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Patent # Description
US-8,048,825 Haloalkylsulfonanilide derivatives or salt thereof, herbicide comprising the derivatives as active ingredient,...
A haloalkylsulfonanilide derivative represented by general formula (I) or a salt thereof wherein R.sup.1 represents a halo(C.sub.1-C.sub.8)alkyl group, R.sup.2,...
US-8,048,824 Systems and methods for printing borderless images on printable media
A system of printing borderless images on printable media includes at least one sheet of printable media including an imaging surface and a non-imaging surface....
US-8,048,823 Metallic foil for producing honeycomb bodies, honeycomb body produced therefrom and method of producing a...
A foil for producing a metal honeycomb or catalyst carrier body, has an average surface roughness of more than 0.3 .mu.m (micrometers) on both surfaces in at...
US-8,048,822 Method for making silicon-containing products
A method for producing carbon-silica products from silica-containing plant matter such as rice hulls or straw by leaching with sulfuric acid to remove...
US-8,048,821 Catalyst composition for the synthesis of thin multi-walled carbon nanotube and its manufacturing method
The present invention relates to a catalyst composition for the synthesis of thin multi-walled carbon nanotube (MWCNT) and a method for manufacturing a catalyst...
US-8,048,820 Shaped catalyst body for partial oxidation reactions
The invention relates to a shaped catalyst body for preparing maleic anhydride, which comprises mixed oxides of vanadium and of phosphorus as catalyst...
US-8,048,819 Cure catalyst, composition, electronic device and associated method
A cure catalyst is provided. The cure catalyst may include a Lewis acid and one or both of a nitrogen-containing molecule or a non-tertiary phosphine. The...
US-8,048,818 In-situ regeneration of a catalyst masked by calcium sulfate
An in-situ method for regenerating a deactivated catalyst removes a calcium sulfate layer masking active catalyst sites. A reducing agent converts the calcium...
US-8,048,817 Amorphous silica powder, process for its production, and sealing material for semiconductors
To provide an amorphous silica powder suitable for a sealing material for semiconductors having improved HTSL properties and HTOL properties, and a process for...
US-8,048,816 Colored machinable glass-ceramics
The invention relates to opaque, colored glass-ceramic articles and to the production of opaque, colored glass-ceramic articles which can be readily formed to a...
US-8,048,815 Composite article and method of manufacture
The present invention relates to a composite article and to a process for manufacturing the composite article. The composite article comprises multiple layers...
US-8,048,814 Methods and apparatus for aligning a set of patterns on a silicon substrate
A method of aligning a set of patterns on a substrate, the substrate including a substrate surface, is disclosed. The method includes depositing a set of...
US-8,048,813 Method of reducing delamination in the fabrication of small-pitch devices
A method of forming an integrated circuit structure includes providing a substrate; forming a first hard mask layer over the substrate; forming a second hard...
US-8,048,812 Pitch reduced patterns relative to photolithography features
Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns....
US-8,048,811 Method for patterning a metallization layer by reducing resist strip induced damage of the dielectric material
By forming a hardmask layer in combination with one or more cap layers, undue exposure of a sensitive dielectric material to resist stripping etch ambients may...
US-8,048,810 Method for metal gate N/P patterning
A method for fabricating a integrated circuit is disclosed. An exemplary method includes providing a substrate; forming a hard mask layer over the substrate;...
US-8,048,809 Polishing method using chemical mechanical slurry composition
A slurry composition includes about 4.25 to about 18.5 weight percent of an abrasive, about 80 to about 95 weight percent of deionized water, and about 0.05 to...
US-8,048,808 Slurry compositions for polishing metal, methods of polishing a metal object and methods of forming a metal...
A slurry composition for polishing metal includes a polymeric polishing accelerating agent, the polymeric polishing accelerating agent including a backbone of...
US-8,048,807 Method and apparatus for thinning a substrate
Provided is a method for fabricating a semiconductor device that includes providing a semiconductor substrate having a front side and a backside, where active...
US-8,048,806 Methods to avoid unstable plasma states during a process transition
In some implementations, a method is provided in a plasma processing chamber for stabilizing etch-rate distributions during a process transition from one...
US-8,048,805 Methods for growing low-resistivity tungsten film
Improved methods for depositing low resistivity tungsten films are provided. The methods involve depositing a tungsten nucleation layer on a substrate and then...
US-8,048,804 Method of manufacturing semiconductor package
A method of manufacturing a semiconductor package, including at least a step A that forms a first transforming portion by irradiating a laser beam on at least a...
US-8,048,803 Method for forming contact plug in a semiconductor device
A method for forming a contact plug in a semiconductor device includes providing a substrate having an insulation layer. A hard mask pattern is formed over the...
US-8,048,802 Method for forming interlayer insulating film in semiconductor device
A method for forming an interlayer insulating film includes providing a semiconductor substrate having a first substrate region with a plurality of metal wiring...
US-8,048,801 Substrate with feedthrough and method for producing the same
A substrate with first and second main surfaces includes at least one channel extending from the first main surface to the second main surface. The at least one...
US-8,048,800 Fabrication method of two-terminal semiconductor component using trench technology
A method of fabricating a two-terminal semiconductor component using a trench technique is disclosed that includes forming a trench by etching an etching...
US-8,048,799 Method for forming copper wiring in semiconductor device
A method for forming copper wirings in a semiconductor device may include depositing a lower insulating film over a semiconductor substrate; forming vias in the...
US-8,048,798 Method for manufacturing a nonvolatile semiconductor storage device where memory cells are arranged three...
A method for manufacturing a nonvolatile semiconductor storage device, including: forming a first conductive layer so that it is sandwiched in an up-down...
US-8,048,797 Multilayer low reflectivity hard mask and process therefor
A method utilizing a multilayer anti-reflective coating layer structure can achieve low reflectivity at high numerical apertures. The multilayer anti-reflective...
US-8,048,796 Microstructure device including a metallization structure with self-aligned air gaps formed based on a...
In a sophisticated metallization system of a semiconductor device, air gaps may be formed in a self-aligned manner on the basis of a sacrificial material, such...
US-8,048,795 Self-assembly pattern for semiconductor integrated circuit
A method of fabricating a semiconductor device is provided which includes providing a substrate. A material layer is formed over the substrate. A polymer layer...
US-8,048,794 3D silicon-silicon die stack structure and method for fine pitch interconnection and vertical heat transport
A method of fabricating a thin wafer die includes creating circuits and front-end-of-line wiring on a silicon wafer, drilling holes in a topside of the wafer,...
US-8,048,793 Flip chip for electrical function test and manufacturing method thereof
Disclosed is a method for manufacturing a flip chip, in which a gold typically used in a flip chip manufacturing is adhered by conductive adhesives, wherein the...
US-8,048,792 Superior fill conditions in a replacement gate approach by corner rounding prior to completely removing a...
In a replacement gate approach, a superior cross-sectional shape of the gate opening may be achieved by performing a material erosion process in an intermediate...
US-8,048,791 Method of forming a semiconductor device
Methods for forming a semiconductor device comprising a semiconductor substrate are provided. In accordance with an exemplary embodiment, a method comprises...
US-8,048,790 Method for self-aligning a stop layer to a replacement gate for self-aligned contact integration
Semiconductor devices with replacement gate electrodes and integrated self aligned contacts are formed with enhanced gate dielectric layers and improved...
US-8,048,789 Mesoscale pyramids, arrays and methods of preparation
Ordered, two-dimensional arrays of pyramidal particulates and related methods of preparation.
US-8,048,788 Method for treating non-planar structures using gas cluster ion beam processing
A method for treating a structure is described. One embodiment includes forming a structure on a substrate, wherein the structure has a plurality of surfaces...
US-8,048,787 Methods of forming semiconductor devices
Provided are a semiconductor device and a method of forming the same. The method may include forming a gate dielectric layer including a plurality of elements...
US-8,048,786 Method for fabricating single-crystalline substrate containing gallium nitride
The present invention provides a method for fabricating a single-crystalline substrate containing gallium nitride (GaN) comprising the following steps. First,...
US-8,048,785 Method of fabricating nanosized filamentary carbon devices over a relatively large-area
Nanosized filamentary carbon structures (CNTs) nucleating over a catalyzed surface may be grown in an up-right direction reaching a second surface, spaced from...
US-8,048,784 Methods of manufacturing semiconductor devices including a doped silicon layer
Methods for manufacturing a semiconductor device include forming a seed layer containing a silicon material on a substrate. An amorphous silicon layer...
US-8,048,783 Method of forming polycrystalline silicon layer and atomic layer deposition apparatus used for the same
A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon...
US-8,048,782 Plasma deposition of amorphous semiconductors at microwave frequencies
Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows or other...
US-8,048,781 Methods and systems for packaging integrated circuits
Methods of packaging integrated circuits are described. One method relates to attaching a singulated device wafer to a substrate. The singulated device wafer...
US-8,048,780 Method of processing optical device wafer
A method of dividing an optical device wafer includes: a laser beam processing step of performing laser beam processing on the face side of an optical device...
US-8,048,778 Methods of dicing a semiconductor structure
An embodiment of the disclosure includes a method of dicing a semiconductor structure. A device layer on a semiconductor substrate is provided. The device layer...
US-8,048,777 Method for manufacturing semiconductor device
An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled...
US-8,048,776 Semiconductor device and method of supporting a wafer during backgrinding and reflow of solder bumps
A semiconductor device is made by providing a semiconductor wafer having an active surface, forming an under bump metallization layer on the active surface of...
US-8,048,775 Process of forming ultra thin wafers having an edge support ring
A process of forming ultra thin wafers having an edge support ring is disclosed. The process provides an edge support ring having an angled inner wall...
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