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| Patent # | Description |
|---|---|
| US-8,067,334 |
Selective hydrogenation catalyst A catalyst on an oxidic support and processes for selectively hydrogenating unsaturated compounds in hydrocarbon streams comprising them using these catalysts... |
| US-8,067,333 |
Catalysts A process for producing a supported cobalt-based Fischer-Tropsch synthesis catalyst includes, in a first activation stage, treating a particulate catalyst... |
| US-8,067,332 |
Methanation catalyst, and carbon monoxide removing system, fuel processor,
and fuel cell including the same A methanation catalyst, a carbon monoxide removing system, a fuel processor, and a fuel cell including the same, and more particularly a non-supported... |
| US-8,067,331 |
Bulk catalyst comprising nickel tungsten metal oxidic particles The invention relates to a nickel tungsten bulk catalyst, to a process for the manufacture of said catalyst and to the use of said catalyst for the... |
| US-8,067,330 |
Catalytic material and catalyst for purifying exhaust gas component Disclosed is a catalytic material for purifying an exhaust gas component. The catalytic material comprises a composite oxide which contains, as essential... |
| US-8,067,329 |
Boron-based catalysts Boron based catalysts and processes for preparing the catalysts are provided. The catalysts are suitable for the alkoxylation of alcohols using alkylene epoxides. |
| US-8,067,328 |
Polymerisation and oligomerisation catalysts A polymerization catalyst composition comprising (1) a transition metal compound of Formula (A), Z being 5-membered heterocyclic containing at least one carbon,... |
| US-8,067,327 |
Membranes for highly selective separations The present invention provides modified molecular sieve membranes with improved CO.sub.2/CH.sub.4 separation selectivity and methods for making such membranes.... |
| US-8,067,326 |
Refractory materials Refractory materials are provided which contain P.sub.2O.sub.5/R.sub.2O.sub.3 constituents, where R is Y, Sc, Er, Lu, Yb, Tm, Ho, Dy, Tb, Gd, or a combination... |
| US-8,067,325 |
Semiconductor ceramic composition It is intended to provide a semiconductor ceramic composition containing no Pb, which is capable of shifting the Curie temperate to a positive direction as well... |
| US-8,067,324 |
Low dielectric loss ceramic ferroelectric composite material The ceramic ferroelectric composite material ensures the achievement of the technical result, consisting in a decrease in the level of the dielectric losses in... |
| US-8,067,323 |
Sintered compact A sintered cubic boron nitride (cBN) compact for use in a tool is obtained by sintering a mixture of (i) cubic boron nitride, (ii) aluminum oxide, (iii) one or... |
| US-8,067,322 |
Glass composition for lamp, glass part for lamp, and process for producing
lamp or glass composition for lamp A glass composition for lamps includes the following by weight percent: SiO.sub.2: 60-75 wt %; CeO.sub.2+Ce.sub.2O.sub.3: 0.01-5.2 wt %; SnO+SnO.sub.2: 0.01-5.2... |
| US-8,067,321 |
Sodium-potassium hexametaphosphate and potassium metaphosphate with a low
insolubles content Potassium-containing polyphosphate glasses having a relatively high amount of potassium and a relatively low level of insoluble material (e.g., less than about... |
| US-8,067,320 |
Spunbonded nonwoven fabric There is provided by the present invention a spunbonded nonwoven fabric which is formed from fibers comprising a propylene-based polymer and has MFR of 65 to... |
| US-8,067,319 |
Fibers made from copolymers of ethylene/.alpha.-olefins A fiber is obtainable from or comprises an ethylene/.alpha.-olefin interpolymer characterized by an elastic recovery, Re, in percent at 300 percent strain and 1... |
| US-8,067,318 |
Elastic nonwoven sheet This invention relates to stretchable nonwoven sheets prepared by substantially uniformly impregnating a necked nonwoven substrate or an easily extensible... |
| US-8,067,317 |
Stab resistant and anti-ballistic material and method of making the same The invention relates to a fabric having both stab resistant and anti-ballistic properties. The fabric is made of yarn of a weight greater than about 500 dtex,... |
| US-8,067,316 |
Method for manufacturing memory element A conductive paste including conductive particles each of which has a size of greater than or equal to 0.1 .mu.m and less than or equal to 10 .mu.m, a resin,... |
| US-8,067,315 |
Microstructure device including a compressively stressed low-k material
layer A nitrogen-containing silicon carbide material may be deposited on the basis of a single frequency or mixed frequency deposition recipe with a high internal... |
| US-8,067,314 |
Gate trim process using either wet etch or dry etch approach to target CD
for selected transistors Disclosed are methods and devices for targeting CD of selected transistors in a semiconductor device. Varying CD is done by forming hard mask lines in a hard... |
| US-8,067,313 |
Semiconductor device, method of manufacturing the same, and electronic
apparatus Disclosed is a method of manufacturing a semiconductor device including forming a transistor on a first surface of a device substrate, forming a hole in a... |
| US-8,067,312 |
Coaxial through chip connection An integrated circuit chip includes devices formed by doping of a semiconductor on a substrate and at least one post-device formation through-chip via made up... |
| US-8,067,311 |
Mask and method for fabricating semiconductor device using the same A mask for forming a metal line and a via contact, and a method for fabricating a semiconductor device using the same, minimizes misalignment. The mask includes... |
| US-8,067,310 |
Semiconductor device and method for manufacturing of same A method for manufacturing a semiconductor device, includes: forming a first metal layer on a semiconductor substrate, the semiconductor substrate including a... |
| US-8,067,309 |
Semiconductor device using metal nitride as insulating film and its
manufacture method A first insulating film is formed on a semiconductor substrate. A second insulating film made of insulating metal nitride is formed on the first insulating... |
| US-8,067,308 |
Semiconductor device and method of forming an interconnect structure with
TSV using encapsulant for structural... A semiconductor device has a conductive via formed through in a first side of the substrate. A first interconnect structure is formed over the first side of the... |
| US-8,067,307 |
Integrated circuit package system for stackable devices An integrated circuit package system comprising: providing a package die; and connecting a connector lead having a first connector end with a protruded... |
| US-8,067,306 |
Integrated circuit packaging system with exposed conductor and method of
manufacture thereof A method of manufacture of an integrated circuit packaging system includes: providing a substrate; forming a component connector on the substrate; forming a... |
| US-8,067,305 |
Electrically conductive structure on a semiconductor substrate formed from
printing Provided are methods for forming an electrically conductive structure of a desired three-dimensional shape on a substantially planar surface of a substrate,... |
| US-8,067,304 |
Method for forming a patterned thick metallization atop a power
semiconductor chip A method is disclosed for forming a patterned thick metallization atop a semiconductor chip wafer. The method includes fabricating a nearly complete... |
| US-8,067,303 |
Solid state energy conversion device A solid state energy conversion device and method of making is disclosed for converting energy between electromagnetic and electrical energy. The solid state... |
| US-8,067,302 |
Defect-free junction formation using laser melt annealing of
octadecaborane self-amorphizing implants A method and apparatus for implanting a semiconductor substrate with boron clusters. A substrate is implanted with octadecaborane by plasma immersion or ion... |
| US-8,067,301 |
Image sensor and method for forming the same A reliable image sensor and a method for forming the same are provided. The image sensor includes a photo-detective device. At least one transistor is... |
| US-8,067,300 |
Al.sub.xIn.sub.yGa.sub.1-x-yN mixture crystal substrate, method of growing
same and method of producing same Seeds are implanted in a regular pattern upon an undersubstrate. An Al.sub.xIn.sub.yGa.sub.1-x-yN (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, 0<x+y.ltoreq.1)... |
| US-8,067,299 |
Nanoelectronic structure and method of producing such The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume... |
| US-8,067,298 |
Relaxation of a strained material layer with application of a stiffener The invention relates to methods of fabricating a layer of at least partially relaxed material, such as for electronics, optoelectronics or photovoltaics. An... |
| US-8,067,297 |
Process for deposition of semiconductor films Chemical vapor deposition processes utilize higher order silanes and germanium precursors as chemical precursors. The processes have high deposition rates yet... |
| US-8,067,296 |
Method of manufacturing semiconductor device The present invention provides a method of manufacturing a semiconductor device in which a thinned substrate of a semiconductor or semiconductor device is... |
| US-8,067,295 |
Manufacturing method of solar cell module, and solar cell and solar cell
module A double-side light receiving solar cell in a planer regular hexagon shape and having first electrodes on both surfaces are divided into four pieces by a line... |
| US-8,067,294 |
Method of manufacturing semiconductor device including protective film It is an object of the invention to provide a lightweight semiconductor device having a highly reliable sealing structure which can prevent ingress of... |
| US-8,067,293 |
Power semiconductor device and method of manufacturing the same A semiconductor device and a method of manufacturing the same. The method includes preparing a semiconductor substrate having high-voltage and low-voltage... |
| US-8,067,292 |
Isolation structure, non-volatile memory having the same, and method of
fabricating the same A method of forming an isolation structure, comprising: (a) providing a base having a recess; (b) forming a stop layer on the base and in the recess; (c)... |
| US-8,067,291 |
MOS field-effect transistor and manufacturing method thereof To provide a manufacturing method of a MOS field-effect transistor in which such a structure is adopted that SiGe having a large lattice constant is embedded... |
| US-8,067,290 |
Bipolar transistor with base-collector-isolation without dielectric The disclosed invention provides a method for the fabrication of a bipolar transistor having a collector region comprised within a semiconductor body separated... |
| US-8,067,289 |
Semiconductor device and manufacturing method thereof A semiconductor device and a method of manufacturing a semiconductor device. A semiconductor device may include an epitaxial layer over a semiconductor... |
| US-8,067,288 |
Configuration and method of manufacturing the one-time programmable (OTP)
memory cells This invention discloses a method for manufacturing a one-time programmable (OTP) memory includes a first and second MOS transistors connected in parallel and... |
| US-8,067,287 |
Asymmetric segmented channel transistors Structures, layouts and methods of forming integrated circuits are described. In various embodiments, the current invention includes an asymmetric segmented... |
| US-8,067,286 |
Methods of forming recessed access devices associated with semiconductor
constructions The invention includes methods of forming recessed access devices. A substrate is provided to have recessed access device trenches therein. A pair of the... |
| US-8,067,285 |
Methods of forming a conductive layer structure and methods of
manufacturing a recessed channel transistor... In a method of forming a conductive layer structure and a method of manufacturing a recess channel transistor, a first insulating layer and a first conductive... |
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