...
2018/0277691 Novel carbosiloxane polymer compositions, methods of producing the same and the use thereof
A method of producing a photovoltaic cell having a cover, comprising the steps of: providing a photovoltaic cell which comprises a crystalline silicon...
2018/0277690 SEMICONDUCTOR DEVICE INCLUDING AN ULTRAVIOLET LIGHT RECEIVING ELEMENT AND METHOD OF MANUFACTURING THE SAME
First and second semiconductor light receiving elements each include: a first P-type semiconductor region which is formed in an N-type semiconductor substrate;...
2018/0277689 Quenching circuit
Disclosed is a quenching circuit including an avalanche photodiode and a quenching diode applying a bias voltage to the avalanche photodiode. Since the...
2018/0277688 MOS CAPACITOR AND IMAGE SENSOR HAVING THE SAME
A MOS capacitor may include: an isolation layer formed in a substrate and defining an active region; a first electrode formed in the active region, and...
2018/0277687 III-V SEMICONDUCTOR DIODE
A stacked III-V semiconductor diode that has an n.sup.+ layer having a dopant concentration of at least 10.sup.19 N/cm.sup.3, an n.sup.- layer having a dopant...
2018/0277686 III-V SEMICONDUCTOR DIODE
A stacked III-V semiconductor diode having an n.sup.+-layer with a dopant concentration of at least 10.sup.19 N/cm.sup.3, an n.sup.--layer with a dopant...
2018/0277685 THIN FILM TRANSISTOR AND MANUFACTURING METHOD OF THE SAME, ARRAY SUBSTRATE AND DISPLAY DEVICE
A method for manufacturing a thin film transistor includes: providing a substrate having a first surface and a second surface which are opposed to each other;...
2018/0277684 ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME
Provided is a method for fabricating an electronic device, the method including: preparing a carrier substrate including an element region and a wiring region;...
2018/0277683 MOBILE FERROELECTRIC SINGLE DOMAIN WALL IMPLEMENTATION OF A SYMMETRIC RESISTIVE PROCESSING UNIT
A method of fabricating a symmetric element of a resistive processing unit (RPU) includes forming a substrate with a channel region connecting two doped...
2018/0277682 NANOWIRE SEMICONDUCTOR DEVICE HAVING HIGH-QUALITY EPITAXIAL LAYER AND METHOD OF MANUFACTURING THE SAME
A nanowire semiconductor device having a high-quality epitaxial layer. The semiconductor device may include: a substrate; one or more nanowires spaced apart...
2018/0277681 FinFETs and Methods of Forming FinFETs
An embodiment is a method including recessing a gate electrode over a semiconductor fin on a substrate to form a first recess from a top surface of a...
2018/0277680 Source/Drain Profile for FinFET
An embodiment is a FinFET device. The FinFET device comprises a fin, a first source/drain region, a second source/drain region, and a channel region. The fin...
2018/0277679 COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
A method for forming a complementary metal oxide semiconductor device is disclosed. First, a substrate having a first device region and a second device region...
2018/0277677 TRANSISTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME
Present disclosure provides a transistor structure, including a substrate, a first gate over the substrate, a second gate over the substrate and laterally in...
2018/0277676 PRECISE CONTROL OF VERTICAL TRANSISTOR GATE LENGTH
A transistor includes a vertical channel fin on a bottom source/drain region. The vertical channel fin includes a base portion and an upper portion. The base...
2018/0277675 VERTICAL FIELD EFFECT TRANSISTOR WITH IMPROVED RELIABILITY
Provided is a method for forming a semiconductor structure. In embodiments of the invention, the method includes forming a semiconductor fin on a source/drain...
2018/0277674 VERTICAL FIELD EFFECT TRANSISTOR WITH IMPROVED RELIABILITY
Provided is a method for forming a semiconductor structure. In embodiments of the invention, the method includes forming a semiconductor fin on a source/drain...
2018/0277673 Termination Region Architecture for Vertical Power Transistors
A vertical power switching device, such as a vertical superjunction metal-oxide-semiconductor field-effect-transistor (MOSFET), in which termination structures...
2018/0277672 SEMICONDUCTOR STRUCTURE
A semiconductor structure includes a substrate, a source/drain region, a composite layer and a plug. The source/drain region and the composite layer are over...
2018/0277671 COMPOUND SEMICONDUCTOR FIELD EFFECT TRANSISTOR GATE LENGTH SCALING
A compound semiconductor transistor may include a channel layer. The compound semiconductor transistor may also include a dielectric layer on the channel...
2018/0277670 SINGLE-ELECTRON TRANSISTOR WITH SELF-ALIGNED COULOMB BLOCKADE
Semiconductor devices include a thin channel region formed on a buried insulator. A source and drain region is formed on the buried insulator, separated from...
2018/0277669 METHOD AND STRUCTURE FOR FORMING IMPROVED SINGLE ELECTRON TRANSISTOR WITH GAP TUNNEL BARRIERS
A semiconductor device includes a single electron transistor (SET) having an island region, a bottom source/drain region under the island region, and a top...
2018/0277668 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A performance of a semiconductor device is improved. A semiconductor device includes two element portions and an interposition portion interposed between the...
2018/0277667 SEMICONDUCTOR DEVICE
A semiconductor device includes first and second electrodes, first semiconductor region of first conductivity type between the first and second electrodes, a...
2018/0277666 BIPOLAR JUNCTION TRANSISTOR AND INTEGRATED CIRCUIT DEVICE
A bipolar junction transistor includes a semiconductor substrate, a fin structure, an epitaxial emitter, an epitaxial collector and a gate. The fin structure...
2018/0277665 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
A semiconductor device includes a substrate, at least one first semiconductor layer, and at least one second semiconductor layer. The at least one first...
2018/0277664 METHOD FOR FORMING FLASH MEMORY UNIT
A method for forming flash memory units is provided. After a logic gate in a select gate PMOS transistor area is separated from a logic gate in a control gate...
2018/0277663 REDUCING BENDING IN PARALLEL STRUCTURES IN SEMICONDUCTOR FABRICATION
A first layer of a first material is deposited on a first structure and a second structure, a surface of the first structure being disposed substantially...
2018/0277662 HIGH-SPEED SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
A method for forming a semiconductor device is provided. The method includes forming a gate structure over a fin structure. The method includes forming a hard...
2018/0277661 THIN FILM TRANSISTOR SUBSTRATE, MANUFACTURING METHOD FOR THIN FILM TRANSISTOR SUBSTRATE, AND LIQUID CRYSTAL DISPLAY
A first semiconductor layer is opposed to a first gate electrode with intermediation of a gate insulation film, and is formed of amorphous silicon. First and...
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