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Patent # Description
US-8,018,006 Semiconductor device having an enlarged space area surrounding an isolation trench for reducing thermal...
A semiconductor device includes a lower substrate, a thin semiconductor layer and an insulating layer formed between the lower substrate and the semiconductor...
US-8,018,005 CMOS (complementary metal oxide semiconductor) devices having metal gate NFETs and poly-silicon gate PFETs
A semiconductor structure. The semiconductor structure includes: a first semiconductor region and a second semiconductor region; a first gate dielectric region...
US-8,018,004 Semiconductor device and manufacturing method thereof
A semiconductor device comprises a first MIS transistor and a second MIS transistor. The first MIS transistor includes a first gate insulating film formed on a...
US-8,018,003 Leakage power reduction in CMOS circuits
A field effect transistor includes a source region and a drain region in contact with a channel region. The source and drain regions are formed in insulating...
US-8,018,002 Field effect resistor for ESD protection
An electrostatic discharge protection device and methodology are provided for protecting semiconductor devices against electrostatic discharge events by...
US-8,018,001 Semiconductor device
A breakdown voltage of a clamp diode can be reduced while a leakage current is suppressed. A P.sup.- type diffusion layer is formed in a surface of an N.sup.-...
US-8,018,000 Electrostatic discharge protection pattern for high voltage applications
Electrostatic discharge (ESD) protection in high voltage semiconductor devices is disclosed that provides enhanced current isolation between transistor drains...
US-8,017,999 Semiconductor device
An output side of a driver output circuit of an LCD driver includes a first protective element having an n-type semiconductor region and a p-type semiconductor...
US-8,017,998 Gettering contaminants for integrated circuits formed on a silicon-on-insulator structure
Gettering contaminants for formation of integrated circuits on a semiconductor-on-insulator structure is described. A semiconductor-on-insulator structure is...
US-8,017,997 Vertical metal-insulator-metal (MIM) capacitor using gate stack, gate spacer and contact via
A semiconductor structure including a vertical metal-insulator-metal capacitor, and a method for fabricating the semiconductor structure including the vertical...
US-8,017,996 Semiconductor device, and energy transmission device using the same
An energy transmission device includes: a semiconductor device formed on a first semiconductor substrate; a semiconductor integrated circuit including a reverse...
US-8,017,995 Deep trench semiconductor structure and method
An electrical structure and method of forming. The electrical structure includes a semiconductor substrate comprising a deep trench, an oxide liner layer is...
US-8,017,994 Nonvolatile semiconductor memory
A hot electron (BBHE) is generated close to a drain by tunneling between bands, and it data writing is performed by injecting the hot electron into a charge...
US-8,017,993 Nonvolatile semiconductor memory device and method for manufacturing same
A nonvolatile semiconductor memory device includes: a stacked body with a plurality of insulating films and electrode films alternately stacked therein, through...
US-8,017,992 Flash memory device and method of fabricating the same
Disclosed here in is a flash memory device and a method of fabricating the same. In accordance with one aspect of the invention, a flash memory device includes...
US-8,017,991 Non-volatile memory device and methods of operating and fabricating the same
Example embodiments provide a non-volatile memory device with increased integration and methods of operating and fabricating the same. A non-volatile memory...
US-8,017,990 Nonvolatile semiconductor memory device and method of fabricating the same
A nonvolatile semiconductor memory device includes a gate insulating film formed on a semiconductor substrate, a first gate electrode corresponding to a memory...
US-8,017,989 Nonvolatile semiconductor memory device and method of manufacturing the same
A nonvolatile semiconductor memory device including a semiconductor substrate having a semiconductor layer and an insulating material provided on a surface...
US-8,017,988 High density stepped, non-planar flash memory
A first plurality of memory cells is in a first plane in a first column of the array. A second plurality of memory cells is in a second plane in the same...
US-8,017,987 Semiconductor memory device and method for manufacturing the same
According to an aspect of the present invention, there is provided a semiconductor memory device including: a semiconductor substrate having: first device...
US-8,017,986 Semiconductor device
A semiconductor device includes a plurality of nonvolatile memory cells (1). Each of the nonvolatile memory cells comprises a MOS type first transistor section...
US-8,017,985 Concentric or nested container capacitor structure for integrated circuits
Disclosed are embodiments for a container capacitor structure in which at least two container capacitors, e.g., an inner and outer container capacitor, are made...
US-8,017,984 Solid-state imaging device
A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion...
US-8,017,983 Solid-state imaging device
In each photosensitive cell, a photodiode 101, a transfer gate 102, a floating diffusion layer section 103, an amplifier transistor 104, and a reset transistor...
US-8,017,982 Imagers with contact plugs extending through the substrates thereof and imager fabrication methods
Methods for fabricating photoimagers, such as complementary metal-oxide-semiconductor (CMOS) imagers, include fabricating image sensing elements, transistors,...
US-8,017,981 Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making
Wide bandgap semiconductor devices including normally-off VJFET integrated power switches are described. The power switches can be implemented monolithically or...
US-8,017,980 Liquid crystal display apparatus
An illumination apparatus includes a plurality of light emitting diode devices mounted therein and the light emitting diode device includes a substrate, a light...
US-8,017,979 Semiconductor device and method for manufacturing the same
It is made possible to restrict strain relaxation even if a strained semiconductor element is formed on a very small minute layer. A semiconductor device...
US-8,017,978 Hybrid semiconductor device
A hybrid device including a silicon based MOSFET operatively connected with a GaN based device.
US-8,017,977 Field effect transistor having recessed gate in compositional graded layer
A GaN heterojunction FET has an Al.sub.xGa.sub.1-xN first graded layer and an Al.sub.yGa.sub.1-yN second graded layer, which are formed sequentially on a...
US-8,017,976 Barrier for doped molybdenum targets
A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support...
US-8,017,975 Semiconductor device
A semiconductor device and manufacturing method satisfies both of the trade-off characteristic advantages of the HBT and the HFET. The semiconductor device is...
US-8,017,974 Semiconductor device with increased withstand voltage
A semiconductor device having the present high withstand voltage power device IGBT has at a back surface a p collector layer with boron injected in an amount of...
US-8,017,973 Nitride semiconductor light-emitting device including a buffer layer on a substrate and method for...
There are provided a nitride semiconductor light-emitting device and a method for manufacturing the same. The nitride semiconductor light-emitting device...
US-8,017,972 Multilayered white light emitting diode using quantum dots and method of fabricating the same
A multilayered white light emitting diode and a method of fabricating the same include forming a phosphor mixture layer including a green phosphor and a blue...
US-8,017,971 Light emitting diode light source
An LED light source includes an LED die and a transparent encapsulation. The LED die includes a die emitting surface. The transparent encapsulation includes a...
US-8,017,970 Semiconductor light-emitting element
A semiconductor light-emitting element includes, a first semiconductor layer, a second semiconductor layer, a light-emitting layer provided between the first...
US-8,017,969 LED chip package structure with high-efficiency light emission by rough surfaces and method of making the same
An LED chip package structure with high-efficiency light emission by rough surfaces includes a substrate unit, a light-emitting unit, and a package colloid...
US-8,017,968 Light-emitting diode chip package body and method for manufacturing same
A light-emitting diode chip package body with an excellent heat dissipation performance and a low manufacturing cost, and a packaging method of the same are...
US-8,017,967 Light-emitting element including a fusion-bonding portion on contact electrodes
A solid-state device having: a flip-chip mounted solid-state element; a power receiving/feeding portion having a mounting substrate to allow that a mounting...
US-8,017,966 Light-emitting module of vehicular lamp
A light-emitting module includes a semiconductor light-emitting element with a generally oblong shape, and a planar electrode formed on a surface of the...
US-8,017,965 Semiconductor light emitting device
A semiconductor light emitting device is provided. The semiconductor light emitting device includes a first conductive semiconductor layer; an active layer on...
US-8,017,964 Light emitting device
A light emitting device includes a light emitting element having at least two electrodes disposed at the side of the light output surface thereof; and a base...
US-8,017,963 Light emitting diode with a dielectric mirror having a lateral configuration
A light emitting diode is disclosed that includes an active structure, a first ohmic contact on the active structure, and a transparent conductive oxide layer...
US-8,017,962 Light-emitting diode apparatus and manufacturing method thereof
A light-emitting diode (LED) apparatus includes a thermoconductive substrate, a thermoconductive adhesive layer, an epitaxial layer, a current spreading layer...
US-8,017,961 Light emitting device and phosphor of alkaline earth sulfide therefor
The present invention relates to a light emitting device comprising a light emitting diode for emitting blue light or ultraviolet rays, and at least one...
US-8,017,960 Infrared emitting diode and method of its manufacture
An infrared emitting diode that can be utilized as a high power and rapidly responsive infrared light source for both infrared and remote control communications...
US-8,017,959 Light source and liquid crystal display device using the same
A widely applicable and low cost module substrate with a high accuracy, reliability and heat-radiation structure. A light source includes: a heat radiation...
US-8,017,958 P-contact layer for a III-P semiconductor light emitting device
A device includes a semiconductor structure with at least one III-P light emitting layer disposed between an n-type region and a p-type region. The ...
US-8,017,957 Semiconductor laser apparatus
A sub-substrate, a blue-violet semiconductor laser device, an insulating layer, and a red semiconductor laser device are stacked in order on a support member...
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