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| Patent # | Description |
|---|---|
| US-8,049,278 |
ESD protection for high voltage applications An ESD device includes a low doped well connected to a first contact and a diffusion area connected to a second contact. A substrate between the low doped well... |
| US-8,049,277 |
Epitaxy silicon on insulator (ESOI) Methods and structures for semiconductor devices with STI regions in SOI substrates is provided. A semiconductor structure comprises an SOI epitaxy island... |
| US-8,049,276 |
Reduced process sensitivity of electrode-semiconductor rectifiers Disclosed are semiconductor devices and methods of making semiconductor devices. An exemplary embodiment comprises a semiconductor layer of a first conductivity... |
| US-8,049,275 |
Semiconductor device There is provided a thin film transistor having improved reliability. A gate electrode includes a first gate electrode having a taper portion and a second gate... |
| US-8,049,274 |
Semiconductor integrated circuit and method of manufacturing the same A semiconductor integrated circuit includes a semiconductor substrate, a plurality of trenches formed to extend in one direction in the semiconductor substrate,... |
| US-8,049,273 |
Semiconductor device for improving the peak induced voltage in switching
converter A power semiconductor device includes a backside metal layer, a substrate formed on the backside metal layer, a semiconductor layer formed on the substrate, and... |
| US-8,049,272 |
Transistors having implanted channel layers and methods of fabricating the
same A MESFET includes a silicon carbide layer, spaced apart source and drain regions in the silicon carbide layer, a channel region positioned within the silicon... |
| US-8,049,271 |
Power semiconductor device having a voltage sustaining layer with a
terraced trench formation of floating islands A method is provided for forming a power semiconductor device. The method begins by providing a substrate of a second conductivity type and then forming a... |
| US-8,049,270 |
Semiconductor device This semiconductor device an epitaxial layer of a first conductivity type formed on a surface of the first semiconductor layer, and a base layer of a second... |
| US-8,049,269 |
Non-volatile memory device and method of manufacturing the same In a non-volatile memory device, active fin structures extending in a first direction may be formed on a substrate. A tunnel insulating layer may be formed on... |
| US-8,049,268 |
Dielectric structure in nonvolatile memory device and method for
fabricating the same A dielectric structure in a nonvolatile memory device and a method for fabricating the same are provided. The dielectric structure includes: a first oxide... |
| US-8,049,267 |
Semiconductor device and method of manufacturing the same A semiconductor device includes a semiconductor substrate, a gate insulating film formed on the substrate, a first gate electrode formed on the gate insulating... |
| US-8,049,266 |
Nonvolatile semiconductor memory device and manufacturing method thereof A nonvolatile semiconductor memory device is provided in such a manner that a semiconductor layer is formed over a substrate, a charge accumulating layer is... |
| US-8,049,265 |
Semiconductor device and method of fabricating the same Provided are semiconductor devices and methods of fabricating the same. The semiconductor device comprises: a floating gate pattern formed in a cell area of a... |
| US-8,049,264 |
Method for producing a dielectric material on a semiconductor device and
semiconductor device Method for producing a dielectric material on a semiconductor device and semiconductor device Method for producing a dielectric material on semiconductor device... |
| US-8,049,263 |
Semiconductor device including metal-insulator-metal capacitor and method
of manufacturing same A capacitor has an MIM (Metal Insulator Metal) structure comprising a lower electrode formed in the interior of an electrode trench which is formed in an... |
| US-8,049,262 |
Semiconductor device with increased channel length and method for
fabricating the same A semiconductor device includes a trench formed in a predetermined portion of a substrate and a first recess region beneath the trench. A field oxide layer is... |
| US-8,049,261 |
Semiconductor structure and method of manufacture In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a capacitor embedded in a... |
| US-8,049,260 |
High-density integrated circuitry for semiconductor memory Processes are disclosed which facilitate improved high-density memory circuitry, most preferably dynamic random access memory (DRAM) circuitry. A semiconductor... |
| US-8,049,259 |
Semiconductor device including memory cell having charge accumulation
layer A semiconductor device includes MOS transistors, capacitor elements, a voltage generating circuit, a contact plug, and a memory cell. The MOS transistor and the... |
| US-8,049,258 |
Disposable pillars for contact formation Sacrificial plugs for forming contacts in integrated circuits, as well as methods of forming connections in integrated circuit arrays are disclosed. Various... |
| US-8,049,257 |
CMOS image sensor Provided are a CMOS image sensor in which microlenses are formed in a remaining space in a patterned light shielding layer to improve image sensor... |
| US-8,049,256 |
Active pixel sensor having a sensor wafer connected to a support circuit
wafer A vertically-integrated active pixel sensor includes a sensor wafer connected to a support circuit wafer. Inter-wafer connectors or connector wires transfer... |
| US-8,049,255 |
Display device and method of manufacturing the same A semiconductor device includes an insulating substrate and a TFT element disposed on the substrate. The TFT element includes a gate electrode, a gate... |
| US-8,049,254 |
Semiconductor device with gate-undercutting recessed region A semiconductor device comprises a gate structure on a semiconductor substrate and a recessed region in the semiconductor substrate. The recessed region has a... |
| US-8,049,253 |
Semiconductor device and method for manufacturing the same A semiconductor device and a method for manufacturing a semiconductor device are provided. A semiconductor device comprises a first single-crystal semiconductor... |
| US-8,049,252 |
Methods of fabricating transistors including dielectrically-supported gate
electrodes and related devices Transistors are fabricated by forming a protective layer having a first opening extending therethrough on a substrate, forming a dielectric layer on the... |
| US-8,049,251 |
Semiconductor device and method for manufacturing the same In a semiconductor film having a heterojunction structure, for example a semiconductor film (11) including a SiGe layer (2) and a Si layer (3) formed on the... |
| US-8,049,250 |
Circuit and method for power clamp triggered dual SCR ESD protection Circuit and method for RC power clamp triggered dual SCR ESD protection. In an integrated circuit, a protected pad is coupled to an upper SCR circuit and a... |
| US-8,049,249 |
Integrated circuit devices with ESD protection in scribe line, and methods
for fabricating same A semiconductor wafer with an electrostatic discharge (ESD) protective device is disclosed. The semiconductor wafer includes first and second adjacent... |
| US-8,049,248 |
Semiconductor device including thyristor and method of manufacturing the
same A semiconductor device includes a thyristor in which a first-conductivity-type first region, a second-conductivity-type second region having a conductivity type... |
| US-8,049,247 |
Asymmetric bidirectional silicon-controlled rectifier The present invention discloses an asymmetric bidirectional silicon-controlled rectifier, which comprises: a second conduction type substrate; a first... |
| US-8,049,245 |
Organic light emitting apparatus and method of manufacturing the same This organic light emitting apparatus includes: a filling material between a diode substrate on which an organic light emitting unit is formed and an... |
| US-8,049,244 |
Package substrate and light emitting device using the same A package substrate of the present invention at least comprises a metal substrate and a plurality of light emitting dies. The metal substrate is provided... |
| US-8,049,243 |
Gallium nitride-based compound semiconductor light emitting device This gallium nitride-based compound semiconductor light emitting device includes an n-type semiconductor layer, a light emitting layer, and a p-type... |
| US-8,049,242 |
Optoelectronic device An optoelectronic device such as a light-emitting diode chip is disclosed. It includes a substrate, a multi-layer epitaxial structure, a first metal electrode... |
| US-8,049,241 |
Light emitting device fabrication method thereof, and light emitting
apparatus A light emitting device is provided. The light emitting device comprises a conductive substrate, a reflection layer, a support layer, an ohmic contact layer,... |
| US-8,049,240 |
Dual emission organic light emitting display device and method of driving
the same A dual emission organic light emitting display device and method of driving the same. The display device includes a pixel driver and an organic light emitting... |
| US-8,049,239 |
Light emitting device and method of manufacturing the same Provided are a light emitting device and a method of manufacturing the same. A light emitting device includes an active layer; a first conductive semiconductor... |
| US-8,049,238 |
Light emitting module having light guide plate A light emitting module includes a light source, a light guide plate, and a reflecting mask. The light source includes a circuit board and a light emitting... |
| US-8,049,237 |
Light emitting device A light emitting device includes a substrate provided with a conductor wiring, a light emitting element mounted on the substrate and a light reflecting resin... |
| US-8,049,236 |
Non-global solder mask LED assembly A substrate for an LED assembly can have a plurality of cups formed therein. At least one cup can be formed within another cup. The cups can be co-axial with... |
| US-8,049,235 |
Nitride semiconductor light emitting element with bragg reflection layers
and anti-reflection layers to improve... Provided is a nitride semiconductor light emitting element that has improved light extraction efficiency and a wide irradiation angle of outgoing light... |
| US-8,049,234 |
Light emitting devices with improved light extraction efficiency Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers... |
| US-8,049,233 |
Light-emitting device A light-emitting device of the present invention includes: a semiconductor layer 1 including a light-emitting layer 12; a recess/projection portion 14 including... |
| US-8,049,232 |
Organic EL element having a plurality of light emitting layers To provide an organic EL element in which the hue of display light can be restrained from varying according to a change of the viewing angle. The organic EL... |
| US-8,049,231 |
Quantum photonic imagers and methods of fabrication thereof Emissive quantum photonic imagers comprised of a spatial array of digitally addressable multicolor pixels. Each pixel is a vertical stack of multiple... |
| US-8,049,230 |
Apparatus and system for miniature surface mount devices In one embodiment, a surface-mount device comprises a casing having opposed, first and second main surfaces, side surfaces, and end surfaces. A lead frame... |
| US-8,049,229 |
Light emitting diode and method for manufacturing the same A light emitting diode includes a current leakage passage electrically connected in parallel to an active layer to better protect the light emitting diode from... |
| US-8,049,227 |
Group III nitride semiconductor light emitting device, method for
producing the same, and lamp thereof A group III nitride semiconductor light emitting device with a double sided electrode structure which has a low driving voltage as well as excellent light... |
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