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Patent # Description
2019/0131345 MICRO-LED DISPLAYS
A micro-light emitting diode (LED) display panel and a method of forming the display panel, the micro-LED display panel having a monolithically grown...
2019/0131344 LIGHT EMITTING DIODE DISPLAY
A light emitting diode display includes a plurality of display units and a plurality of auxiliary display units. The display units are arranged in an array and...
2019/0131343 METHOD FOR PRODUCING AN OPTOELECTRONIC DEVICE COMPRISING A PLURALITY OF GALLIUM NITRIDE DIODES
A method of manufacturing an optoelectronic device, including the successive steps of: a) transferring, onto a surface of a control integrated circuit...
2019/0131342 PIXEL STRUCTURE
A pixel structure includes a light emitting diode chip and a light blocking structure. The light emitting diode chip includes a P-type semiconductor layer, an...
2019/0131341 PIXEL LIGHT EMITTING DEVICE
A pixel light emitting device including a substrate, a plurality of light emitting elements and a shading layer disposed around each of the light emitting...
2019/0131340 IMAGE SENSOR
Disclosed is an image sensor including a substrate having a first surface and a second surface opposite to each other, a first photoelectric conversion region...
2019/0131339 SEMICONDUCTOR IMAGE SENSOR
A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a pixel sensor disposed in the substrate, and a...
2019/0131338 IMAGE SENSOR AND IMAGE-CAPTURING APPARATUS
An image sensor includes: a plurality of pixels each having a photoelectric conversion unit that converts incident light into an electric charge, the incident...
2019/0131337 STACKED IMAGE SENSOR AND SYSTEM INCLUDING THE SAME
A stacked image sensor includes a first semiconductor die and a second semiconductor die. The first semiconductor die includes a pixel array of rows and...
2019/0131336 IMAGE SENSING APPARATUS
An image sensing apparatus includes a first substrate structure, a second substrate structure, and a memory chip. The first substrate structure includes a...
2019/0131335 CAMERA PHOTOSENSITIVE COMPONENT, CAMERA, AND CAMERA SHOOTING TERMINAL
A camera photosensitive component, a camera, and a camera shooting terminal are provided in the field of camera shooting. The camera photosensitive component...
2019/0131334 CMOS IMAGE SENSOR STRUCTURE
A semiconductor device includes a device layer, a semiconductor layer, a sensor element, a dielectric layer, a color filter layer, and a micro-lens. The...
2019/0131333 HIGH DYNAMIC RANGE PIXEL WITH IN-PIXEL LIGHT SHIELD STRUCTURES
Multi-photodiode image pixels may include sub-pixels with differing light sensitivities. Microlenses may be formed over the multi-photodiode image pixels so...
2019/0131332 Image Sensors Having a Reduced Settling Time
Image sensors are provided including a structure capable of settling an output voltage within a very short time for implementing a high-speed image sensor. The...
2019/0131331 CMOS IMAGE SENSOR WITH SHALLOW TRENCH EDGE DOPING
In some embodiments, the present disclosure relates to an integrated chip having a photodetector arranged within a semiconductor substrate having a first...
2019/0131330 Interconnect Structure for Stacked Device and Method
A stacked integrated circuit (IC) device and a method are disclosed. The stacked IC device includes a first semiconductor element and a second semiconductor...
2019/0131329 SEMICONDUCTOR IMAGE SENSOR
A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a pixel sensor disposed in the substrate, an...
2019/0131328 Image Sensor
An image sensor including a substrate having a first, a first device isolation region adjacent to the first surface and defining a unit pixel, a transfer gate...
2019/0131327 SEMICONDUCTOR IMAGE SENSOR
A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a plurality of pixel sensors arranged in an array,...
2019/0131326 IMAGE SENSOR HAVING AN N-TYPE PHOTODIODE AND A P-TYPE PHOTODIODE
An image sensor is provided. The image sensor may include first to fourth unit pixels. The first unit pixel includes a first photodiode, a first transfer gate,...
2019/0131325 ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE
An array substrate, a manufacturing method thereof and a display device. The array substrate includes a substrate, a thin film transistor on the substrate, and...
2019/0131324 ARRAY SUBSTRATE, DISPLAY PANEL AND METHOD OF DRIVING DISPLAY PANEL
Embodiments of the present disclosure provide an array substrate, a display panel and a method of driving the display panel. The array substrate includes: a...
2019/0131323 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
As a display device has higher definition, the number of pixels is increased and thus, the number of gate lines and signal lines is increased. When the number...
2019/0131322 METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR AND THIN-FILM TRANSISTOR
A method for manufacturing a thin-film transistor that includes a source electrode and a drain electrode at least one of which has a layered structure of a...
2019/0131321 DISPLAY PANEL AND DISPLAY DEVICE
A display panel and a display device are provided. The display panel is an LTPO display panel including at least one LTPS thin film transistor and at least one...
2019/0131320 DISPLAY PANEL
A display panel may include a first signal line extending in a first direction, a second signal line extending in the first direction and being spaced apart...
2019/0131319 ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREFOR
An electronic device has a multilayer structure including a plurality of wires in multiple layers, and a conductive material on a surface of the multilayer...
2019/0131318 THIN FILM TRANSISTOR, ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE
A thin-film transistor (TFT), an array substrate, a manufacturing method thereof and a display device are provided. The TFT includes an active layer, a gate...
2019/0131317 ARRAY SUBSTRATE, ITS MANUFACTURING METHOD, AND A DISPLAY DEVICE
A method for manufacturing an array substrate, including forming at least two data lines, forming a buffer layer on the data lines, forming an organic film,...
2019/0131316 Via-hole Connection Structure And Method Of Manufacturing The Same, And Array Substrate And Method Of...
The present disclosure relates to a via-hole connection structure and a method of manufacturing the same and an array substrate and a method of manufacturing...
2019/0131315 METHODS AND APPARATUSES HAVING MEMORY CELLS INCLUDING A MONOLITHIC SEMICONDUCTOR CHANNEL
Methods for forming a string of memory cells, apparatuses having a string of memory cells, and systems are disclosed. One such method for forming a string of...
2019/0131314 VeSFlash Non-Volatile Memory
A non-volatile memory device (VeSFlash) comprises a vertical slit field effect transistor (VeSFET) device comprising a semiconductor portion defining a source...
2019/0131313 SURFACE TOPOGRAPHY BY FORMING SPACER-LIKE COMPONENTS
A wafer having a first region and a second region is provided. A first topography variation exists between the first region and the second region. A first...
2019/0131312 MEMORY DEVICE AND MEMORY CELL
A memory cell includes a first transistor coupled to a source line, wherein the first transistor is in a first well. The memory cell further includes a second...
2019/0131311 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE
A nonvolatile semiconductor storage device includes a plurality of cell transistor pairs including a pair of cell transistors sharing a first node connected to...
2019/0131310 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE
A semiconductor device includes a transistor, an isolation structure, and a fin sidewall structure. The transistor includes a fin extending from a substrate...
2019/0131309 INTEGRATED CIRCUIT CHIP AND MANUFACTURING METHOD THEREOF
An integrated circuit chip includes a substrate, a first type memory cell, and a second type memory cell. The first type memory cell is disposed over the...
2019/0131308 PERIPHERAL LOGIC CIRCUITS UNDER DRAM MEMORY ARRAYS
Various embodiments comprise methods and related apparatuses formed from those methods for placing at least portions of peripheral circuits under a DRAM memory...
2019/0131307 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES HAVING CONTACT PLUGS OVERLAPPING ASSOCIATED BITLINE STRUCTURES...
A semiconductor device can include a plurality of landing pads arranged according to a layout on a substrate, wherein a cross-sectional shape of each of the...
2019/0131306 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
A method for fabricating a semiconductor device includes: forming a mold stack pattern including a plurality of openings in an upper portion of a substrate and...
2019/0131305 Memory Cell Comprising First and Second Transistors and Methods of Operating
Semiconductor memory cells, array and methods of operating are disclosed. In one instance, a memory cell includes a bi-stable floating body transistor and an...
2019/0131304 HIGH RESISTANCE READOUT FET FOR COGNITIVE DEVICE
A semiconductor device includes a source region and a drain region formed in a transistor structure. A channel region is disposed between the source region and...
2019/0131303 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT
A semiconductor device includes: element isolation regions; a projecting semiconductor region; a plurality of first gate electrodes each formed on both side...
2019/0131302 FINFET SEMICONDUCTOR DEVICE
A method of manufacturing FinFET semiconductor devices in memory regions and logic regions includes the steps of forming a first gate material layer on a...
2019/0131301 ELECTRODE STRUCTURE, METHOD OF FABRICATING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE ELECTRODE STRUCTURE
An electrode structure is disclosed. The electrode structure includes a first polysilicon layer doped with resistance adjustment impurities; a second...
2019/0131299 Temperature Compensation Circuits
The present disclosure relates generally to integrated circuits, and more particularly to low-bias voltage reference circuits. The voltage reference circuits...
2019/0131298 Semiconductor Structure Cutting Process and Structures Formed Thereby
Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an...
2019/0131297 Semiconductor Structure Cutting Process and Structures Formed Thereby
Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an...
2019/0131296 BOOTSTRAP METAL-OXIDE-SEMICONDUCTOR (MOS) DEVICE INTEGRATED WITH A HIGH VOLTAGE MOS (HVMOS) DEVICE AND A HIGH...
Various embodiments of the present application are directed towards an integrated circuit (IC) in which a bootstrap metal-oxide-semiconductor (MOS) device is...
2019/0131295 ARRAY SUBSTRATE ASSEMBLY, METHOD OF MANUFACTURING ARRAY SUBSTRATE ASSEMBLY, DISPLAY PANEL AND DISPLAY APPARATUS
An array substrate assembly, a method of manufacturing the array substrate assembly, a display panel and a display apparatus are disclosed. The array substrate...
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