Patents

Searching:





Search by keyword, patent number, inventor, assignee, city or state:




Patent # Description
US-7,989,301 Semiconductor device with bipolar transistor and method of fabricating the same
Disclosed is a semiconductor device with a bipolar transistor and method of fabricating the same. The device may include a collector region in a semiconductor...
US-7,989,300 Method of manufacturing semiconductor device
A method of manufacturing a semiconductor device includes forming a gate insulating film over a semiconductor substrate, forming a silicon film over the gate...
US-7,989,299 Semiconductor device, method of manufacturing the same, and method of evaluating semiconductor device
A semiconductor device has: a silicon (semiconductor) substrate; a gate insulating film and a gate electrode, which are formed on the silicon substrate in this...
US-7,989,298 Transistor having V-shaped embedded stressor
A semiconductor device and a method of making the device are provided. The method can include forming a gate conductor overlying a major surface of a...
US-7,989,297 Asymmetric epitaxy and application thereof
The present invention provides a method of forming asymmetric field-effect-transistors. The method includes forming a gate structure on top of a semiconductor...
US-7,989,296 Semiconductor device and method of manufacturing same
A semiconductor device and related method of manufacture are disclosed. The semiconductor device comprises a gate electrode formed on a semiconductor substrate,...
US-7,989,295 Method of manufacturing semiconductor device
A semiconductor substrate made of a semiconductor material is prepared, and a hetero semiconductor region is formed on the semiconductor substrate to form a...
US-7,989,294 Vertical field-effect transistor
A method produces a vertical field-effect transistor having a semiconductor layer, in which a doped channel region is arranged along a depression. A "buried"...
US-7,989,293 Trench device structure and fabrication
A vertical-current-flow device includes a trench which includes an insulated gate and which extends down into first-conductivity-type semiconductor material. A...
US-7,989,292 Method of fabricating a semiconductor device with a channel formed in a vertical direction
In a method of fabricating a semiconductor device on a substrate which includes a plurality of pillar patterns, an impurity region between adjacent pillar...
US-7,989,291 Anisotropic stress generation by stress-generating liners having a sublithographic width
A protruding structure having a linear edge is formed on a substrate. The protruding structure may be a gate line of a field effect transistor. A ...
US-7,989,290 Methods for forming rhodium-based charge traps and apparatus including rhodium-based charge traps
Isolated conductive nanoparticles on a dielectric layer and methods of fabricating such isolated conductive nanoparticles provide charge traps in electronic...
US-7,989,289 Floating gate structures
Floating gate structures are generally described. In one example, an electronic device includes a semiconductor substrate, a tunnel dielectric coupled with the...
US-7,989,288 Transistor constructions and processing methods
A transistor construction includes a first floating gate having a first conductive or semiconductive surface and a second floating gate having a second...
US-7,989,287 Method for fabricating storage node electrode in semiconductor device
A method for fabricating a storage node electrode in a semiconductor device includes: performing a primary high density plasma (HDP) process to form a first HDP...
US-7,989,286 Electronic devices using carbon nanotubes having vertical structure and the manufacturing method thereof
Provided are an electronic device to which vertical carbon nanotubes (CNTs) are applied and a method of manufacturing the same. The method of manufacturing an...
US-7,989,285 Method of forming a film containing dysprosium oxide and hafnium oxide using atomic layer deposition
The use of atomic layer deposition (ALD) to form a dielectric layer of hafnium oxide (HfO.sub.2) doped with dysprosium (Dy) and a method of fabricating such a...
US-7,989,284 DRAM cell transistor device and method
A method for forming a memory device. The method provides a protective layer overlying a surface region of a substrate before threshold voltage implant. The...
US-7,989,283 Manufacturing method of semiconductor device
A manufacturing method of a semiconductor device is provided for improving the reliability of a semiconductor device including a MISFET with a high dielectric...
US-7,989,282 Structure and method for latchup improvement using through wafer via latchup guard ring
A method and structure for preventing latchup. The structure includes a latchup sensitive structure and a through wafer via structure bounding the latch-up...
US-7,989,281 Method for manufacturing dual gate in semiconductor device
Provided is a method for manufacturing a dual gate in a semiconductor device. The method includes forming a gate insulating layer and a gate conductive layer on...
US-7,989,280 Dielectric interface for group III-V semiconductor device
A Group III-V Semiconductor device and method of fabrication is described. A high-k dielectric is interfaced to a confinement region by a chalcogenide region.
US-7,989,279 Method of fabricating semiconductor device
A method of fabricating a semiconductor device in which a plurality of conductive lines having a fine pitch and a uniform thickness can be formed is provided....
US-7,989,278 Compound semiconductor device and method for fabricating the same
The compound semiconductor device comprises an i-GaN buffer layer 12 formed on an SiC substrate 10; an n-AlGaN electron supplying layer 16 formed on the i-GaN...
US-7,989,277 Integrated structure with transistors and Schottky diodes and process for fabricating the same
A process for fabricating an integrated group III nitride structure comprising high electron mobility transistors (HEMTs) and Schottky diodes, and the resulting...
US-7,989,275 Thin film transistor, manufacturing method thereof, display device, and manufacturing method thereof
A light-blocking layer is formed using a first resist mask, and a base film is formed over the light-blocking layer. A first conductive film, a first insulating...
US-7,989,274 Display device having oxide thin film transistor and fabrication method thereof
A display device including an oxide thin film transistor (TFT) is disclosed. A nitride-based gate insulating layer of a gate pad area is etched when an oxide...
US-7,989,273 Semiconductor substrate and manufacturing method of semiconductor device
To provide a semiconductor substrate including a crystalline semiconductor layer which is suitable for practical use, even if a material different from that of...
US-7,989,272 Composition of carbon nitride, thin film transistor with the composition of carbon nitride, display device with...
A conventional composition of carbon nitride has a deposition method and properties limited. In the case of using the composition of carbon nitride as a...
US-7,989,271 Method for fabricating an LCD device
A method for fabricating an LCD device is disclosed, in which a reliable thin film pattern is formed as process deviation is minimized. The method includes...
US-7,989,270 Semiconductor device and method of forming three-dimensional vertically oriented integrated capacitors
A semiconductor device is made by forming a plurality of conductive pillars vertically over a temporary carrier. A conformal insulating layer is formed over the...
US-7,989,269 Semiconductor package with penetrable encapsulant joining semiconductor die and method thereof
A semiconductor device is made by mounting a first semiconductor die to a first substrate, forming a first encapsulant over the first semiconductor die, and...
US-7,989,268 Small form factor molded memory card and a method thereof
A shape-molding structure of a memory card comprises a circuit substrate, at least one chip, and an encapsulant covering. The upper and lower surfaces of the...
US-7,989,267 Manufacturing method of semiconductor device and manufacturing method of lead frame
Improvement in the reliability of a semiconductor device is aimed at. By heating a lead frame, after preparing a lead frame with a tape, until a resin molding...
US-7,989,266 Methods for separating individual semiconductor devices from a carrier
A wafer of integrated circuits may be bonded to a carrier wafer using a layer of bonding material. The thickness of the wafer of integrated circuits may then be...
US-7,989,265 Process for making a semiconductor system having devices that have contacts on top and bottom surfaces of each...
Multiple devices, including a first device and a second device, have operational circuitry and opposing first and second surfaces. First and second electrical...
US-7,989,264 Warpage resistant semiconductor package and method for manufacturing the same
A semiconductor package and a method for manufacturing the same is provided for minimizing or preventing warpage and twisting of semiconductor chip bodies as a...
US-7,989,263 Method for manufacturing a micromechanical chip and a component having a chip of this type
In a method for manufacturing a micromechanical chip, a sacrificial layer and an epitaxy layer are initially applied to a semiconductor substrate to produce a...
US-7,989,262 Method of sealing a cavity
Embodiments disclosed herein generally include methods of sealing a cavity in a device structure. The cavity may be opened by etching away sacrificial material...
US-7,989,261 Fabricating a gallium nitride device with a diamond layer
In one aspect, a method includes fabricating a device. The device includes a gallium nitride (GaN) layer, a diamond layer disposed on the GaN layer and a gate...
US-7,989,260 Method of selectively forming atomically flat plane on diamond surface, diamond substrate produced by the...
The present invention provides a method of selectively forming a flat plane on an atomic level on a diamond (001), (110) or (111) surface. A method of...
US-7,989,259 Methods of manufacturing phase-changeable memory devices including upper and lower electrodes
A phase-changeable memory device includes a substrate having a contact region on an upper surface thereof. An insulating interlayer on the substrate has an...
US-7,989,258 Apatite-containing film having photocatalytic activity and a process for producing it
An apatite-containing film having photocatalytic activity is produced by a process comprising the steps of preparing a liquid mixture comprising a Ca-containing...
US-7,989,257 Polysilazane, method of synthesizing polysilazane, composition for manufacturing semiconductor device, and...
Disclosed are polysilazane, a method of synthesizing the polysilazane, a composition for manufacturing a semiconductor device, and a method of manufacturing a...
US-7,989,256 Method for manufacturing CIS-based thin film solar cell
In order to manufacture a CIS-based thin film solar cell that can achieve high photoelectric conversion efficiency by adding an alkali element to a light...
US-7,989,255 Optical device
A method of forming an optical device comprising the steps of: providing a substrate comprising a first electrode capable of injecting or accepting charge...
US-7,989,254 Method for fabricating color filter using surface plasmon and method for fabricating liquid crystal display device
Discussed are methods for fabricating a color filter using a surface plasmon and a liquid crystal display (LCD) device capable of enhancing a transmittance...
US-7,989,253 Method of forming mask for lithography, method of forming mask data for lithography, method of manufacturing...
A method of forming a mask for lithography includes the step of forming the mask by using reverse data in which positions of at least part of output terminals...
US-7,989,252 Method for fabricating pixel cell of CMOS image sensor
The present invention provides a method for fabricating a pixel cell of CMOS image sensor, comprising: preparing a semiconductor substrate divided into region I...
US-7,989,251 Variable resistance memory device having reduced bottom contact area and method of forming the same
A variable resistance memory element and method of forming the same. The memory element includes a substrate supporting a bottom electrode having a small bottom...
← Previous | 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 | Next →