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Patent # Description
US-7,994,607 Semiconductor device and manufacturing method thereof
It is an object of the present invention to provide a semiconductor device mounted with a memory which can be driven in the ranges of a current value and a...
US-7,994,606 De-coupling capacitors produced by utilizing dummy conductive structures integrated circuits
A de-coupling capacitor module using dummy conductive elements in an integrated circuit is disclosed. The de-coupling module comprises at least one circuit...
US-7,994,605 Isolation structure for semiconductor integrated circuit substrate
Isolation regions for semiconductor substrates include dielectric-filled trenches and field oxide regions. Protective caps of dielectric materials dissimilar...
US-7,994,604 Using floating fill metal to reduce power use for proximity communication
One embodiment of the present invention provides a system that facilitates reducing the power needed for proximity communication. This system includes an...
US-7,994,603 Semiconductor device and a method of manufacturing the same
Disclosed herein is a semiconductor device, including: a first group of transistors formed on a semiconductor substrate; and a second group of transistors...
US-7,994,602 Titanium dioxide thin film systems
A thin-film metal-oxide compound includes a titanium dioxide layer having a thickness of about 100 to 1000 nanometers. The titanium dioxide layer has a...
US-7,994,601 Semiconductor light receiving device
The present invention provides a semiconductor light receiving device that prevents local heat generation, has high-speed, high-sensitivity characteristics even...
US-7,994,600 Antireflective coating
Device and method for an antireflective coating to improve image quality in an image display system. A preferred embodiment comprises a first high refractive...
US-7,994,599 Device for the detection of electromagnetic waves and method for producing such a device
Device for the detection of electromagnetic waves with a first plate that contains a membrane and a detector structure fixed at least partially to the...
US-7,994,598 Electronic assembly for image sensor device
An electronic assembly for an image sensor device is disclosed. The electronic assembly comprises a package module and a lens set mounted thereon. The package...
US-7,994,597 MRAM with coupling valve switching
The free layer in a magneto-resistive memory element is stabilized through being pinned by an antiferromagnetic layer. A control valve layer provides exchange...
US-7,994,596 Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy
An MTJ memory cell and/or an array of such cells is provided wherein each such cell has a small circular horizontal cross-section of 1.0 microns or less in...
US-7,994,595 Strained semiconductor by full wafer bonding
One aspect of this disclosure relates to a method for forming a wafer with a strained semiconductor. In various embodiments of the method, a predetermined...
US-7,994,594 Electronic device, resonator, oscillator and method for manufacturing electronic device
An electronic device includes a substrate, a functional structural body formed on the substrate and a covering structure for defining a cavity part having the...
US-7,994,593 Quantum wire sensor and methods of forming and using same
A solid-state field-effect transistor device for detecting chemical and biological species and for detecting changes in radiation is disclosed. The device...
US-7,994,592 Method for integrating micro and nanoparticles into MEMS and apparatus including the same
MEMs devices are integrally fabricated with included micro or nanoparticles by providing a mixture of a sacrificial material and a multiplicity of particles,...
US-7,994,591 Semiconductor device and method for manufacturing the same
Disclosed are a semiconductor device and a method for manufacturing the same. The semiconductor device includes a gate structure which includes a silicon...
US-7,994,590 High dielectric constant insulators and associated fabrication methods
High-dielectric-constant (k) materials and electrical devices implementing the high-k materials are provided herein. According to some embodiments, an...
US-7,994,589 Semiconductor device and method for fabricating the same
A seal ring structure is formed through a multilayer structure of a plurality of dielectric films in a peripheral part of a chip region to surround the chip...
US-7,994,588 Inverted nonvolatile memory device, stack module, and method of fabricating the same
Example embodiments provide a nonvolatile memory device that may be integrated through stacking, a stack module, and a method of fabricating the nonvolatile...
US-7,994,587 Semiconductor device and semiconductor device manufacturing method
A semiconductor device includes a plurality of first MOS transistors has a first gate electrode formed on a first gate insulating film provided on a...
US-7,994,586 Semiconductor device and manufacturing method of the same
In a p-type MOS transistor, a gate electrode is partially removed by a predetermined wet etching, so that an upper portion of the gate electrode is formed to be...
US-7,994,585 Semiconductor device and method for manufacturing the same
A semiconductor device according to the present invention includes: a semiconductor layer; an element separating portion, formed in a top layer portion of the...
US-7,994,584 Semiconductor device having non-silicide region in which no silicide is formed on diffusion layer
A semiconductor device includes first and second MOSFETs corresponding to at least first power source voltage and second power source voltage lower than the...
US-7,994,583 Semiconductor device including n-type and p-type FinFET's constituting an inverter structure
A semiconductor device according to an aspect of the invention comprises an n-type FinFET which is provided on a semiconductor substrate and which includes a...
US-7,994,582 Stacked load-less static random access memory device
In a stacked load-less static random access memory (SRAM) device in which a pair of transmission transistors is stacked on a pair of driving transistors, the...
US-7,994,581 CMOS transistor and method of manufacturing the same
In a complementary metal-oxide semiconductor (CMOS) transistor and a method of manufacturing the same, a semiconductor channel material having a first...
US-7,994,580 High voltage transistor with improved driving current
A semiconductor device and its method of manufacture are provided. Embodiments include forming a first doped region and a second doped region. The first and...
US-7,994,579 Thin film field-effect transistor and display using the same
The present invention provides a thin film field-effect transistor comprising a substrate having thereon at least a gate electrode, a gate insulating film, an...
US-7,994,578 ESD protection for bipolar-CMOS-DMOS integrated circuit devices
An Electro-Static Discharge (ESD) protection device is formed in an isolated region of a semiconductor substrate. The ESD protection device may be in the form...
US-7,994,577 ESD protection structures on SOI substrates
An electrostatic discharge (ESD) protection circuit includes a buried oxide layer; a semiconductor layer on the buried oxide layer; and a first and a second MOS...
US-7,994,576 Metal gate transistor and resistor and method for fabricating the same
A method for fabricating metal gate transistor and resistor is disclosed. The method includes the steps of: providing a substrate having a transistor region and...
US-7,994,575 Metal-oxide-semiconductor device structures with tailored dopant depth profiles
A method for fabricating a metal-oxide-semiconductor device structure. The method includes introducing a dopant species concurrently into a semiconductor active...
US-7,994,574 Semiconductor substrate, semiconductor device, and method for manufacturing the semiconductor device
A double-structure silicon on insulator (SOI) substrate with a silicon layer, an insulation film (silicon oxide film), a silicon layer, and an insulation film...
US-7,994,573 Structure and method for forming power devices with carbon-containing region
A field effect transistor (FET) includes body regions of a first conductivity type over a semiconductor region of a second conductivity type. The body regions...
US-7,994,572 MOSFET having recessed channel
A MOSFET having a recessed channel and a method of fabricating the same. The critical dimension (CD) of a recessed trench defining the recessed channel in a...
US-7,994,571 Semiconductor device
An inventive semiconductor device includes: a body region of a second conductivity type provided on the drift region of a first conductivity type in a...
US-7,994,570 Semiconductor device and method of manufacturing the same
A semiconductor device in which current flows in a vertical direction includes a structure that decreases resistance between a source electrode and a drain...
US-7,994,569 Semiconductor device and method for forming the same
A bipolar high voltage/power semiconductor device having a low voltage terminal and a high voltage terminal is disclosed. The bipolar high voltage/power...
US-7,994,568 Vertical transistor of semiconductor device and method for forming the same
A vertical transistor of a semiconductor device and a method for forming the same are disclosed. The vertical transistor comprises a silicon fin disposed on a...
US-7,994,567 Semiconductor device and a method of manufacturing the same
To reduce the size and improve the power added efficiency of an RF power module having an amplifier element composed of a silicon power MOSFET, the on...
US-7,994,566 Stacked non-volatile memory with silicon carbide-based amorphous silicon finFETs
A stacked non-volatile memory device uses amorphous silicon based thin film transistors stacked vertically. Each layer of transistors or cells is formed from a...
US-7,994,565 Non-volatile storage having a connected source and well
A non-volatile storage device is disclosed that includes a set of connected non-volatile storage elements formed on a well, a bit line contact positioned in the...
US-7,994,564 Non-volatile memory cells formed in back-end-of line processes
An integrated circuit device includes a substrate; a bottom electrode over the substrate wherein the bottom electrode is in or over a lowest metallization layer...
US-7,994,563 MOS varactors with large tuning range
A device is presented. The device includes a substrate with a first well of a first polarity type. The first well defines a varactor region and comprises a...
US-7,994,562 Memory apparatus
The memory apparatus includes a memory device including a gate insulating layer formed on a silicon substrate by sequentially stacking a tunnel oxide layer, a...
US-7,994,561 Semiconductor device for preventing the leaning of storage nodes
A semiconductor device for preventing the leaning of storage nodes and a method of manufacturing the same is described. The semiconductor device includes...
US-7,994,560 Integrated circuit comprising a transistor and a capacitor, and fabrication method
An integrated circuit includes a substrate and at least one active region. A transistor produced in the active region separated from the substrate. This...
US-7,994,559 Recessed-gate transistor device having a dielectric layer with multi thicknesses and method of making the same
A recessed-gate transistor device includes a gate electrode embedded in a gate trench formed in a semiconductor substrate, wherein the gate trench includes a...
US-7,994,558 Method for forming barrier metal layer of bit line in semiconductor memory device
A semiconductor memory device includes a titanium layer and a titanium nitride layer formed on a substrate, a thin layer formed on the titanium nitride layer,...
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