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Patent # Description
2019/0115393 SUPERLATTICE-LIKE SWITCHING DEVICES
A voltage sensitive switching device is described having a superlattice-like cell structure comprising layers of ovonic materials, such as chalcogenide alloys....
2019/0115392 ACCESS DEVICE AND PHASE CHANGE MEMORY COMBINATION STRUCTURE IN BACKEND OF LINE (BEOL)
A combined semiconductor device is fabricated by forming a first access structure from a mixed ionic electronic conduction (MIEC) material. A first side of a...
2019/0115391 METHODS OF FORMING A PHASE CHANGE MEMORY WITH VERTICAL CROSS-POINT STRUCTURE
A non-volatile memory uses phase change memory (PCM) cells in a three dimensional vertical cross-point structure, in which multiple layers of word lines run in...
2019/0115390 METHOD OF MANUFACTURING DISPLAY DEVICE
Disclosed are a method of manufacturing display device, an epitaxial wafer and a display device that includes a display substrate, a first sub pixel unit and a...
2019/0115389 MINIATURE LED DISPLAY PANEL AND MINIATURE LED DISPLAY
A miniature LED display panel and a miniature LED display are provided. The miniature LED display panel includes a first substrate, a second substrate having a...
2019/0115388 Trench Isolation for Image Sensors
An image sensor includes a plurality of photodiodes disposed in a semiconductor material to convert image light into image charge. A floating diffusion is...
2019/0115387 SOLID-STATE IMAGE SENSOR, METHOD FOR PRODUCING SOLID-STATE IMAGE SENSOR, AND ELECTRONIC DEVICE
To provide a solid-state image sensor in which two or more semiconductor chips are bonded together without voids occurring in their bonding surfaces despite...
2019/0115386 METAL MESH LIGHT PIPE FOR TRANSPORTING LIGHT IN AN IMAGE SENSOR
Various embodiments are directed to a light pipe. The light pipe may include a channel within a substrate of an image sensor. The channel may be formed by a...
2019/0115385 PHOTOELECTRIC CONVERTER AND X-RAY DETECTOR
A photoelectric converter of one aspect of the present invention is provided with an element substrate having a photodiode and a thin film transistor arranged...
2019/0115384 SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS
The present technology relates to a solid-state imaging device capable of protecting a photoelectric conversion film with a sealing film that has excellent...
2019/0115383 PHOTOELECTRIC CONVERSION APPARATUS AND EQUIPMENT
Provided is a photoelectric conversion apparatus including: an interlayer insulating film that covers a semiconductor layer and has a contact hole positioned...
2019/0115382 PHOTOTDIODE GATE DIELECTRIC PROTECTION LAYER
The present disclosure, in some embodiments, relates to a method of forming an integrated chip. The method is performed by forming a gate dielectric layer over...
2019/0115381 IMAGE SENSOR
An image sensor may include a photoelectric conversion element, a transfer transistor formed over the photoelectric conversion element, and a reset transistor...
2019/0115380 PIXEL UNIT AND IMAGING DEVICE
An pixel unit includes a photoelectric conversion element, a transfer transistor having a transfer gate abutting on the photoelectric conversion element, and a...
2019/0115379 SOLID-STATE IMAGING DEVICE, CAMERA MODULE AND ELECTRONIC APPARATUS
A solid-state imaging device includes a plurality of photoelectric conversion units, a floating diffusion unit that is shared by the plurality of photoelectric...
2019/0115378 IMAGING DEVICE
An imaging device includes a semiconductor substrate having a first surface; a microlens located above the first surface of the semiconductor substrate; and...
2019/0115377 IMAGING SENSOR
An imaging sensor including a pixel array having a plurality of pixels, the pixel comprises a first photodiode serious connected to a second photodiode to form...
2019/0115376 IMAGE SENSOR DEVICE
The present disclosure, in some embodiments, relates to a semiconductor device. The semiconductor device has a gate stack arranged over a first surface of a...
2019/0115375 Image Sensor
An image sensor includes a substrate including opposite first and second surfaces, first and second gates, on the first surface of the substrate, which each...
2019/0115374 ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, DISPLAY APPARATUS
A method for manufacturing an array substrate includes: forming a metal-oxide semiconductor layer, a first conductive layer and a second conductive layer...
2019/0115373 Display device
A display device is disclosed, which includes: a substrate; a first transistor disposed on the substrate; and a second transistor disposed on the substrate....
2019/0115372 LIGHT-EMITTING DEVICE AND ELECTRONIC DEVICE USING THE SAME
A lightweight flexible light-emitting device which is able to possess a curved display portion and display a full color image with high resolution and the...
2019/0115371 DISPLAY SUBSTRATE, MANUFACTURING METHOD THEREFOR, AND DISPLAY DEVICE
A display substrate, a manufacturing method thereof, and a display device are provided. The manufacturing method of the display substrate includes: forming a...
2019/0115370 ARRAY SUBSTRATE, METHOD FOR MANUFACTURING ARRAY SUBSTRATE, AND DISPLAY PANEL
There are provided an array substrate, a method for manufacturing an array substrate, and a display panel. The array substrate includes: a first flexible...
2019/0115369 METAL LINE AND THIN FILM TRANSISTOR
A metal line includes a conductive layer containing aluminum (Al) or an aluminum alloy, a first capping layer on the conductive layer, the first capping layer...
2019/0115368 ARRAY SUBSTRATE AND DISPLAY PANEL USING THE SAME
A array substrate comprises: a substrate including a display area and a peripheral wiring area, wherein active switches, pixel units and signal lines are...
2019/0115367 Integrated Circuits with Components on Both Sides of a Selected Substrate And Methods of Fabrication
Novel integrated circuits (SOI ICs), and methods for making and mounting the ICs are disclosed. In one embodiment, an IC comprises a first circuit layer of the...
2019/0115366 VERTICAL MEMORY DEVICE
A vertical memory device is provided as follows. A substrate has a cell array region and a connection region adjacent to the cell array region. A first gate...
2019/0115365 MULTI-LAYER STACKS FOR 3D NAND EXTENDABILITY
Embodiments described herein relate to methods and materials for fabricating semiconductor devices, such as memory devices and the like. In one embodiment, a...
2019/0115364 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes: hole source patterns; electron source patterns located between adjacent hole source patterns; a stack structure over the hole...
2019/0115363 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device and a method of manufacturing a semiconductor device pertain to a semiconductor device having a channel pattern, wherein the channel...
2019/0115362 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device and a method of manufacturing a semiconductor device pertain to a semiconductor device having a channel pillar extending in a first...
2019/0115361 NONVOLATILE MEMORY DEVICE INCLUDING ROW DECODER
A nonvolatile memory device includes a substrate; a memory cell array formed on the substrate in a vertically stacked structure; and a row decoder configured...
2019/0115360 ETCHANT COMPOSITION, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME, AND SEMICONDUCTOR DEVICE
Provided herein is a semiconductor device and a method of manufacturing the same. The method includes alternately forming sacrificial layers and interlayer...
2019/0115359 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
In a method of manufacturing a semiconductor device, a wave-type slit is formed a wave-type slit in a stack structure, using an exposure mask including light...
2019/0115358 SEMICONDUCTOR DEVICE
A semiconductor device including: a substrate including a top surface configured to extend in a first direction and a second direction that are perpendicular...
2019/0115357 SEMICONDUCTOR MEMORY DEVICE OF THREE-DIMENSIONAL STRUCTURE
A semiconductor memory device includes a logic structure including a peripheral circuit element which is formed over a substrate, a bottom dielectric layer...
2019/0115356 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes gate stacked structures surrounding channel layers, a common source line filling a separation area between the gate stacked...
2019/0115355 APPARATUSES INCLUDING MEMORY ARRAYS WITH SOURCE CONTACTS ADJACENT EDGES OF SOURCES
Various apparatuses, including three-dimensional (3D) memory devices and systems including the same, are described herein. In one embodiment, a 3D memory...
2019/0115354 INCREASED GATE COUPLING EFFECT IN MULTIGATE TRANSISTOR
Devices and methods of forming a device are disclosed. The device includes a substrate defined with at least a device region. A multi-gate transistor disposed...
2019/0115353 LAYER TRANSFERRED FERROELECTRIC MEMORY DEVICES
A monocrystalline metal-oxide stack including a ferroelectric (FE) tunneling layer and a buffer layer is epitaxially grown on a growth substrate. A first...
2019/0115352 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
A semiconductor device includes a memory region, a plurality of bit lines in the memory region, a first low-k dielectric layer on each sidewall of each bit...
2019/0115351 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
Disclosed are a semiconductor memory device and a method of manufacturing the same. The semiconductor memory device includes a device isolation layer defining...
2019/0115350 THYRISTOR RANDOM ACCESS MEMORY
Devices and methods for forming a device are presented. The device includes a substrate having a well of a first polarity type and a thyristor-based memory...
2019/0115349 Structure and Method for MOSFET Device
The present disclosure provides a semiconductor structure comprising one or more fins formed on a substrate and extending along a first direction; one or more...
2019/0115348 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Disclosed is a method for manufacturing a semiconductor device. The method for manufacturing the semiconductor device includes forming a p-channel over a...
2019/0115347 CONTACT FORMATION THROUGH LOW-TEMPEARATURE EPITAXIAL DEPOSITION IN SEMICONDUCTOR DEVICES
A semiconductor material layer is deposited on a p-type source/drain region of a p-type transistor device and an n-type source/drain region of an n-type...
2019/0115346 CUT INSIDE REPLACEMENT METAL GATE TRENCH TO MITIGATE N-P PROXIMITY EFFECT
The present disclosure relates to semiconductor structures and, more particularly, to a cut inside a replacement metal gate trench to mitigate n-p proximity...
2019/0115345 FinFET Transistor with Fin Back Biasing
A semiconductor device includes a semiconductor substrate; a semiconductor projection connected to the semiconductor substrate; and a gate engaging the...
2019/0115344 Semiconductor Devices and Fabricating Methods Thereof
Provided is a semiconductor device and a fabricating method thereof. The semiconductor device includes a first trench having a first depth to define a fin, a...
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