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Patent # Description
2019/0043971 Method for Manufacturing Semiconductor Devices with Superjunction Structures
A method for forming semiconductor device includes providing a semiconductor substrate having an initial surface oxygen concentration in a surface region of...
2019/0043970 FABRICATION OF A TRANSISTOR WITH A CHANNEL STRUCTURE AND SEMIMETAL SOURCE AND DRAIN REGIONS
A vertical channel transistor comprising: a structure made of a given bismuth-based material which passes through a gate block where the structure comprises a...
2019/0043969 BIDIRECTIONAL BIPOLAR-MODE JFET DRIVER CIRCUITRY
Double sided versions of several power transistor types are devices that are already known in the literature. Devices built in this configuration are generally...
2019/0043968 WAFER-SCALE INTEGRATION OF DOPANT ATOMS FOR DONOR- OR ACCEPTOR-BASED SPIN QUBITS
Embodiments of the present disclosure describe a method of fabricating spin qubit device assemblies that utilize dopant-based spin qubits, i.e. spin qubit...
2019/0043967 POST GATE SILICON GERMANIUM CHANNEL CONDENSATION AND METHOD FOR PRODUCING THE SAME
Methods of forming a graded SiGe percentage PFET channel in a FinFET or FDSOI device by post gate thermal condensation and oxidation of a high Ge percentage...
2019/0043966 Forming Odd Number of Fins by Sidewall Imaging Transfer
Techniques for forming an odd number of fins by SIT are provided. In one aspect, a method of forming an odd number of fins by SIT includes the steps of:...
2019/0043965 METHOD, APPARATUS AND SYSTEM FOR IMPROVED PERFORMANCE USING TALL FINS IN FINFET DEVICES
At least one method, apparatus and system disclosed herein fin field effect transistor (finFET) comprising a tall fin having a plurality of epitaxial regions....
2019/0043964 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a first gate structure and a second...
2019/0043963 TRANSISTOR ELEMENT WITH GATE ELECTRODE OF REDUCED HEIGHT AND RAISED DRAIN AND SOURCE REGIONS AND METHOD OF...
A transistor element of a sophisticated semiconductor device includes a gate electrode structure including a metal-containing electrode material instead of the...
2019/0043962 TITANIUM ALUMINUM AND TANTALUM ALUMINUM THIN FILMS
A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one...
2019/0043961 SEMICONDUCTOR DEVICE
A semiconductor device is provided that is excellent in semiconductor properties and Schottky characteristics. A semiconductor device includes: a semiconductor...
2019/0043960 MODIFIED FLOATING GATE AND DIELECTRIC LAYER GEOMETRY IN 3D MEMORY ARRAYS
A 3D memory structure including a modified floating gate and dielectric layer geometry is described. In embodiments, a memory cell includes a channel region...
2019/0043959 INTEGRATED CIRCUIT DEVICE
An integrated circuit device includes a substrate, a gate structure, a spacer structure, a source/drain region, and a first contact structure. The substrate...
2019/0043958 ELECTRONIC DEVICE INCLUDING A TRANSISTOR STRUCTURE HAVING DIFFERENT SEMICONDUCTOR BASE MATERIALS AND A PROCESS...
An electronic device can include a transistor structure. In an embodiment, the transistor structure can include a channel region and a drift structure...
2019/0043957 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SILICON CARBIDE SEMICONDUCTOR DEVICE
A silicon carbide semiconductor device includes a semiconductor substrate of a first conductivity type; an active region in which a main current flows provided...
2019/0043956 LOW DEFECT III-V SEMICONDUCTOR TEMPLATE ON POROUS SILICON
A method of forming a semiconductor on a porous semiconductor structure. The method may include forming a stack, the stack includes (from bottom to top) a...
2019/0043955 GATE WALLS FOR QUANTUM DOT DEVICES
Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include:...
2019/0043954 SUPERLATTICE MATERIALS AND APPLICATIONS
A superlattice cell that includes Group IV elements is repeated multiple times so as to form the superlattice. Each superlattice cell has multiple ordered...
2019/0043953 MULTI-SPACERS FOR QUANTUM DOT DEVICE GATES
Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include:...
2019/0043952 QUANTUM DOT DEVICES WITH OVERLAPPING GATES
Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include:...
2019/0043951 QUANTUM DOT DEVICES WITH STRAIN CONTROL
Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include:...
2019/0043950 QUANTUM DOT DEVICES WITH PASSIVE BARRIER ELEMENTS IN A QUANTUM WELL STACK BETWEEN METAL GATES
A quantum dot device is disclosed that includes a quantum well stack, a first and a second plunger gates above the quantum well stack, and a passive barrier...
2019/0043949 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
Occurrence of short-channel characteristics and parasitic capacitance of a MOSFET on a SOI substrate is prevented. A sidewall having a stacked structure...
2019/0043948 NANOWIRE TRANSISTOR FABRICATION WITH HARDMASK LAYERS
A nanowire device of the present description may be produced with the incorporation of at least one hardmask during the fabrication of at least one nanowire...
2019/0043947 NANOTUBE SEMICONDUCTOR DEVICES
Semiconductor devices are formed using a pair of thin epitaxial layers (nanotubes) of opposite conductivity type formed on sidewalls of dielectric-filled...
2019/0043946 SEMICONDUCTOR DEVICE INCLUDING METAL-2 DIMENSIONAL MATERIAL-SEMICONDUCTOR CONTACT
A semiconductor device includes a semiconductor layer, a metal layer electrically contacting the semiconductor layer, and a two-dimensional material layer...
2019/0043945 LATERAL BIPOLAR JUNCTION TRANSISTOR WITH ABRUPT JUNCTION AND COMPOUND BURIED OXIDE
A lateral bipolar junction transistor (LBJT) device that may include a dielectric stack including a pedestal of a base region passivating dielectric and a...
2019/0043944 METHODS, APPARATUS AND SYSTEM FOR FORMING INCREASED SURFACE REGIONS WITHIN EPI STRUCTURES FOR IMPROVED TRENCH...
At least one method, apparatus and system disclosed herein involves forming increased surface regions within EPI structures. A fin on a semiconductor substrate...
2019/0043942 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
According to one embodiment, a semiconductor device includes first to fourth semiconductor regions, a first electrode, and a first insulating film. The first...
2019/0043941 Semiconductor Device Including Contact Plugs and Conductive Layers Theron
Disclosed herein is a device that includes: a semiconductor substrate; a first insulating layer over a surface of the semiconductor substrate; first and second...
2019/0043940 TILE DISPLAY DEVICES AND DISPLAY DEVICES
A tile display device is provided. The tile display device includes a first tile substrate, the first tile substrate includes a first portion and a second...
2019/0043939 DISPLAY UNIT, METHOD OF MANUFACTURING DISPLAY UNIT, AND ELECTRONIC APPARATUS
A display unit includes a display panel including a display region and a terminal region on a first substrate, the display region including a plurality of...
2019/0043938 DISPLAY APPARATUS
A display apparatus includes: a substrate including a display area where a plurality of pixels are arranged to display an image, and a non-display area around...
2019/0043937 DISPLAY DEVICE
A display device includes: a plurality of pixels each including a driving thin film transistor and a storage capacitor, wherein each of the pixels further...
2019/0043936 ORGANIC ELECTROLUMINESCENCE DISPLAY DEVICE
Provided is an organic electroluminescence display device including a substrate, a first electrode disposed on the substrate, a pixel defining layer disposed...
2019/0043935 DISPLAY UNIT AND METHOD OF PRODUCING THE SAME, DISPLAY PANEL
The present disclosure relates to a display unit and a method of producing the same, and a display panel. In an embodiment, the display unit comprises: a...
2019/0043934 DISPLAY DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS
A disclosed display device includes first electrodes, a second electrode, an organic layer arranged between the first electrodes and the second electrode, and...
2019/0043933 DISPLAY DEVICE
A display device includes a substrate having a plurality of transmissive regions aligned in a first direction and a second direction, a plurality of first...
2019/0043932 PIXEL STRUCTURE OF ORGANIC LIGHT EMITTING DIODE DISPLAY
A pixel structure of an organic light emitting diode display comprises a substrate and a plurality of pixels arranged on the substrate. The plurality of pixels...
2019/0043931 ORGANIC LIGHT-EMITTING DISPLAY APPARATUS
An organic light-emitting display apparatus includes a first sub-pixel, a second sub-pixel, and a third sub-pixel configured to emit different colors of light....
2019/0043930 OLED DISPLAY PANEL, METHOD FOR MANUFACTURING THE SAME AND OLED DISPLAY DEVICE
The present disclosure discloses an OLED display panel, a method for manufacturing the same and the OLED display device. The OLED display panel comprises a...
2019/0043929 LIGHT EMITTING DIODE
A light-emitting diode according to an exemplary embodiment includes: a first electrode; a second electrode overlapping the first electrode; an emission layer...
2019/0043928 ELECTRONIC DEVICE INCLUDING FLEXIBLE DISPLAY PANEL
An electronic device includes a first lead, a second lead, a touch sensitive display panel including a screen area and an extended area that extends from the...
2019/0043927 TOUCH SENSOR IN-CELL TYPE ORGANIC ELECTROLUMINESCENT DEVICE
Disclosed is an in-cell type organic electroluminescent device. The in-cell type organic electroluminescent device according to an embodiment of the present...
2019/0043926 ORGANIC COMPOUND AND PHOTOELECTRIC CONVERSION ELEMENT
Provided is an organic compound represented by the following general formula [1], the compound having an absorption peak in a long wavelength region of a...
2019/0043925 LIGHT EMITTING PHOTOTRANSISTOR
A photonic conversion device is provided, comprising a photoactive layer, a dielectric layer, a porous conductor layer, and an electron transport layer in...
2019/0043924 MEMORY STRUCTURES HAVING REDUCED VIA RESISTANCE
A memory structure can include a memory cell, a via, a dielectric material separating the memory cell from the via, a metal ceramic composite material layer on...
2019/0043923 CURRENT DELIVERY AND SPIKE MITIGATION IN A MEMORY CELL ARRAY
A single memory cell array is formed to maintain current delivery and mitigate current spike through the deposition of resistive materials in two or more...
2019/0043922 INTEGRATED CIRCUITS WITH MEMORY CELLS AND METHODS FOR PRODUCING THE SAME
Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a substrate having a buried...
2019/0043921 MAGNETORESISTIVE DEVICE DESIGN AND PROCESS INTEGRATION WITH SURROUNDING CIRCUITRY
Magnetoresistive device architectures and methods for manufacturing are presented that facilitate integration of process steps associated with forming such...
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