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Patent # Description
2018/0286699 POLISHING PROCESS FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE
A method for forming a semiconductor device structure is provided. The method includes providing a wafer over a polishing platen. The wafer includes a metal...
2018/0286698 Lithographic Technique Incorporating Varied Pattern Materials
Patterning techniques are disclosed that can relax overlay requirements and/or increase integrated circuit design flexibility. An exemplary method includes...
2018/0286697 METHOD FOR SELECTIVE ETCHING OF A BLOCK COPOLYMER
A method for etching an assembled block copolymer layer including first and second polymer phases, in which the etching method includes exposing the assembled...
2018/0286696 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
In a substrate processing apparatus for processing a substrate mounted on a mounting table in a processing chamber by supplying a gas to the substrate, the...
2018/0286694 EMBEDDED MEMORY IN BACK-END-OF-LINE LOW-K DIELECTRIC
A low-k dielectric layer, such as SiCOH, with high and stable chemical mechanical polishing (CMP) removal rate (RR) is disclosed. The polishing rate enhancer...
2018/0286693 Pitch Reduction Technology Using Alternating Spacer Depositions During the Formation of a Semiconductor Device...
A method for patterning a layer increases the density of features formed over an initial patterning layer using a series of self-aligned spacers. A layer to be...
2018/0286692 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
The present invention provides a method for manufacturing a semiconductor device including following steps. A substrate, a hard mask layer disposed on the...
2018/0286691 ETCHING METHOD AND ETCHING APPARATUS
There is provided an etching method which includes supplying an etching gas including an H.sub.2 gas or an NH.sub.3 gas to a target substrate having a...
2018/0286690 METHOD OF PROCESSING WORKPIECE
A plate-shaped workpiece includes a layered body containing metal which is formed in superposed relation to projected dicing lines. The workpiece is processed...
2018/0286689 METHOD OF PROCESSING WORKPIECE
A method of processing a plate-shaped workpiece that includes layered bodies containing metal which are formed in superposed relation to projected dicing...
2018/0286688 METHOD OF PROCESSING WORKPIECE
A method of processing a plate-shaped workpiece that includes on a reverse side thereof a layered body containing metal which is formed in superposed relation...
2018/0286687 ELECTRONIC DEVICES WITH COMPONENTS FORMED BY LATE BINDING USING SELF-ASSEMBLED MONOLAYERS
Embodiments include devices and methods, including a method for processing a substrate. The method includes providing a substrate including a first portion and...
2018/0286686 METAL GATE AND MANUFACTURING METHOD THEREOF
The present disclosure provides a semiconductor structure, including an active region with a first surface; an isolated region having a second surface,...
2018/0286685 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A method for manufacturing a semiconductor device comprises: a stacking process that stacks a p-type semiconductor layer of Group III nitride containing a...
2018/0286684 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A technique that recovers from degradation in crystalline nature in an ion-implanted region is provided. A method of manufacturing a semiconductor device,...
2018/0286683 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF
A semiconductor device includes an n.sup.--type drift layer of an formed on an n.sup.+-type SiC substrate; a p-type layer provided on a surface opposite that...
2018/0286682 SELECTIVE GAS ETCHING FOR SELF-ALIGNED PATTERN TRANSFER
Selective gas etching for self-aligned pattern transfer uses a first block and a separate second block formed in a sacrificial layer to transfer critical...
2018/0286681 METHODS OF IDENTIFYING SPACE WITHIN INTEGRATED CIRCUIT STRUCTURE AS MANDREL SPACE OR NON-MANDREL SPACE
The disclosure is directed to methods of identifying a space within an integrated circuit structure as a mandrel space or a non-mandrel space. One method may...
2018/0286680 REMOVAL OF TRILAYER RESIST WITHOUT DAMAGE TO UNDERLYING STRUCTURE
A method for semiconductor processing includes removing, from a first region of a semiconductor device, a top layer of a trilayer photoresist structure formed...
2018/0286679 FORMING SEMICONDUCTOR DEVICE BY PROVIDING AN AMORPHOUS SILICON CORE WITH A HARD MASK LAYER
The invention relates to a method of forming a semiconductor device by patterning a substrate by providing an amorphous silicon layer on the substrate and...
2018/0286678 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Provided herein is a method for manufacturing a semiconductor device. The method may include: forming a stack including at least one first material layer and...
2018/0286677 EPITAXIAL WAFER MANUFACTURING METHOD AND EPITAXIAL WAFER
Provided is an epitaxial wafer having an excellent gettering capability and a suppressed formation of epitaxial defects. The epitaxial wafer has a specified...
2018/0286676 METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE
A method of manufacturing an integrated circuit device and an integrated circuit device prepared according to the method, the method including forming a...
2018/0286675 METHOD FOR FORMING DOPED METAL OXIDE FILMS ON A SUBSTRATE BY CYCLICAL DEPOSITION AND RELATED SEMICONDUCTOR...
Methods for forming a doped metal oxide film on a substrate by cyclical deposition are provided. In some embodiments, methods may include contacting the...
2018/0286674 TWO-STEP PROCESS FOR GAPFILLING HIGH ASPECT RATIO TRENCHES WITH AMORPHOUS SILICON FILM
Methods for gapfilling semiconductor device features, such as high aspect ratio trenches, with amorphous silicon film are provided. First, a substrate having...
2018/0286673 Method of Filling Recess and Processing Apparatus
A method of filling a germanium film in a recess on a substrate to be processed having an insulating film on which the recess is formed on a surface of the...
2018/0286672 SEMICONDUCTOR DEVICE WITH AMORPHOUS SILICON FILLED GAPS AND METHODS FOR FORMING
Amorphous silicon-filled gaps may be formed having no or a low occurrence of voids in the amorphous silicon fill, while maintaining a smooth exposed silicon...
2018/0286671 PRODUCTION METHOD FOR SEMICONDUCTOR
There is provided a method for producing a semiconductor device, the method facilitating removal of a growth substrate from a semiconductor layer. A...
2018/0286670 ADHESION OF POLYMERS ON SILICON SUBSTRATES
Embodiments are directed to a method and resulting structures for improving the adhesion of a polymer to the surface of a substrate. A substrate is formed and...
2018/0286669 Two-Step Process for Silicon Gapfill
Methods for seam-less gap fill comprising forming a flowable film by PECVD, treating the flowable film to form an Si--X film where X=C, O or N and curing the...
2018/0286668 CVD Mo DEPOSITION BY USING MoOCl4
A method of forming a molybdenum-containing material on a substrate is described, in which the substrate is contacted with molybdenum oxytetrachloride...
2018/0286667 SELECTIVE GROWTH METHOD
There is provided a selective growth method of selectively growing a thin film on an underlayer on which an insulating film and a conductive film are exposed,...
2018/0286666 REMOVING A RESIDUAL PHOTO-MASK FENCE IN PHOTOLITHOGRAPHY
A first material is filled during a semiconductor fabrication process in a space bound on at least one side by a fence formation created as a result of an...
2018/0286665 Film Forming Method and Vertical Thermal Processing Apparatus
A method of performing a film formation on target substrates in a state where a substrate holder for holding the target substrates in a shelf shape is loaded...
2018/0286664 EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
An epitaxial substrate and a method of manufacturing the same are provided. The epitaxial substrate includes a handle substrate, a heat dissipation layer on...
2018/0286663 METHOD OF REFORMING INSULATING FILM DEPOSITED ON SUBSTRATE WITH RECESS PATTERN
A method of reforming an insulating film deposited on a substrate having a recess pattern constituted by a bottom and sidewalls, includes: providing the film...
2018/0286662 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM, AND SUBSTRATE...
By sequentially performing, a plurality of times, a step of supplying a mixed gas of an organic metal-containing source gas and an inert gas to a process...
2018/0286661 PROCESS OF DEPOSITING SILICON NITRIDE (SiN) FILM ON NITRIDE SEMICONDUCTOR
A process of forming a silicon nitride film on a nitride semiconductor layer as a passivation film is disclosed. The process first set a temperature lower than...
2018/0286660 APPARATUS AND METHOD FOR ELECTRODEPOSITION OF METALS WITH THE USE OF AN IONICALLY RESISTIVE IONICALLY PERMEABLE...
An apparatus for electroplating metal on a semiconductor substrate with improved plating uniformity includes in one aspect: a plating chamber configured to...
2018/0286659 Mass-Selective Axial Ejection Linear Ion Trap
A linear ion trap includes a quadrupole having four substantially parallel conductive rods that are substantially coextensive in the axial direction. The rods...
2018/0286658 ION ANALYSIS DEVICE
To reduce contamination of the apparatus with an additive and to quickly switch spraying and stopping of the additive, provided is an ion analyzer including:...
2018/0286657 ION TRANSFER FROM ELECTRON IONIZATION SOURCES
An example system includes an electron ionization ion source and a mass analyzer. The electron ion source is configured, during operation of the system, to...
2018/0286656 SYSTEMS AND METHODS FOR ELECTRON IONIZATION ION SOURCES
A mass spectrometer system includes an ion source and a controller. The ion source includes a body having a length along a source axis from the first end to...
2018/0286655 PARTICLE BEAM MASS SPECTROMETER AND PARTICLE MEASUREMENT METHOD BY MEANS OF SAME
The present invention relates to a particle beam mass spectrometer and particle measurement method by means of same. More particularly, the present invention...
2018/0286654 MULTIPOLE WITH A HOLDING DEVICE FOR HOLDING THE MULTIPOLE, HOLDING DEVICE OF A MULTIPOLE, MASS SPECTROMETER...
The invention relates to a multipole (32) with a holding device (10) for holding the multipole (32), for example a quadrupole in a mass spectrometer or on a...
2018/0286653 Electrodynamic Mass Analysis
An electrodynamic mass analysis system which has the capability of filtering unwanted species from an extracted ion beam without the use of a mass analyzer...
2018/0286652 CAPACITIVELY COUPLED REIMS TECHNIQUE AND OPTICALLY TRANSPARENT COUNTER ELECTRODE
A method of analysis is disclosed comprising providing a sample on an insulating substrate such as a petri dish (4) and contacting e.g. the rear surface of the...
2018/0286651 SYSTEMS AND METHODS FOR TRANSFER OF IONS FOR ANALYSIS
The invention generally relates to systems and methods for transferring ions for analysis. In certain embodiments, the invention provides a system for...
2018/0286650 MULTIMODE CONFIGURABLE SPECTROMETER
The disclosure provides multimode configurable spectrometers, a method of operating a multimode configurable spectrometer, and an optical monitoring system. In...
2018/0286649 Implementation of Continuous Wave Carbon Dioxide Infrared Laser on a Quadrupole-Orbitrap-Linear Ion Trap Hybrid...
A new approach is described herein for outfitting a mass spectrometer with an infrared laser that provides an improved method of ion dissociation. One...
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