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Patent # Description
2018/0301553 Semiconductor Device Comprising a Trench Structure
A semiconductor device includes a trench structure extending into a semiconductor body from a first surface. The trench structure has a shield electrode, a...
2018/0301552 SEMICONDUCTOR DEVICE HAVING COMPRESSIVELY STRAINED CHANNEL REGION AND METHOD OF MAKING SAME
A semiconductor device and method making it utilize a three-dimensional channel region comprising a core of a first semiconductor material and an epitaxial...
2018/0301551 HETEROJUNCTION TFETS EMPLOYING AN OXIDE SEMICONDUCTOR
Heterojunction tunnel field effect transistors (hTFETs) incorporating one or more oxide semiconductor and a band offset between at least one of a channel...
2018/0301550 SEMICONDUCTOR DEVICE
A semiconductor device including: a semiconductor substrate; a drift region of first conductivity type that is formed in the semiconductor substrate; an...
2018/0301549 ELECTRIC POWER CONVERTER
An electric power converter (100) which is provided with a switching element (101) and a rectifying element (102) that is connected in series to the switching...
2018/0301548 SILICON CARBIDE TRANSISTOR
The lateral bipolar junction transistor has a silicon carbide layer, the silicon carbide layer comprises a base region with a first conductivity type, a...
2018/0301547 TUNNELING FIELD EFFECT TRANSISTOR (TFET) HAVING A SEMICONDUCTOR FIN STRUCTURE
A tunneling field effect transistor is formed from a fin of semiconductor material on a support substrate. The fin of semiconductor material includes a source...
2018/0301546 METHOD FOR MAKING THIN FILM TRANSISTOR
A method of making a thin film transistor, the method including: forming a gate insulating layer on a gate electrode; placing a semiconductor layer on the gate...
2018/0301545 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF
The present disclosure provides a thin film transistor (TFT) and its manufacturing method. The method includes the following steps: sequentially depositing a...
2018/0301544 FINFET HAVING IMPROVED GE CHANNEL INTERFACIAL LAYER
A semiconductor device includes a substrate structure. The Substrate structure includes a substrate, a plurality of fins each protruding from the substrate...
2018/0301543 METHOD FOR MAKING THIN FILM TRANSISTOR
A method of making a thin film transistor, the method including: providing an insulating layer on a semiconductor substrate, forming a semiconductor layer on...
2018/0301542 SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
A semiconductor structure and a method for fabricating the semiconductor structure are provided. The method includes forming a gate structure on a base...
2018/0301540 REPLACEMENT METAL GATE STACK WITH OXYGEN AND NITROGEN SCAVENGING LAYERS
A method is presented for tuning work functions of transistors. The method includes forming a high-k dielectric over a semiconductor substrate, and forming a...
2018/0301539 SEMICONDUCTOR DEVICES AND STRUCTURES AND METHODS OF FORMATION
A semiconductor device structure is disclosed. The semiconductor device structure includes a mesa extending above a substrate. The mesa has a channel region...
2018/0301538 SEMICONDUCTOR DEVICE
A semiconductor device includes first and second electrodes spaced apart along a first direction, a first semiconductor region of a first conductivity type...
2018/0301537 Semiconductor Device Having an Electrostatic Discharge Protection Structure
A semiconductor device includes a semiconductor body having a first surface and a second surface opposite to the first surface. A transistor structure is...
2018/0301536 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate of a first conductivity type, a first silicon carbide layer of the...
2018/0301535 Doped Diamond SemiConductor and Method of Manufacture
A doped diamond semiconductor and method of production using a laser is disclosed herein. As disclosed, a dopant and/or a diamond or sapphire seed material may...
2018/0301534 SILICON GERMANIUM FIN CHANNEL FORMATION
A fin field effect transistor includes a Si fin including a central portion between end portions of the fin, and a SiGe channel region disposed on the central...
2018/0301533 SOURCE FERMI FILTER FIELD EFFECT TRANSISTOR
Fermi filter field effect transistors having a Fermi filter between a source and a source contact, systems incorporating such transistors, and methods for...
2018/0301532 THIN FILM TRANNSISTOR
Disclosed is a thin film transistor, which includes a shading layer and a poly-silicon layer, the shading layer being arranged below the poly-silicon layer....
2018/0301531 NANOSHEET TRANSISTOR WITH UNIFORM EFFECTIVE GATE LENGTH
A method of forming nanosheet and nanowire transistors includes the formation of alternating epitaxial layers of silicon germanium (SiGe) and silicon (Si),...
2018/0301530 Materials and Methods for the Preparation of Nanocomposites
Disclosed herein is an isolable colloidal particle comprising a nanoparticle and an inorganic capping agent bound to the surface of the nanoparticle, a method...
2018/0301529 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
A semiconductor device includes a first semiconductor layer of a first conductivity type having a first surface crossing a first direction; a first...
2018/0301528 HIGH ELECTRON MOBILITY TRANSISTOR
A high electron mobility transistor includes a channel layer, a barrier layer, and a first anti-polarization layer. The barrier layer is disposed above the...
2018/0301527 SEMICONDUCTOR DEVICE
A semiconductor device includes: a first GaN based semiconductor layer; a second GaN based semiconductor layer disposed on the first layer and having a bandgap...
2018/0301526 Etching Process Control in Forming MIM Capacitor
A method includes forming a capacitor, which includes depositing a bottom electrode layer, depositing a capacitor insulator layer over the bottom electrode...
2018/0301525 DISPLAY DEVICE
A display device includes a first substrate arranged with a plurality of pixels on a first surface, the plurality of pixels having a display element including...
2018/0301524 DISPLAY PANEL AND DISPLAY DEVICE
A display panel includes a first substrate, a second substrate, an OLED device, a first connection structure and a second connection structure. The second...
2018/0301523 ORGANIC LIGHT EMITTING DISPLAY
Organic light-emitting display is disclosed. The organic light-emitting display includes a first substrate, a semiconductor layer positioned on the first...
2018/0301522 Organic Electroluminescent Display Panel, Manufacturing Method for Manufacturing the Same, and Display Device
An organic electroluminescent display panel and a method for manufacturing the same and a display device are disclosed. The organic electroluminescent display...
2018/0301521 OLED DISPLAY PANEL AND MANUFACTURING METHOD AND DISPLAY DEVICE THEREOF
The present disclosure provides an OLED display panel including a TFT array substrate and a plurality of anodes array arranged on the TFT array substrate, a...
2018/0301520 DISPLAY APPARATUS
A display apparatus includes a substrate, a display unit, a first wire unit, and a dummy unit. The substrate includes a first area, a second area, and a...
2018/0301519 DISPLAY DEVICE
A display device may include an insulation layer having openings, the insulation layer having opening edges around the respective openings; pixel electrodes in...
2018/0301518 DISPLAY PANEL AND DISPLAY DEVICE CONTAINING DISPLAY PANEL
A display panel and a display device, the display panel includes a display area and a peripheral area outside the display area; the display area is provided...
2018/0301517 DISPLAY DEVICE AND METHOD OF MANUFACTURING A DISPLAY DEVICE
A display device according to an embodiment of the present invention includes: a substrate; a plurality of pixels arranged on the substrate; an insulating...
2018/0301516 Organic Light Emitting Diode Substrate, Method of Fabricating the Same and Display Apparatus Having the Same
An organic light emitting diode substrate, a method of fabricating the same, and a display apparatus having the same are disclosed. The organic light emitting...
2018/0301515 DISPLAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY APPARATUS
The present application provides a display substrate, a manufacturing method thereof, and a display apparatus. The display substrate of the present invention...
2018/0301514 ORGANIC LIGHT-EMITTING DIODE DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF, AND ORGANIC LIGHT-EMITTING DIODE...
The present invention provides an OLED display device and a manufacturing method thereof, and an OLED display. The OLED display device comprises a substrate,...
2018/0301513 OLED DISPLAY DEVICE, MANUFACTURING METHOD THEREOF AND OLED DISPLAY
The present disclosure proposes an OLED display device, a manufacturing method thereof and an OLED Display. The OLED display device includes a substrate and a...
2018/0301512 DISPLAY PANEL AND FABRICATING METHOD THEREOF
Embodiments of the present disclosure disclose a display panel and a fabricating method thereof. In the solution, on one hand, water-absorbing magnetic...
2018/0301511 Organic Light-Emitting Diode and Manufacturing Method Thereof and Display Device
An organic light-emitting diode, a manufacturing method thereof and a display device are provided. The organic light-emitting diode includes: a base substrate,...
2018/0301510 SOLID STATE IMAGE SENSOR, PRODUCTION METHOD THEREOF AND ELECTRONIC DEVICE
A solid state image sensor includes a semiconductor substrate where photoelectric conversion regions for converting light into charges are arranged per pixel...
2018/0301509 IMAGE SENSORS
An image sensor includes a photoelectric conversion element and a charge storage node coupled to the photoelectric conversion element. The charge storage node...
2018/0301508 Logic Elements Comprising Carbon Nanotube Field Effect Transistor (CNTFET) Devices and Methods of Making Same
Inverter circuits and NAND circuits comprising nanotube based FETs and methods of making the same are described. Such circuits can be fabricating using field...
2018/0301507 SIDEWALL INSULATED RESISTIVE MEMORY DEVICES
To provide enhanced data storage devices and systems, various systems, architectures, apparatuses, and methods, are provided herein. In a first example, a...
2018/0301506 MEMORY DEVICE
According to one embodiment, a memory device includes a first interconnect group, a second interconnect group, and a memory cell. In the first interconnect...
2018/0301505 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device includes a first conductive wiring, at least one first dielectric layer, at least one second dielectric layer and a second conductive...
2018/0301504 LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE LIGHT EMITTING DEVICE
A light-emitting device includes: a substrate; a unit light-emitting area disposed on the substrate; first and second electrodes disposed in the unit...
2018/0301503 METHOD FOR MANUFACTURING IMAGE CAPTURING DEVICE AND IMAGE CAPTURING DEVICE
An offset spacer film (OSS) is formed on a side wall surface of a gate electrode (NLGE, PLGE) to cover a region in which a photo diode (PD) is disposed. Next,...
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