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| Patent # | Description |
|---|---|
| US-8,018,006 |
Semiconductor device having an enlarged space area surrounding an
isolation trench for reducing thermal... A semiconductor device includes a lower substrate, a thin semiconductor layer and an insulating layer formed between the lower substrate and the semiconductor... |
| US-8,018,005 |
CMOS (complementary metal oxide semiconductor) devices having metal gate
NFETs and poly-silicon gate PFETs A semiconductor structure. The semiconductor structure includes: a first semiconductor region and a second semiconductor region; a first gate dielectric region... |
| US-8,018,004 |
Semiconductor device and manufacturing method thereof A semiconductor device comprises a first MIS transistor and a second MIS transistor. The first MIS transistor includes a first gate insulating film formed on a... |
| US-8,018,003 |
Leakage power reduction in CMOS circuits A field effect transistor includes a source region and a drain region in contact with a channel region. The source and drain regions are formed in insulating... |
| US-8,018,002 |
Field effect resistor for ESD protection An electrostatic discharge protection device and methodology are provided for protecting semiconductor devices against electrostatic discharge events by... |
| US-8,018,001 |
Semiconductor device A breakdown voltage of a clamp diode can be reduced while a leakage current is suppressed. A P.sup.- type diffusion layer is formed in a surface of an N.sup.-... |
| US-8,018,000 |
Electrostatic discharge protection pattern for high voltage applications Electrostatic discharge (ESD) protection in high voltage semiconductor devices is disclosed that provides enhanced current isolation between transistor drains... |
| US-8,017,999 |
Semiconductor device An output side of a driver output circuit of an LCD driver includes a first protective element having an n-type semiconductor region and a p-type semiconductor... |
| US-8,017,998 |
Gettering contaminants for integrated circuits formed on a
silicon-on-insulator structure Gettering contaminants for formation of integrated circuits on a semiconductor-on-insulator structure is described. A semiconductor-on-insulator structure is... |
| US-8,017,997 |
Vertical metal-insulator-metal (MIM) capacitor using gate stack, gate
spacer and contact via A semiconductor structure including a vertical metal-insulator-metal capacitor, and a method for fabricating the semiconductor structure including the vertical... |
| US-8,017,996 |
Semiconductor device, and energy transmission device using the same An energy transmission device includes: a semiconductor device formed on a first semiconductor substrate; a semiconductor integrated circuit including a reverse... |
| US-8,017,995 |
Deep trench semiconductor structure and method An electrical structure and method of forming. The electrical structure includes a semiconductor substrate comprising a deep trench, an oxide liner layer is... |
| US-8,017,994 |
Nonvolatile semiconductor memory A hot electron (BBHE) is generated close to a drain by tunneling between bands, and it data writing is performed by injecting the hot electron into a charge... |
| US-8,017,993 |
Nonvolatile semiconductor memory device and method for manufacturing same A nonvolatile semiconductor memory device includes: a stacked body with a plurality of insulating films and electrode films alternately stacked therein, through... |
| US-8,017,992 |
Flash memory device and method of fabricating the same Disclosed here in is a flash memory device and a method of fabricating the same. In accordance with one aspect of the invention, a flash memory device includes... |
| US-8,017,991 |
Non-volatile memory device and methods of operating and fabricating the
same Example embodiments provide a non-volatile memory device with increased integration and methods of operating and fabricating the same. A non-volatile memory... |
| US-8,017,990 |
Nonvolatile semiconductor memory device and method of fabricating the same A nonvolatile semiconductor memory device includes a gate insulating film formed on a semiconductor substrate, a first gate electrode corresponding to a memory... |
| US-8,017,989 |
Nonvolatile semiconductor memory device and method of manufacturing the
same A nonvolatile semiconductor memory device including a semiconductor substrate having a semiconductor layer and an insulating material provided on a surface... |
| US-8,017,988 |
High density stepped, non-planar flash memory A first plurality of memory cells is in a first plane in a first column of the array. A second plurality of memory cells is in a second plane in the same... |
| US-8,017,987 |
Semiconductor memory device and method for manufacturing the same According to an aspect of the present invention, there is provided a semiconductor memory device including: a semiconductor substrate having: first device... |
| US-8,017,986 |
Semiconductor device A semiconductor device includes a plurality of nonvolatile memory cells (1). Each of the nonvolatile memory cells comprises a MOS type first transistor section... |
| US-8,017,985 |
Concentric or nested container capacitor structure for integrated circuits Disclosed are embodiments for a container capacitor structure in which at least two container capacitors, e.g., an inner and outer container capacitor, are made... |
| US-8,017,984 |
Solid-state imaging device A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion... |
| US-8,017,983 |
Solid-state imaging device In each photosensitive cell, a photodiode 101, a transfer gate 102, a floating diffusion layer section 103, an amplifier transistor 104, and a reset transistor... |
| US-8,017,982 |
Imagers with contact plugs extending through the substrates thereof and
imager fabrication methods Methods for fabricating photoimagers, such as complementary metal-oxide-semiconductor (CMOS) imagers, include fabricating image sensing elements, transistors,... |
| US-8,017,981 |
Normally-off integrated JFET power switches in wide bandgap semiconductors
and methods of making Wide bandgap semiconductor devices including normally-off VJFET integrated power switches are described. The power switches can be implemented monolithically or... |
| US-8,017,980 |
Liquid crystal display apparatus An illumination apparatus includes a plurality of light emitting diode devices mounted therein and the light emitting diode device includes a substrate, a light... |
| US-8,017,979 |
Semiconductor device and method for manufacturing the same It is made possible to restrict strain relaxation even if a strained semiconductor element is formed on a very small minute layer. A semiconductor device... |
| US-8,017,978 |
Hybrid semiconductor device A hybrid device including a silicon based MOSFET operatively connected with a GaN based device. |
| US-8,017,977 |
Field effect transistor having recessed gate in compositional graded layer A GaN heterojunction FET has an Al.sub.xGa.sub.1-xN first graded layer and an Al.sub.yGa.sub.1-yN second graded layer, which are formed sequentially on a... |
| US-8,017,976 |
Barrier for doped molybdenum targets A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support... |
| US-8,017,975 |
Semiconductor device A semiconductor device and manufacturing method satisfies both of the trade-off characteristic advantages of the HBT and the HFET. The semiconductor device is... |
| US-8,017,974 |
Semiconductor device with increased withstand voltage A semiconductor device having the present high withstand voltage power device IGBT has at a back surface a p collector layer with boron injected in an amount of... |
| US-8,017,973 |
Nitride semiconductor light-emitting device including a buffer layer on a
substrate and method for... There are provided a nitride semiconductor light-emitting device and a method for manufacturing the same. The nitride semiconductor light-emitting device... |
| US-8,017,972 |
Multilayered white light emitting diode using quantum dots and method of
fabricating the same A multilayered white light emitting diode and a method of fabricating the same include forming a phosphor mixture layer including a green phosphor and a blue... |
| US-8,017,971 |
Light emitting diode light source An LED light source includes an LED die and a transparent encapsulation. The LED die includes a die emitting surface. The transparent encapsulation includes a... |
| US-8,017,970 |
Semiconductor light-emitting element A semiconductor light-emitting element includes, a first semiconductor layer, a second semiconductor layer, a light-emitting layer provided between the first... |
| US-8,017,969 |
LED chip package structure with high-efficiency light emission by rough
surfaces and method of making the same An LED chip package structure with high-efficiency light emission by rough surfaces includes a substrate unit, a light-emitting unit, and a package colloid... |
| US-8,017,968 |
Light-emitting diode chip package body and method for manufacturing same A light-emitting diode chip package body with an excellent heat dissipation performance and a low manufacturing cost, and a packaging method of the same are... |
| US-8,017,967 |
Light-emitting element including a fusion-bonding portion on contact
electrodes A solid-state device having: a flip-chip mounted solid-state element; a power receiving/feeding portion having a mounting substrate to allow that a mounting... |
| US-8,017,966 |
Light-emitting module of vehicular lamp A light-emitting module includes a semiconductor light-emitting element with a generally oblong shape, and a planar electrode formed on a surface of the... |
| US-8,017,965 |
Semiconductor light emitting device A semiconductor light emitting device is provided. The semiconductor light emitting device includes a first conductive semiconductor layer; an active layer on... |
| US-8,017,964 |
Light emitting device A light emitting device includes a light emitting element having at least two electrodes disposed at the side of the light output surface thereof; and a base... |
| US-8,017,963 |
Light emitting diode with a dielectric mirror having a lateral
configuration A light emitting diode is disclosed that includes an active structure, a first ohmic contact on the active structure, and a transparent conductive oxide layer... |
| US-8,017,962 |
Light-emitting diode apparatus and manufacturing method thereof A light-emitting diode (LED) apparatus includes a thermoconductive substrate, a thermoconductive adhesive layer, an epitaxial layer, a current spreading layer... |
| US-8,017,961 |
Light emitting device and phosphor of alkaline earth sulfide therefor The present invention relates to a light emitting device comprising a light emitting diode for emitting blue light or ultraviolet rays, and at least one... |
| US-8,017,960 |
Infrared emitting diode and method of its manufacture An infrared emitting diode that can be utilized as a high power and rapidly responsive infrared light source for both infrared and remote control communications... |
| US-8,017,959 |
Light source and liquid crystal display device using the same A widely applicable and low cost module substrate with a high accuracy, reliability and heat-radiation structure. A light source includes: a heat radiation... |
| US-8,017,958 |
P-contact layer for a III-P semiconductor light emitting device A device includes a semiconductor structure with at least one III-P light emitting layer disposed between an n-type region and a p-type region. The ... |
| US-8,017,957 |
Semiconductor laser apparatus A sub-substrate, a blue-violet semiconductor laser device, an insulating layer, and a red semiconductor laser device are stacked in order on a support member... |
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