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Patent # Description
US-8,067,334 Selective hydrogenation catalyst
A catalyst on an oxidic support and processes for selectively hydrogenating unsaturated compounds in hydrocarbon streams comprising them using these catalysts...
US-8,067,333 Catalysts
A process for producing a supported cobalt-based Fischer-Tropsch synthesis catalyst includes, in a first activation stage, treating a particulate catalyst...
US-8,067,332 Methanation catalyst, and carbon monoxide removing system, fuel processor, and fuel cell including the same
A methanation catalyst, a carbon monoxide removing system, a fuel processor, and a fuel cell including the same, and more particularly a non-supported...
US-8,067,331 Bulk catalyst comprising nickel tungsten metal oxidic particles
The invention relates to a nickel tungsten bulk catalyst, to a process for the manufacture of said catalyst and to the use of said catalyst for the...
US-8,067,330 Catalytic material and catalyst for purifying exhaust gas component
Disclosed is a catalytic material for purifying an exhaust gas component. The catalytic material comprises a composite oxide which contains, as essential...
US-8,067,329 Boron-based catalysts
Boron based catalysts and processes for preparing the catalysts are provided. The catalysts are suitable for the alkoxylation of alcohols using alkylene epoxides.
US-8,067,328 Polymerisation and oligomerisation catalysts
A polymerization catalyst composition comprising (1) a transition metal compound of Formula (A), Z being 5-membered heterocyclic containing at least one carbon,...
US-8,067,327 Membranes for highly selective separations
The present invention provides modified molecular sieve membranes with improved CO.sub.2/CH.sub.4 separation selectivity and methods for making such membranes....
US-8,067,326 Refractory materials
Refractory materials are provided which contain P.sub.2O.sub.5/R.sub.2O.sub.3 constituents, where R is Y, Sc, Er, Lu, Yb, Tm, Ho, Dy, Tb, Gd, or a combination...
US-8,067,325 Semiconductor ceramic composition
It is intended to provide a semiconductor ceramic composition containing no Pb, which is capable of shifting the Curie temperate to a positive direction as well...
US-8,067,324 Low dielectric loss ceramic ferroelectric composite material
The ceramic ferroelectric composite material ensures the achievement of the technical result, consisting in a decrease in the level of the dielectric losses in...
US-8,067,323 Sintered compact
A sintered cubic boron nitride (cBN) compact for use in a tool is obtained by sintering a mixture of (i) cubic boron nitride, (ii) aluminum oxide, (iii) one or...
US-8,067,322 Glass composition for lamp, glass part for lamp, and process for producing lamp or glass composition for lamp
A glass composition for lamps includes the following by weight percent: SiO.sub.2: 60-75 wt %; CeO.sub.2+Ce.sub.2O.sub.3: 0.01-5.2 wt %; SnO+SnO.sub.2: 0.01-5.2...
US-8,067,321 Sodium-potassium hexametaphosphate and potassium metaphosphate with a low insolubles content
Potassium-containing polyphosphate glasses having a relatively high amount of potassium and a relatively low level of insoluble material (e.g., less than about...
US-8,067,320 Spunbonded nonwoven fabric
There is provided by the present invention a spunbonded nonwoven fabric which is formed from fibers comprising a propylene-based polymer and has MFR of 65 to...
US-8,067,319 Fibers made from copolymers of ethylene/.alpha.-olefins
A fiber is obtainable from or comprises an ethylene/.alpha.-olefin interpolymer characterized by an elastic recovery, Re, in percent at 300 percent strain and 1...
US-8,067,318 Elastic nonwoven sheet
This invention relates to stretchable nonwoven sheets prepared by substantially uniformly impregnating a necked nonwoven substrate or an easily extensible...
US-8,067,317 Stab resistant and anti-ballistic material and method of making the same
The invention relates to a fabric having both stab resistant and anti-ballistic properties. The fabric is made of yarn of a weight greater than about 500 dtex,...
US-8,067,316 Method for manufacturing memory element
A conductive paste including conductive particles each of which has a size of greater than or equal to 0.1 .mu.m and less than or equal to 10 .mu.m, a resin,...
US-8,067,315 Microstructure device including a compressively stressed low-k material layer
A nitrogen-containing silicon carbide material may be deposited on the basis of a single frequency or mixed frequency deposition recipe with a high internal...
US-8,067,314 Gate trim process using either wet etch or dry etch approach to target CD for selected transistors
Disclosed are methods and devices for targeting CD of selected transistors in a semiconductor device. Varying CD is done by forming hard mask lines in a hard...
US-8,067,313 Semiconductor device, method of manufacturing the same, and electronic apparatus
Disclosed is a method of manufacturing a semiconductor device including forming a transistor on a first surface of a device substrate, forming a hole in a...
US-8,067,312 Coaxial through chip connection
An integrated circuit chip includes devices formed by doping of a semiconductor on a substrate and at least one post-device formation through-chip via made up...
US-8,067,311 Mask and method for fabricating semiconductor device using the same
A mask for forming a metal line and a via contact, and a method for fabricating a semiconductor device using the same, minimizes misalignment. The mask includes...
US-8,067,310 Semiconductor device and method for manufacturing of same
A method for manufacturing a semiconductor device, includes: forming a first metal layer on a semiconductor substrate, the semiconductor substrate including a...
US-8,067,309 Semiconductor device using metal nitride as insulating film and its manufacture method
A first insulating film is formed on a semiconductor substrate. A second insulating film made of insulating metal nitride is formed on the first insulating...
US-8,067,308 Semiconductor device and method of forming an interconnect structure with TSV using encapsulant for structural...
A semiconductor device has a conductive via formed through in a first side of the substrate. A first interconnect structure is formed over the first side of the...
US-8,067,307 Integrated circuit package system for stackable devices
An integrated circuit package system comprising: providing a package die; and connecting a connector lead having a first connector end with a protruded...
US-8,067,306 Integrated circuit packaging system with exposed conductor and method of manufacture thereof
A method of manufacture of an integrated circuit packaging system includes: providing a substrate; forming a component connector on the substrate; forming a...
US-8,067,305 Electrically conductive structure on a semiconductor substrate formed from printing
Provided are methods for forming an electrically conductive structure of a desired three-dimensional shape on a substantially planar surface of a substrate,...
US-8,067,304 Method for forming a patterned thick metallization atop a power semiconductor chip
A method is disclosed for forming a patterned thick metallization atop a semiconductor chip wafer. The method includes fabricating a nearly complete...
US-8,067,303 Solid state energy conversion device
A solid state energy conversion device and method of making is disclosed for converting energy between electromagnetic and electrical energy. The solid state...
US-8,067,302 Defect-free junction formation using laser melt annealing of octadecaborane self-amorphizing implants
A method and apparatus for implanting a semiconductor substrate with boron clusters. A substrate is implanted with octadecaborane by plasma immersion or ion...
US-8,067,301 Image sensor and method for forming the same
A reliable image sensor and a method for forming the same are provided. The image sensor includes a photo-detective device. At least one transistor is...
US-8,067,300 Al.sub.xIn.sub.yGa.sub.1-x-yN mixture crystal substrate, method of growing same and method of producing same
Seeds are implanted in a regular pattern upon an undersubstrate. An Al.sub.xIn.sub.yGa.sub.1-x-yN (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, 0<x+y.ltoreq.1)...
US-8,067,299 Nanoelectronic structure and method of producing such
The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume...
US-8,067,298 Relaxation of a strained material layer with application of a stiffener
The invention relates to methods of fabricating a layer of at least partially relaxed material, such as for electronics, optoelectronics or photovoltaics. An...
US-8,067,297 Process for deposition of semiconductor films
Chemical vapor deposition processes utilize higher order silanes and germanium precursors as chemical precursors. The processes have high deposition rates yet...
US-8,067,296 Method of manufacturing semiconductor device
The present invention provides a method of manufacturing a semiconductor device in which a thinned substrate of a semiconductor or semiconductor device is...
US-8,067,295 Manufacturing method of solar cell module, and solar cell and solar cell module
A double-side light receiving solar cell in a planer regular hexagon shape and having first electrodes on both surfaces are divided into four pieces by a line...
US-8,067,294 Method of manufacturing semiconductor device including protective film
It is an object of the invention to provide a lightweight semiconductor device having a highly reliable sealing structure which can prevent ingress of...
US-8,067,293 Power semiconductor device and method of manufacturing the same
A semiconductor device and a method of manufacturing the same. The method includes preparing a semiconductor substrate having high-voltage and low-voltage...
US-8,067,292 Isolation structure, non-volatile memory having the same, and method of fabricating the same
A method of forming an isolation structure, comprising: (a) providing a base having a recess; (b) forming a stop layer on the base and in the recess; (c)...
US-8,067,291 MOS field-effect transistor and manufacturing method thereof
To provide a manufacturing method of a MOS field-effect transistor in which such a structure is adopted that SiGe having a large lattice constant is embedded...
US-8,067,290 Bipolar transistor with base-collector-isolation without dielectric
The disclosed invention provides a method for the fabrication of a bipolar transistor having a collector region comprised within a semiconductor body separated...
US-8,067,289 Semiconductor device and manufacturing method thereof
A semiconductor device and a method of manufacturing a semiconductor device. A semiconductor device may include an epitaxial layer over a semiconductor...
US-8,067,288 Configuration and method of manufacturing the one-time programmable (OTP) memory cells
This invention discloses a method for manufacturing a one-time programmable (OTP) memory includes a first and second MOS transistors connected in parallel and...
US-8,067,287 Asymmetric segmented channel transistors
Structures, layouts and methods of forming integrated circuits are described. In various embodiments, the current invention includes an asymmetric segmented...
US-8,067,286 Methods of forming recessed access devices associated with semiconductor constructions
The invention includes methods of forming recessed access devices. A substrate is provided to have recessed access device trenches therein. A pair of the...
US-8,067,285 Methods of forming a conductive layer structure and methods of manufacturing a recessed channel transistor...
In a method of forming a conductive layer structure and a method of manufacturing a recess channel transistor, a first insulating layer and a first conductive...
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