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Patent # Description
2019/0123196 Trench-Type Field Effect Transistor (Trench FET) With Improved Poly Gate Contact
An integrated circuit (IC) device may include a plurality of trench-type field-effect transistors (trench FETs). Each trench FET may include a poly gate trench...
2019/0123195 SEMICONDUCTOR DEVICE
The present technique relates to a semiconductor device including a current sensor, which can improve the electrostatic discharge ruggedness. The semiconductor...
2019/0123194 TRENCH MOSFET WITH DEPLETED GATE SHIELD AND METHOD OF MANUFACTURE
A semiconductor device, method of manufacture of a semiconductor device, and electronic system are disclosed. For example, the semiconductor device includes at...
2019/0123193 Semiconductor Device and Method for Manufacturing a Semiconductor Device
In an embodiment, a semiconductor device is provided. The semiconductor device includes: a semiconductor body of a first conductivity type having opposing...
2019/0123192 SWITCHING ELEMENT AND METHOD OF MANUFACTURING THE SAME
A switching element may include a semiconductor substrate, a trench, a gate insulating film, and a gate electrode. A drift region may be in contact with the...
2019/0123191 SEMICONDUCTOR DEVICE INCLUDING SILICON CARBIDE
A semiconductor device includes: an n+ type of silicon carbide substrate, an n- type of layer, first trenches, a p type of region, a p+ type of region, an n+...
2019/0123190 Method for Forming Semiconductor Devices
A method for forming a semiconductor device includes forming a body implant region of a vertical field effect transistor arrangement in a semiconductor...
2019/0123189 MULTI-GATE SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
A multi-gate semiconductor device includes a substrate, a stacked wire structure disposed over the substrate, a gate over the stacked wire structure, and at...
2019/0123188 3D IC SEMICONDUCTOR DEVICE WITH MEMORY
A 3D semiconductor device including: a first level including a single crystal layer, a plurality of first transistors and at least one metal layer, where the...
2019/0123187 SEMICONDUCTOR DEVICE
A semiconductor device has a lateral switching device that includes a channel forming layer, a gate structure portion, a source electrode, a drain electrode, a...
2019/0123186 IGBT with dV/dt Controllability
A power semiconductor device includes an active cell region with a drift region, and IGBT cells at least partially arranged within the active cell region. Each...
2019/0123185 Method for Producing IGBT with dV/dt Controllability
A method of processing a semiconductor device includes: providing a semiconductor body with a drift region; forming trenches extending into the semiconductor...
2019/0123184 Vertical Tunneling Field-Effect Transistor Cell and Fabricating the Same
Tunneling field-effect transistors (TFETs) and associated methods of fabrication are disclosed herein. An exemplary TFET includes a protrusion that extends...
2019/0123183 QUANTUM DEVICE WITH SPIN QUBITS COUPLED IN MODULATABLE MANNER
A quantum device with spin qubits, comprising: a semiconductor portion arranged on a buried dielectric layer of a semiconductor-on-insulator substrate also...
2019/0123182 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
The reliability of a semiconductor device is improved. A first insulating film and a protective film are formed on a semiconductor substrate. The first...
2019/0123181 FinFET Devices and Methods of Forming
A finFET device and methods of forming a finFET device are provided. The method includes forming a capping layer over a fin of a fin field effect transistor...
2019/0123180 Integrated Circuit Structure with Substrate Isolation and Un-Doped Channel
Integrated circuit devices, such as fin-like field effect transistors, and methods of fabricating thereof are disclosed herein. An exemplary device includes a...
2019/0123179 Self-Aligned Passivation of Active Regions
A method includes forming a semiconductor fin, performing a first passivation step on a top surface of the semiconductor fin using a first passivation species,...
2019/0123178 ASPECT RATIO TRAPPING IN CHANNEL LAST PROCESS
A method of forming the fin structure that includes forming a replacement gate structure on a channel region of the at least one replacement fin structure; and...
2019/0123177 FinFET Structure and Method for Fabricating the Same
A device includes a fin structure protruding over a substrate, wherein the fin structure comprises a plurality of portions formed of different materials, a...
2019/0123176 SEMICONDUCTOR CHIP AND MANUFACTURING METHOD THEREOF
A semiconductor chip includes a substrate and a transistor. The transistor is formed on the substrate and includes an insulation layer and a fin. The fin...
2019/0123175 FINFET STRUCTURE AND METHOD FOR FORMING THE SAME
A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a fin structure protruding therefrom, an...
2019/0123174 Vertical Transport FET (VFET) with Dual Top Spacer
A VFET device with a dual top spacer to prevent source/drain-to-gate short, and techniques for formation thereof are provided. In one aspect, a method of...
2019/0123173 PREPARATION METHOD OF BOTTOM-GATE TYPE LOW-TEMPERATURE POLYSILICON TRANSISTOR
A preparation method of a bottom-gate type low-temperature polysilicon transistor is disclosed in the present disclosure. The preparation method includes:...
2019/0123172 INSULATED GATE POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SUCH A DEVICE
An insulated gate power semiconductor device includes an (n-) doped drift layer between an emitter side and a collector side. A p doped protection pillow...
2019/0123171 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE TO UNIFORMLY FORM THICKNESS OF GATE INSULATING LAYER
A manufacturing method of a semiconductor device is provided. The method includes sequentially forming an n- type of layer, a p type of region, and an n+ type...
2019/0123170 ASYMMETRIC SPACER FOR LOW CAPACITANCE APPLICATIONS
An embodiment includes an apparatus comprising: a transistor including a source, a drain, and a gate that has first and second sidewalls; a first spacer on the...
2019/0123169 ELECTRONIC DEVICE INCLUDING TRANSISTOR AND METHOD FOR FABRICATING THE SAME
A method for fabricating an electronic device is provided to include: forming a hard mask pattern over a substrate to expose a gate formation region; forming a...
2019/0123168 Structure and Formation Method of Semiconductor Device Structure with Gate Stack
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate and a...
2019/0123167 SEMICONDUCTOR DEVICES HAVING EQUAL THICKNESS GATE SPACERS
A method is presented for forming equal thickness gate spacers for a CMOS (complementary metal oxide semiconductor) device, the method includes forming a PFET...
2019/0123166 Silicide Block Isolation For Reducing Off-Capacitance of A Radio Frequency (RF) Switch
A silicon-on-insulator (SOI) CMOS transistor structure includes a plurality of series-connected SOI CMOS transistors, including a plurality of parallel...
2019/0123165 SEMICONDUCTOR DEVICE AND CMOS TRANSISTOR
There is provided a semiconductor device. The semiconductor device includes a first electrode made of a metal, a first semiconductor, a first insulating film...
2019/0123164 TRANSISTOR WITH AIRGAP SPACER
A microelectronic transistor may be fabricated having an airgap spacer formed as a gate sidewall spacer, such that the airgap spacer is positioned between a...
2019/0123163 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE
In a method of manufacturing a semiconductor device, a fin structure, in which first semiconductor layers and second semiconductor layers are alternately...
2019/0123162 METHODS OF FORMING GATE CONTACT STRUCTURES AND CROSS-COUPLED CONTACT STRUCTURES FOR TRANSISTOR DEVICES
One illustrative method disclosed includes, among other things, selectively forming a gate-to-source/drain (GSD) contact opening and a CB gate contact opening...
2019/0123161 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes a field effect transistor (FET). The FET includes a first channel, a first source and a first drain; a second channel, a second...
2019/0123160 METHOD OF FORMING GATE-ALL-AROUND (GAA) FINFET AND GAA FINFET FORMED THEREBY
A method of forming a GAA FinFET, including: forming a fin on a substrate, the substrate having a STI layer formed thereon and around a portion of a FIN-bottom...
2019/0123159 SEMICONDUCTOR DEVICES HAVING GATE STRUCTURES WITH SKIRT REGIONS
Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes an active fin protruding upwardly from a substrate...
2019/0123158 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
A method of manufacturing a semiconductor device includes in the following order: a semiconductor base body preparing step; a first trench forming step; a...
2019/0123157 Conformal Source and Drain Contacts for Multi-Gate Field Effect Transistors
A semiconductor device includes a fin having a first semiconductor material, the fin having a source/drain (S/D) region and a channel region, the S/D region...
2019/0123156 THIN FILM TRANSISTOR AND METHOD OF FABRICATING SAME, ARRAY SUBSTRATE AND DISPLAY DEVICE
The present application provides a thin film transistor, an array substrate, a display device and a method of fabricating a thin film transistor. According to...
2019/0123155 TRANSISTORS HAVING GATES WITH A LIFT-UP REGION
In accordance with at least one embodiment of the invention, a transistor comprises a semiconductor, a first drift layer, a drain region, a body region, a...
2019/0123154 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor device including, a semiconductor layer including a plurality of first trenches formed therein and a second trench formed in a region between...
2019/0123153 Semiconductor Device and Method for Fabricating a Semiconductor Device
In an embodiment, a semiconductor device is provided that includes a semiconductor body having a first conductivity type, a first major surface and a second...
2019/0123152 SEMICONDUCTOR DEVICE
A semiconductor device implementing a field plate is disclosed. The semiconductor device includes electrodes of a source, a gate, and a drain; an insulating...
2019/0123151 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
The present disclosure relates to a semiconductor device and a method of manufacturing the same. The semiconductor device includes a semiconductor layer; a...
2019/0123150 TRANSISTOR HAVING LOW CAPACITANCE FIELD PLATE STRUCTURE
A Field Effect Transistor (FET) having a source, drain, and gate disposed laterally along a surface of a semiconductor and a field plate structure: having one...
2019/0123149 THIN-FILM TRANSISTOR INCLUDING TWO-DIMENSIONAL SEMICONDUCTOR AND DISPLAY APPARATUS INCLUDING THE SAME
The present disclosure relates to a thin-film transistor including two-dimensional semiconductor and display apparatus including the same. The thin-film...
2019/0123148 Silicon Carbide Semiconductor Device and a Method for Forming a Silicon Carbide Semiconductor Device
A method for forming a silicon carbide semiconductor device includes forming at least one graphene layer on a surface of a semiconductor substrate and forming...
2019/0123147 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Semiconductor device includes semiconductor substrate, drift layer, first electrode, and second electrode. Semiconductor substrate is of a first conductivity...
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