Patents

Searching:





Search by keyword, patent number, inventor, assignee, city or state:




Patent # Description
US-8,012,902 Partially deactivated metal catalysts and methods for preparing the same
Disclosed are partially deactivated metal catalysts useful for modifying structures of nanomaterials. The present invention is also directed to a method for...
US-8,012,901 Method of synthesizing enantiopure mexiletine analogues and novel .beta.-thiophenoxy and pyridyl ethers
A practical and efficient procedure for the enantioselective synthesis of mexiletine analogues using 10% of a novel spiroborate ester as chirality transfer...
US-8,012,900 Nano-linked metallocene catalyst compositions and their polymer products
The present invention provides polymerization catalyst compositions employing novel dinuclear metallocene compounds. Methods for making these new dinuclear...
US-8,012,899 Recycling of ionic liquid catalyst
Provided is a process for safely transporting or recycling an ionic liquid catalyst based on chloroaluminates. The process comprises mixing a secondary alcohol...
US-8,012,898 Ceramic with improved high temperature electrical properties for use as a spark plug insulator
An insulator including alumina in an amount between about 90 and about 99% by weight and an oxide mixture or glass mixture including Boron Oxide, Phosphorus...
US-8,012,897 Alumina ceramic products
The invention provides a sintered, yttria stabilized zirconium-toughened alumina ceramic product comprising about 80-94 w/w % Al.sub.2O.sub.3, about 5-19 w/w %...
US-8,012,896 Optical glass, preform for precision press molding, method for manufacturing preform for precision press...
The present invention relates to an optical glass having optical constants in the form of a refractive index nd of 1.70 or higher and an Abbe number nud of 50...
US-8,012,895 Sealing material for solid oxide fuel cells
A sealing material for solid oxide fuel cells is provided, which is composed of around 60% to 80% by weight of glass, around 20% to 30% by weight of alcohol,...
US-8,012,894 Glasses having low OH, OD levels
A fused silica glass and a fused silica article having a combined concentration of at least one of OH and OD of up to about 50 ppm. The fused silica glass is...
US-8,012,893 Stretchable applique
An applique is described that includes a woven fabric that is stretchable in a single direction.
US-8,012,892 Composite resin molded product and method for molding the same
A composite resin molded product has a molded product body made of a resin and a fiber sheet material inserted on the surface of the molded product body. The...
US-8,012,891 Flame resistant fabrics and process for making
A process for imparting flame resistance and the flame resistant fabrics produced by such process are provided. The process for imparting flame resistant...
US-8,012,890 Flame resistant fabrics having a high synthetic content and process for making
Provided herein are flame resistant fabrics having a thermoplastic fiber content of as much as 65% (where no more than 5% of the fibers are non-thermoplastic...
US-8,012,889 Fire retardant panel composition and methods of making the same
The following disclosure provides a low-density fire retardant structural board. The board has a body of fibrous material, a binder and fire retardant agent....
US-8,012,888 Substrate processing apparatus and semiconductor device manufacturing method
Provided is a substrate processing apparatus comprising: a process chamber for processing a substrate; a heater for heating an interior of the process chamber;...
US-8,012,887 Precursor addition to silicon oxide CVD for improved low temperature gapfill
Methods of depositing silicon oxide layers on substrates involve flowing a silicon-containing precursor, an oxidizing gas, water and an additive precursor into...
US-8,012,886 Leadframe treatment for enhancing adhesion of encapsulant thereto
A method is provided for treating a leadframe comprising copper or copper alloy to enhance adhesion of molding compound to it. The leadframe is oxidized in an...
US-8,012,885 Manufacturing method of semiconductor device
To provide a manufacturing method of a semiconductor device capable of performing a selective growth at a low temperature. A manufacturing method of a...
US-8,012,884 Semiconductor device manufacturing method and semiconductor device manufacturing apparatus
A predicted film formation rate value is computed based on a film formation rate prediction formula obtained in advance and apparatus parameters obtained during...
US-8,012,883 Stripping method
Methods are provided for manufacturing optical display devices which remove an etch resist and residual post-etch metal in a single step. These methods are...
US-8,012,882 Method of manufacturing nitride substrate for semiconductors
In an independent GaN film manufactured by creating a GaN layer on a base heterosubstrate using vapor-phase deposition and then removing the base substrate,...
US-8,012,881 Method for forming contact holes in semiconductor device
A method for forming contact holes in a semiconductor device includes forming a hard mask layer over an etch target layer, forming a first line pattern in the...
US-8,012,880 Method of manufacturing semiconductor device
The present invention relates to a method of manufacturing a semiconductor device using a substrate including an organic low dielectric constant film containing...
US-8,012,879 Etching method using an at least semi-solid media
An etching method that uses an etch reactant retained within at least a semi-solid media (120, 220, 224, 230). The etch reactant media is applied to selectively...
US-8,012,878 Atomic layer volatilization process for metal layers
A two-stage method to remove a metal layer from a substrate surface comprises using a CMP process to remove a first portion of the metal layer from the...
US-8,012,877 Backside nitride removal to reduce streak defects
Exemplary embodiments provide a method for fabricating an integrated circuit (IC) device with reduced streak defects. In one embodiment, the IC device structure...
US-8,012,876 Delivery of vapor precursor from solid source
A method is disclosed that uses solid precursors for semiconductor processing. A solid precursor is provided in a storage container. The solid precursor is...
US-8,012,875 Method and apparatus for workpiece surface modification for selective material deposition
In some embodiments, a workpiece-surface-influencing device preferentially contacts the top surface of the workpiece, to chemically modify the surface at...
US-8,012,874 Semiconductor chip substrate with multi-capacitor footprint
Various methods and apparatus for coupling capacitors to a chip substrate are disclosed. In one aspect, a method of manufacturing is provided that includes...
US-8,012,873 Method for providing temperature uniformity of rapid thermal annealing
A method for annealing a semiconductor device having at least one polysilicon region formed on a substrate, comprises growing dielectric material on the...
US-8,012,872 Planarising damascene structures
Manufacturing a damascene structure involves: forming a sacrificial layer (20) on a substrate (10) to protect an area around a recess (30) for the damascene...
US-8,012,871 Semiconductor device and manufacturing method thereof
A semiconductor device and a manufacturing method thereof are provided for the improvement of the reliability of copper damascene wiring in which a film between...
US-8,012,870 Wiring structure between steps and wiring method thereof
In a wiring structure between steps in which a step portion is covered by an insulating slope formed by providing and drying droplets of an insulating ink in...
US-8,012,869 Bonded structure and bonding method
An aluminum wire is bonded to a silicon electrode by a wedge tool pressing the aluminum wire against the silicon electrode. In this way, a firmly bonded...
US-8,012,868 Semiconductor device having EMI shielding and method therefor
A semiconductor device has a substrate having a plurality of metal layers. A die coupled to the substrate. A first wire fence structure is formed on the...
US-8,012,867 Wafer level chip scale package system
A wafer level chip scale package system is provided including placing a first integrated circuit over a semiconductor wafer having a second integrated circuit;...
US-8,012,866 Method of bonding semiconductor devices utilizing solder balls
A method for bonding a semiconductor device onto a substrate is provided which comprises the steps of picking up a solder ball with a pick head, placing the...
US-8,012,865 High temperature, stable SiC device interconnects and packages having low thermal resistance
A method of forming packages containing SiC or other semiconductor devices bonded to other components or conductive surfaces utilizing transient liquid phase...
US-8,012,864 Manufacturing method for interconnection having stress-absorbing layer between the semiconductor substrate and...
A semiconductor device includes: a semiconductor substrate including a first face and a second face on a side opposite to the first face; an external connection...
US-8,012,863 Transistors with gate stacks having metal electrodes
A transistor with a gate stack having a metal electrode and a method for forming the same. The method includes providing a structure which includes (a) a...
US-8,012,862 Method for manufacturing semiconductor device using plasma doping
A fin-shaped semiconductor region is formed on a substrate, and then the substrate is placed in a chamber. Then, an ignition gas is introduced into a chamber to...
US-8,012,861 Systems and methods for preparing epitaxially textured polycrystalline films
The disclosed subject matter relates to systems and methods for preparing epitaxially textured polycrystalline films. In one or more embodiments, the method for...
US-8,012,860 Atomic layer deposition for functionalizing colloidal and semiconductor particles
A method for producing a product of a functionalized nanocomposition colloidal material using atomic layer deposition to coat the colloidal material. The ALD...
US-8,012,859 Atomic layer deposition of silicon and silicon-containing films
A method is provided for depositing silicon and silicon-containing films by atomic layer deposition (ALD). The method includes disposing the substrate in a...
US-8,012,858 Method of fabricating semiconductor device
A method of fabricating a semiconductor device according to one embodiment includes: removing a native oxide film and adhering silicon nitrides on an area of a...
US-8,012,857 Semiconductor die singulation method
In one embodiment, semiconductor die are singulated from a semiconductor wafer by etching openings completely through the semiconductor wafer.
US-8,012,856 Method of producing semiconductor components
A method is provided for producing a semiconductor component (1) comprising at least one semiconductor body (2) and one connection carrier region (5). A...
US-8,012,855 Method and structure for fabricating multiple tiled regions onto a plate using a controlled cleaving process
A reusable transfer substrate member for forming a tiled substrate structure. The member including a transfer substrate, which has a surface region. The surface...
US-8,012,854 Semiconductor device and manufacturing method thereof
It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled...
US-8,012,852 Controlled process and resulting device
A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface...
← Previous | 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 | Next →