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Patent # Description
2019/0115444 NEGATIVE CAPACITANCE INTEGRATION THROUGH A GATE CONTACT
A layer of ferroelectric material is incorporated into the gate contact of a metal oxide semiconductor field effect transistor (MOSFET), i.e., outside of the...
2019/0115443 GATE STACK FOR HETEROSTRUCTURE DEVICE
A heterostructure semiconductor device includes a first active layer and a second active layer disposed on the first active layer. A two-dimensional electron...
2019/0115442 Transistor with Multi-Metal Gate
A transistor includes a gate electrode with multiple metals distributed along the width of the gate electrode. Each of the metals in the gate electrode has...
2019/0115441 REDUCED CAPACITANCE COUPLING EFFECTS IN DEVICES
A semiconductor device with reduce capacitance coupling effect which can reduce the overall parasitic capacitances is disclosed. The semiconductor device...
2019/0115440 DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
A display device includes: a thin-film transistor on a substrate, the thin-film transistor including on the substrate: an active layer; a gate electrode...
2019/0115439 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
A semiconductor device includes a first barrier film covering the main surface of the active region and the insulating film layer, the first barrier film...
2019/0115438 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE
In accordance with an aspect of the present disclosure, in a method of manufacturing a semiconductor device, a fin structure in which first semiconductor...
2019/0115437 NEGATIVE CAPACITANCE MATCHING IN GATE ELECTRODE STRUCTURES
A semiconductor device includes a gate electrode structure that is positioned adjacent to a channel region of a transistor element. The gate electrode...
2019/0115436 INSULATED GATE SEMICONDUCTOR DEVICE HAVING TRENCH TERMINATION STRUCTURE AND METHOD
A semiconductor device structure includes a region of semiconductor material comprising a first conductivity type, an active region, and a termination region....
2019/0115435 HIGH ELECTRON MOBILITY TRANSISTOR (HEMT)
HEMT having a drain field plate is provided. The drain field plate is formed in the area between the gate and drain of a HEMT. The drain field plate includes a...
2019/0115434 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR WAFER
Semiconductor devices each include: a semiconductor substrate that contains beta-gallium oxide and has a first conductivity type; a first semiconductor region...
2019/0115433 GRAPHENE FET WITH GRAPHITIC INTERFACE LAYER AT CONTACTS
A method for forming a graphene FET includes providing a graphene layer having a surface. A first metal layer having a work function<4.3 eV is deposited on...
2019/0115432 LAYER, MULTILEVEL ELEMENT, METHOD FOR FABRICATING MULTILEVEL ELEMENT, AND METHOD FOR DRIVING MULTILEVEL ELEMENT
A layer according to one embodiment of the present invention may exhibit a first number of electron states in a low-level electron energy range in a conduction...
2019/0115431 LAYER, MULTILEVEL ELEMENT, METHOD FOR FABRICATING MULTILEVEL ELEMENT, AND METHOD FOR DRIVING MULTILEVEL ELEMENT
A layer according to one embodiment of the present invention may exhibit a first number of electron states in a low-level electron energy range in a conduction...
2019/0115430 SEMICONDUCTOR DEVICE
Provided is a semiconductor device. A semiconductor device includes a substrate, a buffer layer provided on the substrate, a semiconductor layer provided on...
2019/0115429 SEMICONDUCTOR DEVICE WITH CAP ELEMENT
A semiconductor device structure is provided. The semiconductor device structure includes a gate stack over a semiconductor substrate and a source/drain...
2019/0115428 Formation of Dislocations in Source and Drain Regions of FinFET Devices
Embodiments of mechanisms for forming dislocations in source and drain regions of finFET devices are provided. The mechanisms involve recessing fins and...
2019/0115427 NANO-TUBE MOSFET TECHNOLOGY AND DEVICES
This invention discloses a semiconductor power device disposed in a semiconductor substrate and the semiconductor substrate has a plurality of trenches. Each...
2019/0115426 FINS WITH SINGLE DIFFUSION BREAK FACET IMPROVEMENT USING EPITAXIAL INSULATOR
The present disclosure relates to semiconductor structures and, more particularly, to fin structures with single diffusion break facet improvement using an...
2019/0115425 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes a stack structure located on a substrate and includes a first region, in which sacrificial layers and insulating layers are...
2019/0115424 SEMICONDUCTOR DEVICE
A semiconductor device including a transistor disposed on a first region of a substrate, the transistor including source/drain regions, a plurality of channel...
2019/0115423 INSULATED GATE POWER DEVICES WITH REDUCED CARRIER INJECTION IN TERMINATION AREA
A high power vertical insulated-gate switch is described that includes an active region, containing a cell array, and a surrounding termination region. The...
2019/0115422 Capacitor with High Aspect Ratio Silicon Cores
High aspect ratio passive electrical components are presented formed from a single-piece silicon (Si) substrate having a textured surface with at least one...
2019/0115421 PRECISION BEOL RESISTORS
A semiconductor structure that includes a resistor that is located within an interconnect dielectric material layer of an interconnect level is provided. The...
2019/0115420 PRECISION BEOL RESISTORS
A semiconductor structure that includes a resistor that is located within an interconnect dielectric material layer of an interconnect level is provided. The...
2019/0115419 PRECISION BEOL RESISTORS
A semiconductor structure that includes a resistor that is located within an interconnect dielectric material layer of an interconnect level is provided. The...
2019/0115418 PRECISION BEOL RESISTORS
A semiconductor structure that includes a resistor that is located within an interconnect dielectric material layer of an interconnect level is provided. The...
2019/0115417 DISPLAY DEVICE
One embodiment of the present invention provides a highly reliable display device. In particular, a display device to which a signal or a power supply...
2019/0115416 EL DISPLAY PANEL, POWER SUPPLY LINE DRIVE APPARATUS, AND ELECTRONIC DEVICE
Disclosed herein is an electroluminescence display panel including a pixel circuit, a signal line, a scan line, a drive power supply line, a common power...
2019/0115415 DISPLAY DEVICE
A display device that can improve transmittance of a sensor area that overlaps a display area includes a substrate that includes a display area in which a...
2019/0115414 DISPLAY DEVICE, DISPLAY MODULE, METHOD OF MANUFACTURING DISPLAY DEVICE, AND METHOD OF MANUFACTURING DISPLAY MODULE
[Object] To enable further reducing a chip area. [Solution] Provided is a display module including: a display device configured such that a pixel region in which a...
2019/0115413 DISPLAY PANEL AND DISPLAY DEVICE
A display panel includes a contact area which includes an upper conductive layer forming first electrodes of the organic EL elements, a lower conductive layer...
2019/0115412 DISPLAY DEVICE
A display device includes first semiconductor pattern including a first channel portion, a first electrode connected to a driving voltage line, and a second...
2019/0115410 SINGLE-SIDE LIGHT-EMITTING SOURCE, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE
A single-side light-emitting source, a method for manufacturing the same, and a display device are provided. The single-side light-emitting source includes a...
2019/0115409 METHOD OF MANUFACTURING METAL OXIDE FILM AND DISPLAY DEVICE INCLUDING METAL OXIDE FILM
A method of manufacturing a metal oxide film includes injecting a reaction gas and metal precursors into a chamber, forming a first metal precursor film on a...
2019/0115408 DISPLAY DEVICE AND ORGANIC LIGHT EMITTING DIODE (OLED) DISPLAY PANEL
This application provides a display device and an OLED display panel. The display device comprises a storage capacitor. A part of a source and drain metal...
2019/0115407 DISPLAY PANEL AND METHOD OF FABRICATING THE SAME
A display panel includes a base layer having a first region and a bent second region. An inorganic layer is disposed on the base layer. A lower groove is...
2019/0115406 DISPLAY DEVICE AND FABRICATING METHOD THEREOF
A display device including an organic light emitting layer, a pixel circuit, and conductive adhesive having a first density and being in electrical...
2019/0115405 ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
An organic light emitting display device may include a switching element disposed on a substrate, a planarization layer covering the switching element, a first...
2019/0115404 DISPLAY DEVICE
A display device includes a first substrate, an organic light emitting element on the first substrate and including a first electrode, an organic light...
2019/0115403 LARGE AREA ORGANIC LIGHT-EMITTING DIODE DISPLAY
An organic light-emitting diode display includes an auxiliary connection line on a substrate; an auxiliary cathode on and connected to the auxiliary connection...
2019/0115402 PIXEL DEFINITION LAYER AND MANUFACTURING METHOD THEREOF, DISPLAY SUBSTRATE, AND DISPLAY PANEL
A pixel definition layer and a manufacturing method thereof, a display substrate, and a display panel are provided. The pixel definition layer includes: a...
2019/0115401 ORGANIC LIGHT-EMITTING DISPLAY, A METHOD FOR FABRICATING THE SAME, AND AN ORGANIC LIGHT-EMITTING DISPLAY
An organic light-emitting display and a method for fabricating the same, and an organic lighting display are provided. The organic light-emitting display...
2019/0115400 DISPLAY DEVICE
A display device includes: a display panel including a display area and a non-display area adjacent to the display area; a gate driver disposed in the...
2019/0115399 ORGANIC LIGHT EMITTING DISPLAY DEVICE
An organic light emitting display device including a plurality of pixels including a first pixel and a second pixel that is adjacent to the first pixel, each...
2019/0115398 DISPLAY DEVICE AND MANUFACTURING METHOD THEREFOR
A blue fluorescent light-emitting layer is provided in common for a subpixel and a subpixel, a green fluorescent light-emitting layer is provided in common for...
2019/0115397 HIGH-EFFICIENCY OLED DEVICE
The present invention mainly discloses a high-efficiency OLED device, comprising: an anode substrate, a hole transport layer (HTL), at least one emission layer...
2019/0115396 DISPLAY DEVICE
A display device in an embodiment according to the present invention includes a substrate, a plurality of wirings above the insulation surface, an interlayer...
2019/0115395 DISPLAY DEVICE
A display device includes a light-emitting element, a thin film encapsulation layer disposed on the light-emitting element, a protection layer disposed on the...
2019/0115394 SEMICONDUCTOR STRUCTURE AND THE METHOD OF MAKING THE SAME
The present invention provides a semiconductor structure, the semiconductor structure includes a substrate comprising a diffusion region, a transistor...
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