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Patent # Description
2018/0374975 COMPOSITIONS FOR UV SEQUESTRATION AND METHODS OF USE
Embodiments are directed to compositions comprising photoluminescent elements (e.g., quantum dots) that absorb UV radiation and emit longer wavelength...
2018/0374974 ENCAPSULANT MATERIAL FOR PHOTOVOLTAIC MODULES AND METHOD OF PREPARING THE SAME
An encapsulant material for a photovoltaic module. The encapsulant material includes: between 30 and 50 parts by weight of fiber cloth and between 50 and 70...
2018/0374973 SOLAR CELL STACK
Solar cell stack comprising III-V semiconductor layers, which includes a first subcell having a first band gap and a first lattice constant and which includes...
2018/0374972 CHARGE EXTRACTION DEVICES, SYSTEMS, AND METHODS
A composite film structure having a first absorbing layer comprising a first material, a second absorbing layer comprising a second material, and a first...
2018/0374971 SOLUTION PROCESS FOR SILVER-CONTAINING CHALCOGENIDE LAYER DEPOSITION
A method of preparing a Ag.sub.2ZnSn(S,Se).sub.4 compound, including dissolving selenourea (SeC(NH.sub.2).sub.2) in an aprotic solvent, and dissolving a silver...
2018/0374970 LIGHT RECEIVING/EMITTING ELEMENT, SOLAR CELL, OPTICAL SENSOR, LIGHT EMITTING DIODE, AND SURFACE EMITTING LASER...
A light receiving/emitting element 11 includes: a light receiving/emitting layer 21 in which a plurality of compound semiconductor layers are stacked; and an...
2018/0374969 Silicon-Germanium Photoelectric Detection Apparatus Based on On-Chip Mode Converter
An on-chip mode converter-based silicon-germanium photoelectric detection apparatus comprises an insulating substrate, an optical coupler, an on-chip mode...
2018/0374968 PLASMON-ENHANCED BELOW BANDGAP PHOTOCONDUCTIVE TERAHERTZ GENERATION AND DETECTION
Disclosed are systems and methods for improving applications involving the generation and detection of electromagnetic radiation at terahertz (THz)...
2018/0374967 MODE CONVERTER AND QUADRANT PHOTODIODE FOR SENSING OPTICAL CAVITY MODE MISMATCH
A new technique for sensing optical cavity mode mismatch using a mode converter formed from a cylindrical lens mode converting telescope, radio frequency...
2018/0374966 Integrated Photovoltaic Panel Circuitry
A photovoltaic module is presented, which may include a photovoltaic panel and a converter circuit having a primary input connected to the photovoltaic panel...
2018/0374965 Novel DC Power Conversion Circuit
The inventive technology, in certain embodiments, may be generally described as a solar power generation system with a converter, which may potentially include...
2018/0374964 SEMICONDUCTOR DEVICE, MOS CAPACITOR, AND MANUFACTURING METHODS THEREFOR
This application relates to the technical field of semiconductors, and discloses a semiconductor device, an MOS capacitor, and manufacturing methods therefor....
2018/0374963 TRANSCAP DEVICE ARCHITECTURE WITH REDUCED CONTROL VOLTAGE AND IMPROVED QUALITY FACTOR
Certain aspects of the present disclosure provide a semiconductor capacitor. The semiconductor capacitor generally includes an insulative layer, and a...
2018/0374962 TWO-DIMENSIONAL ELECTROSTRICTIVE FIELD EFFECT TRANSISTOR (2D-EFET)
A device and method for manufacturing a two-dimensional electrostrictive field effect transistor having a substrate, a source, a drain, and a channel disposed...
2018/0374961 VERTICAL MEMORY DEVICE
A vertical memory device and a method of manufacturing such device are provided. The vertical memory device may include a plurality of gate electrode layers...
2018/0374960 TFT SUBSTRATE AND METHOD FOR MAKING SAME
A high-performance TFT substrate (100) for a flat panel display includes a substrate (110), a first conductive layer (130) on the substrate (110), a...
2018/0374959 OXIDE SEMICONDUCTOR COMPOUND, SEMICONDUCTOR ELEMENT PROVIDED WITH LAYER OF OXIDE SEMICONDUCTOR COMPOUND, AND...
An oxide semiconductor compound includes gallium; and oxygen. An optical band gap is 3.4 eV or more. An electron Hall mobility obtained by performing a Hall...
2018/0374958 Semiconductor Device Including Wrap Around Contact and Method of Forming the Semiconductor Device
A semiconductor device includes a plurality of semiconductor layers formed on a plurality of fin structures, an epitaxial layer formed on the plurality of fin...
2018/0374957 SEMICONDUCTOR DEVICE, DISPLAY DEVICE INCLUDING SEMICONDUCTOR DEVICE, DISPLAY MODULE INCLUDING DISPLAY DEVICE,...
A semiconductor device including a transistor and a wiring electrically connected to the transistor each of which has excellent electrical characteristics...
2018/0374956 THIN-FILM TRANSISTOR INCLUDING OXIDE SEMICONDUCTOR LAYER, METHOD OF MANUFACTURING THE SAME, AND DISPLAY...
A thin-film transistor is disclosed. The thin-film transistor includes a gate electrode disposed on a substrate, an oxide semiconductor layer disposed so as to...
2018/0374955 SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SAME
A semiconductor device includes a circuit including a first TFT (101) which is an oxide semiconductor TFT, an inorganic insulating layer (11) covering the...
2018/0374954 THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THE SAME, DISPLAY SUBSTRATE, DISPLAY APPARATUS
The present disclosure provides a thin film transistor, a method for fabricating the same, a display substrate, and a display apparatus, and belongs to the...
2018/0374953 METAL OXIDE THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME, AND DISPLAY PANEL
A metal oxide thin film transistor includes: a substrate; a metal oxide semiconductor layer disposed on the substrate, and including a semiconductor body...
2018/0374952 HEMT GaN DEVICE WITH A NON-UNIFORM LATERAL TWO DIMENSIONAL ELECTRON GAS PROFILE AND METHOD OF MANUFACTURING THE...
A high electron mobility field effect transistor (HEMT) having a substrate, a channel layer on the substrate and a barrier layer on the channel layer includes...
2018/0374951 CRYSTALLIZED SILICON CARBON REPLACEMENT MATERIAL FOR NMOS SOURCE/DRAIN REGIONS
Tensile strain is applied to a channel region of a transistor by depositing an amorphous Si.sub.xGe.sub.1-x-yC.sub.y alloy in at least one of a source and a...
2018/0374950 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device includes a first electrode in a semiconductor layer, an insulating film on the semiconductor layer, covering the first electrode, a...
2018/0374949 METHOD FOR FABRICATING LDMOS WITH SELF-ALIGNED BODY
A method for fabricating a LDMOS device, including: forming a semiconductor substrate; forming a dielectric layer atop the semiconductor substrate and an...
2018/0374948 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device having a contact trench is provided. The semiconductor device including: a semiconductor substrate; a drift region of the first...
2018/0374947 DIODE, SEMICONDUCTOR DEVICE, AND MOSFET
Disclosed is a technique capable of reducing loss at the time of switching in a diode. A diode disclosed in the present specification includes a cathode...
2018/0374946 METHODS OF FORMING A BULK FIELD EFFECT TRANSISTOR (FET) WITH SUB-SOURCE/DRAIN ISOLATION LAYERS AND THE...
Disclosed are structures (e.g., a fin-type field effect transistor (FINFET) and a nanowire-type FET (NWFET)) and methods of forming the structures. In the...
2018/0374945 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
The present disclosure provides a semiconductor device and a method for manufacturing the same. The semiconductor device comprises a substrate, a first III-V...
2018/0374944 HIGH ELECTRON MOBILITY TRANSISTORS AND METHODS FOR FABRICATING THE SAME
A high electron mobility transistor (HEMT) and method of producing the same are provided. The HEMT includes a barrier layer formed on a GaN layer. The HEMT...
2018/0374943 SEMICONDUCTOR DEVICES HAVING A PLURALITY OF UNIT CELL TRANSISTORS THAT HAVE SMOOTHED TURN-ON BEHAVIOR AND...
A semiconductor device includes a plurality of unit cell transistors on a common semiconductor structure, the unit cell transistors electrically connected in...
2018/0374942 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
According to one embodiment, a semiconductor device includes first to third electrodes, and first to third semiconductor regions. The third electrode is...
2018/0374941 Method of Controlling Wafer Bow in a Type III-V Semiconductor Device
A type IV semiconductor substrate having a main surface is provided. A type III-V semiconductor channel region that includes a two-dimensional carrier gas is...
2018/0374940 SEMICONDUCTOR DEVICE HAVING GROUP III-V MATERIAL ACTIVE REGION AND GRADED GATE DIELECTRIC
Semiconductor devices having group III-V material active regions and graded gate dielectrics and methods of fabricating such devices are described. In an...
2018/0374939 POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING POWER SEMICONDUCTOR DEVICE
A power semiconductor device according to the present invention has a super junction structure, and includes a low-resistance semiconductor layer, an n--type...
2018/0374938 SEMICONDUCTOR CIRCUIT USING POSITIVE FEEDBACK FIELD EFFECT TRANSISTOR FOR EMULATING NEURON FIRING PROCESS
Semiconductor circuits are provided for emulating neuron firing process using a positive feedback transistor having first and second gate electrodes in the...
2018/0374937 FIELD EFFECT TRANSISTORS HAVING A FIN
Transistors might include first and second semiconductor fins, a first source/drain region in the first semiconductor fin and extending downward from an...
2018/0374936 METHOD FOR FORMING SEMICONDUCTOR STRUCTURE WITH CONTACT OVER SOURCE/DRAIN STRUCTURE
Methods for manufacturing semiconductor structures are provided. The method for manufacturing a semiconductor structure includes forming a source/drain...
2018/0374935 SELF-ALIGNED FINFET FORMATION
A method for fabricating a semiconductor device comprises forming a first hardmask, a planarizing layer, and a second hardmask on a substrate. Removing...
2018/0374934 METHOD FOR MAKING THIN FILM TRANSISTOR
A method of making thin film transistor including: forming a gate electrode, forming a gate insulating layer on the gate electrode; locating a semiconductor...
2018/0374933 FABRICATION OF A VERTICAL FIN FIELD EFFECT TRANSISTOR (VERTICAL FINFET) WITH A SELF-ALIGNED GATE AND FIN EDGES
A method of forming a vertical fin field effect transistor with a self-aligned gate structure, comprising forming a plurality of vertical fins on a substrate,...
2018/0374932 GATE TIE-DOWN ENABLEMENT WITH INNER SPACER
A gate tie-down structure includes a gate structure including a gate conductor and gate spacers and inner spacers formed on the gate spacers. Trench contacts...
2018/0374931 SEMICONDUCTOR COMPONENT HAVING AN ESD PROTECTION DEVICE
A semiconductor component and a method for manufacturing the semiconductor component, wherein the semiconductor component includes a transient voltage...
2018/0374930 NANOSHEET CHANNEL-TO-SOURCE AND DRAIN ISOLATION
A method and structures are used to fabricate a nanosheet semiconductor device. Nanosheet fins including nanosheet stacks including alternating silicon (Si)...
2018/0374929 FERROELECTRIC MEMORY DEVICES
A ferroelectric memory device includes a substrate having a source electrode and a drain electrode therein, a first interfacial dielectric layer including an...
2018/0374928 DIELECTRIC METAL OXIDE CAP FOR CHANNEL CONTAINING GERMANIUM
Embodiments of the present disclosure describe semiconductor devices comprised of a semiconductor substrate with a metal oxide semiconductor field effect...
2018/0374927 TRANSISTOR WITH DUAL-GATE SPACER
Techniques are disclosed for forming a transistor with one or more additional gate spacers. The additional spacers may be formed between the gate and original...
2018/0374926 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device comprises a first transistor on a substrate, and a second...
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