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Patent # Description
2019/0019886 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes a codoped layer, a channel layer, a barrier layer, and a gate electrode disposed in a trench extending through the barrier...
2019/0019885 SEMICONDUCTOR DEVICE
A semiconductor device is provided that includes: an edge termination portion provided in the peripheral portion of a semiconductor substrate; and an active...
2019/0019883 FIN FORMATION IN FIN FIELD EFFECT TRANSISTORS
A method of forming a semiconductor device that includes forming a silicon including fin structure and forming a germanium including layer on the silicon...
2019/0019882 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device including a Fin FET device includes a fin structure protruding from a substrate layer and having a length extending in a first...
2019/0019881 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes a gate structure located on a substrate; and a raised source/drain region adjacent to the gate structure. An interface is...
2019/0019880 TRIPLE GATE TECHNOLOGY FOR 14 NANOMETER AND ONWARDS
A method of forming a 14 nm triple gate by adding a MG in the dual gate process and the resulting device are provided. Embodiments include forming an EG...
2019/0019879 POWER DEVICE WITH A FIELD STOP LAYER
In one general aspect, a power device can include a first Field Stop (FS) layer of a first conductivity type formed from a first-conductive-type semiconductor...
2019/0019878 OPTOELECTRONIC SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
An optoelectronic semiconductor includes a carrier, a semiconductor main body having a first semiconductor layer, a second semiconductor layer, and a radiation...
2019/0019877 FIN AND SHALLOW TRENCH ISOLATION REPLACEMENT TO PREVENT GATE COLLAPSE
A semiconductor structure and a method for fabricating the same. The structure includes a substrate, active fin structures, and non-active fin structures. The...
2019/0019876 HIGH VOLTAGE TRANSISTOR USING BURIED INSULATING LAYER AS GATE DIELECTRIC
A high voltage transistor may be formed on the basis of well-established CMOS techniques by using a buried insulating material of an SOI architecture as gate...
2019/0019875 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming an interlayer dielectric (ILD) layer...
2019/0019874 Low Thickness Dependent Work-Function nMOS Integration For Metal Gate
Film stacks and methods of forming film stacks including a high-k dielectric layer on a substrate, a high-k capping layer on the high-k dielectric layer, an...
2019/0019873 GATE SWITCHING DEVICE AND METHOD MANUFACTURING THE SAME
A method of manufacturing a gate switching device is provided. The method includes: forming an oxide insulating layer on a gallium nitride semiconductor layer...
2019/0019872 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A method for manufacturing a semiconductor device includes forming a conductive pattern on a substrate, forming a filling insulation layer covering the...
2019/0019871 SEMICONDUCTOR DIE HAVING STACKING STRUCTURE OF SILICON-METALLIC CONDUCTIVE LAYER-SILICON
The description relates to a semiconductor die having a stacking structure of silicon-metallic conductive layer-silicon, and the semiconductor die according to...
2019/0019870 THIN FILM TRANSISTOR ARRAY PANEL AND CONDUCTING STRUCTURE
A thin film transistor array panel includes a first conductive layer (102) including a gate electrode; a channel layer (104) disposed over the gate; and a...
2019/0019869 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A method for manufacturing a semiconductor device includes the following steps. An epitaxial layer is formed on a substrate. Then, a body is formed in an upper...
2019/0019868 SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
A silicon carbide epitaxial substrate includes a silicon carbide single crystal substrate and a silicon carbide layer. The silicon carbide single crystal...
2019/0019867 SEMICONDUCTOR SWITCH DEVICE AND METHOD
A semiconductor switch device and a method of making the same. The device includes a semiconductor substrate having a major surface. The device also includes a...
2019/0019866 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device, includes a first conductive type first doping area, a second conductive type second doping area, a source region, a drain region, a...
2019/0019865 TUNNEL FIELD-EFFECT TRANSISTOR AND FABRICATION METHOD THEREOF
Tunnel field-effect transistors and fabrication methods are provided. An exemplary fabrication method includes providing a semiconductor substrate; forming a...
2019/0019864 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
A semiconductor device includes a plurality of active fins defined by an isolation layer on a substrate, a gate structure on the active fins and the isolation...
2019/0019863 MULTILAYER DEVICE
A multilayer device includes a substrate having a trench extending along a first surface of the substrate. A first layer disposed on the first surface of the...
2019/0019862 COALESCED FIN TO REDUCE FIN BENDING
Methods for preventing fin bending in FinFET devices and related devices are provided. Embodiments include forming fins in a substrate; forming a non-conformal...
2019/0019861 SEMICONDUCTOR DEVICE
A semiconductor device including: a drift region formed on a semiconductor substrate; a gate trench portion provided on an upper surface of the semiconductor...
2019/0019860 DEEP TRENCH CAPACITOR WITH SCALLOP PROFILE
The present disclosure relates to a method of forming a deep trench capacitor. In some embodiments, the method may be performed by selectively etching a...
2019/0019859 SEMICONDUCTOR DEVICE RESISTOR INCLUDING VIAS AND MULTIPLE METAL LAYERS
In one general aspect, an apparatus can include a first terminal, a second terminal, and a resistive element extending between the first terminal and the...
2019/0019858 DEVICE AND METHOD FOR A THIN FILM RESISTOR USING A VIA RETARDATION LAYER
A device and method for fabricating an integrated circuit (IC) chip is disclosed. The method includes depositing a first thin film resistor material on a first...
2019/0019857 ORGANIC EL DISPLAY DEVICE
An organic EL display device includes: a lower electrode; an upper electrode; a first organic layer which is disposed between the lower electrode and the upper...
2019/0019856 DISPLAY DEVICE
A display device having a display region and a peripheral region in contact with the display region above a substrate is provided. The display region has a...
2019/0019855 DISPLAY DEVICE
A display device includes a first panel including a pad side area at one side of the first panel, a first optically transparent adhesive member on one surface...
2019/0019854 OLED DISPLAY PANEL AND OLED DISPLAY APPARATUS
An OLED display panel and an OLED display apparatus are provided. The OLED display panel includes an array substrate and a cathode plate disposed corresponding...
2019/0019853 DISPLAY DEVICE
A display device is disclosed, which includes: a substrate; a light emitting diode disposed above the substrate; a first transistor disposed above the...
2019/0019852 Organic Light-Emitting Display Device
An organic light-emitting display device protects a first electrode and reduces any effect due to light leakage from the top or the peripheral side of a bank,...
2019/0019851 LIGHT EMITTING DEVICE MANUFACTURING METHOD AND APPARATUS THEREOF
A method of manufacturing a light emitting device includes providing a substrate, forming a plurality of photosensitive bumps over the substrate, forming a...
2019/0019850 FINGERPRINT RECOGNITION DEVICE AND OLED DISPLAY DEVICE
A fingerprint recognition device and an OLED display device, which relate to the technical field of display and can solve the problems of a low recognition...
2019/0019849 PROFILED DISPLAY PANEL AND DISPLAY DEVICE
A profiled display panel and a display device are provided. A display region of the profiled display panel has a profiled border. The profiled display panel...
2019/0019848 OLED DISPLAY PANEL AND DISPLAY DEVICE
An OLED display panel and a display device are provided. The OLED display panel has at least two pixel group units, and each of the pixel group units has two...
2019/0019847 ORGANIC LIGHT-EMITTING DEVICE
An electronic apparatus comprising: a substrate; an organic light-emitting device disposed on the substrate; and a thin film encapsulation portion sealing...
2019/0019846 FLEXIBLE DISPLAY DEVICE
A display device according to an exemplary embodiment includes a base portion, a first support plate slidably coupled to the base portion, and configured to...
2019/0019845 FOLDABLE, FLEXIBLE DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME
A foldable, flexible display apparatus includes a flexible display panel which displays an image and includes a display side on which the image is displayed...
2019/0019844 ACTIVE ILLUMINATING DISPLAY PANELS AND MANUFACTURING METHODS THEREOF
The present disclosure relates to an active illuminating display panel and a manufacturing method thereof. The light-emitting layer is configured to emit the...
2019/0019843 SOLID-JUNCTION PHOTOELECTRIC CONVERSION ELEMENT MODULE AND METHOD FOR MANUFACTURING SAME
The present invention provides a solid junction photoelectric conversion element module including a first photoelectric conversion element, a second...
2019/0019842 THREE DIMENSIONAL MEMORY ARRAY WITH SELECT DEVICE
Three dimensional memory arrays and methods of forming the same are provided. An example three dimensional memory array can include a stack comprising a...
2019/0019841 SEMICONDUCTOR DEVICE HAVING RARE EARTH OXIDE LAYER AND METHOD OF MANUFACTURING THE SAME
A semiconductor device includes a first rare earth oxide layer, a first magnetic layer adjacent to the first rare earth oxide layer, a second rare earth oxide...
2019/0019840 COLLIMATED, DIRECTIONAL MICRO-LED LIGHT FIELD DISPLAY
Embodiments described herein provide for light field displays and methods of forming light field displays where micro-LED arrays are each configured to provide...
2019/0019839 LIGHT EMITTING DIODE DEVICE, ARRAY SUBSTRATE AND DISPLAY DEVICE
A light emitting diode device, an array substrate and a display device. The light emitting diode device includes a substrate, a first sub-light emitting unit...
2019/0019838 SCALABLE THERMOELECTRIC-BASED INFRARED DETECTOR
Device and method of forming the devices are disclosed. The method includes providing a substrate prepared with transistor and sensor regions. The substrate is...
2019/0019837 APPARATUS AND METHODS FOR OPTICAL EMISSION DETECTION
Apparatus and methods for optical emission detection comprising scintillating proximal sensors.
2019/0019836 PIN DIODE STRUCTURE HAVING SURFACE CHARGE SUPPRESSION
A semiconductor structure having: a silicon structure; and a plurality of laterally spaced PiN diodes formed in the silicon structure; and a surface of the...
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