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| Patent # | Description |
|---|---|
| US-8,012,902 |
Partially deactivated metal catalysts and methods for preparing the same Disclosed are partially deactivated metal catalysts useful for modifying structures of nanomaterials. The present invention is also directed to a method for... |
| US-8,012,901 |
Method of synthesizing enantiopure mexiletine analogues and novel
.beta.-thiophenoxy and pyridyl ethers A practical and efficient procedure for the enantioselective synthesis of mexiletine analogues using 10% of a novel spiroborate ester as chirality transfer... |
| US-8,012,900 |
Nano-linked metallocene catalyst compositions and their polymer products The present invention provides polymerization catalyst compositions employing novel dinuclear metallocene compounds. Methods for making these new dinuclear... |
| US-8,012,899 |
Recycling of ionic liquid catalyst Provided is a process for safely transporting or recycling an ionic liquid catalyst based on chloroaluminates. The process comprises mixing a secondary alcohol... |
| US-8,012,898 |
Ceramic with improved high temperature electrical properties for use as a
spark plug insulator An insulator including alumina in an amount between about 90 and about 99% by weight and an oxide mixture or glass mixture including Boron Oxide, Phosphorus... |
| US-8,012,897 |
Alumina ceramic products The invention provides a sintered, yttria stabilized zirconium-toughened alumina ceramic product comprising about 80-94 w/w % Al.sub.2O.sub.3, about 5-19 w/w %... |
| US-8,012,896 |
Optical glass, preform for precision press molding, method for
manufacturing preform for precision press... The present invention relates to an optical glass having optical constants in the form of a refractive index nd of 1.70 or higher and an Abbe number nud of 50... |
| US-8,012,895 |
Sealing material for solid oxide fuel cells A sealing material for solid oxide fuel cells is provided, which is composed of around 60% to 80% by weight of glass, around 20% to 30% by weight of alcohol,... |
| US-8,012,894 |
Glasses having low OH, OD levels A fused silica glass and a fused silica article having a combined concentration of at least one of OH and OD of up to about 50 ppm. The fused silica glass is... |
| US-8,012,893 |
Stretchable applique An applique is described that includes a woven fabric that is stretchable in a single direction. |
| US-8,012,892 |
Composite resin molded product and method for molding the same A composite resin molded product has a molded product body made of a resin and a fiber sheet material inserted on the surface of the molded product body. The... |
| US-8,012,891 |
Flame resistant fabrics and process for making A process for imparting flame resistance and the flame resistant fabrics produced by such process are provided. The process for imparting flame resistant... |
| US-8,012,890 |
Flame resistant fabrics having a high synthetic content and process for
making Provided herein are flame resistant fabrics having a thermoplastic fiber content of as much as 65% (where no more than 5% of the fibers are non-thermoplastic... |
| US-8,012,889 |
Fire retardant panel composition and methods of making the same The following disclosure provides a low-density fire retardant structural board. The board has a body of fibrous material, a binder and fire retardant agent.... |
| US-8,012,888 |
Substrate processing apparatus and semiconductor device manufacturing
method Provided is a substrate processing apparatus comprising: a process chamber for processing a substrate; a heater for heating an interior of the process chamber;... |
| US-8,012,887 |
Precursor addition to silicon oxide CVD for improved low temperature
gapfill Methods of depositing silicon oxide layers on substrates involve flowing a silicon-containing precursor, an oxidizing gas, water and an additive precursor into... |
| US-8,012,886 |
Leadframe treatment for enhancing adhesion of encapsulant thereto A method is provided for treating a leadframe comprising copper or copper alloy to enhance adhesion of molding compound to it. The leadframe is oxidized in an... |
| US-8,012,885 |
Manufacturing method of semiconductor device To provide a manufacturing method of a semiconductor device capable of performing a selective growth at a low temperature. A manufacturing method of a... |
| US-8,012,884 |
Semiconductor device manufacturing method and semiconductor device
manufacturing apparatus A predicted film formation rate value is computed based on a film formation rate prediction formula obtained in advance and apparatus parameters obtained during... |
| US-8,012,883 |
Stripping method Methods are provided for manufacturing optical display devices which remove an etch resist and residual post-etch metal in a single step. These methods are... |
| US-8,012,882 |
Method of manufacturing nitride substrate for semiconductors In an independent GaN film manufactured by creating a GaN layer on a base heterosubstrate using vapor-phase deposition and then removing the base substrate,... |
| US-8,012,881 |
Method for forming contact holes in semiconductor device A method for forming contact holes in a semiconductor device includes forming a hard mask layer over an etch target layer, forming a first line pattern in the... |
| US-8,012,880 |
Method of manufacturing semiconductor device The present invention relates to a method of manufacturing a semiconductor device using a substrate including an organic low dielectric constant film containing... |
| US-8,012,879 |
Etching method using an at least semi-solid media An etching method that uses an etch reactant retained within at least a semi-solid media (120, 220, 224, 230). The etch reactant media is applied to selectively... |
| US-8,012,878 |
Atomic layer volatilization process for metal layers A two-stage method to remove a metal layer from a substrate surface comprises using a CMP process to remove a first portion of the metal layer from the... |
| US-8,012,877 |
Backside nitride removal to reduce streak defects Exemplary embodiments provide a method for fabricating an integrated circuit (IC) device with reduced streak defects. In one embodiment, the IC device structure... |
| US-8,012,876 |
Delivery of vapor precursor from solid source A method is disclosed that uses solid precursors for semiconductor processing. A solid precursor is provided in a storage container. The solid precursor is... |
| US-8,012,875 |
Method and apparatus for workpiece surface modification for selective
material deposition In some embodiments, a workpiece-surface-influencing device preferentially contacts the top surface of the workpiece, to chemically modify the surface at... |
| US-8,012,874 |
Semiconductor chip substrate with multi-capacitor footprint Various methods and apparatus for coupling capacitors to a chip substrate are disclosed. In one aspect, a method of manufacturing is provided that includes... |
| US-8,012,873 |
Method for providing temperature uniformity of rapid thermal annealing A method for annealing a semiconductor device having at least one polysilicon region formed on a substrate, comprises growing dielectric material on the... |
| US-8,012,872 |
Planarising damascene structures Manufacturing a damascene structure involves: forming a sacrificial layer (20) on a substrate (10) to protect an area around a recess (30) for the damascene... |
| US-8,012,871 |
Semiconductor device and manufacturing method thereof A semiconductor device and a manufacturing method thereof are provided for the improvement of the reliability of copper damascene wiring in which a film between... |
| US-8,012,870 |
Wiring structure between steps and wiring method thereof In a wiring structure between steps in which a step portion is covered by an insulating slope formed by providing and drying droplets of an insulating ink in... |
| US-8,012,869 |
Bonded structure and bonding method An aluminum wire is bonded to a silicon electrode by a wedge tool pressing the aluminum wire against the silicon electrode. In this way, a firmly bonded... |
| US-8,012,868 |
Semiconductor device having EMI shielding and method therefor A semiconductor device has a substrate having a plurality of metal layers. A die coupled to the substrate. A first wire fence structure is formed on the... |
| US-8,012,867 |
Wafer level chip scale package system A wafer level chip scale package system is provided including placing a first integrated circuit over a semiconductor wafer having a second integrated circuit;... |
| US-8,012,866 |
Method of bonding semiconductor devices utilizing solder balls A method for bonding a semiconductor device onto a substrate is provided which comprises the steps of picking up a solder ball with a pick head, placing the... |
| US-8,012,865 |
High temperature, stable SiC device interconnects and packages having low
thermal resistance A method of forming packages containing SiC or other semiconductor devices bonded to other components or conductive surfaces utilizing transient liquid phase... |
| US-8,012,864 |
Manufacturing method for interconnection having stress-absorbing layer
between the semiconductor substrate and... A semiconductor device includes: a semiconductor substrate including a first face and a second face on a side opposite to the first face; an external connection... |
| US-8,012,863 |
Transistors with gate stacks having metal electrodes A transistor with a gate stack having a metal electrode and a method for forming the same. The method includes providing a structure which includes (a) a... |
| US-8,012,862 |
Method for manufacturing semiconductor device using plasma doping A fin-shaped semiconductor region is formed on a substrate, and then the substrate is placed in a chamber. Then, an ignition gas is introduced into a chamber to... |
| US-8,012,861 |
Systems and methods for preparing epitaxially textured polycrystalline
films The disclosed subject matter relates to systems and methods for preparing epitaxially textured polycrystalline films. In one or more embodiments, the method for... |
| US-8,012,860 |
Atomic layer deposition for functionalizing colloidal and semiconductor
particles A method for producing a product of a functionalized nanocomposition colloidal material using atomic layer deposition to coat the colloidal material. The ALD... |
| US-8,012,859 |
Atomic layer deposition of silicon and silicon-containing films A method is provided for depositing silicon and silicon-containing films by atomic layer deposition (ALD). The method includes disposing the substrate in a... |
| US-8,012,858 |
Method of fabricating semiconductor device A method of fabricating a semiconductor device according to one embodiment includes: removing a native oxide film and adhering silicon nitrides on an area of a... |
| US-8,012,857 |
Semiconductor die singulation method In one embodiment, semiconductor die are singulated from a semiconductor wafer by etching openings completely through the semiconductor wafer. |
| US-8,012,856 |
Method of producing semiconductor components A method is provided for producing a semiconductor component (1) comprising at least one semiconductor body (2) and one connection carrier region (5). A... |
| US-8,012,855 |
Method and structure for fabricating multiple tiled regions onto a plate
using a controlled cleaving process A reusable transfer substrate member for forming a tiled substrate structure. The member including a transfer substrate, which has a surface region. The surface... |
| US-8,012,854 |
Semiconductor device and manufacturing method thereof It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled... |
| US-8,012,852 |
Controlled process and resulting device A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface... |
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