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Patent # Description
2018/0277660 PRODUCTION METHOD OF THIN-FILM TRANSISTOR, THIN-FILM TRANSISTOR, DISPLAY APPARATUS, AND FINGERPRINT RECOGNITION...
This disclosure discloses a production method of a thin-film transistor, a thin-film transistor, a display apparatus, and a fingerprint recognition unit. Said...
2018/0277659 VERTICAL QUANTUM TRANSISTOR
A vertical transistor includes two portions of a gate conductor that extend within a layer of insulator. An opening extending through the later of insulator...
2018/0277658 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A method for manufacturing a semiconductor device is provided by follows. A fin is formed over a substrate. A spacer is formed on a sidewall of a first portion...
2018/0277657 COMPOUND SEMICONDUCTOR FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED GATE
A compound semiconductor field effect transistor (FET) may include a channel layer. The semiconductor FET may also include an oxide layer, partially surrounded...
2018/0277656 UNIFORM LOW-K INNER SPACER MODULE IN GATE-ALL-AROUND (GAA) TRANSISTORS
Embodiments are directed to a method of forming a stacked nanosheet and resulting structures having uniform low-k inner spacers. A nanosheet stack is formed...
2018/0277655 SOURCE/DRAIN PARASITIC CAPACITANCE REDUCTION IN FINFET-BASED SEMICONDUCTOR STRUCTURE HAVING TUCKED FINS
A method of reducing parasitic capacitance includes providing a starting semiconductor structure, the starting semiconductor structure including a ...
2018/0277654 GATE STRUCTURE OF A SEMICONDUCTOR DEVICE
A CMOS semiconductor device includes a substrate comprising an isolation region separating a P-active region and an N-active region. The CMOS semiconductor...
2018/0277653 SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
A semiconductor structure and a fabrication method are provided. The fabrication method includes: providing a substrate; forming a gate dielectric layer on the...
2018/0277652 FIELD EFFECT TRANSISTOR (FET) WITH A GATE HAVING A RECESSED WORK FUNCTION METAL LAYER AND METHOD OF FORMING THE FET
A hash table method and structure comprises a processor that receives a plurality of access requests for access to a storage device. The processor performs a...
2018/0277651 COMPLEMENTARY GALLIUM NITRIDE INTEGRATED CIRCUITS
An embodiment of a complementary GaN integrated circuit includes a GaN layer with a first bandgap. A second layer with a second bandgap is formed on the GaN...
2018/0277650 SEMICONDUCTOR DEVICE
A semiconductor device includes a semiconductor layer provided on a substrate, a drain electrode and a source electrode provided on the semiconductor layer,...
2018/0277649 SELF-ALIGNED PROCESS FOR SUB-10NM FIN FORMATION
Methods of sub-10 nm fin formation are disclosed. One method includes patterning a first dielectric layer on a substrate to form one or more projections and a...
2018/0277648 UNMERGED EPITAXIAL PROCESS FOR FINFET DEVICES WITH AGGRESSIVE FIN PITCH SCALING
Methods for forming a semiconductor device include forming a first spacer on a plurality of fins. A second spacer is formed on the first spacer, the second...
2018/0277647 NONVOLATILE MEMORY DEVICE
A nonvolatile memory device includes a semiconductor substrate, a tunnel insulation layer disposed on the semiconductor substrate, a charge trap layer disposed...
2018/0277646 HIGH ELECTRON MOBILITY TRANSISTOR
A high electron mobility transistor (HEMT) includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer...
2018/0277645 GATE CUTS AFTER METAL GATE FORMATION
Structures involving a field-effect transistor and methods for forming a structure that involves a field-effect transistor. A first metal gate electrode and a...
2018/0277644 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
The present disclosure relates to the technical field of semiconductors, and discloses a semiconductor device and a manufacturing method therefor. The...
2018/0277643 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVING DEVICE, VEHICLE,...
A semiconductor device according to an embodiment includes a silicon carbide layer, an insulating layer, and a region provided between the silicon carbide...
2018/0277642 Semiconductor Device with Transistor Cells and Enhancement Cells
A semiconductor device includes transistor cells and enhancement cells. Each transistor cell includes a body zone that forms a first pn junction with a drift...
2018/0277641 METHOD FOR PROCESSING A SEMICONDUCTOR WORKPIECE AND SEMICONDUCTOR DEVICE
A method for processing a semiconductor workpiece, including: forming a trench structure in a first region of a semiconductor workpiece, extending from a...
2018/0277640 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
According to one embodiment, a semiconductor device includes a semiconductor element having a substrate with at least two bending portions formed on a first...
2018/0277639 NUCLEATION LAYER FOR GROWTH OF III-NITRIDE STRUCTURES
Nucleation layers for growth of III-nitride structures, and methods for growing the nucleation layers, are described herein. A semiconductor can include a...
2018/0277638 SEMICONDUCTOR DEVICE
A current sensing part that detects overcurrent of a main semiconductor element is arranged on a same silicon carbide base as the main semiconductor element....
2018/0277637 Silicon Carbide Semiconductor Device and Method of Manufacturing
A semiconductor device includes a trench structure extending from a first surface into a silicon carbide semiconductor body. The trench structure includes an...
2018/0277636 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Semiconductor device 101 includes semiconductor substrate 10, drift layer 20, first electrode 50, and second electrode 60. Semiconductor substrate 10 is of a...
2018/0277635 SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
A silicon carbide epitaxial substrate has a silicon carbide single-crystal substrate and a silicon carbide layer. An average value of carrier concentration in...
2018/0277634 SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATING MACHINE
A semiconductor device of an embodiment includes first and second electrodes, a first gate electrode, a semiconductor layer disposed between the first...
2018/0277633 SEMICONDUCTOR INTEGRATED CIRCUIT WITH GUARD RING
A semiconductor integrated circuit includes a first conduction-type semiconductor region, a second conduction-type first impurity region, and a guard ring...
2018/0277632 POROUS SEMICONDUCTOR HANDLE SUBSTRATE
An integrated circuit (IC) may include an active device layer on a front-side surface of a semiconductor device substrate. The IC may also include a front-side...
2018/0277631 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
According to one embodiment, the joint part has a diameter larger than a diameter of the first columnar part and a diameter of the second columnar part. The...
2018/0277630 NANOSHEET CMOS TRANSISTORS
Methods of forming integrated chips include forming a respective stack of sheets in two regions, each stack having first layers and second layers. The second...
2018/0277629 METHOD OF MANUFACTURING A SUBSTRATE WITH REDUCED THREADING DISLOCATION DENSITY
A method of manufacturing a substrate with reduced threading dislocation density is disclosed, which comprises: (i) at a first temperature, forming a first...
2018/0277628 NANOSHEET CMOS TRANSISTORS
Integrated chips and methods of forming the same include forming a respective stack of sheets in two regions, each stack having first layers and second layers....
2018/0277627 Nanowire FinFET Transistor
Semiconductor devices and methods of forming the same are provided. A semiconductor device includes a substrate having a fin. A first nanowire is disposed on...
2018/0277626 CO-INTEGRATION OF SILICON AND SILICON-GERMANIUM CHANNELS FOR NANOSHEET DEVICES
Nanosheet semiconductor devices and methods of forming the same include forming a first stack having layers of a first material and layers of a second...
2018/0277625 SEMICONDUCTOR DEVICE
A semiconductor device according to an embodiment includes a semiconductor substrate, source electrodes, drain electrodes provided between the source...
2018/0277624 OSCILLATING CAPACITOR ARCHITECTURE IN POLYSILICON FOR IMPROVED CAPACITANCE
A system and method for fabricating metal insulator metal capacitors while managing semiconductor processing yield and increasing capacitance per area are...
2018/0277623 SURFACE AREA ENHANCEMENT FOR STACKED METAL-INSULATOR-METAL (MIM) CAPACITOR
A method for forming a metal-insulator-metal (MIM) capacitor on a semiconductor substrate is presented. The method includes forming a first electrode defining...
2018/0277622 SEMICONDUCTOR CAPACITOR AND POWER SUPPLY MODULE
A semiconductor capacitor includes a semiconductor substrate having a first and second principal surfaces. A first set of one or more trenches is formed on the...
2018/0277621 SURFACE AREA ENHANCEMENT FOR STACKED METAL-INSULATOR-METAL (MIM) CAPACITOR
A method for forming a metal-insulator-metal (MIM) capacitor on a semiconductor substrate is presented. The method includes forming a first electrode defining...
2018/0277620 DENSELY STACKED METAL-INSULATOR-METAL CAPACITOR AND METHOD OF FORMING THE SAME
A metal-insulator-metal capacitor (MIM cap) includes a dielectric layer disposed over a substrate three contacts. A stacked structure of first and second metal...
2018/0277619 CAPACITOR, METHOD FOR MANUFACTURING SAME, AND WIRELESS COMMUNICATION DEVICE USING SAME
Provided is a capacitor that has good bonding between the dielectric layer and the conductive layer, has a characteristic of low ESR, and keeps leak current...
2018/0277618 SEMICONDUCTOR DEVICE HAVING RESISTANCE ELEMENTS AND FABRICATION METHOD THEREOF
A semiconductor device includes as a resistance element a first polycrystalline silicon and a second polycrystalline silicon containing impurities, such as...
2018/0277617 RESISTOR HAVING INCREASING RESISTANCE DUE TO INCREASING VOLTAGE
A resistor comprises a substrate, an upper ohmic region disposed on a selective one of an upper surface and a lower surface of the substrate and a lower ohmic...
2018/0277616 ORGANIC LIGHT-EMITTING DISPLAY DEVICE
An organic light-emitting display device includes a substrate including a display area and a peripheral area surrounding the display area. The display area...
2018/0277615 SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND ELECTRONIC DEVICE
A load, a transistor which controls a current value supplied to the load, a capacitor, a power supply line, and first to third switches are provided. After a...
2018/0277614 Displays With Silicon and Semiconducting-Oxide Top-Gate Thin-Film Transistors
An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display...
2018/0277613 ORANIC LIGHT EMITTING DISPLAY DEVICES
An OLED device and a method of manufacturing the same, the OLED device including a substrate having a pixel area and a transmission area; a pixel circuit on...
2018/0277612 METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY DEVICE
A method of manufacturing an organic light-emitting display device includes forming pixel electrodes on a substrate, forming a first protective layer with a...
2018/0277611 ORGANIC LIGHT EMITTING DEVICE
An organic light emitting device includes four sub-organic light emitting devices. The first device includes a first anode, a first common light emitting...
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