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Patent # Description
2019/0140004 Semiconductor Devices Having Reduced Noise
Semiconductor devices and methods of forming semiconductor devices are disclosed. In some embodiments, a first trench and a second trench are formed in a...
2019/0140003 IMAGE SENSOR AND MANUFACTURING METHOD THEREOF
An image sensor includes a photosensitive device, a storage device, and a driving circuit. The storage device is adjacent to the photosensitive device and...
2019/0140002 ENERGY RAY DETECTOR, DETECTION APPARATUS, AND EQUIPMENT
A detector includes a semiconductor layer included in a detection region and a peripheral region, and having a first surface and a second surface opposite to...
2019/0140001 Semiconductor Image Sensor Device Having Back Side Illuminated Image Sensors with Embedded Color Filters
Disclosed is a method of fabricating a semiconductor image sensor device. The method includes providing a substrate having a pixel region, a periphery region,...
2019/0140000 BACKSIDE-ILLUMINATED COMPLEMENTARY METAL OXIDE SEMICONDUCTOR SENSOR AND THE MANUFACTURING METHOD THEREOF
A backside-illumination complementary metal oxide semiconductor (CMOS) image sensor, comprises a semiconductor substrate including a first side for receiving...
2019/0139999 IMPLANT DAMAGE FREE IMAGE SENSOR AND METHOD OF THE SAME
An image sensor is disclosed. The image sensor includes an epitaxial layer, a plurality of plug structures and an interconnect structure. Wherein the plurality...
2019/0139998 ISOLATION STRUCTURE AND IMAGE SENSOR
An optical isolation structure and a method for fabricating the same are provided. The optical isolation structure includes a first dielectric layer, a second...
2019/0139997 SEMICONDUCTOR IMAGE SENSOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor image sensor device includes a semiconductor substrate, a radiation-sensing region, and a first isolation structure. The radiation-sensing...
2019/0139996 TRANSPARENT SUBSTRATE AND PROCESS FOR PRODUCING IT
To provide a transparent substrate with excellent appearance and with high visibility when observed from a predetermined direction, and a process for producing...
2019/0139995 DISPLAY DEVICE
Provided is a display device including: a capacitor having a first electrode, a first insulating film over the first electrode, and a second electrode over the...
2019/0139994 STRETCHABLE DISPLAY DEVICE
A stretchable display device includes: a first pixel substrate includes a first body part and a first hinge part connected to the first body part; a second...
2019/0139993 DISPLAY PANEL
A display panel is disclosed. The display panel includes a first substrate, a light shielding layer and a color block. The first substrate has a first surface...
2019/0139992 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF
A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a substrate; a gate electrode on the substrate; a...
2019/0139991 LIQUID CRYSTAL DISPLAY DEVICE
A liquid crystal display device includes a display panel, a signal generator, a plurality of wires, and a controller. The display panel has a plurality of...
2019/0139990 DISPLAY DEVICE WITH DIFFERENT CIRCUIT GROUPS
A display device that includes a substrate having a display region and an adjacent peripheral region is provided, including; a plurality of sub-pixels provided...
2019/0139989 Ultra High Density Thin Film Transistor Substrate Having Low Line Resistance Structure and Method for...
A display device is described that has reduced resistance in one or more of the gate, common, data electrical lines that control the operation of the pixels of...
2019/0139988 TRANSISTOR, LIQUID CRYSTAL DISPLAY DEVICE, AND MANUFACTURING METHOD THEREOF
Photolithography and etching steps for forming an island-shaped semiconductor layer are omitted, and a liquid crystal display device is manufactured with four...
2019/0139987 PIXEL UNIT, ARRAY SUBSTRATE AND DISPLAY PANEL
The present disclosure provides a pixel unit, an array substrate and a display panel. The pixel unit includes a main pixel portion and a secondary pixel...
2019/0139986 ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
Disclosed are an array substrate and a method of manufacturing the array substrate. The method of manufacturing an array substrate includes: forming a first...
2019/0139985 Three-Dimensional Semiconductor Devices Including Gate Electrodes
A three-dimensional semiconductor device is provided including main separation structures disposed on a substrate, and extending in a first direction, parallel...
2019/0139984 SEMICONDUCTOR MEMORY DEVICES AND METHODS FOR MANUFACTURING THE SAME
Semiconductor memory devices and methods for manufacturing the same are provided. The device may include vertical channel structures that are two-dimensionally...
2019/0139983 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE
A three-dimensional semiconductor memory device includes an electrode structure including gate electrodes and insulating layers, which are alternately stacked...
2019/0139982 Three-Dimensional Memory Devices and Fabricating Methods Thereof
Embodiments of 3D memory devices and fabricating methods are disclosed. The method can comprise: forming an alternating dielectric stack on a substrate;...
2019/0139981 SEMICONDUCTOR DEVICE
A semiconductor device includes a semiconductor layer, a first conductive layer, a tunneling insulating film, and a charge trapping film. The tunneling...
2019/0139980 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF DETECTING ELECTRICAL FAILURE THEREOF
Disclosed are three-dimensional semiconductor memory devices and methods of detecting electrical failure thereof. The three-dimensional semiconductor memory...
2019/0139979 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE
A three-dimensional semiconductor memory device includes a peripheral logic structure on a semiconductor substrate. A horizontal semiconductor layer is on the...
2019/0139978 NONVOLATILE MEMORY DEVICE
A three-dimensional (3D) nonvolatile memory includes a stacked structure that includes a plurality of conductive layers that alternate with and are spaced...
2019/0139977 SEMICONDUCTOR DEVICE STRUCTURES INCLUDING STAIRCASE STRUCTURES, AND RELATED METHODS
A semiconductor device structure comprises stacked tiers each comprising at least one conductive structure and at least one insulating structure longitudinally...
2019/0139976 SEMICONDUCTOR MEMORY DEVICE
A semiconductor memory device includes a peripheral circuit region including a first substrate, a peripheral circuit element disposed at least partially over...
2019/0139975 ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME
Provided is an electronic device including a semiconductor memory. The semiconductor memory may include: a first channel layer formed over a substrate and...
2019/0139974 THREE-DIMENSIONAL MEMORY DEVICE HAVING LEVEL-SHIFTED STAIRCASES AND METHOD OF MAKING THEREOF
A plurality of horizontal top surfaces that are vertically offset is formed on a substrate. An alternating stack of insulating layers and spacer material...
2019/0139973 THREE-DIMENSIONAL MEMORY DEVICE WITH ANNULAR BLOCKING DIELECTRICS AND METHOD OF MAKING THEREOF
A memory opening is formed through an alternating stack of insulating layers and sacrificial material layers located over a substrate. Annular recesses are...
2019/0139972 SEMICONDUCTOR MEMORY DEVICE INCLUDING A SUBSTRATE, VARIOUS INTERCONNECTIONS, SEMICONDUCTOR MEMBER, CHARGE...
According to one embodiment, a semiconductor memory device includes: a substrate; a first interconnect; a second interconnect; a plurality of third...
2019/0139971 METHOD FOR FORMING A SEMICONDUCTOR DEVICE
A method for forming a semiconductor device is provided, including providing a substrate having a first area comprising first semiconductor structures and a...
2019/0139970 SEMICONDUCTOR STRUCTURE
Semiconductor structures and fabrication methods thereof are provided. An exemplary fabrication method includes providing a base substrate having an N-type...
2019/0139969 Cutting Metal Gates in Fin Field Effect Transistors
A method includes providing metal gate structures in a first and a second region, respectively, of a semiconductor substrate, simultaneously cutting the metal...
2019/0139968 VERTICAL MEMORY DEVICE INCLUDING SUBSTRATE CONTROL CIRCUIT AND MEMORY SYSTEM INCLUDING THE SAME
A nonvolatile memory device comprises a first semiconductor layer including, an upper substrate, and a memory cell array in which a plurality of word lines on...
2019/0139967 NOVEL SIX-TRANSISTOR (6T) SRAM CELL STRUCTURE
One illustrative 6T SRAM cell structure disclosed herein includes a first active region with a first N-type pass gate transistor, a first N-type pull-down...
2019/0139966 STATIC RANDOM ACCESS MEMORY DEVICE WITH HALO REGIONS HAVING DIFFERENT IMPURITY CONCENTRATIONS
In a region just below an access gate electrode in an SRAM memory cell, a second halo region is formed adjacent to a source-drain region and a first halo...
2019/0139965 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
One method for manufacturing a semiconductor device includes: forming provisional active regions that are shaped such that active regions that are adjacent in...
2019/0139964 TECHNIQUES AND STRUCTURE FOR FORMING DYNAMIC RANDOM ACCESS DEVICE
A method may include providing a substrate, the substrate comprising a substrate base and a patterning stack, disposed on the substrate base. The substrate may...
2019/0139963 MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME
A memory device includes cell transistors on active regions defined by a device isolation layer on a substrate such that each cell transistor has a buried cell...
2019/0139962 Compact Semiconductor Memory Device Having Reduced Number of Contacts, Methods of Operating and Methods of Making
An integrated circuit including a link or string of semiconductor memory cells, wherein each memory cell includes a floating body region for storing data. The...
2019/0139961 MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
A memory device and a method for manufacturing the memory device are provided. The memory device includes two first gate structures and a multilayer insulating...
2019/0139960 Memory Cell, An Array Of Memory Cells Individually Comprising A Capacitor And A Transistor With The Array...
A method of forming an array of capacitors and access transistors there-above comprises forming access transistor trenches partially into insulative material....
2019/0139959 MANUFACTURING METHOD OF MAGNETIC RANDOM ACCESS MEMORY CELL
A manufacturing method of a magnetic random access memory (MRAM) cell includes the following steps. A magnetic tunnel junction (MTJ) film stack is formed on an...
2019/0139958 SEMICONDUCTOR DEVICE
The semiconductor device includes a first inserter and a second inverter which is connected thereto in series. Each of the first and the second inserters...
2019/0139957 SELF-ALIGNED GATE EDGE TRIGATE AND FINFET DEVICES
Self-aligned gate edge trigate and finFET devices and methods of fabricating self-aligned gate edge trigate and finFET devices are described. In an example, a...
2019/0139956 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes a semiconductor substrate having a first region and a second region, insulators, gate stacks, and first and second S/Ds. The...
2019/0139955 SEMICONDUCTOR DEVICE
A semiconductor device includes a substrate, a fin structure protruding from the substrate in a direction perpendicular to an upper surface of the substrate,...
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