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Patent # Description
2019/0006516 MEMORY DEVICE COMPRISING AN ELECTRICALLY FLOATING BODY TRANSISTOR AND METHODS OF OPERATING
A semiconductor memory cell comprising an electrically floating body having two stable states is disclosed. A method of operating the memory cell is disclosed.
2019/0006515 FIELD EFFECT TRANSISTOR DEVICES HAVING GATE CONTACTS FORMED IN ACTIVE REGION OVERLAPPING SOURCE/DRAIN CONTACTS
Semiconductor devices and methods are provided to fabricate FET devices having overlapping gate and source/drain contacts while preventing electrical shorts...
2019/0006514 Laterally Diffused Metal Oxide Semiconductor with Gate Poly Contact within Source Window
An integrated circuit includes a power transistor having at least one transistor finger that lies within a semiconductor material substrate. Each transistor...
2019/0006513 Semiconductor Device Having a Reduced Surface Doping in an Edge Termination Area, and Method for Manufacturing...
A semiconductor device includes a semiconductor substrate having drift and body regions. The drift region includes upper and lower drift regions. An active...
2019/0006512 SHIELD INDENT TRENCH TERMINATION FOR SHIELDED GATE MOSFETS
In a general aspect, a power semiconductor device can include a semiconductor region having an active region and a termination region. The device can also...
2019/0006511 PROGRAMMABLE NON-VOLATILE MEMORY WITH LOW OFF CURRENT
In one disclosed embodiment, a non-volatile memory cell is constructed using a floating gate transistor with a channel that includes a buried channel region...
2019/0006510 SILICON GERMANIUM FIN IMMUNE TO EPITAXY DEFECT
A method for forming a semiconductor structure includes forming at least one fin on a semiconductor substrate. The least one fin includes a semiconducting...
2019/0006509 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
The present disclosure relates to the technical field of semiconductors, and discloses a semiconductor device and a manufacturing method therefor. The...
2019/0006508 PRE-SCULPTING OF SI FIN ELEMENTS PRIOR TO CLADDING FOR TRANSISTOR CHANNEL APPLICATIONS
Transistor fin elements (e.g., fin or tri gate) may be modified by radio frequency (RF) plasma and/or thermal processing for purpose of dimensional sculpting....
2019/0006507 SEMICONDUCTOR DEVICE AND METHOD
A method includes providing a substrate having a gate structure over a first side of the substrate, forming a recess adjacent to the gate structure, and...
2019/0006506 UTILIZING MULTILAYER GATE SPACER TO REDUCE EROSION OF SEMICONDUCTOR FIN DURING SPACER PATTERNING
FinFET devices comprising multilayer gate spacers are provided, as well as methods for fabricating FinFET devices in which multilayer gate spacers are utilized...
2019/0006505 METAL OXIDE SEMICONDUCTOR (MOS) CONTROLLED DEVICES AND METHODS OF MAKING THE SAME
Metal-Oxide-Semiconductor (MOS) controlled semiconductor devices and methods of making the devices are provided. The devices include a gate which controls...
2019/0006504 Heterojunction Semiconductor Device for Reducing Parasitic Capacitance
A semiconductor device including an active layer made of III-V group semiconductors, a source electrode and a drain electrode disposed on the active layer, a...
2019/0006503 COMPOUND SEMICONDUCTOR DEVICE AND FABRICATION METHOD
Disclosed is a compound semiconductor device that includes an electron transit layer; an electron supply layer disposed above the electron transit layer, and...
2019/0006502 Transistor Structure Including a Scandium Gallium Nitride Back-barrier Layer
A transistor structure including a scandium gallium nitride back-barrier layer. For instance, the transistor structure may include a buffer layer disposed on a...
2019/0006501 SEMICONDUCTOR DEVICE
A semiconductor device, including: a channel layer formed on a substrate; a top barrier layer formed on the channel layer, wherein a first heterojunction is...
2019/0006500 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Characteristics of a semiconductor device are improved. A semiconductor device includes a sequential stack of a buffer layer, a channel layer, and a barrier...
2019/0006499 BIDIRECTIONAL SWITCH
A bidirectional switch includes a semiconductor element and a substrate potential stabilizer which stabilizes a substrate potential of a semiconductor element....
2019/0006498 HIGH-ELECTRON-MOBILITY TRANSISTOR AND MANUFACTURING METHOD THEREOF
Some embodiments of the present disclosure provide a semiconductor device. The semiconductor device includes a semiconductive substrate. A donor-supply layer...
2019/0006497 SEMICONDUCTOR DEVICE INCLUDING EMITTER REGIONS AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
A semiconductor device according to the present invention includes a first conductive-type semiconductor layer, a second conductive-type base region that is...
2019/0006496 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
In one embodiment, a semiconductor device includes a semiconductor substrate having an upper surface, a trench electrode placed inside a trench formed on the...
2019/0006495 INSULATED GATE BIPOLAR TRANSISTOR
According to one embodiment, an IGBT has a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type,...
2019/0006493 Semiconductor Device and Method
A manufacturing process and device are provided in which a first opening in formed within a substrate. The first opening is reshaped into a second opening...
2019/0006492 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
In a method for manufacturing a semiconductor device, fin structures each having an upper portion and a lower portion, are formed. The lower portion is...
2019/0006491 METHOD OF FORMING SHAPED SOURCE/DRAIN EPITAXIAL LAYERS OF A SEMICONDUCTOR DEVICE
In a method for manufacturing a semiconductor device, an isolation insulating layer is formed over a fin structure. A first portion of the fin structure is...
2019/0006490 THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THE SAME, DISPLAY DEVICE, EXPOSURE DEVICE
A thin film transistor, a method for fabricating the same, a display device, and an exposure device are disclosed. The method comprises: patterning a source...
2019/0006489 MANUFACTURING METHOD OF A TRENCH POWER SEMICONDUCTOR DEVICE
A manufacturing method of a trench power semiconductor device is provided. The manufacturing method includes the steps of forming a protective layer on an...
2019/0006488 GATE STRUCTURE AND METHODS THEREOF
A method and structure providing a high-voltage transistor (HVT) including a gate dielectric, where at least part of the gate dielectric is provided within a...
2019/0006487 Gate Stack Structure and Method for Forming the Same
Embodiments of the present disclosure provide a method of cleaning a lanthanum containing substrate without formation of undesired lanthanum compounds during...
2019/0006486 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device has a substrate, a first dielectric fin, and an isolation structure. The substrate has a first semiconductor fin. The first dielectric...
2019/0006485 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
A method for fabricating a semiconductor device includes forming a stacked structure including at least one sacrificial layer and at least one semiconductor...
2019/0006484 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
A semiconductor device includes a substrate, a gate structure, a spacer, a mask layer, and at least one void. The gate structure is disposed on the substrate,...
2019/0006483 Gate Structure, Semiconductor Device and the Method of Forming Semiconductor Device
A gate structure, a semiconductor device, and the method of forming a semiconductor device are provided. In various embodiments, the gate structure includes a...
2019/0006482 THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, ARRAY SUBSTRATE AND DISPLAY DEVICE
A thin film transistor, a method for manufacturing the same, an array substrate and a display device are disclosed. The thin film transistor includes a gate...
2019/0006481 Method of Manufacturing Semiconductor Device and Non-Transitory Computer-readable Recording Medium
Described herein is a technique capable of improving electrical characteristics of a polysilicon film while suppressing damage to an underlying silicon oxide...
2019/0006480 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes a composite gate structure formed over a semiconductor substrate. The composite gate structure includes a gate dielectric...
2019/0006479 TRENCH POWER SEMICONDUCTOR AND METHOD OF MAKING THE SAME
The present disclosure provides a trench power semiconductor component and a method of making the same. The trench power semiconductor component includes a...
2019/0006478 SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
A semiconductor structure and a method for fabricating the semiconductor structure are provided. The method includes forming a gate structure and a dielectric...
2019/0006477 THIN FILM TRANSISTOR, GOA CIRCUIT, DISPLAY SUBSTRATE AND DISPLAY DEVICE
A thin film transistor is disclosed, comprising a first, second and third electrode. The first and second electrodes are arranged in a same layer and insulated...
2019/0006476 SEMICONDUCTOR DEVICE HAVING INTERFACIAL LAYER AND HIGH K DIELECTRIC LAYER
A semiconductor device has a semiconductor substrate. A silicon germanium layer is disposed on the semiconductor substrate. The silicon germanium layer has a...
2019/0006475 Vertical Transistor Device Structure with Cylindrically-Shaped Field Plates
A vertical power transistor device includes a semiconductor layer of a first conductivity type, with a plurality of dielectric regions disposed in the...
2019/0006474 MULTI-LAYER DIFFUSION BARRIER AND METHOD OF MAKING THE SAME
A semiconductor device includes a metal layer, an insulating layer disposed above the metal layer, and a multi-layer diffusion barrier disposed on the metal...
2019/0006473 SEMICONDUCTOR DEVICE AND ELECTRIC APPARATUS USING SAME
A semiconductor device 1 which comprises a pair of an ohmic electrode 20 and a Schottky electrode 10 separated from each other, and a semiconductor layer 30 in...
2019/0006472 LAYERED STRUCTURE, SEMICONDUCTOR DEVICE INCLUDING LAYERED STRUCTURE, AND SEMICONDUCTOR SYSTEM INCLUDING...
In a first aspect of a present inventive subject matter, a layered structure includes a first semiconductor layer including an .epsilon.-phase crystalline...
2019/0006471 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
A silicon carbide semiconductor device includes: an n-type drift layer 2 provided within an SiC layer 30; a plurality of p-type well regions 3; a JFET region...
2019/0006470 METHOD FOR REDUCING SCHOTTKY BARRIER HEIGHT AND SEMICONDUCTOR DEVICE WITH REDUCED SCHOTTKY BARRIER HEIGHT
A method for controlling Schottky barrier height in a semiconductor device includes forming an alloy layer including at least a first element and a second...
2019/0006469 SEMICONDUCTOR DEVICE HAVING A FIN STRUCTURE AND A MANUFACTURING METHOD THEREOF
Provided is a semiconductor device including: a fin structure on a substrate including a negative channel field-effect transistor (nFET) region and a positive...
2019/0006468 APPROACH TO PREVENTING ATOMIC DIFFUSION AND PRESERVING ELECTRICAL CONDUCTION USING TWO DIMENSIONAL CRYSTALS AND...
A method of restricting diffusion of miscible materials across a barrier, including, forming a 2-dimensional material on a substrate surface, wherein the...
2019/0006467 REVERSE CONDUCTING IGBT INCORPORATING EPITAXIAL LAYER FIELD STOP ZONE AND FABRICATION METHOD
An RC-IGBT includes a semiconductor body formed having a base region incorporating a field stop zone where the base region and the field stop zone are both...
2019/0006466 MOSFET WITH ULTRA LOW DRAIN LEAKAGE
A semiconductor device includes a monocrystalline substrate configured to form a channel region between two recesses in the substrate. A gate conductor is...
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