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Patent # Description
2018/0277407 SUBSTRATE PROCESSING DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A substrate processing device capable of stabilizing an etching amount of a metal film provided on a substrate is provided. The substrate processing device...
2018/0277406 SUBSTRATE TREATMENT APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
According to an embodiment, a substrate treatment apparatus includes a vacuum chamber, a cylindrical member, a gas feed member, a support member and a...
2018/0277405 SUBSTRATE PROCESSING APPARATUS
A substrate processing apparatus includes: a single frequency process chamber installed inside a process module and for processing a substrate on which an...
2018/0277404 Press, Actuator Set and Method for Encapsulating Electronic Components with at Least Two Individual...
The invention relates to a press for encapsulating electronic components mounted on a carrier, comprising: at least two press parts displaceable relative to...
2018/0277403 METHOD AND DEVICE FOR BONDING SUBSTRATES
A method and corresponding device for bonding a first contact surface of a first substrate to a second contact surface of a second substrate. The method...
2018/0277402 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
Provided is a plasma processing apparatus or method in which a procedure containing processing steps of supplying a predetermined amount of processing gas into...
2018/0277401 SUBSTRATE PROCESSING METHOD AND APPARATUS
A substrate processing method which can clean a peripheral portion of a substrate after polishing and can check the cleaning effect of the peripheral portion...
2018/0277400 SEMICONDUCTOR MANUFACTURING APPARATUS
According to an embodiment, a semiconductor manufacturing apparatus includes a process chamber, a load lock chamber, a gas purge mechanism and a movement...
2018/0277399 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
A substrate processing apparatus includes a processing liquid distributing member that partitions, by an inner wall surface, at least part of a processing...
2018/0277398 SUBSTRATE PROCESSING APPARATUS
A discharge port 31 is arranged inside a chamber 9. A circulation flow passage 50 circulates a processing liquid, while maintaining the processing liquid at a...
2018/0277397 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
In a manufacturing method of a semiconductor device, by arranging a lead in the vicinity of a gate portion serving as a resin injection port of a mold, a void...
2018/0277396 CHIP MODULE WITH STIFFENING FRAME AND ORTHOGONAL HEAT SPREADER
An integrated circuit (IC) chip module includes a carrier, a stiffening frame, an IC chip, and a first directional heat spreader. A second directional heat...
2018/0277395 METHOD FOR MANUFACTURING MULTILAYER CERAMIC SUBSTRATE
A method of producing a multi-layer ceramic substrate includes the steps of: (A) preparing a first ceramic green sheet with a thermal expansion layer arranged...
2018/0277394 SEMICONDUCTOR DEVICE WITH TIERED PILLAR AND MANUFACTURING METHOD THEREOF
A semiconductor device having one or more tiered pillars and methods of manufacturing such a semiconductor device are disclosed. The semiconductor device may...
2018/0277393 METHOD FOR THE PRODUCTION OF A CONNECTING ELEMENT, CONNECTING ELEMENT, AND SENSOR ARRANGEMENT
The invention relates to a method for producing a connecting element, wherein electrical connections are defined by selective stamping-out. The invention...
2018/0277392 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and...
2018/0277391 Method for Manufacturing a Semiconductor Device Comprising Etching a Semiconductor Material
According to embodiments, a method for manufacturing a semiconductor device includes forming a mask comprising a pattern of inert structures on a side of a...
2018/0277390 METAL PATTERN FORMING METHOD
A metal pattern forming method according to an embodiment includes forming a metal film on a surface of a substrate by an electroless plating method, the...
2018/0277389 HEATING METHOD, FILM FORMING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND FILM FORMING APPARATUS
There is provided heating method for heating a substrate having a germanium film or a silicon germanium film formed on a surface of the substrate, the method...
2018/0277388 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS
A manufacturing method of a semiconductor device according to an embodiment implants impurities into a central portion of a polishing target film or an outer...
2018/0277387 GASES FOR LOW DAMAGE SELECTIVE SILICON NITRIDE ETCHING
Silicon nitride plasma etching processes are disclosed that minimize the SiN roughness layer on a substrate having a SiN layer thereon by simultaneously...
2018/0277386 METHOD OF ANISOTROPIC EXTRACTION OF SILICON NITRIDE MANDREL FOR FABRICATION OF SELF-ALIGNED BLOCK STRUCTURES
A method of preparing a self-aligned block (SAB) structure is described. The method includes providing a substrate having raised features defined by a first...
2018/0277385 METHOD OF QUASI-ATOMIC LAYER ETCHING OF SILICON NITRIDE
A method of etching is described. The method includes providing a substrate having a first material containing silicon nitride and a second material that is...
2018/0277384 SLURRY FOR POLISHING OF INTEGRATED CIRCUIT PACKAGING
A slurry for chemical mechanical planarization includes water, 1-3 wt. % of abrasive particles having an average diameter of at least 10 nm and less than 100...
2018/0277383 FLUID DISPENSE METHODOLOGY AND APPARATUS FOR IMPRINT LITHOGRAPHY
A method of can be used to generating a fluid droplet pattern for an imprint lithography process. A fluid dispense head can include a set of fluid dispense...
2018/0277382 PLANARIZATION METHOD
A planarization method includes providing a substrate having a semiconductor structure formed thereon. A dielectric layer is formed on the substrate, and a...
2018/0277381 METHOD OF PLANARIZING SEMICONDUCTOR DEVICE
A method of planarizing a semiconductor device includes forming a first region and a second region on a semiconductor substrate. The first region has a larger...
2018/0277380 PLANARIZATION PROCESSING DEVICE
A planarization processing device for polishing a substrate, e.g., a semiconductor wafer, includes two planarization processing sections (SP1, SP2) that each...
2018/0277379 LIQUID MIXTURE AND METHOD FOR SELECTIVELY WET ETCHING SILICON GERMANIUM
A liquid mixture for etching a substrate includes a first liquid comprising one of: (i) percarboxylic acid comprising 3 to 70 mass. % of the liquid mixture; or...
2018/0277378 VORTEX PATTERN WET PROCESSING TOOL AND ETCHING METHOD
A wet chemical processing tool is provided, which includes an assembly of a container and at least three nozzles. The container includes a volume configured to...
2018/0277377 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
A plasma processing apparatus processes a film layer to be processed disposed in advance on a surface of a wafer by using a plasma being switched on and off in...
2018/0277376 FABRICATION METHOD FOR THIN FILM TRANSISTOR, THIN FILM TRANSISTOR AND DISPLAY APPARATUS
The present application discloses a method for fabricating a thin film transistor including the steps of: sequentially forming an active layer, a gate...
2018/0277375 MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE
A manufacturing method of a semiconductor device comprises forming an ohmic electrode on a surface of a semiconductor substrate, the ohmic electrode including...
2018/0277374 OPTICAL DEVICE AND EXCIMER LASER ANNEALING EQUIPMENT
The embodiments of the present disclosure provide an optical device and an excimer laser annealing equipment. The optical device includes: a light source; a...
2018/0277373 SEMICONDUCTOR DEVICE STRUCTURES INCLUDING TWO-DIMENSIONAL MATERIAL STRUCTURES, AND RELATED SEMICONDUCTOR...
A method of forming a semiconductor device structure comprises forming at least one 2D material over a substrate. The at least one 2D material is treated with...
2018/0277372 LASER ANNEALING METHOD AND LASER ANNEALING DEVICE
An annealing object is prepared in which an absorbing film formed of a metal is formed on a surface of a wafer formed of silicon carbide into which an...
2018/0277371 SEMICONDUCTOR POWER DEVICE AND METHOD FOR PRODUCING SAME
A method for producing a semiconductor power device includes forming a gate trench from a surface of the semiconductor layer toward an inside thereof. A first...
2018/0277370 HYBRID CARBON HARDMASK FOR LATERAL HARDMASK RECESS REDUCTION
Implementations of the present disclosure relate to improved hardmask materials and methods for patterning and etching of substrates. A plurality of hardmasks...
2018/0277369 REWORK OF PATTERNED DIELECTRIC AND METAL HARDMASK FILMS
A method for reworking a semiconductor device includes, in a pattern stack formed on an interlevel dielectric (ILD) layer, polishing the pattern stack to...
2018/0277368 POST GROWTH HETEROEPITAXIAL LAYER SEPARATION FOR DEFECT REDUCTION IN HETEROEPITAXIAL FILMS
A method for reducing crystalline defects in a semiconductor structure is presented. The method includes epitaxially growing a first crystalline material over...
2018/0277367 POST GROWTH HETEROEPITAXIAL LAYER SEPARATION FOR DEFECT REDUCTION IN HETEROEPITAXIAL FILMS
A method for reducing crystalline defects in a semiconductor structure is presented. The method includes epitaxially growing a first crystalline material over...
2018/0277366 FEMTOSECOND LASER-INDUCED FORMATION OF SINGLE CRYSTAL PATTERNED SEMICONDUCTOR SURFACE
The interaction between multiple intense ultrashort laser pulses and solids typically produces a regular nanoscale surface corrugation. A coupled mechanism has...
2018/0277365 Methods of Growing CdTe-Based Materials At High Rates
Systems and methods for growing high-quality CdTe-based materials at high growth rates are provided. According to an aspect of the invention, a method includes...
2018/0277364 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND RECORDING MEDIUM
There is provided a technique that includes (a) pre-etching a surface of a substrate made of single crystal silicon by supplying a first etching gas to the...
2018/0277363 COMPOUND SEMICONDUCTOR SUBSTRATE WITH SiC LAYER
A compound semiconductor substrate having a desired quality is provided. A compound semiconductor substrate has an SiC (silicon carbide) layer, an AlN (aluminum...
2018/0277362 Method of Surface Localized Pore Sealing of Porous Dielectric Material
Provided are a method of locally sealing only pores present in a surface part of a porous dielectric material by forming a polymer thin film through an...
2018/0277361 METHOD OF MATERIAL DEPOSITION
A method and apparatus for material deposition onto a sample to form a protective layer composed of at least two materials that have been formulated and...
2018/0277360 Method and Composition for Providing Pore Sealing Layer on Porous Low Dielectric Constant Films
Described herein is a method and composition comprising same for sealing the pores of a porous low dielectric constant ("low k") layer by providing an...
2018/0277359 UNDER LAYER COMPOSITION AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Under layer composition and methods of manufacturing semiconductor devices are disclosed. The method of manufacturing semiconductor device includes the...
2018/0277358 LITHOGRAPHIC TECHNIQUE FOR FEATURE CUT BY LINE-END SHRINK
A technique for patterning a workpiece such as an integrated circuit workpiece is provided. In an exemplary embodiment, the method includes receiving a dataset...
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