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Patent # Description
2019/0043920 AN ULTRASONIC SENSING DEVICE
An electronic device comprises a CMOS substrate having a first surface and a second surface opposite the first surface. A plurality of ultrasonic transducers...
2019/0043919 QUANTUM CIRCUIT ASSEMBLIES WITH AT LEAST PARTIALLY BURIED TRANSMISSION LINES AND CAPACITORS
Embodiments of the present disclosure propose quantum circuit assemblies with transmission lines and/or capacitors that include layer-conductors oriented...
2019/0043918 INTEGRATED CIRCUIT COMPONENTS INCORPORATING ENERGY HARVESTING COMPONENTS/DEVICES, AND METHODS FOR FABRICATION,...
An integrated circuit system, structure and/or component is provided that includes an integrated electrical power source in a form of a unique, ...
2019/0043917 REDUNDANCY IN INORGANIC LIGHT EMITTING DIODE DISPLAYS
Methods and apparatus for use in the manufacture of a display device including pixels. Each pixel includes a plurality of sub-pixels, each sub-pixel configured...
2019/0043916 MICRO LED DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME
The present invention relates to a puzzle-type micro light emitting diode (LED) display device which is capable of implementing a display having various sizes,...
2019/0043915 METHOD OF FORMING DEEP TRENCH ISOLATION IN RADIATION SENSING SUBSTRATE AND IMAGE SENSOR DEVICE
A method of forming a deep trench isolation in a radiation sensing substrate includes: forming a trench in the radiation sensing substrate; forming a corrosion...
2019/0043914 STRUCTURES, SYSTEMS AND METHODS FOR ELECTRICAL CHARGE TRANSPORT ACROSS BONDED INTERFACES
Oxide-free, low temperature wafer bonding permits electric current to cross the covalently bonded interface unimpeded by traps, recombination centers and...
2019/0043913 IMAGE SENSOR AND IMAGE CAPTURE DEVICE
An image sensor includes: a plurality of pixels having photoelectric conversion units that convert incident light to charges, and readout units; a first signal...
2019/0043912 Semiconductor Devices, Methods of Manufacturing Thereof, and Image Sensor Devices
Semiconductor devices, methods of manufacturing thereof, and image sensor devices are disclosed. In some embodiments, a semiconductor device comprises a...
2019/0043911 IMAGING DEVICE
The present technology relates to an imaging device designed to be able to reduce luminance unevenness. An imaging device includes a photodiode and a wiring...
2019/0043910 IMAGE PICKUP DEVICE AND ELECTRONIC APPARATUS
The present disclosure relates to an image pickup device and an electronic apparatus that enable further downsizing of device size. The device includes: a first...
2019/0043909 ELECTRONIC IMAGE-CAPTURING DEVICE COMPRISING A LAYER FORMING OPTICAL LENSES
An electronic image-capturing device includes a wafer having a face exposed to light and including pixel circuits able to deliver electrical signals in the...
2019/0043908 ELECTROMAGNETIC-WAVE-TRANSMITTING FILTER AND ELECTROMAGNETIC-WAVE-SENSING DEVICE
The disclosure has an object to restrain properties of a filter from declining in reducing the filter in size. A periodically structured filter includes a...
2019/0043907 EMBEDDED IMAGE SENSOR SEMICONDUCTOR PACKAGES AND RELATED METHODS
An embedded image sensor package including a transparent cover having a first side and an opposing second side. A first layer couples over the second side of...
2019/0043906 EMBEDDED IMAGE SENSOR SEMICONDUCTOR PACKAGES AND RELATED METHODS
An embedded image sensor package including a transparent cover having a first side and an opposing second side. A first layer couples over the second side of...
2019/0043905 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device including a semiconductor substrate having oppositely facing first and second surfaces, the first surface being an active surface and...
2019/0043904 IMAGE SENSOR PACKAGE TO LIMIT PACKAGE HEIGHT AND REDUCE EDGE FLARE
An image sensor package, comprising a silicon substrate; an image sensor pixel array that is formed on the silicon substrate; a peripheral circuit region that...
2019/0043903 STACKED IMAGE SENSOR CAPACITORS AND RELATED METHODS
Implementations of image sensors may include a first die including an image sensor array and a first plurality of interconnects where the image sensor array...
2019/0043902 SEMICONDUCTOR DEVICES
Semiconductor devices are provided. The semiconductor devices may include a substrate, a device isolation pattern in the substrate to electrically isolate a...
2019/0043901 SOLID-STATE IMAGING ELEMENT, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS
The present technology relates to a solid-state imaging element configured so that pixels can be more reliably separated, a method for manufacturing the...
2019/0043900 SOLID-STATE IMAGING DEVICE, METHOD OF DRIVING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS
The present technique relates to a solid-state imaging device, a method of driving the solid-state imaging device, and an electronic apparatus each of which...
2019/0043899 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
The number of masks and photolithography processes used in a manufacturing process of a semiconductor device are reduced. A first conductive film is formed...
2019/0043898 ARRAY SUBSTRATE MOTHERBOARD, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE
An array substrate motherboard, a manufacturing method thereof and a display device are provided. The manufacturing method includes forming a film layer...
2019/0043897 METHOD FOR FABRICATING ARRAY SUBSTRATE, ARRAY SUBSTRATE AND DISPLAY DEVICE
The present disclosure describes a method for fabricating an array substrate, an array substrate, and a display device. The method includes the following...
2019/0043896 SEMICONDUCTOR ELEMENT AND DISPLAY DEVICE USING THE SAME
A display device including a semiconductor element is provided. The semiconductor element includes: a semiconductor having an active layer; a gate insulating...
2019/0043895 DISPLAY PANEL
A display panel including a first substrate, an active element layer, a pixel electrode layer, an auxiliary conductive layer, a first spacer and a second...
2019/0043894 Substrate For Curved Display Panel, Curved Display Panel, And Curved Display Device
Embodiments of the present disclosure relate to a substrate for a curved display panel, the curved display panel, and a curved display device. A substrate for...
2019/0043893 METHOD FOR FABRICATING A DISPLAY SUBSTRATE
The present disclosure discloses a method for fabricating a display substrate, belonging to the technical field of displaying. The method includes: providing a...
2019/0043892 DISPLAY DEVICE
The present disclosure relates to a display panel including: a substrate including an active area for displaying an image, and a non-active area surrounding...
2019/0043891 ARRAY SUBSTRAE AND MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE
An array substrate includes a carrier plate, a first heat dissipation layer, and a function layer sequentially stacked on each other. The function layer is...
2019/0043890 Integrated Structures Including Material Containing Silicon, Nitrogen, and at Least One of Carbon, Oxygen,...
Some embodiments include an integrated structure having vertically-stacked conductive levels alternating with dielectric levels. A layer over the conductive...
2019/0043889 VERTICAL MEMORY DEVICES
A vertical memory device includes a substrate, a plurality of channels on the substrate and extending in a first direction that vertical to a top surface of...
2019/0043887 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Provided herein is a semiconductor device including N stacked groups (where N is a natural number greater than or equal to two) sequentially stacked over a...
2019/0043886 MEMORY DEVICE
A memory device includes a plurality of gate electrode layers stacked on a substrate, a plurality of channel layers penetrating the plurality of gate electrode...
2019/0043885 VERTICAL MEMORY DEVICES
According to example embodiments, a vertical memory device includes a low resistance layer on a lower insulation layer, a channel layer on the low resistance...
2019/0043884 Vertical String Of Memory Cells Individually Comprising A Programmable Charge Storage Transistor Comprising A...
A method of forming a vertical string of memory cells comprises forming a lower stack comprising first alternating tiers comprising vertically-alternating...
2019/0043883 WORD LINE STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
Methods and structures of a three-dimensional memory device are disclosed. In an example, the memory device includes a substrate, a first tier of conductor...
2019/0043882 MEMORY DEVICE WITH REDUCED CAPACITANCE
Embodiments of the present disclosure are directed towards techniques to provide a memory device with reduced capacitance. In one embodiment, a memory array is...
2019/0043881 THREE-DIMENSIONAL SEMICONDUCTOR DEVICES INCLUDING VERTICAL STRUCTURES WITH VARIED SPACING AND METHODS OF...
A three-dimensional semiconductor device is disclosed. The device may include an electrode structure that can include a plurality of electrodes that are...
2019/0043880 THREE-DIMENSIONAL SEMICONDUCTOR DEVICE
A three-dimensional semiconductor device includes gate electrodes including pad regions sequentially lowered by a first step portion in a first direction and...
2019/0043879 THROUGH ARRAY CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
Embodiments of through array contact structures of a 3D memory device and fabricating method thereof are disclosed. The 3D NAND memory device includes an...
2019/0043878 METHOD TO FABRICATE UNIFORM TUNNELING DIELECTRIC OF EMBEDDED FLASH MEMORY CELL
The present disclosure relates to a method of forming an embedded flash memory cell that provides for improved performance by providing for a tunnel dielectric...
2019/0043877 NON-VOLATILE MEMORY DEVICE WITH REDUCED DISTANCE BETWEEN CONTROL GATE ELECTRODE AND SELECTING GATE ELECTRODE...
A non-volatile memory device includes a semiconductor substrate, a control gate electrode, a first oxide-nitride-oxide (ONO) structure, a selecting gate...
2019/0043876 SELECTIVE DEPOSITION OF SiN ON HORIZONTAL SURFACES
Methods and apparatuses for selectively depositing silicon nitride (SiN) via high-density plasma chemical vapor deposition (HDP CVD) to form a SiN pad on an...
2019/0043875 FLASH MEMORY COMPONENTS AND METHODS
Flash memory technology is disclosed. In one example, a flash memory component can include a plurality of conductive layers vertically spaced apart from one...
2019/0043874 WORDLINE BRIDGE IN A 3D MEMORY ARRAY
The present disclosure relates to providing a wordline bridge between wordlines of adjacent tiles of memory cells to reduce the number wordline staircases in...
2019/0043873 MEMORY DEVICE WITH VERTICAL STRING DRIVERS
Embodiments of the present disclosure are directed towards a memory device with vertical string drivers, in accordance with some embodiments. In one...
2019/0043872 SEMICONDUCTOR MEMORY DEVICE OF THREE-DIMENSIONAL STRUCTURE
A semiconductor memory device includes first and second memory blocks each including conductive and dielectric layers alternately stacked over a semiconductor...
2019/0043871 FLASH MEMORY CELLS
3D NAND memory cells can include a source layer, a dielectric layer disposed on the source layer, and a select gate source (SGS) layer disposed on the...
2019/0043870 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING
The present disclosure relates to a method of forming sidewall spacers configured to improve dielectric fill between adjacent gate structures. In some...
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