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Patent # Description
2018/0315897 LIGHT-EMITTING DEVICE
A light-emitting device includes a substrate comprising a base member, a first wiring, a second wiring, and a via hole; at least one light-emitting element...
2018/0315896 LIGHT-EMITTING DEVICE
A light-emitting device includes, a substrate, a plurality of light-emitting elements aligned along a longitudinal direction, and a covering member. The...
2018/0315895 LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING LIGHT EMITTING DEVICE
A light emitting device includes: a light emitting element; a light-transmissive member including a first lower surface an outer periphery of which being...
2018/0315894 SEMICONDUCTOR DEVICE PACKAGE AND A METHOD OF MANUFACTURING THE SAME
A semiconductor device package includes a carrier, a semiconductor device disposed on the carrier, and a lid disposed on the semiconductor device. The lid is...
2018/0315893 VEHICLE LAMP USING SEMICONDUCTOR LIGHT EMITTING DEVICE
Disclosed is a semiconductor light emitting device, wherein the semiconductor light emitting device includes: a first conductive electrode and a second...
2018/0315892 LIGHT EMITTING DEVICE IN WHICH LIGHT EMITTING ELEMENT AND LIGHT TRANSMISSIVE MEMBER ARE DIRECTLY BONDED
Provided is a light emitting device capable of reducing light attenuation within the element and having high light extraction efficiency, and a method of...
2018/0315891 OPTOELECTRONIC COMPONENT
The invention relates to an optoelectronic component (100) comprising a semiconductor layer sequence (1) having an active layer (10), wherein the active layer...
2018/0315890 SEMICONDUCTOR LAYERED BODY, LIGHT EMITTING DEVICE, AND METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE
A semiconductor layered body includes: a plurality of protrusions having first main surfaces along a reference plane and protruding from the reference plane;...
2018/0315889 LIGHT-EMITTING DEVICE
A light-emitting device includes: a rectangular shape with a first side, a second side opposite to the first side, and a third side connecting the first side...
2018/0315887 SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE PACKAGE, AND LIGHTING SYSTEM COMPRISING SAME
A semiconductor device according to an embodiment comprises: a substrate; a buffer layer provided on the substrate; a first conductivity type semiconductor...
2018/0315886 Heterostructure for an Optoelectronic Device
A heterostructure, such as a group III nitride heterostructure, for use in an optoelectronic device is described. The heterostructure can include a sacrificial...
2018/0315885 THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
A thin film transistor array substrate and a method for manufacturing the same are disclosed. The thin film transistor array substrate includes a plurality of...
2018/0315884 METHOD FOR RECYCLING PHOTOVOLTAIC SOLAR CELLS MODULE
A method for recycling/recovering a core of a silicon solar cells module in its raw components comprising: providing a core of a silicon solar cells module...
2018/0315883 A LIGHT-BASED SENSOR APPARATUS AND ASSOCIATED METHODS
An apparatus (201) comprises a light emitter (202) and a photodetector (203) formed on a single fluid-permeable substrate (206) such that the photodetector...
2018/0315882 Radiation Detector and a Method for Forming a Semiconductor Device
A method for forming a semiconductor device includes forming an amorphous semiconductor layer adjacent to a lightly doped region of a semiconductor wafer. The...
2018/0315881 Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom
Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material...
2018/0315880 HYBRID METAL-GRAPHENE TERAHERTZ OPTOELECTRONIC SYSTEM WITH TUNABLE PLASMONIC RESONANCE AND METHOD OF FABRICATION
A new approach to graphene-enabled plasmonic resonant structures in the THz is demonstrated in a hybrid graphene-metal design in which the graphene acts as a...
2018/0315879 TUNNEL JUNCTIONS FOR MULTIJUNCTION SOLAR CELLS
Tunnel junctions for multijunction solar cells are provided. According to an aspect of the invention, a tunnel junction includes a first layer including p-type...
2018/0315878 Photovoltaic Device Based on Ag2ZnSn(S,Se)4 Absorber
Photovoltaic devices based on an Ag.sub.2ZnSn(S,Se).sub.4 (AZTSSe) absorber and techniques for formation thereof are provided. In one aspect, a method for...
2018/0315877 Ultralight Photovoltaic Power Generation Tiles
Systems and methods in accordance with various embodiments of the invention provide a photovoltaic concentrator tile for a space-based solar power (SBSP)...
2018/0315876 HIGH PHOTOELECTRIC CONVERSION EFFICIENCY SOLAR CELL AND METHOD FOR MANUFACTURING HIGH PHOTOELECTRIC CONVERSION...
Provided is a solar cell including, on a first main surface of a semiconductor substrate having a first conductivity type, a base layer which has the first...
2018/0315875 POLYMER CONDUCTOR SHEETS, SOLAR CELLS AND METHODS FOR PRODUCING SAME
The present invention relates to polymer conductor sheets comprising zones featuring different degrees of polymerization and/or crosslinking within the same...
2018/0315874 AUTOMATED REEL PROCESSES FOR PRODUCING SOLAR MODULES AND SOLAR MODULE REELS
This specification describes automated reel processes for producing solar modules and solar module reels. In some examples, a method includes receiving a...
2018/0315873 INFRARED LIGHT-RECEIVING DEVICE
An infrared light-receiving device includes an optical absorption layer disposed on a principal surface of a substrate and an optical filter disposed on the...
2018/0315872 INFRARED DETECTING SEMICONDUCTOR DEVICE
An infrared detecting semiconductor device comprises: an optical absorbing layer of type-II disposed between first conductivity-type and second...
2018/0315871 VERTICALLY STACKED PHOTOVOLTAIC AND THERMAL SOLAR CELL
According to some embodiments, the present invention provides a novel photovoltaic solar cell system from photovoltaic modules that are vertically arrayed in a...
2018/0315870 OPTOELECTRONIC DEVICE
The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one...
2018/0315869 METHOD FOR PRODUCING HIGH-EFFICIENCY SOLAR CELL
A method for producing a solar cell having good photoelectric conversion characteristics with high productivity, including the steps of: forming a first...
2018/0315868 CONDUCTIVE PASTE FOR SOLAR CELL, SOLAR CELL AND MANUFACTURING METHOD THEREOF, AND SOLAR CELL MODULE
A conductive paste for a solar cell, a solar cell and a manufacturing method thereof, and a solar cell module are provided. The conductive paste for a solar...
2018/0315867 CONE-SHAPED HOLES FOR HIGH EFFICIENCY THIN FILM SOLAR CELLS
A photovoltaic device includes a substrate having a plurality of hole shapes formed therein. The plurality of hole shapes each have a hole opening extending...
2018/0315866 SOLAR CELL AND METHOD OF MANUFACTURING THE SAME
Disclosed is a solar cell including: a semiconductor substrate; a first conductive region formed at a first surface of the semiconductor substrate and having a...
2018/0315865 DEVICE AND METHOD FOR OPERATING CAMERAS AND LIGHT SOURCES
Provided herein is a device and method for improved operating of cameras and light sources of a mobile automation apparatus. Light sources are operated to...
2018/0315864 SEMICONDUCTOR VARIABLE CAPACITOR USING THRESHOLD IMPLANT REGION
Certain aspects of the present disclosure generally relate to a semiconductor variable capacitor, and techniques for fabricating the same, implemented using a...
2018/0315863 SEMICONDUCTOR DEVICE
First and second p-type anode layers (2,3) are provided side by side on a drift layer (1). N-type cathode layer (5) and p-type cathode layer (6) are provided...
2018/0315862 METHOD OF FORMING VERTICAL FLASH MEMORY
A vertical flash memory includes a plurality of vertical memory cells, wherein each of the vertical memory cells includes a selective gate, a main gate, a...
2018/0315861 SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING SAME AND ALIPHATIC POLYCARBONATE
It is an object of the invention to provide a thin film transistor and a method for producing the same, which will easily achieve self-aligned formation of a...
2018/0315860 VERTICAL THIN-FILM TRANSISTOR WITH MULTIPLE-JUNCTION CHANNEL
Aspects describe a vertical metal-oxide thin-film transistor with multiple-junction channel and a method to fabricate the same. In one example, the vertical...
2018/0315859 Recessed Transistors Containing Ferroelectric Material
Some embodiments include transistor constructions having a first insulative structure lining a recess within a base. A first conductive structure lines an...
2018/0315858 THIN-FILM TRANSISTOR, METHOD OF FABRICATING THIN-FILM TRANSISTOR, AND DISPLAY DEVICE
A method of fabricating a thin-film transistor is provided. In the method, an oxide semiconductor layer is formed above a substrate. A gate insulating layer is...
2018/0315857 DEVICE AND METHOD TO IMPROVE FIN TOP CORNER ROUNDING FOR FINFET
A method for manufacturing a semiconductor device includes providing a substrate structure including a substrate, a plurality of fins on the substrate, a...
2018/0315856 DEVICE AND METHOD FOR TUNING THRESHOLD VOLTAGE BY IMPLEMENTING DIFFERENT WORK FUNCTION METALS IN DIFFERENT...
A semiconductor device includes an active region spanning along a first direction. The semiconductor device includes a first elongated gate spanning along a...
2018/0315855 SOURCE/DRAIN RECESS IN A SEMICONDUCTOR DEVICE
A device including a gate stack over a semiconductor substrate having a pair of spacers abutting sidewalls of the gate stack. A recess is formed in the...
2018/0315854 Structure and Method for FinFET Device with Asymmetric Contact
The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a fin-type active region extruded from a...
2018/0315853 SEMICONDUCTOR DEVICE WITH CONTRACTED ISOLATION FEATURE AND FORMATION METHOD THEREOF
A method of forming a semiconductor device includes forming a first dummy gate structure over a substrate, forming gate spacers over the substrate, cutting the...
2018/0315852 STRAIN GATED TRANSISTORS AND METHOD
A strain gated transistor and associated methods are shown. In one example, a transistor channel region includes a metal dichalcogen layer that is stressed to...
2018/0315851 HIGH VOLTAGE DEPLETION MODE MOS DEVICE WITH ADJUSTABLE THRESHOLD VOLTAGE AND MANUFACTURING METHOD THEREOF
A high voltage depletion mode MOS device with adjustable threshold voltage includes: a first conductive type well region; a second conductive type channel...
2018/0315850 VERTICAL TUNNELING FINFET
A tunneling transistor is implemented in silicon, using a FinFET device architecture. The tunneling FinFET has a non-planar, vertical, structure that extends...
2018/0315849 Integrated High Side Gate Driver Structure and Circuit for Driving High Side Power Transistors
An integrated high side gate driver structure for driving a power transistor. The structure includes a semiconductor substrate having a first polarity...
2018/0315848 STRUCTURE OF TRENCH METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
A structure of a trench metal-oxide-semiconductor field-effect transistor includes an N-current spread layer (N-CSL) disposed on the N-drift region a split...
2018/0315847 POWER MOSFET AND METHOD FOR PRODUCING A POWER MOSFET
A power MOSFET having a substrate that has a substrate surface into which a trench structure is introduced, wherein first trenches and second trenches form the...
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