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Patent # Description
US-8,049,278 ESD protection for high voltage applications
An ESD device includes a low doped well connected to a first contact and a diffusion area connected to a second contact. A substrate between the low doped well...
US-8,049,277 Epitaxy silicon on insulator (ESOI)
Methods and structures for semiconductor devices with STI regions in SOI substrates is provided. A semiconductor structure comprises an SOI epitaxy island...
US-8,049,276 Reduced process sensitivity of electrode-semiconductor rectifiers
Disclosed are semiconductor devices and methods of making semiconductor devices. An exemplary embodiment comprises a semiconductor layer of a first conductivity...
US-8,049,275 Semiconductor device
There is provided a thin film transistor having improved reliability. A gate electrode includes a first gate electrode having a taper portion and a second gate...
US-8,049,274 Semiconductor integrated circuit and method of manufacturing the same
A semiconductor integrated circuit includes a semiconductor substrate, a plurality of trenches formed to extend in one direction in the semiconductor substrate,...
US-8,049,273 Semiconductor device for improving the peak induced voltage in switching converter
A power semiconductor device includes a backside metal layer, a substrate formed on the backside metal layer, a semiconductor layer formed on the substrate, and...
US-8,049,272 Transistors having implanted channel layers and methods of fabricating the same
A MESFET includes a silicon carbide layer, spaced apart source and drain regions in the silicon carbide layer, a channel region positioned within the silicon...
US-8,049,271 Power semiconductor device having a voltage sustaining layer with a terraced trench formation of floating islands
A method is provided for forming a power semiconductor device. The method begins by providing a substrate of a second conductivity type and then forming a...
US-8,049,270 Semiconductor device
This semiconductor device an epitaxial layer of a first conductivity type formed on a surface of the first semiconductor layer, and a base layer of a second...
US-8,049,269 Non-volatile memory device and method of manufacturing the same
In a non-volatile memory device, active fin structures extending in a first direction may be formed on a substrate. A tunnel insulating layer may be formed on...
US-8,049,268 Dielectric structure in nonvolatile memory device and method for fabricating the same
A dielectric structure in a nonvolatile memory device and a method for fabricating the same are provided. The dielectric structure includes: a first oxide...
US-8,049,267 Semiconductor device and method of manufacturing the same
A semiconductor device includes a semiconductor substrate, a gate insulating film formed on the substrate, a first gate electrode formed on the gate insulating...
US-8,049,266 Nonvolatile semiconductor memory device and manufacturing method thereof
A nonvolatile semiconductor memory device is provided in such a manner that a semiconductor layer is formed over a substrate, a charge accumulating layer is...
US-8,049,265 Semiconductor device and method of fabricating the same
Provided are semiconductor devices and methods of fabricating the same. The semiconductor device comprises: a floating gate pattern formed in a cell area of a...
US-8,049,264 Method for producing a dielectric material on a semiconductor device and semiconductor device
Method for producing a dielectric material on a semiconductor device and semiconductor device Method for producing a dielectric material on semiconductor device...
US-8,049,263 Semiconductor device including metal-insulator-metal capacitor and method of manufacturing same
A capacitor has an MIM (Metal Insulator Metal) structure comprising a lower electrode formed in the interior of an electrode trench which is formed in an...
US-8,049,262 Semiconductor device with increased channel length and method for fabricating the same
A semiconductor device includes a trench formed in a predetermined portion of a substrate and a first recess region beneath the trench. A field oxide layer is...
US-8,049,261 Semiconductor structure and method of manufacture
In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a capacitor embedded in a...
US-8,049,260 High-density integrated circuitry for semiconductor memory
Processes are disclosed which facilitate improved high-density memory circuitry, most preferably dynamic random access memory (DRAM) circuitry. A semiconductor...
US-8,049,259 Semiconductor device including memory cell having charge accumulation layer
A semiconductor device includes MOS transistors, capacitor elements, a voltage generating circuit, a contact plug, and a memory cell. The MOS transistor and the...
US-8,049,258 Disposable pillars for contact formation
Sacrificial plugs for forming contacts in integrated circuits, as well as methods of forming connections in integrated circuit arrays are disclosed. Various...
US-8,049,257 CMOS image sensor
Provided are a CMOS image sensor in which microlenses are formed in a remaining space in a patterned light shielding layer to improve image sensor...
US-8,049,256 Active pixel sensor having a sensor wafer connected to a support circuit wafer
A vertically-integrated active pixel sensor includes a sensor wafer connected to a support circuit wafer. Inter-wafer connectors or connector wires transfer...
US-8,049,255 Display device and method of manufacturing the same
A semiconductor device includes an insulating substrate and a TFT element disposed on the substrate. The TFT element includes a gate electrode, a gate...
US-8,049,254 Semiconductor device with gate-undercutting recessed region
A semiconductor device comprises a gate structure on a semiconductor substrate and a recessed region in the semiconductor substrate. The recessed region has a...
US-8,049,253 Semiconductor device and method for manufacturing the same
A semiconductor device and a method for manufacturing a semiconductor device are provided. A semiconductor device comprises a first single-crystal semiconductor...
US-8,049,252 Methods of fabricating transistors including dielectrically-supported gate electrodes and related devices
Transistors are fabricated by forming a protective layer having a first opening extending therethrough on a substrate, forming a dielectric layer on the...
US-8,049,251 Semiconductor device and method for manufacturing the same
In a semiconductor film having a heterojunction structure, for example a semiconductor film (11) including a SiGe layer (2) and a Si layer (3) formed on the...
US-8,049,250 Circuit and method for power clamp triggered dual SCR ESD protection
Circuit and method for RC power clamp triggered dual SCR ESD protection. In an integrated circuit, a protected pad is coupled to an upper SCR circuit and a...
US-8,049,249 Integrated circuit devices with ESD protection in scribe line, and methods for fabricating same
A semiconductor wafer with an electrostatic discharge (ESD) protective device is disclosed. The semiconductor wafer includes first and second adjacent...
US-8,049,248 Semiconductor device including thyristor and method of manufacturing the same
A semiconductor device includes a thyristor in which a first-conductivity-type first region, a second-conductivity-type second region having a conductivity type...
US-8,049,247 Asymmetric bidirectional silicon-controlled rectifier
The present invention discloses an asymmetric bidirectional silicon-controlled rectifier, which comprises: a second conduction type substrate; a first...
US-8,049,245 Organic light emitting apparatus and method of manufacturing the same
This organic light emitting apparatus includes: a filling material between a diode substrate on which an organic light emitting unit is formed and an...
US-8,049,244 Package substrate and light emitting device using the same
A package substrate of the present invention at least comprises a metal substrate and a plurality of light emitting dies. The metal substrate is provided...
US-8,049,243 Gallium nitride-based compound semiconductor light emitting device
This gallium nitride-based compound semiconductor light emitting device includes an n-type semiconductor layer, a light emitting layer, and a p-type...
US-8,049,242 Optoelectronic device
An optoelectronic device such as a light-emitting diode chip is disclosed. It includes a substrate, a multi-layer epitaxial structure, a first metal electrode...
US-8,049,241 Light emitting device fabrication method thereof, and light emitting apparatus
A light emitting device is provided. The light emitting device comprises a conductive substrate, a reflection layer, a support layer, an ohmic contact layer,...
US-8,049,240 Dual emission organic light emitting display device and method of driving the same
A dual emission organic light emitting display device and method of driving the same. The display device includes a pixel driver and an organic light emitting...
US-8,049,239 Light emitting device and method of manufacturing the same
Provided are a light emitting device and a method of manufacturing the same. A light emitting device includes an active layer; a first conductive semiconductor...
US-8,049,238 Light emitting module having light guide plate
A light emitting module includes a light source, a light guide plate, and a reflecting mask. The light source includes a circuit board and a light emitting...
US-8,049,237 Light emitting device
A light emitting device includes a substrate provided with a conductor wiring, a light emitting element mounted on the substrate and a light reflecting resin...
US-8,049,236 Non-global solder mask LED assembly
A substrate for an LED assembly can have a plurality of cups formed therein. At least one cup can be formed within another cup. The cups can be co-axial with...
US-8,049,235 Nitride semiconductor light emitting element with bragg reflection layers and anti-reflection layers to improve...
Provided is a nitride semiconductor light emitting element that has improved light extraction efficiency and a wide irradiation angle of outgoing light...
US-8,049,234 Light emitting devices with improved light extraction efficiency
Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers...
US-8,049,233 Light-emitting device
A light-emitting device of the present invention includes: a semiconductor layer 1 including a light-emitting layer 12; a recess/projection portion 14 including...
US-8,049,232 Organic EL element having a plurality of light emitting layers
To provide an organic EL element in which the hue of display light can be restrained from varying according to a change of the viewing angle. The organic EL...
US-8,049,231 Quantum photonic imagers and methods of fabrication thereof
Emissive quantum photonic imagers comprised of a spatial array of digitally addressable multicolor pixels. Each pixel is a vertical stack of multiple...
US-8,049,230 Apparatus and system for miniature surface mount devices
In one embodiment, a surface-mount device comprises a casing having opposed, first and second main surfaces, side surfaces, and end surfaces. A lead frame...
US-8,049,229 Light emitting diode and method for manufacturing the same
A light emitting diode includes a current leakage passage electrically connected in parallel to an active layer to better protect the light emitting diode from...
US-8,049,227 Group III nitride semiconductor light emitting device, method for producing the same, and lamp thereof
A group III nitride semiconductor light emitting device with a double sided electrode structure which has a low driving voltage as well as excellent light...
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