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Patent # Description
2018/0301604 Packaged UV-LED Device With Anodic Bonded Silica Lens And No UV-Degradable Adhesive
A packaged UV-LED device comprises a die carrier member having a cup-shaped recess, a fused silica lens member that is anodic bonded to the die carrier member,...
2018/0301603 LIGHT EMITTING DEVICE
A light emitting device includes a base having a conductor wiring, at least one light emitting element mounted on the base and electrically connected to the...
2018/0301602 ETCHED TRENCHES IN BOND MATERIALS FOR DIE SINGULATION, AND ASSOCIATED SYSTEMS AND METHODS
Etched trenches in a bond material for die singulation, and associated systems and methods are disclosed. A method for solid state transducer device...
2018/0301601 MATERIAL FOR AN ELECTRONIC DEVICE
A material for an electronic device includes a substance arranged to emit light in a predetermined range of wavelength upon receiving an excitation energy,...
2018/0301600 LIGHT EMITTING DEVICE, RESIN PACKAGE, RESIN-MOLDED BODY, AND METHODS FOR MANUFACTURING LIGHT EMITTING DEVICE,...
A method of manufacturing a light emitting device having a resin package which provides an optical reflectivity equal to or more than 70% at a wavelength...
2018/0301599 SEMICONDUCTOR LIGHT EMITTING DEVICE
A semiconductor light emitting device includes a conductive substrate and a first metal layer disposed on the substrate. The first metal layer is formed so as...
2018/0301598 LIGHT-EMITTING DIODE CHIP AND METHOD OF PRODUCING A LIGHT-EMITTING DIODE CHIP
A light-emitting diode chip includes a semiconductor layer sequence based on InGaAlAsP and generates visible light or near-infrared radiation, a current...
2018/0301597 LIGHT-EMITTING ELEMENT
Disclosed according to one embodiment is a light-emitting element comprising: a light-emitting structure comprising a first semiconductor layer, an active...
2018/0301596 SEMICONDUCTOR LIGHT EMITTING DIODE
A semiconductor light emitting diode is disclosed. The semiconductor light emitting diode includes a first conductive semiconductor layer, a second conductive...
2018/0301595 SEMICONDUCTOR CHIP
A semiconductor chip (20) is described comprising a semiconductor layer sequence (10) based on a phosphide compound semiconductor material or arsenide compound...
2018/0301594 METHOD FOR PRODUCING OPTOELECTRONIC DEVICES COMPRISING LIGHT-EMITTING DIODES
A method for producing optoelectronic devices, including the following successive steps: providing a substrate having a first face; on the first face, forming...
2018/0301593 LIGHT EMITTING DIODE HAVING IMPROVED QUANTUM EFFICIENCY AT LOW INJECTION CURRENT
Provided is a light emitting semiconductor structure that operates as a light emitting diode (LED). In embodiments of the invention, the light emitting...
2018/0301591 OPTICAL SEMICONDUCTOR ELEMENT AND METHOD OF DRIVING OPTICAL SEMICONDUCTOR ELEMENT
An optical semiconductor element includes: an optical waveguide body; a first electrode that is disposed on a second clad layer; a second electrode that is...
2018/0301590 METHOD FOR MANUFACTURING AT LEAST ONE OPTOELECTRONIC SEMICONDUCTOR CHIP, OPTOELECTRONIC SEMICONDUCTOR CHIP, AND...
Disclosed is an optoelectronic semiconductor chip (10) comprising: --a succession of semiconductor layers (1) that has a main plane of extension, an active...
2018/0301589 DEVICES INCORPORATING INTEGRATED DETECTORS AND ULTRA-SMALL VERTICAL CAVITY SURFACE EMITTING LASER EMITTERS
A semiconductor device includes a detector structure. The detector structure includes an integrated circuit on a substrate, and a photo detector on an upper...
2018/0301588 IMAGE CAPTURING MODULE AND MANUFACTURING METHOD THEREOF
An image capturing module including a light emitting element, a sensing element, and a circuit substrate is provided. The circuit substrate includes a...
2018/0301587 MONOLITHICALLY INTEGRATED HIGH VOLTAGE PHOTOVOLTAICS AND LIGHT EMITTING DIODE WITH TEXTURED SURFACE
A method of forming an electrical device that includes epitaxially growing a first conductivity type semiconductor material of a type III-V semiconductor on a...
2018/0301586 MONOLITHICALLY INTEGRATED HIGH VOLTAGE PHOTOVOLTAICS AND LIGHT EMITTING DIODE WITH TEXTURED SURFACE
A method of forming an electrical device that includes epitaxially growing a first conductivity type semiconductor material of a type III-V semiconductor on a...
2018/0301585 LIGHT RECEIVING AND EMITTING ELEMENT MODULE AND SENSOR DEVICE
A light receiving and emitting element module includes a wiring substrate; a light emitting element and a light receiving element which are disposed on the...
2018/0301584 Electrical Devices Making Use of Counterdoped Junctions
An electrical device includes a counterdoped heterojunction selected from a group consisting of a pn junction or a p-i-n junction. The counterdoped junction...
2018/0301583 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device includes a substrate, a buried doped layer, a first doped well, a multiplication region and a first contact doped region. The substrate...
2018/0301582 METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE
In manufacturing a crystalline silicon-based solar cell having an intrinsic silicon-based thin film and a conductive silicon-based thin film in this order on a...
2018/0301581 METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE
In manufacturing a crystalline silicon-based solar cell, a first intrinsic thin-film is formed on a conductive single-crystalline silicon substrate, and then a...
2018/0301580 COMPOUND SEMICONDUCTOR SOLAR CELL
According to an aspect of the present invention, there is provided a compound semiconductor solar cell, comprising a first cell, the first cell including: a...
2018/0301579 BORON NITRIDE CARBON ALLOY SOLAR CELLS
Solar cells fabricated from p-n junctions of boron nitride nanotubes alloyed with carbon are described. Band gaps of boron nitride carbon alloys are tailored...
2018/0301578 PHOTOVOLTAIC-ELECTROCHROMIC WINDOWS
The embodiments herein relate to electrochromic windows that include a transparent photovoltaic device coating disposed thereon. In some cases, the...
2018/0301577 METHOD FOR MANUFACTURING A COMPOUND SEMICONDUCTOR SOLAR CELL
According to an aspect of the present invention, there is provided a method for manufacturing a compound semiconductor solar cell, comprising: forming a...
2018/0301576 COMPOUND SEMICONDUCTOR SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME
A method for manufacturing a compound solar cell includes forming a rear electrode including a first electrode layer directly contacting a rear surface of a...
2018/0301575 COMPOUND SEMICONDUCTOR SOLAR CELL AND METHOD FOR MANUFACTURING A FRONT ELECTRODE OF THE SOLAR CELL
The disclosure relates to a compound solar cell and manufacturing method therefor. According to one aspect of the subject matter described in this ...
2018/0301574 CONDUCTIVE PASTE COMPOSITION AND SEMICONDUCTOR DEVICES MADE THEREWITH
The present invention provides a thick-film paste composition comprising an electrically conductive metal and an oxide composition dispersed in an organic...
2018/0301573 SOLID STATE IMAGING APPARATUS, PRODUCTION METHOD THEREOF AND ELECTRONIC DEVICE
A solid state imaging apparatus includes an insulation structure formed of an insulation substance penetrating through at least a silicon layer at a light...
2018/0301572 MONOLITHICALLY INTEGRATED HIGH VOLTAGE PHOTOVOLTAICS WITH TEXTURED SURFACE FORMED DURING THE GROWTH OF WIDE...
A method of forming a photovoltaic device that includes epitaxially growing a first conductivity type semiconductor material of a type III-V semiconductor on a...
2018/0301571 MONOLITHICALLY INTEGRATED HIGH VOLTAGE PHOTOVOLTAICS WITH TEXTURED SURFACE FORMED DURING THE GROWTH OF WIDE...
A method of forming a photovoltaic device that includes epitaxially growing a first conductivity type semiconductor material of a type III-V semiconductor on a...
2018/0301570 PHOTODIODE
This photodiode includes: a core of a first waveguide that terminates in a tapered termination that extends above a core, made of germanium or of SiGe, of a...
2018/0301569 INTEGRATED GRAPHENE DETECTORS WITH WAVEGUIDES
The present disclosure relates to semiconductor structures and, more particularly, to graphene detectors integrated with optical waveguide structures and...
2018/0301568 RAPID MELT GROWTH PHOTODETECTOR
Photodetector including: a waveguide of a waveguide material extending over a substrate; an insulating layer formed over the waveguide and having an opening...
2018/0301567 NORMALLY-OFF JUNCTION FIELD-EFFECT TRANSISTORS AND APPLICATION TO COMPLEMENTARY CIRCUITS
A junction field-effect transistor (JFET) with a gate region that includes two separate sub-regions having material of different conductivity types and/or a...
2018/0301566 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
A semiconductor device includes a first thin film transistor (101) on a substrate (10), the first thin film transistor including: a sub-gate electrode (12); a...
2018/0301565 THIN-FILM TRANSISTOR (TFT), MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE
A thin-film transistor (TFT) and a manufacturing method thereof, an array substrate and a display device are provided. The TFT includes: a base substrate; a...
2018/0301564 SEMICONDUCTOR DEVICES
Disclosed is a semiconductor device. The semiconductor device includes a substrate, channel semiconductor patterns vertically stacked and spaced apart from...
2018/0301563 DEEP GATE-ALL-AROUND SEMICONDUCTOR DEVICE HAVING GERMANIUM OR GROUP III-V ACTIVE LAYER
Deep gate-all-around semiconductor devices having germanium or group III-V active layers are described. For example, a non-planar semiconductor device includes...
2018/0301562 FLASH MEMORY STRUCTURE, MEMORY ARRAY AND FABRICATION METHOD THEREOF
A flash memory structure, a memory array and a fabrication method thereof are disclosed. In the flash memory structure, an erase gate structure is formed...
2018/0301561 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
One of the upper surface and the lower surface of a semiconductor layer (7) of a thin-film transistor (101) in a semiconductor device (100) is in contact with...
2018/0301560 MULTI-GATE DEVICE
A multi-gate semiconductor device having a fin element, a gate structure over the fin element, an epitaxial source/drain feature adjacent the fin element; a...
2018/0301559 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
A semiconductor device is provided, which includes a substrate, a gate and a gate contact. The substrate has a well region, which has a source, a drain and a...
2018/0301558 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes a substrate; at least one source/drain feature at least partially disposed in the substrate; an isolation structure disposed on...
2018/0301557 STRESS INDUCTION IN 3D DEVICE CHANNEL USING ELASTIC RELAXATION OF HIGH STRESS MATERIAL
A method for inducing stress in a device channel includes forming a stress adjustment layer on a substrate, the stress adjustment layer including an as...
2018/0301556 VERTICAL TRANSISTORS WITH SIDEWALL GATE AIR GAPS AND METHODS THEREFOR
A method is provided that includes forming a first vertically-oriented transistor above a substrate, the first vertically-oriented transistor comprising a...
2018/0301555 VERTICAL TRANSISTOR PASS GATE DEVICE
A semiconductor device including a fin structure present on a supporting substrate to provide a vertically orientated channel region. A first source/drain...
2018/0301554 SEMICONDUCTOR DEVICE AND CHARGING SYSTEM USING THE SAME
The present disclosure provides a semiconductor device. The semiconductor device includes a transistor. The transistor includes a first source/drain (S/D)...
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