Semiconductor device with bipolar transistor and method of fabricating the
Disclosed is a semiconductor device with a bipolar transistor and method of fabricating the same. The device may include a collector region in a semiconductor...
Method of manufacturing semiconductor device
A method of manufacturing a semiconductor device includes forming a gate insulating film over a semiconductor substrate, forming a silicon film over the gate...
Semiconductor device, method of manufacturing the same, and method of
evaluating semiconductor device
A semiconductor device has: a silicon (semiconductor) substrate; a gate insulating film and a gate electrode, which are formed on the silicon substrate in this...
Transistor having V-shaped embedded stressor
A semiconductor device and a method of making the device are provided. The method can include forming a gate conductor overlying a major surface of a...
Asymmetric epitaxy and application thereof
The present invention provides a method of forming asymmetric field-effect-transistors. The method includes forming a gate structure on top of a semiconductor...
Semiconductor device and method of manufacturing same
A semiconductor device and related method of manufacture are disclosed. The semiconductor device comprises a gate electrode formed on a semiconductor substrate,...
Method of manufacturing semiconductor device
A semiconductor substrate made of a semiconductor material is prepared, and a hetero semiconductor region is formed on the semiconductor substrate to form a...
Vertical field-effect transistor
A method produces a vertical field-effect transistor having a semiconductor layer, in which a doped channel region is arranged along a depression. A "buried"...
Trench device structure and fabrication
A vertical-current-flow device includes a trench which includes an insulated gate and which extends down into first-conductivity-type semiconductor material. A...
Method of fabricating a semiconductor device with a channel formed in a
In a method of fabricating a semiconductor device on a substrate which includes a plurality of pillar patterns, an impurity region between adjacent pillar...
Anisotropic stress generation by stress-generating liners having a
A protruding structure having a linear edge is formed on a substrate. The protruding structure may be a gate line of a field effect transistor. A ...
Methods for forming rhodium-based charge traps and apparatus including
rhodium-based charge traps
Isolated conductive nanoparticles on a dielectric layer and methods of fabricating such isolated conductive nanoparticles provide charge traps in electronic...
Floating gate structures
Floating gate structures are generally described. In one example, an electronic device includes a semiconductor substrate, a tunnel dielectric coupled with the...
Transistor constructions and processing methods
A transistor construction includes a first floating gate having a first conductive or semiconductive surface and a second floating gate having a second...
Method for fabricating storage node electrode in semiconductor device
A method for fabricating a storage node electrode in a semiconductor device includes: performing a primary high density plasma (HDP) process to form a first HDP...
Electronic devices using carbon nanotubes having vertical structure and
the manufacturing method thereof
Provided are an electronic device to which vertical carbon nanotubes (CNTs) are applied and a method of manufacturing the same. The method of manufacturing an...
Method of forming a film containing dysprosium oxide and hafnium oxide
using atomic layer deposition
The use of atomic layer deposition (ALD) to form a dielectric layer of hafnium oxide (HfO.sub.2) doped with dysprosium (Dy) and a method of fabricating such a...
DRAM cell transistor device and method
A method for forming a memory device. The method provides a protective layer overlying a surface region of a substrate before threshold voltage implant. The...
Manufacturing method of semiconductor device
A manufacturing method of a semiconductor device is provided for improving the reliability of a semiconductor device including a MISFET with a high dielectric...
Structure and method for latchup improvement using through wafer via
latchup guard ring
A method and structure for preventing latchup. The structure includes a latchup sensitive structure and a through wafer via structure bounding the latch-up...
Method for manufacturing dual gate in semiconductor device
Provided is a method for manufacturing a dual gate in a semiconductor device. The method includes forming a gate insulating layer and a gate conductive layer on...
Dielectric interface for group III-V semiconductor device
A Group III-V Semiconductor device and method of fabrication is described. A high-k dielectric is interfaced to a confinement region by a chalcogenide region.
Method of fabricating semiconductor device
A method of fabricating a semiconductor device in which a plurality of conductive lines having a fine pitch and a uniform thickness can be formed is provided....
Compound semiconductor device and method for fabricating the same
The compound semiconductor device comprises an i-GaN buffer layer 12 formed on an SiC substrate 10; an n-AlGaN electron supplying layer 16 formed on the i-GaN...
Integrated structure with transistors and Schottky diodes and process for
fabricating the same
A process for fabricating an integrated group III nitride structure comprising high electron mobility transistors (HEMTs) and Schottky diodes, and the resulting...
Thin film transistor, manufacturing method thereof, display device, and
manufacturing method thereof
A light-blocking layer is formed using a first resist mask, and a base film is formed over the light-blocking layer. A first conductive film, a first insulating...
Display device having oxide thin film transistor and fabrication method
A display device including an oxide thin film transistor (TFT) is disclosed. A nitride-based gate insulating layer of a gate pad area is etched when an oxide...
Semiconductor substrate and manufacturing method of semiconductor device
To provide a semiconductor substrate including a crystalline semiconductor layer which is suitable for practical use, even if a material different from that of...
Composition of carbon nitride, thin film transistor with the composition
of carbon nitride, display device with...
A conventional composition of carbon nitride has a deposition method and properties limited. In the case of using the composition of carbon nitride as a...
Method for fabricating an LCD device
A method for fabricating an LCD device is disclosed, in which a reliable thin film pattern is formed as process deviation is minimized. The method includes...
Semiconductor device and method of forming three-dimensional vertically
oriented integrated capacitors
A semiconductor device is made by forming a plurality of conductive pillars vertically over a temporary carrier. A conformal insulating layer is formed over the...
Semiconductor package with penetrable encapsulant joining semiconductor
die and method thereof
A semiconductor device is made by mounting a first semiconductor die to a first substrate, forming a first encapsulant over the first semiconductor die, and...
Small form factor molded memory card and a method thereof
A shape-molding structure of a memory card comprises a circuit substrate, at least one chip, and an encapsulant covering. The upper and lower surfaces of the...
Manufacturing method of semiconductor device and manufacturing method of
Improvement in the reliability of a semiconductor device is aimed at. By heating a lead frame, after preparing a lead frame with a tape, until a resin molding...
Methods for separating individual semiconductor devices from a carrier
A wafer of integrated circuits may be bonded to a carrier wafer using a layer of bonding material. The thickness of the wafer of integrated circuits may then be...
Process for making a semiconductor system having devices that have
contacts on top and bottom surfaces of each...
Multiple devices, including a first device and a second device, have operational circuitry and opposing first and second surfaces. First and second electrical...
Warpage resistant semiconductor package and method for manufacturing the
A semiconductor package and a method for manufacturing the same is provided for minimizing or preventing warpage and twisting of semiconductor chip bodies as a...
Method for manufacturing a micromechanical chip and a component having a
chip of this type
In a method for manufacturing a micromechanical chip, a sacrificial layer and an epitaxy layer are initially applied to a semiconductor substrate to produce a...
Method of sealing a cavity
Embodiments disclosed herein generally include methods of sealing a cavity in a device structure. The cavity may be opened by etching away sacrificial material...
Fabricating a gallium nitride device with a diamond layer
In one aspect, a method includes fabricating a device. The device includes a gallium nitride (GaN) layer, a diamond layer disposed on the GaN layer and a gate...
Method of selectively forming atomically flat plane on diamond surface,
diamond substrate produced by the...
The present invention provides a method of selectively forming a flat plane on an atomic level on a diamond (001), (110) or (111) surface. A method of...
Methods of manufacturing phase-changeable memory devices including upper
and lower electrodes
A phase-changeable memory device includes a substrate having a contact region on an upper surface thereof. An insulating interlayer on the substrate has an...
Apatite-containing film having photocatalytic activity and a process for
An apatite-containing film having photocatalytic activity is produced by a process comprising the steps of preparing a liquid mixture comprising a Ca-containing...
Polysilazane, method of synthesizing polysilazane, composition for
manufacturing semiconductor device, and...
Disclosed are polysilazane, a method of synthesizing the polysilazane, a composition for manufacturing a semiconductor device, and a method of manufacturing a...
Method for manufacturing CIS-based thin film solar cell
In order to manufacture a CIS-based thin film solar cell that can achieve high photoelectric conversion efficiency by adding an alkali element to a light...
A method of forming an optical device comprising the steps of: providing a substrate comprising a first electrode capable of injecting or accepting charge...
Method for fabricating color filter using surface plasmon and method for
fabricating liquid crystal display device
Discussed are methods for fabricating a color filter using a surface plasmon and a liquid crystal display (LCD) device capable of enhancing a transmittance...
Method of forming mask for lithography, method of forming mask data for
lithography, method of manufacturing...
A method of forming a mask for lithography includes the step of forming the mask by using reverse data in which positions of at least part of output terminals...
Method for fabricating pixel cell of CMOS image sensor
The present invention provides a method for fabricating a pixel cell of CMOS image sensor, comprising: preparing a semiconductor substrate divided into region I...
Variable resistance memory device having reduced bottom contact area and
method of forming the same
A variable resistance memory element and method of forming the same. The memory element includes a substrate supporting a bottom electrode having a small bottom...