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Patent # Description
2019/0058072 SOLAR CELL PANEL
Disclosed is a solar cell panel including a plurality of solar cells including a first solar cell and a second solar cell, and a wiring portion extending in a...
2019/0058071 IMPROVED SOLAR ARRAY MODULE SYSTEM FOR GENERATING ELECTRIC POWER
Solar power generation system has at least one solar-array module. The solar cells in a solar-array module are interconnected in a crisscross matrix network...
2019/0058070 Backside Illuminated Photo-Sensitive Device with Gradated Buffer Layer
A photo-sensitive device includes a uniform layer, a gradated buffer layer over the uniform layer, a silicon layer over the gradated buffer layer, a...
2019/0058069 Core-shell nanoparticles for photovoltaic absorber films
A method for the preparation of CIGS-type core-shell nanoparticles produces core-shell nanoparticles that may include a quaternary or ternary metal...
2019/0058068 High-Efficiency Bulk Photovoltaic Effect Devices
The present invention is directed to photovoltaic and photogalvanic devices and methods of generating electrical energy and power or detecting light therefrom,...
2019/0058067 SINGLE-STEP METAL BOND AND CONTACT FORMATION FOR SOLAR CELLS
A method for fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a...
2019/0058066 SYSTEM AND METHOD FOR PRINTING ELECTRODES OF SOLAR CELL BY AUTOMATICALLY POSITIONING
A system and method for printing electrodes of a solar cell by automatically positioning are provided. The system includes: a transparent glass plate...
2019/0058065 Power Diode and Method of Manufacturing a Power Diode
A method of processing a power diode includes: creating an anode region and a drift region in a semiconductor body: and forming, by a single ion implantation...
2019/0058064 ARRAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE
Embodiments of the present disclosure provide an array substrate, a method for manufacturing an array substrate and a display device. The array substrate...
2019/0058063 Selective Growth for High-Aspect Ratio Metal Fill
An improved conductive feature for a semiconductor device and a technique for forming the feature are provided. In an exemplary embodiment, the semiconductor...
2019/0058061 SEMICONDUCTOR SWITCHING ELEMENT
A trench gate semiconductor switching element is provided. The semiconductor substrate of this element includes a second conductivity type bottom region in...
2019/0058060 SEMICONDUCTOR SWITCHING ELEMENT
A trench gate semiconductor switching element is provided. The semiconductor substrate of the element includes a second conductivity type bottom region in...
2019/0058059 SEMICONDUCTOR DEVICE INCLUDING NON-MONOCRYSTALLINE STRINGER ADJACENT A SUPERLATTICE-STI INTERFACE
A semiconductor device may include a semiconductor substrate and first and second spaced apart shallow trench isolation (STI) regions therein, and a...
2019/0058058 DETECTION CIRCUIT FOR PHOTO SENSOR WITH STACKED SUBSTRATES
Embodiments relate to a stacked photo sensor assembly where two substrates are stacked vertically. The two substrates are connected via interconnects at a...
2019/0058057 RC-IGBT
A power semiconductor device includes a semiconductor body, a first load terminal structure arranged at a front side of the semiconductor body, and a second...
2019/0058056 TRENCH-GATE INSULATED-GATE BIPOLAR TRANSISTORS (IGBTs) AND METHODS OF MANUFACTURE
In a general aspect, an insulated gate bipolar transistor (IGBT) device can include an active region, an inactive region and a trench extending along a...
2019/0058055 TRENCH-GATE INSULATED-GATE BIPOLAR TRANSISTORS (IGBTs) AND METHODS OF MANUFACTURE
In a general aspect, an insulated gate bipolar transistor (IGBT) device can include an active region, an inactive region and a trench extending along a...
2019/0058054 SEMICONDUCTOR DEVICE
On a single-crystal semiconductor substrate with an upper surface including a first direction in which an inverted mesa step extends and a second direction in...
2019/0058053 LOW BAND GAP SEMICONDUCTOR DEVICES HAVING REDUCED GATE INDUCED DRAIN LEAKAGE (GIDL) AND THEIR METHODS OF...
Embodiments of the present invention are directed to low band gap channel semiconductor devices. In an example, a device includes a first semiconductor...
2019/0058052 INNER SPACER FORMATION IN A NANOSHEET FIELD-EFFECT TRANSISTOR
Structures for a nanosheet field-effect transistor and methods for forming a structure for a nanosheet field-effect transistor. A body feature is formed that...
2019/0058051 SEMICONDUCTOR DEVICE INCLUDING CHANNEL PATTERN AND MANUFACTURING METHOD THEREOF
A semiconductor device and a method of manufacturing a semiconductor device, the semiconductor device including a channel pattern on a substrate, the channel...
2019/0058050 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a spacer around the gate structure;...
2019/0058049 FERROELECTRIC-BASED FIELD-EFFECT TRANSISTOR WITH THRESHOLD VOLTAGE SWITCHING FOR ENHANCED ON-STATE AND...
Techniques are disclosed herein for ferroelectric-based field-effect transistors (FETs) with threshold voltage (VT) switching for enhanced RF switch transistor...
2019/0058048 OHMIC ELECTRODE
An ohmic electrode that is used in, for example, a power semiconductor device including: a SiC substrate including an ohmic contact layer formed on a SiC...
2019/0058047 VERTICAL TRANSISTORS HAVING IMPROVED GATE LENGTH CONTROL
Embodiments of the invention form a channel fin across from a major surface of a substrate, wherein a top surface of the channel fin extends substantially...
2019/0058046 VERTICAL TRANSISTORS HAVING IMPROVED GATE LENGTH CONTROL
Embodiments of the invention form a channel fin across from a major surface of a substrate, wherein a top surface of the channel fin extends substantially...
2019/0058045 FIN-TYPE FET WITH LOW SOURCE OR DRAIN CONTACT RESISTANCE
Embodiments of the invention are directed to methods of forming a FinFET. A non-limiting example method includes forming a fin across from a major surface of a...
2019/0058044 FIN-TYPE FET WITH LOW SOURCE OR DRAIN CONTACT RESISTANCE
Embodiments of the invention are directed to methods of forming a FinFET. A non-limiting example method includes forming a fin across from a major surface of a...
2019/0058043 TRANSISTOR GATE-CHANNEL ARRANGEMENTS
Disclosed herein are transistor gate-channel arrangements, and related methods and devices. For example, in some embodiments, a transistor gate-channel...
2019/0058042 TRANSISTORS INCLUDING RETRACTED RAISED SOURCE/DRAIN TO REDUCE PARASITIC CAPACITANCES
Techniques are disclosed for forming transistors including retracted raised source/drain (S/D) to reduce parasitic capacitance. In some cases, the techniques...
2019/0058041 GALLIUM NITRIDE VOLTAGE REGULATOR
A gallium nitride transistor can include a silicon substrate and a first oxide layer and a second oxide layer on the substrate. A first gallium nitride layer...
2019/0058040 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A first insulating layer is disposed on a second surface of a semiconductor substrate, and has an opening. A second insulating layer is disposed on the second...
2019/0058039 INTEGRATED CIRCUIT, LDMOS WITH TRAPEZOID JFET, BOTTOM GATE AND BALLAST DRIFT AND FABRICATION METHOD
Disclosed examples include LDMOS transistors and integrated circuits with a gate, a body region implanted in the substrate to provide a channel region under a...
2019/0058038 Forming a Superjunction Transistor Device
A method includes forming first regions of a first doping type and second regions of a second doping type in first and second semiconductor layers such that...
2019/0058037 POWER SEMICONDUCTOR DEVICE
A power semiconductor device includes an emitter electrode disposed on a semiconductor substrate and through which a main current flows, a conductive layer...
2019/0058036 Method and device for incorporating single diffusion break into nanochannel structures of fet devices
A semiconductor device includes a substrate having a working surface, and a plurality of field effect transistor (FET) devices provided on the substrate in a...
2019/0058035 Semiconductor Device
A semiconductor device includes active patterns protruding from a substrate and an insulation structure surrounding lower portions of the active patterns. The...
2019/0058034 MOS TRANSISTORS IN PARALLEL
An electronic chip includes first transistors connected in parallel so that gates of the first transistors are interconnected, drain areas of the first...
2019/0058033 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes a substrate, a liner, and an isolation structure. The substrate has at least one first semiconductor fin and at least one...
2019/0058032 Semiconductor device with improved field layer
A semiconductor device constituted of: a semiconductor layer; and a field layer patterned on said semiconductor layer, said field layer constituted of material...
2019/0058031 CARRIER FOR A SEMICONDUCTOR STRUCTURE
A support for a semiconductor structure includes a charge-trapping layer on a base substrate. The charge-trapping layer consists of a polycrystalline main...
2019/0058030 DISPLAY APPARATUS HAVING REDUCED DEFECTS
Provided is a display apparatus capable of reducing generation of defects during manufacturing of the display apparatus or while in use after being ...
2019/0058029 GATE DRIVER CIRCUIT, DISPLAY DEVICE USING GATE DRIVER CIRCUIT, AND METHOD OF DRIVING DISPLAY DEVICE
A gate driver circuit, a display device, and a method of driving the display device are disclosed. The gate driver circuit includes a first transistor...
2019/0058028 Flexible display device
A flexible display device may include a flexible display panel including a display area disposed a plurality of pixels, a signal line area disposed a plurality...
2019/0058027 DISPLAY DEVICE
A display device includes: a substrate including a display area including pixels at which an image is displayed and a peripheral area at which the image is not...
2019/0058026 ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME
The present application provides an array substrate, which includes a base substrate, and a first electrode, a first protection layer, a semiconductor...
2019/0058025 OLED DEVICE AND METHOD FOR FABRICATING THE SAME
The present disclosure relates to an OLED device and a method for preparing the same. The method includes: providing an OLED basic device; forming a...
2019/0058024 ORGANIC LIGHT EMITTING DIODE DISPLAY PANEL AND METHOD FOR MANUFACTURING SAME
An organic light emitting diode (OLED) display panel and a method for manufacturing the OLED display panel are provided. The OLED display panel includes a...
2019/0058023 PIXEL CIRCUIT AND DISPLAY DEVICE, AND A METHOD OF MANUFACTURING PIXEL CIRCUIT
The display device including a pixel circuit has a first line, a transistor, a light emitting element, and a second line. The transistor is located between the...
2019/0058022 Organic Light Emitting Display Device, Head Mounted Display Including the Same and Method of Fabricating the Same
An organic light emitting display device includes: an insulating layer; first electrodes on the insulating layer and spaced from each other by a gap; an...
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